JP5132171B2 - 不揮発性半導体記憶装置及びその作製方法並びに半導体装置及びその作製方法 - Google Patents

不揮発性半導体記憶装置及びその作製方法並びに半導体装置及びその作製方法 Download PDF

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Publication number
JP5132171B2
JP5132171B2 JP2007076018A JP2007076018A JP5132171B2 JP 5132171 B2 JP5132171 B2 JP 5132171B2 JP 2007076018 A JP2007076018 A JP 2007076018A JP 2007076018 A JP2007076018 A JP 2007076018A JP 5132171 B2 JP5132171 B2 JP 5132171B2
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insulating film
conductive layer
gate electrode
floating gate
layer
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JP2007076018A
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Japanese (ja)
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JP2007294915A5 (enExample
JP2007294915A (ja
Inventor
良信 浅見
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007076018A priority Critical patent/JP5132171B2/ja
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Publication of JP2007294915A5 publication Critical patent/JP2007294915A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP2007076018A 2006-03-31 2007-03-23 不揮発性半導体記憶装置及びその作製方法並びに半導体装置及びその作製方法 Expired - Fee Related JP5132171B2 (ja)

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JP2007076018A JP5132171B2 (ja) 2006-03-31 2007-03-23 不揮発性半導体記憶装置及びその作製方法並びに半導体装置及びその作製方法

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JP2006101254 2006-03-31
JP2006101254 2006-03-31
JP2007076018A JP5132171B2 (ja) 2006-03-31 2007-03-23 不揮発性半導体記憶装置及びその作製方法並びに半導体装置及びその作製方法

Related Child Applications (1)

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JP2012223251A Division JP5604492B2 (ja) 2006-03-31 2012-10-05 半導体装置

Publications (3)

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JP2007294915A JP2007294915A (ja) 2007-11-08
JP2007294915A5 JP2007294915A5 (enExample) 2010-04-30
JP5132171B2 true JP5132171B2 (ja) 2013-01-30

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8441009B2 (en) * 2009-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2015043388A (ja) * 2013-08-26 2015-03-05 国立大学法人 琉球大学 半導体装置、半導体装置の製造方法、電子機器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3980178B2 (ja) * 1997-08-29 2007-09-26 株式会社半導体エネルギー研究所 不揮発性メモリおよび半導体装置
JP2001326289A (ja) * 2000-03-08 2001-11-22 Semiconductor Energy Lab Co Ltd 不揮発性メモリおよび半導体装置
US7378286B2 (en) * 2004-08-20 2008-05-27 Sharp Laboratories Of America, Inc. Semiconductive metal oxide thin film ferroelectric memory transistor

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JP2007294915A (ja) 2007-11-08

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