JP2005092963A5 - - Google Patents

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Publication number
JP2005092963A5
JP2005092963A5 JP2003323358A JP2003323358A JP2005092963A5 JP 2005092963 A5 JP2005092963 A5 JP 2005092963A5 JP 2003323358 A JP2003323358 A JP 2003323358A JP 2003323358 A JP2003323358 A JP 2003323358A JP 2005092963 A5 JP2005092963 A5 JP 2005092963A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003323358A
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JP2005092963A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003323358A priority Critical patent/JP2005092963A/ja
Priority claimed from JP2003323358A external-priority patent/JP2005092963A/ja
Priority to KR1020040073800A priority patent/KR100635417B1/ko
Priority to US10/941,102 priority patent/US7149115B2/en
Publication of JP2005092963A publication Critical patent/JP2005092963A/ja
Priority to US11/482,019 priority patent/US7307886B2/en
Publication of JP2005092963A5 publication Critical patent/JP2005092963A5/ja
Priority to US11/979,767 priority patent/US7436712B2/en
Priority to US12/211,380 priority patent/US20090021981A1/en
Priority to US12/483,710 priority patent/US7821829B2/en
Priority to US12/888,974 priority patent/US8000143B2/en
Pending legal-status Critical Current

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JP2003323358A 2003-09-16 2003-09-16 不揮発性記憶装置 Pending JP2005092963A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2003323358A JP2005092963A (ja) 2003-09-16 2003-09-16 不揮発性記憶装置
KR1020040073800A KR100635417B1 (ko) 2003-09-16 2004-09-15 박막 트랜지스터로 구성되는 회로를 포함하는 불휘발성기억 장치
US10/941,102 US7149115B2 (en) 2003-09-16 2004-09-15 Nonvolatile memory device including circuit formed of thin film transistors
US11/482,019 US7307886B2 (en) 2003-09-16 2006-07-07 Nonvolatile memory device including circuit formed of thin film transistors
US11/979,767 US7436712B2 (en) 2003-09-16 2007-11-08 Nonvolatile memory device including circuit formed of thin film transistors
US12/211,380 US20090021981A1 (en) 2003-09-16 2008-09-16 Nonvolatile memory device including circuit formed of thin film transistors
US12/483,710 US7821829B2 (en) 2003-09-16 2009-06-12 Nonvolatile memory device including circuit formed of thin film transistors
US12/888,974 US8000143B2 (en) 2003-09-16 2010-09-23 Nonvolatile memory device including circuit formed of thin film transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003323358A JP2005092963A (ja) 2003-09-16 2003-09-16 不揮発性記憶装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2009098330A Division JP2009158094A (ja) 2009-04-14 2009-04-14 不揮発性記憶装置
JP2009204781A Division JP2009283136A (ja) 2009-09-04 2009-09-04 不揮発性記憶装置

Publications (2)

Publication Number Publication Date
JP2005092963A JP2005092963A (ja) 2005-04-07
JP2005092963A5 true JP2005092963A5 (ja) 2006-09-14

Family

ID=34270026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003323358A Pending JP2005092963A (ja) 2003-09-16 2003-09-16 不揮発性記憶装置

Country Status (3)

Country Link
US (6) US7149115B2 (ja)
JP (1) JP2005092963A (ja)
KR (1) KR100635417B1 (ja)

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US9496015B1 (en) * 2015-08-11 2016-11-15 Macronix International Co., Ltd. Array structure having local decoders in an electronic device
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US9972397B2 (en) * 2016-06-24 2018-05-15 SK Hynix Inc. Semiconductor memory device and operating method thereof
US11004484B2 (en) 2018-06-15 2021-05-11 Samsung Electronics Co., Ltd. Page buffer and memory device including the same
KR102509640B1 (ko) 2018-06-15 2023-03-16 삼성전자주식회사 페이지 버퍼 및 이를 포함하는 메모리 장치
JP6618587B2 (ja) * 2018-08-21 2019-12-11 ルネサスエレクトロニクス株式会社 半導体装置
IT201900001947A1 (it) * 2019-02-11 2020-08-11 Sk Hynix Inc Struttura di decodificatore per una architettura di memoria

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