JP2005079165A - 不揮発性半導体記憶装置とその製造方法、電子カードおよび電子装置 - Google Patents

不揮発性半導体記憶装置とその製造方法、電子カードおよび電子装置 Download PDF

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Publication number
JP2005079165A
JP2005079165A JP2003304777A JP2003304777A JP2005079165A JP 2005079165 A JP2005079165 A JP 2005079165A JP 2003304777 A JP2003304777 A JP 2003304777A JP 2003304777 A JP2003304777 A JP 2003304777A JP 2005079165 A JP2005079165 A JP 2005079165A
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region
element isolation
memory cell
gate
nand
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JP2003304777A
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Japanese (ja)
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JP2005079165A5 (enExample
Inventor
Naoki Kai
直樹 甲斐
Hiroaki Hazama
博顕 間
Hirohisa Iizuka
裕久 飯塚
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Toshiba Corp
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Toshiba Corp
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Priority to JP2003304777A priority Critical patent/JP2005079165A/ja
Priority to US10/926,043 priority patent/US7196370B2/en
Publication of JP2005079165A publication Critical patent/JP2005079165A/ja
Publication of JP2005079165A5 publication Critical patent/JP2005079165A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2003304777A 2003-08-28 2003-08-28 不揮発性半導体記憶装置とその製造方法、電子カードおよび電子装置 Pending JP2005079165A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003304777A JP2005079165A (ja) 2003-08-28 2003-08-28 不揮発性半導体記憶装置とその製造方法、電子カードおよび電子装置
US10/926,043 US7196370B2 (en) 2003-08-28 2004-08-26 Nonvolatile semiconductor memory device having trench-type isolation region, and method of fabricating the same

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Application Number Priority Date Filing Date Title
JP2003304777A JP2005079165A (ja) 2003-08-28 2003-08-28 不揮発性半導体記憶装置とその製造方法、電子カードおよび電子装置

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JP2005079165A true JP2005079165A (ja) 2005-03-24
JP2005079165A5 JP2005079165A5 (enExample) 2005-11-17

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US (1) US7196370B2 (enExample)
JP (1) JP2005079165A (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100691946B1 (ko) 2006-02-16 2007-03-09 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조방법
JP2007157893A (ja) * 2005-12-02 2007-06-21 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
JP2007214536A (ja) * 2006-02-07 2007-08-23 Hynix Semiconductor Inc フラッシュメモリ素子の製造方法
JP2008042188A (ja) * 2006-08-09 2008-02-21 Hynix Semiconductor Inc フラッシュメモリ素子の製造方法
KR100830579B1 (ko) * 2006-10-19 2008-05-21 삼성전자주식회사 비휘발성 메모리 장치 및 그 형성 방법
KR100854418B1 (ko) 2007-03-31 2008-08-26 주식회사 하이닉스반도체 비휘발성 메모리 소자의 제조방법
US7518915B2 (en) 2006-01-23 2009-04-14 Kabushiki Kaisha Toshiba Nonvolatile semiconductor storage device
US7671400B2 (en) 2007-10-15 2010-03-02 Samsung Electronics Co., Ltd. Semiconductor memory device including double spacers on sidewall of flating gate, electronic device including the same
US7812375B2 (en) 2003-05-28 2010-10-12 Samsung Electronics Co., Ltd. Non-volatile memory device and method of fabricating the same
US7833875B2 (en) 2003-05-28 2010-11-16 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US8212305B2 (en) 2003-09-05 2012-07-03 Renesas Electronics Corporation Semiconductor device with improved insulating film and floating gate arrangement to decrease memory cell size without reduction of capacitance

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079165A (ja) 2003-08-28 2005-03-24 Toshiba Corp 不揮発性半導体記憶装置とその製造方法、電子カードおよび電子装置
US7306552B2 (en) * 2004-12-03 2007-12-11 Samsung Electronics Co., Ltd. Semiconductor device having load resistor and method of fabricating the same
KR100611140B1 (ko) * 2004-12-28 2006-08-09 삼성전자주식회사 트랜지스터의 게이트, 이의 제조 방법 및 게이트 구조를포함하는 불휘발성 메모리 장치, 이의 제조 방법.
JP2006303308A (ja) * 2005-04-22 2006-11-02 Toshiba Corp 半導体装置およびその製造方法
JP2006310662A (ja) * 2005-04-28 2006-11-09 Toshiba Corp 不揮発性半導体メモリ装置
JP2007005380A (ja) * 2005-06-21 2007-01-11 Toshiba Corp 半導体装置
KR100660543B1 (ko) * 2005-10-24 2006-12-22 삼성전자주식회사 낸드형 플래시 메모리 장치 및 그 제조 방법
EP1786036A1 (en) * 2005-11-11 2007-05-16 STMicroelectronics S.r.l. Floating gate non-volatile memory cell and process for manufacturing
KR100650857B1 (ko) * 2005-12-23 2006-11-28 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조 방법
JP2007214530A (ja) * 2006-02-07 2007-08-23 Hynix Semiconductor Inc フラッシュメモリ素子の製造方法
JP4829015B2 (ja) * 2006-06-20 2011-11-30 株式会社東芝 不揮発性半導体記憶装置
KR100799151B1 (ko) * 2006-06-29 2008-01-29 주식회사 하이닉스반도체 플래시 메모리 소자의 소자 분리막 형성방법
KR20080010900A (ko) * 2006-07-28 2008-01-31 삼성전자주식회사 비휘발성 메모리 소자, 그 동작 방법 및 그 제조 방법
KR100763918B1 (ko) * 2006-07-28 2007-10-05 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
KR100833437B1 (ko) * 2006-09-06 2008-05-29 주식회사 하이닉스반도체 낸드 플래시 메모리 소자의 제조방법
KR100766232B1 (ko) * 2006-10-31 2007-10-10 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 제조 방법
KR101314328B1 (ko) * 2007-01-24 2013-10-01 삼성전자주식회사 비휘발성 메모리 소자 및 그 동작 방법
JP2008270351A (ja) 2007-04-17 2008-11-06 Toshiba Corp 不揮発性半導体記憶装置
JP5242118B2 (ja) * 2007-10-10 2013-07-24 株式会社東芝 半導体記憶装置
KR101402890B1 (ko) 2007-11-30 2014-06-27 삼성전자주식회사 비휘발성 기억 소자 및 그 형성 방법
JP5491705B2 (ja) * 2008-05-22 2014-05-14 株式会社東芝 半導体装置
JP2013201184A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 半導体記憶装置の製造方法
US8963114B2 (en) 2013-03-06 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. One transistor and one resistive (1T1R) random access memory (RRAM) structure with dual spacers
TWI745919B (zh) * 2020-04-08 2021-11-11 旺宏電子股份有限公司 記憶體元件

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3238576B2 (ja) * 1994-08-19 2001-12-17 株式会社東芝 不揮発性半導体記憶装置
US6222769B1 (en) * 1997-06-06 2001-04-24 Kabushiki Kaisha Toshiba Nonvolatile semiconductor storage device having buried electrode within shallow trench
JP3447939B2 (ja) * 1997-12-10 2003-09-16 株式会社東芝 不揮発性半導体メモリ及びデータ読み出し方法
US6353242B1 (en) * 1998-03-30 2002-03-05 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory
US6403421B1 (en) * 1998-04-22 2002-06-11 Sony Corporation Semiconductor nonvolatile memory device and method of producing the same
JP2000269366A (ja) * 1999-03-19 2000-09-29 Toshiba Corp 不揮発性半導体メモリ
JP2000311956A (ja) * 1999-04-27 2000-11-07 Toshiba Corp 不揮発性半導体記憶装置とその製造方法
US6611010B2 (en) * 1999-12-03 2003-08-26 Kabushiki Kaisha Toshiba Semiconductor device
JP2001168306A (ja) 1999-12-09 2001-06-22 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2001274365A (ja) * 2000-03-28 2001-10-05 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP4149644B2 (ja) 2000-08-11 2008-09-10 株式会社東芝 不揮発性半導体記憶装置
KR100436673B1 (ko) * 2001-05-28 2004-07-02 가부시끼가이샤 도시바 반도체 장치 및 그 제조 방법
JP2002359308A (ja) 2001-06-01 2002-12-13 Toshiba Corp 半導体記憶装置及びその製造方法
JP4439142B2 (ja) * 2001-06-26 2010-03-24 株式会社東芝 不揮発性半導体メモリの製造方法
JP4160283B2 (ja) 2001-09-04 2008-10-01 株式会社東芝 半導体装置の製造方法
US6894930B2 (en) * 2002-06-19 2005-05-17 Sandisk Corporation Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
JP3917063B2 (ja) 2002-11-21 2007-05-23 株式会社東芝 半導体装置及びその製造方法
JP2005079165A (ja) 2003-08-28 2005-03-24 Toshiba Corp 不揮発性半導体記憶装置とその製造方法、電子カードおよび電子装置
JP2005085996A (ja) 2003-09-09 2005-03-31 Toshiba Corp 半導体装置及びその製造方法
JP2005235987A (ja) * 2004-02-19 2005-09-02 Toshiba Corp 半導体記憶装置及び半導体記憶装置の製造方法

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7812375B2 (en) 2003-05-28 2010-10-12 Samsung Electronics Co., Ltd. Non-volatile memory device and method of fabricating the same
US9847422B2 (en) 2003-05-28 2017-12-19 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US9595612B2 (en) 2003-05-28 2017-03-14 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US9263588B2 (en) 2003-05-28 2016-02-16 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US9184232B2 (en) 2003-05-28 2015-11-10 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US7833875B2 (en) 2003-05-28 2010-11-16 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US8466507B2 (en) 2003-09-05 2013-06-18 Renesas Electronics Corporation Semiconductor device and a method of manufacturing the same
US8212305B2 (en) 2003-09-05 2012-07-03 Renesas Electronics Corporation Semiconductor device with improved insulating film and floating gate arrangement to decrease memory cell size without reduction of capacitance
US8907399B2 (en) 2003-09-05 2014-12-09 Renesas Electronics Corporation Semiconductor device with flash memory cells having improved arrangement for floating gate electrodes and control gate electrodes of the flash memory cells
US9412747B2 (en) 2003-09-05 2016-08-09 Renesas Electronics Corporation Semiconductor device and a method of manufacturing the same
JP2007157893A (ja) * 2005-12-02 2007-06-21 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
US7518915B2 (en) 2006-01-23 2009-04-14 Kabushiki Kaisha Toshiba Nonvolatile semiconductor storage device
JP2007214536A (ja) * 2006-02-07 2007-08-23 Hynix Semiconductor Inc フラッシュメモリ素子の製造方法
KR100691946B1 (ko) 2006-02-16 2007-03-09 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조방법
JP2008042188A (ja) * 2006-08-09 2008-02-21 Hynix Semiconductor Inc フラッシュメモリ素子の製造方法
US7829931B2 (en) 2006-10-19 2010-11-09 Samsung Electronics Co., Ltd. Nonvolatile memory devices having control electrodes configured to inhibit parasitic coupling capacitance
KR100830579B1 (ko) * 2006-10-19 2008-05-21 삼성전자주식회사 비휘발성 메모리 장치 및 그 형성 방법
KR100854418B1 (ko) 2007-03-31 2008-08-26 주식회사 하이닉스반도체 비휘발성 메모리 소자의 제조방법
US7671400B2 (en) 2007-10-15 2010-03-02 Samsung Electronics Co., Ltd. Semiconductor memory device including double spacers on sidewall of flating gate, electronic device including the same

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US20050047261A1 (en) 2005-03-03

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