JP2003511858A5 - - Google Patents

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Publication number
JP2003511858A5
JP2003511858A5 JP2001529014A JP2001529014A JP2003511858A5 JP 2003511858 A5 JP2003511858 A5 JP 2003511858A5 JP 2001529014 A JP2001529014 A JP 2001529014A JP 2001529014 A JP2001529014 A JP 2001529014A JP 2003511858 A5 JP2003511858 A5 JP 2003511858A5
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JP
Japan
Prior art keywords
seed layer
opening
forming
seed
layer
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Pending
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JP2001529014A
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English (en)
Japanese (ja)
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JP2003511858A (ja
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Priority claimed from US09/410,898 external-priority patent/US6136707A/en
Priority claimed from US09/563,733 external-priority patent/US6610151B1/en
Application filed filed Critical
Publication of JP2003511858A publication Critical patent/JP2003511858A/ja
Publication of JP2003511858A5 publication Critical patent/JP2003511858A5/ja
Pending legal-status Critical Current

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JP2001529014A 1999-10-02 2000-09-25 配線用の種層、並びに、それらの製造方法および製造装置 Pending JP2003511858A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09/410,898 1999-10-02
US09/410,898 US6136707A (en) 1999-10-02 1999-10-02 Seed layers for interconnects and methods for fabricating such seed layers
US09/563,733 2000-05-03
US09/563,733 US6610151B1 (en) 1999-10-02 2000-05-03 Seed layers for interconnects and methods and apparatus for their fabrication
PCT/US2000/040983 WO2001026145A1 (en) 1999-10-02 2000-09-25 Seed layers for interconnects and methods and apparatus for their fabrication

Publications (2)

Publication Number Publication Date
JP2003511858A JP2003511858A (ja) 2003-03-25
JP2003511858A5 true JP2003511858A5 (enExample) 2007-07-12

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JP2001529014A Pending JP2003511858A (ja) 1999-10-02 2000-09-25 配線用の種層、並びに、それらの製造方法および製造装置

Country Status (5)

Country Link
US (8) US6610151B1 (enExample)
JP (1) JP2003511858A (enExample)
KR (1) KR20020043604A (enExample)
TW (1) TW504795B (enExample)
WO (1) WO2001026145A1 (enExample)

Families Citing this family (118)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482734B1 (en) * 1998-01-20 2002-11-19 Lg Semicon Co., Ltd. Diffusion barrier layer for semiconductor device and fabrication method thereof
JP2000138201A (ja) * 1998-10-29 2000-05-16 Ulvac Seimaku Kk ハーフトーン位相シフト膜のドライエッチング方法および装置、ハーフトーン位相シフトフォトマスクおよびその作製方法、ならびに半導体回路およびその製作方法
US6610151B1 (en) * 1999-10-02 2003-08-26 Uri Cohen Seed layers for interconnects and methods and apparatus for their fabrication
US7105434B2 (en) * 1999-10-02 2006-09-12 Uri Cohen Advanced seed layery for metallic interconnects
KR100338112B1 (ko) * 1999-12-22 2002-05-24 박종섭 반도체 소자의 구리 금속 배선 형성 방법
WO2001048800A1 (en) * 1999-12-24 2001-07-05 Ebara Corporation Semiconductor wafer processing apparatus and processing method
KR100407680B1 (ko) * 2000-06-20 2003-12-01 주식회사 하이닉스반도체 반도체 소자의 금속 배선 형성방법
US6368954B1 (en) * 2000-07-28 2002-04-09 Advanced Micro Devices, Inc. Method of copper interconnect formation using atomic layer copper deposition
US6800554B2 (en) * 2000-12-18 2004-10-05 Intel Corporation Copper alloys for interconnections having improved electromigration characteristics and methods of making same
US6737740B2 (en) * 2001-02-08 2004-05-18 Micron Technology, Inc. High performance silicon contact for flip chip
US6764940B1 (en) 2001-03-13 2004-07-20 Novellus Systems, Inc. Method for depositing a diffusion barrier for copper interconnect applications
US6869515B2 (en) * 2001-03-30 2005-03-22 Uri Cohen Enhanced electrochemical deposition (ECD) filling of high aspect ratio openings
US9076843B2 (en) 2001-05-22 2015-07-07 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
US6842659B2 (en) * 2001-08-24 2005-01-11 Applied Materials Inc. Method and apparatus for providing intra-tool monitoring and control
US6936906B2 (en) * 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6503824B1 (en) * 2001-10-12 2003-01-07 Mosel Vitelic, Inc. Forming conductive layers on insulators by physical vapor deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
JP3727277B2 (ja) * 2002-02-26 2005-12-14 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6620724B1 (en) * 2002-05-09 2003-09-16 Infineon Technologies Ag Low resistivity deep trench fill for DRAM and EDRAM applications
US6724087B1 (en) * 2002-07-31 2004-04-20 Advanced Micro Devices, Inc. Laminated conductive lines and methods of forming the same
US6790773B1 (en) * 2002-08-28 2004-09-14 Novellus Systems, Inc. Process for forming barrier/seed structures for integrated circuits
US20040096586A1 (en) * 2002-11-15 2004-05-20 Schulberg Michelle T. System for deposition of mesoporous materials
KR20040060562A (ko) * 2002-12-30 2004-07-06 동부전자 주식회사 반도체 소자 제조시 배리어 메탈 산화방지방법
US6806192B2 (en) * 2003-01-24 2004-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of barrier-less integration with copper alloy
US6943111B2 (en) * 2003-02-10 2005-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier free copper interconnect by multi-layer copper seed
JP4188125B2 (ja) * 2003-03-05 2008-11-26 Ｔｄｋ株式会社 磁気記録媒体の製造方法及び製造装置
US7842605B1 (en) 2003-04-11 2010-11-30 Novellus Systems, Inc. Atomic layer profiling of diffusion barrier and metal seed layers
US8298933B2 (en) 2003-04-11 2012-10-30 Novellus Systems, Inc. Conformal films on semiconductor substrates
EP1482069A1 (en) * 2003-05-28 2004-12-01 Interuniversitair Microelektronica Centrum Vzw Method for producing polycrystalline silicon germanium suitable for micromachining
KR100560666B1 (ko) * 2003-07-07 2006-03-16 삼성전자주식회사 반도체 소자 제조용 금속막 증착 시스템 및 그 운용 방법
US6900127B2 (en) * 2003-08-27 2005-05-31 Texas Instruments Incorporated Multilayer integrated circuit copper plateable barriers
US7081647B2 (en) * 2003-09-29 2006-07-25 Matsushita Electric Industrial Co., Ltd. Microelectromechanical system and method for fabricating the same
US20050082606A1 (en) * 2003-10-20 2005-04-21 Stephan Grunow Low K dielectric integrated circuit interconnect structure
US7265038B2 (en) * 2003-11-25 2007-09-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a multi-layer seed layer for improved Cu ECP
KR100587658B1 (ko) * 2003-12-31 2006-06-08 동부일렉트로닉스 주식회사 이씨피공정에서의 터미날 효과 최소화 방법
US20050184288A1 (en) * 2004-02-25 2005-08-25 Tien-I Bao Semiconductor device having a second level of metallization formed over a first level with minimal damage to the first level and method
US7732326B2 (en) 2004-02-25 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having a second level of metallization formed over a first level with minimal damage to the first level and method
US7067409B2 (en) * 2004-05-10 2006-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
US7378744B2 (en) * 2004-05-10 2008-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
US7306962B2 (en) * 2004-06-17 2007-12-11 Sharp Laboratories Of America, Inc. Electroformed metallization
US7112470B2 (en) * 2004-09-15 2006-09-26 International Business Machines Corporation Chip dicing
US7704368B2 (en) 2005-01-25 2010-04-27 Taiwan Semiconductor Manufacturing Co. Ltd. Method and apparatus for electrochemical plating semiconductor wafers
RU2364498C2 (ru) * 2005-03-09 2009-08-20 АйЭйчАй КОРПОРЕЙШН Зажимное устройство
EP1909320A1 (en) * 2006-10-05 2008-04-09 ST Microelectronics Crolles 2 SAS Copper diffusion barrier
US20070080455A1 (en) * 2005-10-11 2007-04-12 International Business Machines Corporation Semiconductors and methods of making
US7863183B2 (en) * 2006-01-18 2011-01-04 International Business Machines Corporation Method for fabricating last level copper-to-C4 connection with interfacial cap structure
US7645696B1 (en) * 2006-06-22 2010-01-12 Novellus Systems, Inc. Deposition of thin continuous PVD seed layers having improved adhesion to the barrier layer
JP2008028058A (ja) 2006-07-20 2008-02-07 Tokyo Electron Ltd 半導体装置の製造方法、半導体装置の製造装置、半導体装置及び記憶媒体
US7605078B2 (en) * 2006-09-29 2009-10-20 Tokyo Electron Limited Integration of a variable thickness copper seed layer in copper metallization
US7510634B1 (en) 2006-11-10 2009-03-31 Novellus Systems, Inc. Apparatus and methods for deposition and/or etch selectivity
KR100763136B1 (ko) 2006-12-11 2007-10-02 동부일렉트로닉스 주식회사 시스템 인 패키지의 웨이퍼 본딩 방법
DE102007004884A1 (de) * 2007-01-31 2008-08-14 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer Metallschicht über einem strukturierten Dielektrikum durch stromlose Abscheidung unter Anwendung einer selektiv vorgesehenen Aktivierungsschicht
US8058164B2 (en) * 2007-06-04 2011-11-15 Lam Research Corporation Methods of fabricating electronic devices using direct copper plating
JP2009016520A (ja) * 2007-07-04 2009-01-22 Tokyo Electron Ltd 半導体装置の製造方法及び半導体装置の製造装置
US7709370B2 (en) 2007-09-20 2010-05-04 International Business Machines Corporation Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures
US8618663B2 (en) 2007-09-20 2013-12-31 International Business Machines Corporation Patternable dielectric film structure with improved lithography and method of fabricating same
US8084862B2 (en) 2007-09-20 2011-12-27 International Business Machines Corporation Interconnect structures with patternable low-k dielectrics and method of fabricating same
US20090127097A1 (en) * 2007-11-16 2009-05-21 Kei-Wei Chen Forming Seed Layer in Nano-Trench Structure Using Net Deposition and Net Etch
US7727890B2 (en) 2007-12-10 2010-06-01 International Business Machines Corporation High aspect ratio electroplated metal feature and method
KR100924556B1 (ko) 2008-01-04 2009-11-02 주식회사 하이닉스반도체 반도체 소자의 금속배선 및 그 형성방법
US7704886B2 (en) * 2008-02-14 2010-04-27 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-step Cu seed layer formation for improving sidewall coverage
US8252690B2 (en) * 2008-02-14 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. In situ Cu seed layer formation for improving sidewall coverage
US7879720B2 (en) * 2008-09-30 2011-02-01 Samsung Electronics Co., Ltd. Methods of forming electrical interconnects using electroless plating techniques that inhibit void formation
US9159571B2 (en) 2009-04-16 2015-10-13 Lam Research Corporation Tungsten deposition process using germanium-containing reducing agent
US20100267230A1 (en) * 2009-04-16 2010-10-21 Anand Chandrashekar Method for forming tungsten contacts and interconnects with small critical dimensions
KR20100133834A (ko) * 2009-06-12 2010-12-22 웅진케미칼 주식회사 저융점사를 포함하는 원단
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US7956463B2 (en) * 2009-09-16 2011-06-07 International Business Machines Corporation Large grain size conductive structure for narrow interconnect openings
JP5498751B2 (ja) * 2009-10-05 2014-05-21 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8900663B2 (en) * 2009-12-28 2014-12-02 Gvd Corporation Methods for coating articles
US9714474B2 (en) * 2010-04-06 2017-07-25 Tel Nexx, Inc. Seed layer deposition in microscale features
WO2012039932A2 (en) * 2010-09-21 2012-03-29 Applied Materials, Inc. Methods for forming layers on a substrate
TWI413468B (zh) * 2010-12-29 2013-10-21 Unimicron Technology Corp 製造內嵌式細線路之方法
US8399353B2 (en) * 2011-01-27 2013-03-19 Tokyo Electron Limited Methods of forming copper wiring and copper film, and film forming system
US8524599B2 (en) 2011-03-17 2013-09-03 Micron Technology, Inc. Methods of forming at least one conductive element and methods of forming a semiconductor structure
JP2012231096A (ja) * 2011-04-27 2012-11-22 Elpida Memory Inc 半導体装置及びその製造方法
US8525339B2 (en) 2011-07-27 2013-09-03 International Business Machines Corporation Hybrid copper interconnect structure and method of fabricating same
US8946082B2 (en) * 2011-09-16 2015-02-03 GlobalFoundries, Inc. Methods for forming semiconductor devices
US20130140688A1 (en) * 2011-12-02 2013-06-06 Chun-Hung Chen Through Silicon Via and Method of Manufacturing the Same
US10381266B2 (en) 2012-03-27 2019-08-13 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
JP6273257B2 (ja) 2012-03-27 2018-01-31 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ タングステンによるフィーチャ充填
US20140046475A1 (en) * 2012-08-09 2014-02-13 Applied Materials, Inc. Method and apparatus deposition process synchronization
US8853080B2 (en) 2012-09-09 2014-10-07 Novellus Systems, Inc. Method for depositing tungsten film with low roughness and low resistivity
US8729702B1 (en) 2012-11-20 2014-05-20 Stmicroelectronics, Inc. Copper seed layer for an interconnect structure having a doping concentration level gradient
US9153486B2 (en) 2013-04-12 2015-10-06 Lam Research Corporation CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications
US9589808B2 (en) 2013-12-19 2017-03-07 Lam Research Corporation Method for depositing extremely low resistivity tungsten
US9748137B2 (en) 2014-08-21 2017-08-29 Lam Research Corporation Method for void-free cobalt gap fill
US9349637B2 (en) 2014-08-21 2016-05-24 Lam Research Corporation Method for void-free cobalt gap fill
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9768060B2 (en) * 2014-10-29 2017-09-19 Applied Materials, Inc. Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD
US9953984B2 (en) 2015-02-11 2018-04-24 Lam Research Corporation Tungsten for wordline applications
US10170320B2 (en) 2015-05-18 2019-01-01 Lam Research Corporation Feature fill with multi-stage nucleation inhibition
US9613818B2 (en) 2015-05-27 2017-04-04 Lam Research Corporation Deposition of low fluorine tungsten by sequential CVD process
US9978605B2 (en) 2015-05-27 2018-05-22 Lam Research Corporation Method of forming low resistivity fluorine free tungsten film without nucleation
US9754824B2 (en) 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
US10276397B2 (en) * 2015-06-30 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. CVD metal seed layer
US9754891B2 (en) 2015-09-23 2017-09-05 International Business Machines Corporation Low-temperature diffusion doping of copper interconnects independent of seed layer composition
US9735051B2 (en) 2015-12-14 2017-08-15 International Business Machines Corporation Semiconductor device interconnect structures formed by metal reflow process
BR122022007763B1 (pt) 2016-02-05 2023-03-14 Board Of Regents Of The University Of Texas System Método para a preparação de um acionador de polímero eletroativo iônico de um dispositivo médico tubular
BR122022007761B1 (pt) 2016-02-05 2023-01-31 Board Of Regents Of The University Of Texas System Aparelho cirúrgico
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US9716063B1 (en) 2016-08-17 2017-07-25 International Business Machines Corporation Cobalt top layer advanced metallization for interconnects
US9859215B1 (en) 2016-08-17 2018-01-02 International Business Machines Corporation Formation of advanced interconnects
US9852990B1 (en) 2016-08-17 2017-12-26 International Business Machines Corporation Cobalt first layer advanced metallization for interconnects
US10115670B2 (en) 2016-08-17 2018-10-30 International Business Machines Corporation Formation of advanced interconnects including set of metal conductor structures in patterned dielectric layer
US9941212B2 (en) 2016-08-17 2018-04-10 International Business Machines Corporation Nitridized ruthenium layer for formation of cobalt interconnects
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
WO2019036292A1 (en) 2017-08-14 2019-02-21 Lam Research Corporation METHOD FOR METAL CASTING FOR THREE-DIMENSIONAL NAND AND VERTICAL WORDS LINE
US11195748B2 (en) 2017-09-27 2021-12-07 Invensas Corporation Interconnect structures and methods for forming same
JP2021523292A (ja) 2018-05-03 2021-09-02 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ３ｄ ｎａｎｄ構造内にタングステンおよび他の金属を堆積させる方法
US10937960B2 (en) * 2018-08-14 2021-03-02 Newport Fab, Llc Concurrent fabrication of and structure for capacitive terminals and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch
KR102828798B1 (ko) 2018-12-05 2025-07-02 램 리써치 코포레이션 보이드 프리 (void free) 저응력 (low stress) 충진
CN113424300B (zh) 2018-12-14 2025-05-09 朗姆研究公司 在3d nand结构上的原子层沉积
WO2020210260A1 (en) 2019-04-11 2020-10-15 Lam Research Corporation High step coverage tungsten deposition
WO2020236749A1 (en) 2019-05-22 2020-11-26 Lam Research Corporation Nucleation-free tungsten deposition
CN112103242B (zh) * 2019-06-18 2024-12-20 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
KR20220047333A (ko) 2019-08-12 2022-04-15 램 리써치 코포레이션 텅스텐 증착

Family Cites Families (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US121608A (en) * 1871-12-05 Improvement in animal-traps
US57527A (en) * 1866-08-28 Bronzing-machine
US147104A (en) * 1874-02-03 Improvement in machines for making cotton-laps
US110147A (en) * 1870-12-13 Improvement in side-saddle trees
US116427A (en) * 1871-06-27 Improvement in dentists and barbers chairs
US140196A (en) * 1873-06-24 Abbaham t
US129828A (en) * 1872-07-23 Improvement in lamps
US45485A (en) * 1864-12-20 Improved car-replacer
US157431A (en) * 1874-12-01 Improvement in bottle-stoppers
US188850A (en) * 1877-03-27 Improvement in clothes-pounders
US241321A (en) * 1881-05-10 Charles h
JPH02296324A (ja) * 1989-05-11 1990-12-06 Nec Corp 半導体装置の製造方法
JP2856782B2 (ja) 1989-10-12 1999-02-10 レール・リキード・ソシエテ・アノニム・プール・レテユード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 低温ｃｖｄによる銅薄膜の形成方法
US5173442A (en) 1990-07-23 1992-12-22 Microelectronics And Computer Technology Corporation Methods of forming channels and vias in insulating layers
US5219787A (en) 1990-07-23 1993-06-15 Microelectronics And Computer Technology Corporation Trenching techniques for forming channels, vias and components in substrates
US5151168A (en) * 1990-09-24 1992-09-29 Micron Technology, Inc. Process for metallizing integrated circuits with electrolytically-deposited copper
US5612254A (en) 1992-06-29 1997-03-18 Intel Corporation Methods of forming an interconnect on a semiconductor substrate
US5403620A (en) 1992-10-13 1995-04-04 Regents Of The University Of California Catalysis in organometallic CVD of thin metal films
US5354712A (en) 1992-11-12 1994-10-11 Northern Telecom Limited Method for forming interconnect structures for integrated circuits
JPH06349952A (ja) * 1993-06-14 1994-12-22 Oki Electric Ind Co Ltd 配線形成方法
JP2616402B2 (ja) * 1993-10-18 1997-06-04 日本電気株式会社 半導体装置の製造方法
US5549808A (en) * 1995-05-12 1996-08-27 International Business Machines Corporation Method for forming capped copper electrical interconnects
JP3979687B2 (ja) 1995-10-26 2007-09-19 アプライド マテリアルズ インコーポレイテッド ハロゲンをドープした酸化珪素膜の膜安定性を改良する方法
JPH11510219A (ja) * 1995-12-19 1999-09-07 エフエスアイ インターナショナル インコーポレイテッド スプレー・プロセッサを用いる金属膜の無電解めっき
US6188136B1 (en) * 1996-06-26 2001-02-13 Kabushiki Kaisha Toshiba Semiconductor device including a wiring layer having a non-doped or high resistivity polycrystal silicon portion
US5693563A (en) 1996-07-15 1997-12-02 Chartered Semiconductor Manufacturing Pte Ltd. Etch stop for copper damascene process
US6110828A (en) * 1996-12-30 2000-08-29 Applied Materials, Inc. In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization
US5913147A (en) 1997-01-21 1999-06-15 Advanced Micro Devices, Inc. Method for fabricating copper-aluminum metallization
US6139697A (en) * 1997-01-31 2000-10-31 Applied Materials, Inc. Low temperature integrated via and trench fill process and apparatus
US5908813A (en) * 1997-02-14 1999-06-01 Micron Technology, Inc. Method making integrated circuit metallization with superconductor BEOL wiring
US6139905A (en) * 1997-04-11 2000-10-31 Applied Materials, Inc. Integrated CVD/PVD Al planarization using ultra-thin nucleation layers
US6387805B2 (en) * 1997-05-08 2002-05-14 Applied Materials, Inc. Copper alloy seed layer for copper metallization
US6605197B1 (en) * 1997-05-13 2003-08-12 Applied Materials, Inc. Method of sputtering copper to fill trenches and vias
US5969422A (en) * 1997-05-15 1999-10-19 Advanced Micro Devices, Inc. Plated copper interconnect structure
US5897752A (en) * 1997-05-20 1999-04-27 Applied Materials, Inc. Wafer bias ring in a sustained self-sputtering reactor
US6069068A (en) * 1997-05-30 2000-05-30 International Business Machines Corporation Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity
US5913145A (en) * 1997-08-28 1999-06-15 Texas Instruments Incorporated Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures
US6042700A (en) * 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
US5882498A (en) * 1997-10-16 1999-03-16 Advanced Micro Devices, Inc. Method for reducing oxidation of electroplating chamber contacts and improving uniform electroplating of a substrate
US5897368A (en) * 1997-11-10 1999-04-27 General Electric Company Method of fabricating metallized vias with steep walls
KR100273989B1 (ko) * 1997-11-25 2001-01-15 윤종용 반도체장치의콘택형성방법
JP4947834B2 (ja) * 1997-11-26 2012-06-06 アプライド マテリアルズ インコーポレイテッド ダメージフリー被覆刻設堆積法
US6174811B1 (en) * 1998-12-02 2001-01-16 Applied Materials, Inc. Integrated deposition process for copper metallization
US6251528B1 (en) * 1998-01-09 2001-06-26 International Business Machines Corporation Method to plate C4 to copper stud
US6169030B1 (en) * 1998-01-14 2001-01-02 Applied Materials, Inc. Metallization process and method
JP3501937B2 (ja) * 1998-01-30 2004-03-02 富士通株式会社 半導体装置の製造方法
US6249055B1 (en) * 1998-02-03 2001-06-19 Advanced Micro Devices, Inc. Self-encapsulated copper metallization
US6281121B1 (en) * 1998-03-06 2001-08-28 Advanced Micro Devices, Inc. Damascene metal interconnects using highly directional deposition of barrier and/or seed layers including (III) filling metal
JPH11256318A (ja) * 1998-03-10 1999-09-21 Sony Corp 導電性薄膜及びその形成方法、並びに、半導体装置及びその製造方法
US6197181B1 (en) 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
US6130156A (en) 1998-04-01 2000-10-10 Texas Instruments Incorporated Variable doping of metal plugs for enhanced reliability
US6181012B1 (en) * 1998-04-27 2001-01-30 International Business Machines Corporation Copper interconnection structure incorporating a metal seed layer
US6015749A (en) * 1998-05-04 2000-01-18 Taiwan Semiconductor Manufacturing Company Method to improve adhesion between copper and titanium nitride, for copper interconnect structures, via the use of an ion implantation procedure
US6372633B1 (en) 1998-07-08 2002-04-16 Applied Materials, Inc. Method and apparatus for forming metal interconnects
US6461675B2 (en) * 1998-07-10 2002-10-08 Cvc Products, Inc. Method for forming a copper film on a substrate
JP3187011B2 (ja) * 1998-08-31 2001-07-11 日本電気株式会社 半導体装置の製造方法
US6080285A (en) 1998-09-14 2000-06-27 Applied Materials, Inc. Multiple step ionized metal plasma deposition process for conformal step coverage
US6251759B1 (en) * 1998-10-03 2001-06-26 Applied Materials, Inc. Method and apparatus for depositing material upon a semiconductor wafer using a transition chamber of a multiple chamber semiconductor wafer processing system
US6515343B1 (en) * 1998-11-19 2003-02-04 Quicklogic Corporation Metal-to-metal antifuse with non-conductive diffusion barrier
US6187670B1 (en) * 1998-12-02 2001-02-13 Advanced Micro Devices, Inc. Multi-stage method for forming optimized semiconductor seed layers
US6242349B1 (en) * 1998-12-09 2001-06-05 Advanced Micro Devices, Inc. Method of forming copper/copper alloy interconnection with reduced electromigration
US6261946B1 (en) 1999-01-05 2001-07-17 Advanced Micro Devices, Inc. Method for forming semiconductor seed layers by high bias deposition
US6258707B1 (en) * 1999-01-07 2001-07-10 International Business Machines Corporation Triple damascence tungsten-copper interconnect structure
EP1149416A1 (en) * 1999-01-08 2001-10-31 Applied Materials, Inc. Method of depositing a copper seed layer which promotes improved feature surface coverage
US6290825B1 (en) 1999-02-12 2001-09-18 Applied Materials, Inc. High-density plasma source for ionized metal deposition
US6440289B1 (en) * 1999-04-02 2002-08-27 Advanced Micro Devices, Inc. Method for improving seed layer electroplating for semiconductor
US6037258A (en) * 1999-05-07 2000-03-14 Taiwan Semiconductor Manufacturing Company Method of forming a smooth copper seed layer for a copper damascene structure
US6146517A (en) 1999-05-19 2000-11-14 Infineon Technologies North America Corp. Integrated circuits with copper metallization for interconnections
US6147404A (en) * 1999-05-24 2000-11-14 Advanced Micro Devices, Inc. Dual barrier and conductor deposition in a dual damascene process for semiconductors
US6258223B1 (en) * 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
US6627542B1 (en) * 1999-07-12 2003-09-30 Applied Materials, Inc. Continuous, non-agglomerated adhesion of a seed layer to a barrier layer
US6686280B1 (en) * 1999-07-22 2004-02-03 Taiwan Semiconductor Manufacturing Company Sidewall coverage for copper damascene filling
US6410418B1 (en) * 1999-08-18 2002-06-25 Advanced Micro Devices, Inc. Recess metallization via selective insulator formation on nucleation/seed layer
US6433429B1 (en) * 1999-09-01 2002-08-13 International Business Machines Corporation Copper conductive line with redundant liner and method of making
US6184138B1 (en) * 1999-09-07 2001-02-06 Chartered Semiconductor Manufacturing Ltd. Method to create a controllable and reproducible dual copper damascene structure
US6136707A (en) * 1999-10-02 2000-10-24 Cohen; Uri Seed layers for interconnects and methods for fabricating such seed layers
US6610151B1 (en) * 1999-10-02 2003-08-26 Uri Cohen Seed layers for interconnects and methods and apparatus for their fabrication
US6924226B2 (en) * 1999-10-02 2005-08-02 Uri Cohen Methods for making multiple seed layers for metallic interconnects
US6395164B1 (en) * 1999-10-07 2002-05-28 International Business Machines Corporation Copper seed layer repair technique using electroless touch-up
US6398929B1 (en) * 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
US20030116427A1 (en) 2001-08-30 2003-06-26 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6458251B1 (en) * 1999-11-16 2002-10-01 Applied Materials, Inc. Pressure modulation method to obtain improved step coverage of seed layer
US6387800B1 (en) * 1999-12-20 2002-05-14 Taiwan Semiconductor Manufacturing Company Method of forming barrier and seed layers for electrochemical deposition of copper
US6395642B1 (en) * 1999-12-28 2002-05-28 Taiwan Semiconductor Manufacturing Company Method to improve copper process integration
US6403465B1 (en) * 1999-12-28 2002-06-11 Taiwan Semiconductor Manufacturing Company Method to improve copper barrier properties
US6277249B1 (en) 2000-01-21 2001-08-21 Applied Materials Inc. Integrated process for copper via filling using a magnetron and target producing highly energetic ions
US6251242B1 (en) 2000-01-21 2001-06-26 Applied Materials, Inc. Magnetron and target producing an extended plasma region in a sputter reactor
US6225221B1 (en) * 2000-02-10 2001-05-01 Chartered Semiconductor Manufacturing Ltd. Method to deposit a copper seed layer for dual damascene interconnects
US6228759B1 (en) 2000-05-02 2001-05-08 Advanced Micro Devices, Inc. Method of forming an alloy precipitate to surround interconnect to minimize electromigration
US6368954B1 (en) * 2000-07-28 2002-04-09 Advanced Micro Devices, Inc. Method of copper interconnect formation using atomic layer copper deposition
US6506668B1 (en) * 2001-06-22 2003-01-14 Advanced Micro Devices, Inc. Utilization of annealing enhanced or repaired seed layer to improve copper interconnect reliability
US6936906B2 (en) * 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6515368B1 (en) * 2001-12-07 2003-02-04 Advanced Micro Devices, Inc. Semiconductor device with copper-filled via includes a copper-zinc/alloy film for reduced electromigration of copper
US7910165B2 (en) * 2002-06-04 2011-03-22 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US20040140196A1 (en) * 2003-01-17 2004-07-22 Applied Materials, Inc. Shaping features in sputter deposition
US6806192B2 (en) * 2003-01-24 2004-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of barrier-less integration with copper alloy
US6943111B2 (en) * 2003-02-10 2005-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier free copper interconnect by multi-layer copper seed
US7101790B2 (en) * 2003-03-28 2006-09-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a robust copper interconnect by dilute metal doping
US20050045485A1 (en) * 2003-09-03 2005-03-03 Taiwan Semiconductor Manufacturing Co. Ltd. Method to improve copper electrochemical deposition
US7265038B2 (en) * 2003-11-25 2007-09-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a multi-layer seed layer for improved Cu ECP
US7390329B2 (en) * 2004-05-07 2008-06-24 Usgi Medical, Inc. Methods for grasping and cinching tissue anchors
US8828054B2 (en) * 2008-04-02 2014-09-09 Liavatec Corporation Method and apparatus for meniscal repair
US9929006B2 (en) 2016-07-20 2018-03-27 Micron Technology, Inc. Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures

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