US20030190426A1
(en)
*
|
2002-04-03 |
2003-10-09 |
Deenesh Padhi |
Electroless deposition method
|
US6905622B2
(en)
*
|
2002-04-03 |
2005-06-14 |
Applied Materials, Inc. |
Electroless deposition method
|
US6899816B2
(en)
*
|
2002-04-03 |
2005-05-31 |
Applied Materials, Inc. |
Electroless deposition method
|
US20030207206A1
(en)
*
|
2002-04-22 |
2003-11-06 |
General Electric Company |
Limited play data storage media and method for limiting access to data thereon
|
US6821909B2
(en)
*
|
2002-10-30 |
2004-11-23 |
Applied Materials, Inc. |
Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application
|
CN100390105C
(en)
|
2003-03-26 |
2008-05-28 |
圣戈本陶瓷及塑料股份有限公司 |
Silicon carbide ceramic components having oxide layer
|
US20060283716A1
(en)
*
|
2003-07-08 |
2006-12-21 |
Hooman Hafezi |
Method of direct plating of copper on a ruthenium alloy
|
US7654221B2
(en)
*
|
2003-10-06 |
2010-02-02 |
Applied Materials, Inc. |
Apparatus for electroless deposition of metals onto semiconductor substrates
|
US7827930B2
(en)
*
|
2004-01-26 |
2010-11-09 |
Applied Materials, Inc. |
Apparatus for electroless deposition of metals onto semiconductor substrates
|
US7064065B2
(en)
*
|
2003-10-15 |
2006-06-20 |
Applied Materials, Inc. |
Silver under-layers for electroless cobalt alloys
|
US7465358B2
(en)
*
|
2003-10-15 |
2008-12-16 |
Applied Materials, Inc. |
Measurement techniques for controlling aspects of a electroless deposition process
|
US20070111519A1
(en)
*
|
2003-10-15 |
2007-05-17 |
Applied Materials, Inc. |
Integrated electroless deposition system
|
WO2005038084A2
(en)
*
|
2003-10-17 |
2005-04-28 |
Applied Materials, Inc. |
Selective self-initiating electroless capping of copper with cobalt-containing alloys
|
US20050095830A1
(en)
*
|
2003-10-17 |
2005-05-05 |
Applied Materials, Inc. |
Selective self-initiating electroless capping of copper with cobalt-containing alloys
|
US7205233B2
(en)
*
|
2003-11-07 |
2007-04-17 |
Applied Materials, Inc. |
Method for forming CoWRe alloys by electroless deposition
|
US7193323B2
(en)
*
|
2003-11-18 |
2007-03-20 |
International Business Machines Corporation |
Electroplated CoWP composite structures as copper barrier layers
|
US20060003570A1
(en)
*
|
2003-12-02 |
2006-01-05 |
Arulkumar Shanmugasundram |
Method and apparatus for electroless capping with vapor drying
|
US20060033678A1
(en)
*
|
2004-01-26 |
2006-02-16 |
Applied Materials, Inc. |
Integrated electroless deposition system
|
US20050161338A1
(en)
*
|
2004-01-26 |
2005-07-28 |
Applied Materials, Inc. |
Electroless cobalt alloy deposition process
|
US7256111B2
(en)
*
|
2004-01-26 |
2007-08-14 |
Applied Materials, Inc. |
Pretreatment for electroless deposition
|
US20050181226A1
(en)
*
|
2004-01-26 |
2005-08-18 |
Applied Materials, Inc. |
Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber
|
US20050170650A1
(en)
*
|
2004-01-26 |
2005-08-04 |
Hongbin Fang |
Electroless palladium nitrate activation prior to cobalt-alloy deposition
|
US20050230350A1
(en)
|
2004-02-26 |
2005-10-20 |
Applied Materials, Inc. |
In-situ dry clean chamber for front end of line fabrication
|
US20050253268A1
(en)
*
|
2004-04-22 |
2005-11-17 |
Shao-Ta Hsu |
Method and structure for improving adhesion between intermetal dielectric layer and cap layer
|
US20060240187A1
(en)
*
|
2005-01-27 |
2006-10-26 |
Applied Materials, Inc. |
Deposition of an intermediate catalytic layer on a barrier layer for copper metallization
|
US20060252252A1
(en)
*
|
2005-03-18 |
2006-11-09 |
Zhize Zhu |
Electroless deposition processes and compositions for forming interconnects
|
WO2006102318A2
(en)
*
|
2005-03-18 |
2006-09-28 |
Applied Materials, Inc. |
Electroless deposition process on a contact containing silicon or silicide
|
US7651934B2
(en)
|
2005-03-18 |
2010-01-26 |
Applied Materials, Inc. |
Process for electroless copper deposition
|
US20060246699A1
(en)
*
|
2005-03-18 |
2006-11-02 |
Weidman Timothy W |
Process for electroless copper deposition on a ruthenium seed
|
JP5380838B2
(en)
*
|
2005-06-22 |
2014-01-08 |
日本電気株式会社 |
Manufacturing method of semiconductor device
|
US20070071888A1
(en)
*
|
2005-09-21 |
2007-03-29 |
Arulkumar Shanmugasundram |
Method and apparatus for forming device features in an integrated electroless deposition system
|
US20070099422A1
(en)
*
|
2005-10-28 |
2007-05-03 |
Kapila Wijekoon |
Process for electroless copper deposition
|
US20070099806A1
(en)
*
|
2005-10-28 |
2007-05-03 |
Stewart Michael P |
Composition and method for selectively removing native oxide from silicon-containing surfaces
|
US20070210448A1
(en)
*
|
2006-03-10 |
2007-09-13 |
International Business Machines Corporation |
Electroless cobalt-containing liner for middle-of-the-line (mol) applications
|
JP4878518B2
(en)
*
|
2006-07-28 |
2012-02-15 |
ルネサスエレクトロニクス株式会社 |
Semiconductor device and manufacturing method thereof
|
US7867900B2
(en)
*
|
2007-09-28 |
2011-01-11 |
Applied Materials, Inc. |
Aluminum contact integration on cobalt silicide junction
|
US20090117731A1
(en)
*
|
2007-11-01 |
2009-05-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Semiconductor interconnection structure and method for making the same
|
US20090127711A1
(en)
*
|
2007-11-15 |
2009-05-21 |
International Business Machines Corporation |
Interconnect structure and method of making same
|
JP5388191B2
(en)
*
|
2009-05-26 |
2014-01-15 |
Jx日鉱日石金属株式会社 |
Plating object having through silicon via and method for forming the same
|
US8237191B2
(en)
*
|
2009-08-11 |
2012-08-07 |
International Business Machines Corporation |
Heterojunction bipolar transistors and methods of manufacture
|
US8373832B2
(en)
*
|
2009-10-27 |
2013-02-12 |
Ulvac, Inc. |
Wiring layer, semiconductor device, and liquid crystal display device using semiconductor device
|
US9324576B2
(en)
|
2010-05-27 |
2016-04-26 |
Applied Materials, Inc. |
Selective etch for silicon films
|
US10283321B2
(en)
|
2011-01-18 |
2019-05-07 |
Applied Materials, Inc. |
Semiconductor processing system and methods using capacitively coupled plasma
|
US8771539B2
(en)
|
2011-02-22 |
2014-07-08 |
Applied Materials, Inc. |
Remotely-excited fluorine and water vapor etch
|
US8999856B2
(en)
|
2011-03-14 |
2015-04-07 |
Applied Materials, Inc. |
Methods for etch of sin films
|
US9064815B2
(en)
|
2011-03-14 |
2015-06-23 |
Applied Materials, Inc. |
Methods for etch of metal and metal-oxide films
|
CN102412191B
(en)
*
|
2011-05-13 |
2014-02-05 |
上海华力微电子有限公司 |
Transmission electron microscopy sample preparation method capable of detecting Damascus seed crystal layer and barrier layer
|
US8771536B2
(en)
|
2011-08-01 |
2014-07-08 |
Applied Materials, Inc. |
Dry-etch for silicon-and-carbon-containing films
|
US8679982B2
(en)
|
2011-08-26 |
2014-03-25 |
Applied Materials, Inc. |
Selective suppression of dry-etch rate of materials containing both silicon and oxygen
|
US8679983B2
(en)
|
2011-09-01 |
2014-03-25 |
Applied Materials, Inc. |
Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
|
US8927390B2
(en)
|
2011-09-26 |
2015-01-06 |
Applied Materials, Inc. |
Intrench profile
|
US8808563B2
(en)
|
2011-10-07 |
2014-08-19 |
Applied Materials, Inc. |
Selective etch of silicon by way of metastable hydrogen termination
|
WO2013070436A1
(en)
|
2011-11-08 |
2013-05-16 |
Applied Materials, Inc. |
Methods of reducing substrate dislocation during gapfill processing
|
CN102496597A
(en)
*
|
2011-12-30 |
2012-06-13 |
中国科学院宁波材料技术与工程研究所 |
Forming method for Cu interconnect line diffusion barrier of integrated circuit
|
US9267739B2
(en)
|
2012-07-18 |
2016-02-23 |
Applied Materials, Inc. |
Pedestal with multi-zone temperature control and multiple purge capabilities
|
US9373517B2
(en)
|
2012-08-02 |
2016-06-21 |
Applied Materials, Inc. |
Semiconductor processing with DC assisted RF power for improved control
|
US9034770B2
(en)
|
2012-09-17 |
2015-05-19 |
Applied Materials, Inc. |
Differential silicon oxide etch
|
US9023734B2
(en)
|
2012-09-18 |
2015-05-05 |
Applied Materials, Inc. |
Radical-component oxide etch
|
US9390937B2
(en)
|
2012-09-20 |
2016-07-12 |
Applied Materials, Inc. |
Silicon-carbon-nitride selective etch
|
US9132436B2
(en)
|
2012-09-21 |
2015-09-15 |
Applied Materials, Inc. |
Chemical control features in wafer process equipment
|
JP5725073B2
(en)
|
2012-10-30 |
2015-05-27 |
三菱電機株式会社 |
Semiconductor device manufacturing method, semiconductor device
|
US8765574B2
(en)
|
2012-11-09 |
2014-07-01 |
Applied Materials, Inc. |
Dry etch process
|
US8969212B2
(en)
|
2012-11-20 |
2015-03-03 |
Applied Materials, Inc. |
Dry-etch selectivity
|
US8980763B2
(en)
|
2012-11-30 |
2015-03-17 |
Applied Materials, Inc. |
Dry-etch for selective tungsten removal
|
US9064816B2
(en)
|
2012-11-30 |
2015-06-23 |
Applied Materials, Inc. |
Dry-etch for selective oxidation removal
|
US9111877B2
(en)
|
2012-12-18 |
2015-08-18 |
Applied Materials, Inc. |
Non-local plasma oxide etch
|
US8921234B2
(en)
|
2012-12-21 |
2014-12-30 |
Applied Materials, Inc. |
Selective titanium nitride etching
|
US10256079B2
(en)
|
2013-02-08 |
2019-04-09 |
Applied Materials, Inc. |
Semiconductor processing systems having multiple plasma configurations
|
US9362130B2
(en)
|
2013-03-01 |
2016-06-07 |
Applied Materials, Inc. |
Enhanced etching processes using remote plasma sources
|
US9040422B2
(en)
|
2013-03-05 |
2015-05-26 |
Applied Materials, Inc. |
Selective titanium nitride removal
|
US8801952B1
(en)
|
2013-03-07 |
2014-08-12 |
Applied Materials, Inc. |
Conformal oxide dry etch
|
US10170282B2
(en)
|
2013-03-08 |
2019-01-01 |
Applied Materials, Inc. |
Insulated semiconductor faceplate designs
|
US20140271097A1
(en)
|
2013-03-15 |
2014-09-18 |
Applied Materials, Inc. |
Processing systems and methods for halide scavenging
|
US8895449B1
(en)
|
2013-05-16 |
2014-11-25 |
Applied Materials, Inc. |
Delicate dry clean
|
US9114438B2
(en)
|
2013-05-21 |
2015-08-25 |
Applied Materials, Inc. |
Copper residue chamber clean
|
US9493879B2
(en)
|
2013-07-12 |
2016-11-15 |
Applied Materials, Inc. |
Selective sputtering for pattern transfer
|
US9773648B2
(en)
|
2013-08-30 |
2017-09-26 |
Applied Materials, Inc. |
Dual discharge modes operation for remote plasma
|
US8956980B1
(en)
|
2013-09-16 |
2015-02-17 |
Applied Materials, Inc. |
Selective etch of silicon nitride
|
US8951429B1
(en)
|
2013-10-29 |
2015-02-10 |
Applied Materials, Inc. |
Tungsten oxide processing
|
US9576809B2
(en)
|
2013-11-04 |
2017-02-21 |
Applied Materials, Inc. |
Etch suppression with germanium
|
US9236265B2
(en)
|
2013-11-04 |
2016-01-12 |
Applied Materials, Inc. |
Silicon germanium processing
|
US9520303B2
(en)
|
2013-11-12 |
2016-12-13 |
Applied Materials, Inc. |
Aluminum selective etch
|
US9245762B2
(en)
|
2013-12-02 |
2016-01-26 |
Applied Materials, Inc. |
Procedure for etch rate consistency
|
US9117855B2
(en)
|
2013-12-04 |
2015-08-25 |
Applied Materials, Inc. |
Polarity control for remote plasma
|
US9263278B2
(en)
|
2013-12-17 |
2016-02-16 |
Applied Materials, Inc. |
Dopant etch selectivity control
|
US9287095B2
(en)
|
2013-12-17 |
2016-03-15 |
Applied Materials, Inc. |
Semiconductor system assemblies and methods of operation
|
US9190293B2
(en)
|
2013-12-18 |
2015-11-17 |
Applied Materials, Inc. |
Even tungsten etch for high aspect ratio trenches
|
US9324606B2
(en)
*
|
2014-01-09 |
2016-04-26 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Self-aligned repairing process for barrier layer
|
US9287134B2
(en)
|
2014-01-17 |
2016-03-15 |
Applied Materials, Inc. |
Titanium oxide etch
|
US9293568B2
(en)
|
2014-01-27 |
2016-03-22 |
Applied Materials, Inc. |
Method of fin patterning
|
US9396989B2
(en)
|
2014-01-27 |
2016-07-19 |
Applied Materials, Inc. |
Air gaps between copper lines
|
US9385028B2
(en)
|
2014-02-03 |
2016-07-05 |
Applied Materials, Inc. |
Air gap process
|
US9499898B2
(en)
|
2014-03-03 |
2016-11-22 |
Applied Materials, Inc. |
Layered thin film heater and method of fabrication
|
US9299575B2
(en)
|
2014-03-17 |
2016-03-29 |
Applied Materials, Inc. |
Gas-phase tungsten etch
|
US9299537B2
(en)
|
2014-03-20 |
2016-03-29 |
Applied Materials, Inc. |
Radial waveguide systems and methods for post-match control of microwaves
|
US9299538B2
(en)
|
2014-03-20 |
2016-03-29 |
Applied Materials, Inc. |
Radial waveguide systems and methods for post-match control of microwaves
|
US9136273B1
(en)
|
2014-03-21 |
2015-09-15 |
Applied Materials, Inc. |
Flash gate air gap
|
US9903020B2
(en)
|
2014-03-31 |
2018-02-27 |
Applied Materials, Inc. |
Generation of compact alumina passivation layers on aluminum plasma equipment components
|
US9269590B2
(en)
|
2014-04-07 |
2016-02-23 |
Applied Materials, Inc. |
Spacer formation
|
US9309598B2
(en)
|
2014-05-28 |
2016-04-12 |
Applied Materials, Inc. |
Oxide and metal removal
|
US9847289B2
(en)
|
2014-05-30 |
2017-12-19 |
Applied Materials, Inc. |
Protective via cap for improved interconnect performance
|
US9406523B2
(en)
|
2014-06-19 |
2016-08-02 |
Applied Materials, Inc. |
Highly selective doped oxide removal method
|
US9378969B2
(en)
|
2014-06-19 |
2016-06-28 |
Applied Materials, Inc. |
Low temperature gas-phase carbon removal
|
US9425058B2
(en)
|
2014-07-24 |
2016-08-23 |
Applied Materials, Inc. |
Simplified litho-etch-litho-etch process
|
US9496167B2
(en)
|
2014-07-31 |
2016-11-15 |
Applied Materials, Inc. |
Integrated bit-line airgap formation and gate stack post clean
|
US9378978B2
(en)
|
2014-07-31 |
2016-06-28 |
Applied Materials, Inc. |
Integrated oxide recess and floating gate fin trimming
|
US9159606B1
(en)
|
2014-07-31 |
2015-10-13 |
Applied Materials, Inc. |
Metal air gap
|
US9165786B1
(en)
|
2014-08-05 |
2015-10-20 |
Applied Materials, Inc. |
Integrated oxide and nitride recess for better channel contact in 3D architectures
|
US9659753B2
(en)
|
2014-08-07 |
2017-05-23 |
Applied Materials, Inc. |
Grooved insulator to reduce leakage current
|
US9553102B2
(en)
|
2014-08-19 |
2017-01-24 |
Applied Materials, Inc. |
Tungsten separation
|
US9355856B2
(en)
|
2014-09-12 |
2016-05-31 |
Applied Materials, Inc. |
V trench dry etch
|
US9368364B2
(en)
|
2014-09-24 |
2016-06-14 |
Applied Materials, Inc. |
Silicon etch process with tunable selectivity to SiO2 and other materials
|
US9478434B2
(en)
|
2014-09-24 |
2016-10-25 |
Applied Materials, Inc. |
Chlorine-based hardmask removal
|
US9613822B2
(en)
|
2014-09-25 |
2017-04-04 |
Applied Materials, Inc. |
Oxide etch selectivity enhancement
|
US9966240B2
(en)
|
2014-10-14 |
2018-05-08 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning assessment in plasma processing equipment
|
US9355922B2
(en)
|
2014-10-14 |
2016-05-31 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning in plasma processing equipment
|
US11637002B2
(en)
|
2014-11-26 |
2023-04-25 |
Applied Materials, Inc. |
Methods and systems to enhance process uniformity
|
US9299583B1
(en)
|
2014-12-05 |
2016-03-29 |
Applied Materials, Inc. |
Aluminum oxide selective etch
|
US10224210B2
(en)
|
2014-12-09 |
2019-03-05 |
Applied Materials, Inc. |
Plasma processing system with direct outlet toroidal plasma source
|
US10573496B2
(en)
|
2014-12-09 |
2020-02-25 |
Applied Materials, Inc. |
Direct outlet toroidal plasma source
|
US9502258B2
(en)
|
2014-12-23 |
2016-11-22 |
Applied Materials, Inc. |
Anisotropic gap etch
|
US9343272B1
(en)
|
2015-01-08 |
2016-05-17 |
Applied Materials, Inc. |
Self-aligned process
|
US11257693B2
(en)
|
2015-01-09 |
2022-02-22 |
Applied Materials, Inc. |
Methods and systems to improve pedestal temperature control
|
US9373522B1
(en)
|
2015-01-22 |
2016-06-21 |
Applied Mateials, Inc. |
Titanium nitride removal
|
US9449846B2
(en)
|
2015-01-28 |
2016-09-20 |
Applied Materials, Inc. |
Vertical gate separation
|
US9728437B2
(en)
|
2015-02-03 |
2017-08-08 |
Applied Materials, Inc. |
High temperature chuck for plasma processing systems
|
US20160225652A1
(en)
|
2015-02-03 |
2016-08-04 |
Applied Materials, Inc. |
Low temperature chuck for plasma processing systems
|
US9881805B2
(en)
|
2015-03-02 |
2018-01-30 |
Applied Materials, Inc. |
Silicon selective removal
|
US9691645B2
(en)
|
2015-08-06 |
2017-06-27 |
Applied Materials, Inc. |
Bolted wafer chuck thermal management systems and methods for wafer processing systems
|
US9741593B2
(en)
|
2015-08-06 |
2017-08-22 |
Applied Materials, Inc. |
Thermal management systems and methods for wafer processing systems
|
US9349605B1
(en)
|
2015-08-07 |
2016-05-24 |
Applied Materials, Inc. |
Oxide etch selectivity systems and methods
|
US10504700B2
(en)
|
2015-08-27 |
2019-12-10 |
Applied Materials, Inc. |
Plasma etching systems and methods with secondary plasma injection
|
US10522371B2
(en)
|
2016-05-19 |
2019-12-31 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
US10504754B2
(en)
|
2016-05-19 |
2019-12-10 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
US9865484B1
(en)
|
2016-06-29 |
2018-01-09 |
Applied Materials, Inc. |
Selective etch using material modification and RF pulsing
|
US10629473B2
(en)
|
2016-09-09 |
2020-04-21 |
Applied Materials, Inc. |
Footing removal for nitride spacer
|
US10062575B2
(en)
|
2016-09-09 |
2018-08-28 |
Applied Materials, Inc. |
Poly directional etch by oxidation
|
US9721789B1
(en)
|
2016-10-04 |
2017-08-01 |
Applied Materials, Inc. |
Saving ion-damaged spacers
|
US9934942B1
(en)
|
2016-10-04 |
2018-04-03 |
Applied Materials, Inc. |
Chamber with flow-through source
|
US10062585B2
(en)
|
2016-10-04 |
2018-08-28 |
Applied Materials, Inc. |
Oxygen compatible plasma source
|
US10546729B2
(en)
|
2016-10-04 |
2020-01-28 |
Applied Materials, Inc. |
Dual-channel showerhead with improved profile
|
US10062579B2
(en)
|
2016-10-07 |
2018-08-28 |
Applied Materials, Inc. |
Selective SiN lateral recess
|
US9947549B1
(en)
|
2016-10-10 |
2018-04-17 |
Applied Materials, Inc. |
Cobalt-containing material removal
|
US10163696B2
(en)
|
2016-11-11 |
2018-12-25 |
Applied Materials, Inc. |
Selective cobalt removal for bottom up gapfill
|
US9768034B1
(en)
|
2016-11-11 |
2017-09-19 |
Applied Materials, Inc. |
Removal methods for high aspect ratio structures
|
US10242908B2
(en)
|
2016-11-14 |
2019-03-26 |
Applied Materials, Inc. |
Airgap formation with damage-free copper
|
US10026621B2
(en)
|
2016-11-14 |
2018-07-17 |
Applied Materials, Inc. |
SiN spacer profile patterning
|
EP3555347B1
(en)
*
|
2016-12-16 |
2023-08-02 |
Topsoe A/S |
Deposition of a coating on an interconnect for solid oxide cell stacks
|
US10566206B2
(en)
|
2016-12-27 |
2020-02-18 |
Applied Materials, Inc. |
Systems and methods for anisotropic material breakthrough
|
US10431429B2
(en)
|
2017-02-03 |
2019-10-01 |
Applied Materials, Inc. |
Systems and methods for radial and azimuthal control of plasma uniformity
|
US10403507B2
(en)
|
2017-02-03 |
2019-09-03 |
Applied Materials, Inc. |
Shaped etch profile with oxidation
|
US10043684B1
(en)
|
2017-02-06 |
2018-08-07 |
Applied Materials, Inc. |
Self-limiting atomic thermal etching systems and methods
|
US10319739B2
(en)
|
2017-02-08 |
2019-06-11 |
Applied Materials, Inc. |
Accommodating imperfectly aligned memory holes
|
US10943834B2
(en)
|
2017-03-13 |
2021-03-09 |
Applied Materials, Inc. |
Replacement contact process
|
US10319649B2
(en)
|
2017-04-11 |
2019-06-11 |
Applied Materials, Inc. |
Optical emission spectroscopy (OES) for remote plasma monitoring
|
US11276559B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Semiconductor processing chamber for multiple precursor flow
|
US11276590B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Multi-zone semiconductor substrate supports
|
US10049891B1
(en)
|
2017-05-31 |
2018-08-14 |
Applied Materials, Inc. |
Selective in situ cobalt residue removal
|
US10497579B2
(en)
|
2017-05-31 |
2019-12-03 |
Applied Materials, Inc. |
Water-free etching methods
|
US10920320B2
(en)
|
2017-06-16 |
2021-02-16 |
Applied Materials, Inc. |
Plasma health determination in semiconductor substrate processing reactors
|
US10541246B2
(en)
|
2017-06-26 |
2020-01-21 |
Applied Materials, Inc. |
3D flash memory cells which discourage cross-cell electrical tunneling
|
US10727080B2
(en)
|
2017-07-07 |
2020-07-28 |
Applied Materials, Inc. |
Tantalum-containing material removal
|
US10541184B2
(en)
|
2017-07-11 |
2020-01-21 |
Applied Materials, Inc. |
Optical emission spectroscopic techniques for monitoring etching
|
US10354889B2
(en)
|
2017-07-17 |
2019-07-16 |
Applied Materials, Inc. |
Non-halogen etching of silicon-containing materials
|
US10170336B1
(en)
|
2017-08-04 |
2019-01-01 |
Applied Materials, Inc. |
Methods for anisotropic control of selective silicon removal
|
US10043674B1
(en)
|
2017-08-04 |
2018-08-07 |
Applied Materials, Inc. |
Germanium etching systems and methods
|
DE102017213631A1
(en)
*
|
2017-08-07 |
2019-02-07 |
Robert Bosch Gmbh |
Micromechanical device and corresponding manufacturing method
|
US10297458B2
(en)
|
2017-08-07 |
2019-05-21 |
Applied Materials, Inc. |
Process window widening using coated parts in plasma etch processes
|
US10128086B1
(en)
|
2017-10-24 |
2018-11-13 |
Applied Materials, Inc. |
Silicon pretreatment for nitride removal
|
US10283324B1
(en)
|
2017-10-24 |
2019-05-07 |
Applied Materials, Inc. |
Oxygen treatment for nitride etching
|
US10256112B1
(en)
|
2017-12-08 |
2019-04-09 |
Applied Materials, Inc. |
Selective tungsten removal
|
US10903054B2
(en)
|
2017-12-19 |
2021-01-26 |
Applied Materials, Inc. |
Multi-zone gas distribution systems and methods
|
US11328909B2
(en)
|
2017-12-22 |
2022-05-10 |
Applied Materials, Inc. |
Chamber conditioning and removal processes
|
US10854426B2
(en)
|
2018-01-08 |
2020-12-01 |
Applied Materials, Inc. |
Metal recess for semiconductor structures
|
US10964512B2
(en)
|
2018-02-15 |
2021-03-30 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus and methods
|
US10679870B2
(en)
|
2018-02-15 |
2020-06-09 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus
|
TWI716818B
(en)
|
2018-02-28 |
2021-01-21 |
美商應用材料股份有限公司 |
Systems and methods to form airgaps
|
US10593560B2
(en)
|
2018-03-01 |
2020-03-17 |
Applied Materials, Inc. |
Magnetic induction plasma source for semiconductor processes and equipment
|
US10319600B1
(en)
|
2018-03-12 |
2019-06-11 |
Applied Materials, Inc. |
Thermal silicon etch
|
US10497573B2
(en)
|
2018-03-13 |
2019-12-03 |
Applied Materials, Inc. |
Selective atomic layer etching of semiconductor materials
|
US10573527B2
(en)
|
2018-04-06 |
2020-02-25 |
Applied Materials, Inc. |
Gas-phase selective etching systems and methods
|
US10490406B2
(en)
|
2018-04-10 |
2019-11-26 |
Appled Materials, Inc. |
Systems and methods for material breakthrough
|
US10699879B2
(en)
|
2018-04-17 |
2020-06-30 |
Applied Materials, Inc. |
Two piece electrode assembly with gap for plasma control
|
US10886137B2
(en)
|
2018-04-30 |
2021-01-05 |
Applied Materials, Inc. |
Selective nitride removal
|
US10755941B2
(en)
|
2018-07-06 |
2020-08-25 |
Applied Materials, Inc. |
Self-limiting selective etching systems and methods
|
US10872778B2
(en)
|
2018-07-06 |
2020-12-22 |
Applied Materials, Inc. |
Systems and methods utilizing solid-phase etchants
|
US10672642B2
(en)
|
2018-07-24 |
2020-06-02 |
Applied Materials, Inc. |
Systems and methods for pedestal configuration
|
US10892198B2
(en)
|
2018-09-14 |
2021-01-12 |
Applied Materials, Inc. |
Systems and methods for improved performance in semiconductor processing
|
US11049755B2
(en)
|
2018-09-14 |
2021-06-29 |
Applied Materials, Inc. |
Semiconductor substrate supports with embedded RF shield
|
US11062887B2
(en)
|
2018-09-17 |
2021-07-13 |
Applied Materials, Inc. |
High temperature RF heater pedestals
|
US11417534B2
(en)
|
2018-09-21 |
2022-08-16 |
Applied Materials, Inc. |
Selective material removal
|
US11682560B2
(en)
|
2018-10-11 |
2023-06-20 |
Applied Materials, Inc. |
Systems and methods for hafnium-containing film removal
|
US11121002B2
(en)
|
2018-10-24 |
2021-09-14 |
Applied Materials, Inc. |
Systems and methods for etching metals and metal derivatives
|
US11437242B2
(en)
|
2018-11-27 |
2022-09-06 |
Applied Materials, Inc. |
Selective removal of silicon-containing materials
|
US11721527B2
(en)
|
2019-01-07 |
2023-08-08 |
Applied Materials, Inc. |
Processing chamber mixing systems
|
US10920319B2
(en)
|
2019-01-11 |
2021-02-16 |
Applied Materials, Inc. |
Ceramic showerheads with conductive electrodes
|
CN110528041A
(en)
*
|
2019-08-13 |
2019-12-03 |
广州兴森快捷电路科技有限公司 |
For the electroplating processing method of wafer, wafer and wiring board
|
CN113299598A
(en)
*
|
2020-02-24 |
2021-08-24 |
长鑫存储技术有限公司 |
Semiconductor structure manufacturing method
|
US20220165852A1
(en)
*
|
2020-11-23 |
2022-05-26 |
Applied Materials, Inc. |
Methods and apparatus for metal fill in metal gate stack
|