CN110528041A - For the electroplating processing method of wafer, wafer and wiring board - Google Patents
For the electroplating processing method of wafer, wafer and wiring board Download PDFInfo
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- CN110528041A CN110528041A CN201910743246.0A CN201910743246A CN110528041A CN 110528041 A CN110528041 A CN 110528041A CN 201910743246 A CN201910743246 A CN 201910743246A CN 110528041 A CN110528041 A CN 110528041A
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- wafer
- jig
- plating
- processing method
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a kind of electroplating processing methods for the electroplating processing method of wafer, wafer and wiring board, for wafer, comprising the following steps: plating trenches are processed on jig；Wafer material material to be processed is fixed on plating trenches；Jig is placed in electroplate liquid, is located at wafer material material in electroplate liquid；It is powered to jig, completes the electroplating operations to wafer material material and obtains wafer finished product；Wafer carries out plating processing using the electroplating processing method for being previously described for wafer；Wiring board includes wafer above-mentioned.Plating trenches are opened up on jig, for installing wafer material material, later, jig is placed in electroplate liquid, after jig is powered, electric current arrives first at plating trenches by jig, groove-like structure is more uniform when making wafer material material of the electric current in arrival slot, keeps the electric current for reaching each position of wafer material material relatively also more uniform, when plating, the copper facing at each position of wafer material material is also more balanced, promotes the processing quality of wafer finished product.
Description
Technical field
The present invention relates to wiring board processing technique fields, more particularly to a kind of electroplating processing method for wafer, crystalline substance
Member and wiring board.
Background technique
Wafer is also referred to as wafer, refers to the silicon wafer used when silicon semiconductor integrated circuit is made, due to its shape
For circle, therefore referred to as wafer；Processing and fabricating goes out various circuit component structures on silicon, and becoming has specific electrical functionality
IC products.
With constantly progressing greatly for end product efficiency, the intelligent device of high-order is gradually using 28nm first system below
Journey.Since advanced process is from 28nm evolution to 10nm hereinafter, leading to wafer foot column pitch also continuous miniature, matching multilayer
Organic substrate machining accuracy also has higher requirement.Therefore, a kind of wiring layer technology again has been derived, it need to be in wafer surface
Carry out plating Copper fabrication.In general, wafer is placed on jig, jig is plated equipment clamping, and electric current is passed through retaining part
It is transferred on jig, to carry out electroplating operations to wafer.However, this mode plating when, the electric current of wafer different parts
Strength difference is big, and the copper thickness ununiformity after causing wafer to be electroplated is even, seriously affects the processing quality of wafer.
Summary of the invention
Based on this, it is necessary to provide a kind of for the electroplating processing method of wafer, wafer and wiring board；This is for wafer
Electroplating processing method plating is uniform；The plating processing of the wafer is added using the electroplating processing method for being previously described for wafer
Work；The wiring board includes wafer above-mentioned.
Its technical solution is as follows:
On the one hand, a kind of electroplating processing method for wafer is provided, comprising the following steps:
Plating trenches are processed on jig；
Wafer material material to be processed is fixed on plating trenches；
Jig is placed in electroplate liquid, is located at wafer material material in electroplate liquid；
It is powered to jig, completes the electroplating operations to wafer material material and obtains wafer finished product.
The above-mentioned electroplating processing method for wafer, opens up plating trenches on jig, to be used to install wafer material material, it
Afterwards, jig is placed in electroplate liquid, after jig is powered, electric current arrives first at plating trenches by jig, and groove-like structure makes electricity
Flow it is more uniform when wafer material material in arrival slot, to make to reach the electric current at each position of wafer material material relatively also more
Even, when plating, the copper facing at each position of wafer material material is also more balanced, keeps copper thickness more uniform, promotes the processed goods of wafer finished product
Matter.
Technical solution is illustrated further below:
Further, the step of wafer material material to be processed being fixed on plating trenches include:
Between the annular groove wall at edge and plating trenches that wafer material material is placed in plating trenches to, is made wafer material material is in presetting
Away from setting；
Wafer material material is fixed in plating trenches using conductive fixing piece.
Further, spacing is 1mm-3mm between the edge of wafer material material and the annular groove wall of plating trenches.
Further, fixing piece is conductive adhesive tape；Or fixing piece is for fixing wafer material material, conductive folder
Tool or snap ring.
Further, jig is equipped with conductive part, and jig is placed in electroplate liquid, wafer material material is made to be located at the step in electroplate liquid
In, the conductive part and electroplating device of jig cooperate, so that jig can be powered and be located at wafer material material in electroplate liquid.
Further, conductive part is equipped at least two and is arranged in the side of jig in line-styled；
Or conductive part is equipped with periphery multiple and that plating trenches are arranged in spacing.
Further, further comprising the steps of before the step of wafer material material to be processed is fixed on plating trenches:
Conductive part is processed on jig.
Further, conductive part is holding holes.
On the other hand, a kind of wafer is additionally provided, wafer is used for wafer using as described in any one above-mentioned technical solution
Electroplating processing method carry out plating processing.
Above-mentioned wafer carries out plating processing, the processing of wafer finished product using the electroplating processing method for being previously described for wafer
Quality is more preferable.
In addition, additionally providing a kind of wiring board, including wafer above-mentioned.
The wiring board uses wafer above-mentioned, since the processing quality of wafer is more preferable, to improve the entirety of wiring board
Quality.
Detailed description of the invention
Fig. 1 is the flow chart in embodiment for the electroplating processing method of wafer；
Fig. 2 is jig overall structure top view used in Fig. 1 embodiment；
Fig. 3 is the overall structure sectional view of Fig. 2 embodiment.
Attached drawing mark explanation:
100, jig；110, plating trenches；120, holding holes；200, wafer material material.
Specific embodiment
The embodiment of the present invention is described in detail with reference to the accompanying drawing:
It should be noted that it can be directly in another element when alleged element is with another element " fixation " in text
Above or there may also be elements placed in the middle.When an element is considered as with another element " connection ", it be can be directly
It is connected to another element in succession or may be simultaneously present centering elements.On the contrary, when element is referred to as " directly existing " another element
When "upper", intermediary element is not present.Term as used herein "vertical", "horizontal", "left" and "right" and similar table
It states for illustrative purposes only, is not meant to be the only embodiment.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more
Any and all combinations of relevant listed item.
Please refer to Fig. 1 to Fig. 3, a kind of electroplating processing method for wafer, comprising the following steps:
Plating trenches 110 are processed on jig 100；
Wafer material material 200 to be processed is fixed on plating trenches 110；
Jig 100 is placed in electroplate liquid, is located at wafer material material 200 in electroplate liquid；
It is powered to jig 100, completes the electroplating operations to wafer material material 200 and obtains wafer finished product.
This is used for the electroplating processing method of wafer, and plating trenches 110 are opened up on jig 100, for installing wafer material
Jig 100 is placed in electroplate liquid by material 200 later, and after jig 100 is powered, electric current arrives first at plating by jig 100
Groove 110, groove-like structure are more uniform when making wafer material material 200 of the electric current in arrival slot, to make to reach wafer material material 200
The electric current at each position is relatively also more uniform, and when plating, the copper facing at each position of wafer material material 200 is also more balanced, makes copper thickness more
Add uniformly, promotes the processing quality of wafer finished product.
The electroplating processing method for being used for wafer can be applied in the plating Copper fabrication of wafer, so that wafer material material 200
Copper facing it is more uniform, the copper thickness uniformity of the wafer finished product promoted.
Conventional circuit board electroplating Copper fabrication method can not be suitable for the plating Copper fabrication of wafer, and main problem is:
One, wafer material is more crisp, is easy breakage using electroplating clamp is fixed, and plating folder spot size is big, easily enters wafer
Graphics field, to influence copper facing precision；
Two, it being directly electroplated in process using plating folder solid point timing, electric current is transmitted to wafer surface by pressing from both sides point,
Electric current near the case where being easy to appear current distribution is uneven, such as folder point is stronger, and the electric current in other regions is weaker, so as to cause
The copper thickness ununiformity of plating is even.
In the present embodiment, after electric current enters jig 100, since jig 100 is conductive, (jig 100, which can have, is capable of conduction
Metal material is made), thus charge entire jig 100, and electric current passes through electricity before reaching wafer material material 200
Plating groove 110 makes electric current reach relatively steady in groove, so as to the relatively uniform each portion for reaching wafer material material 200
Position, so that the copper thickness after plating is more uniform.
Further, the shape of plating trenches 110 and the shape of wafer material material 200 are correspondingly arranged, the depth of plating trenches 110
It spends and is correspondingly arranged with the thickness of wafer material material 200.
In Fig. 2 and Fig. 3, the rounded setting of plating trenches 110, with corresponding with the shape of circular wafer material material 200；Electricity
Plate groove 110 depth it is corresponding with the thickness of wafer material material 200 so that wafer material material 200 be fixed on plating trenches 110 it
Afterwards, the upper plane of wafer material material 200 and the upper plane of jig 100 are suitable；In addition, the slot bottom of plating trenches 110 is arranged in plane.
The setting as shown in Fig. 2, jig 100 is square, plating trenches 110 are set to the middle part of jig 100.
Further, the step of wafer material material 200 to be processed being fixed on plating trenches 110 include:
Wafer material material 200 is placed in plating trenches 110 to, is made the edge and plating trenches 110 of the wafer material material 200
Annular groove wall is in default spacing setting；
Wafer material material 200 is fixed in plating trenches 110 using conductive fixing piece.
After wafer material material 200 is placed in plating trenches 110, using conductive fixing piece by wafer material material 200
It is fixed in plating trenches 110, is slipped in the plating process to avoid wafer material material 200 or mobile, the copper after influencing plating
Thick uniformity.
Fixing piece can be the fixture or non-clamp structure that can be fixed on wafer material material 200 in plating trenches 110, this
Field technical staff can select as needed, repeat no more.
Further, spacing is 1mm-3mm between the edge of wafer material material 200 and the annular groove wall of plating trenches 110.
Referring to figure 2. and Fig. 3, in default spacing between the outer ring of wafer material material 200 and the annular groove wall of plating trenches 110
Then setting recycles fixing piece that wafer material material 200 is fixed so that wafer material material 200 to be placed in plating trenches 110 in advance
In plating trenches 110.
The big 1mm-3mm of radius of the radius ratio wafer material material 200 of plating trenches 110, so set, making to place more just
Victory, and avoid the problems such as groove is because of machining accuracy and the not corresponding feelings for causing to damage wafer material material 200 of the shape of wafer material material 200
Condition occurs.
Specifically, the big 2mm of radius of the radius ratio wafer material material 200 of plating trenches 110.
Further, fixing piece is conductive adhesive tape.Conductive adhesive tape fixation is simple and convenient, can not only meet solid
Fixed needs, and it is low in cost.
Certainly, fixing piece is also possible to for fixing wafer material material 200, conductive fixture or snap ring.Fixture or card
Ring is used equally for fixed wafer material material 200, and those skilled in the art can specifically select, to meet actual needs, here no longer
It repeats.
Further, jig 100 is equipped with conductive part, and jig 100 is placed in electroplate liquid, wafer material material 200 is made to be located at plating
In step in liquid, the conductive part and electroplating device of jig 100 cooperate, so that jig 100 can be powered and make wafer material material
200 are located in electroplate liquid.
Of both conductive part plays the role of: on the one hand, cooperating, with electroplating device to carry out conduction, and electric current is passed through
Jig 100 is introduced into wafer material material 200, carries out electroplating operations；On the other hand, cooperate with electroplating device, to pass through the conductive part
Entire jig 100 is supported in electroplate liquid, is repeated no more.
Referring to figure 2., conductive part is equipped at least two and is arranged in the side of jig 100 in line-styled.
It there are four conductive part is set and is in setting in one line in Fig. 2.After conductive part and electroplating device cooperation, electricity
The case where coating apparatus starting, electric current enters jig 100 by four conductive parts, compares only one conductive part, into jig 100
When jig 100 on electric current enter it is more uniform so that reach plating trenches 110 electric current also relatively further uniformly, mention
The copper thickness uniformity that subsequent plating operations obtain is risen.
Certainly, conductive part can also be equipped with periphery multiple and that plating trenches 110 are arranged in spacing.In the case of this kind,
Electric current enters jig 100 by surrounding, and the surrounding of the plating trenches 110 on jig 100 further enters plating trenches
110, compare the electric current at each position of plating trenches 110 more uniform, so that electric current exists in the plating Copper fabrication of wafer material material 200
Each position of wafer material material 200 flows into uniformly, promotes the uniformity of copper thickness after plating.
Further, before the step of wafer material material 200 to be processed is fixed on plating trenches 110, further include with
Lower step:
Conductive part is processed on jig 100.
Specifically, conductive part is holding holes 120.120 position of holding holes, which not only acts as, leads the electric current of electroplating device
The effect for entering jig 100 is also acted as with electroplating device cooperation, with the effect of fixed and support jig 100, is repeated no more.
Each step in the present embodiment in the specific implementation, can carry out successive exchange or synchronization according to the actual needs
Operation, as long as can be realized the electroplating operations to wafer, repeats no more.
The present embodiment also provides a kind of wafer, and wafer is using the plating for wafer as described in any one above-mentioned embodiment
Processing method carries out plating processing.
The wafer carries out plating processing, the processed goods of wafer finished product using the electroplating processing method for being previously described for wafer
Matter is more preferable.
In addition, the present embodiment also provides a kind of wiring board, including wafer above-mentioned.The wiring board uses wafer above-mentioned,
Since the processing quality of wafer is more preferable, to improve the overall quality of wiring board.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of electroplating processing method for wafer, which comprises the following steps:
Plating trenches are processed on jig；
Wafer material material to be processed is fixed on the plating trenches；
The jig is placed in electroplate liquid, is located at the wafer material material in the electroplate liquid；
It is powered to the jig, completes the electroplating operations to the wafer material material and obtains wafer finished product.
2. the electroplating processing method according to claim 1 for wafer, which is characterized in that by wafer material material to be processed
The step of being fixed on the plating trenches include:
The wafer material material is placed in the plating trenches, makes the edge of the wafer material material and the annular of the plating trenches
Cell wall is in default spacing setting；
The wafer material material is fixed in the plating trenches using conductive fixing piece.
3. the electroplating processing method according to claim 2 for wafer, which is characterized in that the edge of the wafer material material
Spacing is 1mm-3mm between the annular groove wall of the plating trenches.
4. the electroplating processing method according to claim 2 for wafer, which is characterized in that the fixing piece is electrically conductive
Adhesive tape；Or the fixing piece is for fixing the wafer material material, conductive fixture or snap ring.
5. the electroplating processing method according to claim 1-4 for wafer, which is characterized in that the jig is set
There is conductive part, the jig is placed in electroplate liquid, is located at the wafer material material in the step in the electroplate liquid, the jig
The conductive part and electroplating device cooperation, so that the jig can be powered and the wafer material material is made to be located at the plating
In liquid.
6. the electroplating processing method according to claim 5 for wafer, which is characterized in that the conductive part is equipped at least
Two and the side of the jig is arranged in line-styled；
Or the conductive part is equipped with periphery multiple and that the plating trenches are arranged in spacing.
7. the electroplating processing method according to claim 5 for wafer, which is characterized in that by wafer material to be processed
Material was fixed on before the step of plating trenches, further comprising the steps of:
The conductive part is processed on the jig.
8. the electroplating processing method according to claim 5 for wafer, which is characterized in that the conductive part is clamping
Hole.
9. a kind of wafer, which is characterized in that the wafer uses such as the described in any item plating for wafer of claim 1-8
Processing method carries out plating processing.
10. a kind of wiring board, which is characterized in that including wafer as claimed in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910743246.0A CN110528041A (en) | 2019-08-13 | 2019-08-13 | For the electroplating processing method of wafer, wafer and wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910743246.0A CN110528041A (en) | 2019-08-13 | 2019-08-13 | For the electroplating processing method of wafer, wafer and wiring board |
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Family
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