JP2003204067A - 表示装置およびそれを用いた電子機器 - Google Patents

表示装置およびそれを用いた電子機器

Info

Publication number
JP2003204067A
JP2003204067A JP2001402103A JP2001402103A JP2003204067A JP 2003204067 A JP2003204067 A JP 2003204067A JP 2001402103 A JP2001402103 A JP 2001402103A JP 2001402103 A JP2001402103 A JP 2001402103A JP 2003204067 A JP2003204067 A JP 2003204067A
Authority
JP
Japan
Prior art keywords
display device
substrate
thin film
film transistor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001402103A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003204067A5 (enExample
Inventor
Jun Koyama
潤 小山
Atsuo Isobe
敦生 磯部
Hiroshi Shibata
寛 柴田
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001402103A priority Critical patent/JP2003204067A/ja
Priority to US10/329,993 priority patent/US7312473B2/en
Publication of JP2003204067A publication Critical patent/JP2003204067A/ja
Publication of JP2003204067A5 publication Critical patent/JP2003204067A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
JP2001402103A 2001-12-28 2001-12-28 表示装置およびそれを用いた電子機器 Withdrawn JP2003204067A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001402103A JP2003204067A (ja) 2001-12-28 2001-12-28 表示装置およびそれを用いた電子機器
US10/329,993 US7312473B2 (en) 2001-12-28 2002-12-27 Display device and electronic device using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001402103A JP2003204067A (ja) 2001-12-28 2001-12-28 表示装置およびそれを用いた電子機器

Publications (2)

Publication Number Publication Date
JP2003204067A true JP2003204067A (ja) 2003-07-18
JP2003204067A5 JP2003204067A5 (enExample) 2005-08-04

Family

ID=27640446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001402103A Withdrawn JP2003204067A (ja) 2001-12-28 2001-12-28 表示装置およびそれを用いた電子機器

Country Status (2)

Country Link
US (1) US7312473B2 (enExample)
JP (1) JP2003204067A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7312568B2 (en) 2003-12-29 2007-12-25 Lg.Philips Lcd Co., Ltd. Organic electro luminescence device having TFT with protrusions

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7546298B2 (en) * 2001-01-09 2009-06-09 Nextair Corporation Software, devices and methods facilitating execution of server-side applications at mobile devices
US6897477B2 (en) * 2001-06-01 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device
JP3899886B2 (ja) 2001-10-10 2007-03-28 株式会社日立製作所 画像表示装置
US6933527B2 (en) 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
JP2003204067A (ja) 2001-12-28 2003-07-18 Semiconductor Energy Lab Co Ltd 表示装置およびそれを用いた電子機器
JP4011344B2 (ja) 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1326273B1 (en) 2001-12-28 2012-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6841797B2 (en) * 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
JP4137460B2 (ja) * 2002-02-08 2008-08-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6884668B2 (en) * 2002-02-22 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US6847050B2 (en) * 2002-03-15 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device comprising the same
US6875998B2 (en) * 2002-03-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method of manufacturing the same, and method of designing the same
US6930326B2 (en) * 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
JP2003332350A (ja) * 2002-05-17 2003-11-21 Hitachi Ltd 薄膜半導体装置
KR100543478B1 (ko) * 2002-12-31 2006-01-20 엘지.필립스 엘시디 주식회사 유기전계 발광소자와 그 제조방법
JP4706168B2 (ja) * 2003-07-16 2011-06-22 ソニー株式会社 表示装置および表示読み取り装置
US7081774B2 (en) * 2003-07-30 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Circuit having source follower and semiconductor device having the circuit
US7199397B2 (en) * 2004-05-05 2007-04-03 Au Optronics Corporation AMOLED circuit layout
KR100636503B1 (ko) * 2004-06-25 2006-10-18 삼성에스디아이 주식회사 발광 표시장치와 그의 제조방법
KR100611886B1 (ko) * 2004-06-25 2006-08-11 삼성에스디아이 주식회사 개량된 구조의 트랜지스터를 구비한 화소 회로 및 유기발광 표시장치
US7105855B2 (en) * 2004-09-20 2006-09-12 Eastman Kodak Company Providing driving current arrangement for OLED device
US7387954B2 (en) * 2004-10-04 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US7416924B2 (en) * 2004-11-11 2008-08-26 Samsung Electronics Co., Ltd. Organic light emitting display with single crystalline silicon TFT and method of fabricating the same
CN101694766A (zh) * 2005-05-02 2010-04-14 株式会社半导体能源研究所 发光器件、以及电子器具
KR100703033B1 (ko) * 2006-03-22 2007-04-09 삼성전자주식회사 반도체 장치 및 그 제조 방법
EP1857907B1 (en) * 2006-04-28 2009-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7791012B2 (en) * 2006-09-29 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes
JP2008252068A (ja) * 2007-03-08 2008-10-16 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US8354724B2 (en) * 2007-03-26 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP5371144B2 (ja) 2007-06-29 2013-12-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法、並びに電子機器
WO2009011019A1 (ja) * 2007-07-13 2009-01-22 Mitsubishi Electric Corporation 光送信器
US8048749B2 (en) * 2007-07-26 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7623560B2 (en) * 2007-09-27 2009-11-24 Ostendo Technologies, Inc. Quantum photonic imagers and methods of fabrication thereof
US8114468B2 (en) 2008-06-18 2012-02-14 Boise Technology, Inc. Methods of forming a non-volatile resistive oxide memory array
WO2010035608A1 (en) 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012256012A (ja) 2010-09-15 2012-12-27 Semiconductor Energy Lab Co Ltd 表示装置
CN102646594A (zh) * 2011-05-20 2012-08-22 京东方科技集团股份有限公司 一种esd电路的沟道及其制备方法
KR102103913B1 (ko) 2012-01-10 2020-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2014170686A (ja) * 2013-03-04 2014-09-18 Toshiba Corp 表示素子の製造方法、表示素子及び表示装置
JP2015202213A (ja) * 2014-04-14 2015-11-16 オリンパス株式会社 画像形成装置
US10615230B2 (en) 2017-11-08 2020-04-07 Teradyne, Inc. Identifying potentially-defective picture elements in an active-matrix display panel

Family Cites Families (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4330363A (en) 1980-08-28 1982-05-18 Xerox Corporation Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas
JPS61241909A (ja) 1985-04-19 1986-10-28 Agency Of Ind Science & Technol Ｓｏｉ結晶形成法
JPH0810668B2 (ja) 1985-10-31 1996-01-31 旭硝子株式会社 多結晶シリコン膜の製造方法
JPS6331108A (ja) 1986-07-25 1988-02-09 Citizen Watch Co Ltd Ｓｏｉ素子の製造方法
DE68909973T2 (de) 1988-03-18 1994-03-24 Seiko Epson Corp Dünnfilmtransistor.
US5163220A (en) 1991-10-09 1992-11-17 The Unites States Of America As Represented By The Secretary Of The Army Method of enhancing the electrical conductivity of indium-tin-oxide electrode stripes
NL194848C (nl) * 1992-06-01 2003-04-03 Samsung Electronics Co Ltd Vloeibaar-kristalindicatorinrichting.
JP3431647B2 (ja) 1992-10-30 2003-07-28 株式会社半導体エネルギー研究所 半導体装置とその作製方法およびメモリ装置の作製方法およびレーザードーピング処理方法
JPH06349735A (ja) 1993-06-12 1994-12-22 Semiconductor Energy Lab Co Ltd 半導体装置
DE69429394T2 (de) * 1993-08-25 2002-08-22 Kabushiki Kaisha Toshiba, Kawasaki Flüssigkristall-Anzeigevorrichtung und Verfahren zu ihrer Herstellung
TW264575B (enExample) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
JP3101178B2 (ja) 1994-04-22 2000-10-23 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置の駆動回路及びその製造方法
TW280037B (en) 1994-04-22 1996-07-01 Handotai Energy Kenkyusho Kk Drive circuit of active matrix type display device and manufacturing method
JP3326020B2 (ja) 1994-08-29 2002-09-17 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
TW395008B (en) 1994-08-29 2000-06-21 Semiconductor Energy Lab Semiconductor circuit for electro-optical device and method of manufacturing the same
JP3464287B2 (ja) 1994-09-05 2003-11-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5854803A (en) 1995-01-12 1998-12-29 Semiconductor Energy Laboratory Co., Ltd. Laser illumination system
JP3727034B2 (ja) 1995-01-13 2005-12-14 株式会社半導体エネルギー研究所 レーザー照射装置
JP3216861B2 (ja) 1995-04-10 2001-10-09 シャープ株式会社 多結晶シリコン膜の形成方法および薄膜トランジスタの製造方法
JPH0974205A (ja) 1995-09-04 1997-03-18 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及びその作製方法
JP3453972B2 (ja) 1995-12-27 2003-10-06 トヨタ自動車株式会社 レーザ溶接方法および装置
JPH09321310A (ja) 1996-05-31 1997-12-12 Sanyo Electric Co Ltd 半導体装置の製造方法
US5981974A (en) 1996-09-30 1999-11-09 Sharp Kabushiki Kaisha Semiconductor device and method for fabricating the same
JP3645377B2 (ja) 1996-10-24 2005-05-11 株式会社半導体エネルギー研究所 集積回路の作製方法
JP3597331B2 (ja) 1996-10-24 2004-12-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW451284B (en) 1996-10-15 2001-08-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3284899B2 (ja) 1996-10-17 2002-05-20 松下電器産業株式会社 半導体素子及びその製造方法
JPH10200114A (ja) 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 薄膜回路
KR100307385B1 (ko) 1997-03-05 2001-12-15 구본준, 론 위라하디락사 액정표시장치의구조및그제조방법
US6307214B1 (en) 1997-06-06 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
JP4566294B2 (ja) 1997-06-06 2010-10-20 株式会社半導体エネルギー研究所 連続粒界結晶シリコン膜、半導体装置
JP3754189B2 (ja) 1997-08-26 2006-03-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH1184418A (ja) 1997-09-08 1999-03-26 Sanyo Electric Co Ltd 表示装置
JPH11121753A (ja) 1997-10-14 1999-04-30 Hitachi Ltd 半導体装置及びその製造方法
JPH11177102A (ja) 1997-12-08 1999-07-02 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
EP1049144A4 (en) 1997-12-17 2006-12-06 Matsushita Electronics Corp THIN SEMICONDUCTOR LAYER, METHOD AND DEVICE THEREOF, SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING SAME
JP2000068520A (ja) 1997-12-17 2000-03-03 Matsushita Electric Ind Co Ltd 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法
JP3844613B2 (ja) 1998-04-28 2006-11-15 株式会社半導体エネルギー研究所 薄膜トランジスタ回路およびそれを用いた表示装置
JP2000003875A (ja) 1998-06-12 2000-01-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR100478577B1 (ko) * 1998-10-16 2005-03-28 세이코 엡슨 가부시키가이샤 전기 광학 장치의 구동회로 및 그 구동방법, ｄ/ａ컨버터, 신호선 구동회로, 전기 광학 패널, 투사형표시장치, 및 전자기기
JP2000223279A (ja) 1999-01-29 2000-08-11 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置
JP4403599B2 (ja) * 1999-04-19 2010-01-27 ソニー株式会社 半導体薄膜の結晶化方法、レーザ照射装置、薄膜トランジスタの製造方法及び表示装置の製造方法
US6512504B1 (en) 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
JP3777873B2 (ja) 1999-05-21 2006-05-24 セイコーエプソン株式会社 薄膜トランジスタ、アクティブマトリクス基板、電気光学装置及び電子機器
JP2000349296A (ja) 1999-06-08 2000-12-15 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4053691B2 (ja) 1999-06-29 2008-02-27 三井化学株式会社 ホスフィンオキシド化合物およびその製造方法
JP3897965B2 (ja) 1999-08-13 2007-03-28 株式会社半導体エネルギー研究所 レーザー装置及びレーザーアニール方法
TW487959B (en) 1999-08-13 2002-05-21 Semiconductor Energy Lab Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
JP3645755B2 (ja) 1999-09-17 2005-05-11 日本電気株式会社 薄膜トランジスタおよびその製造方法
US6410368B1 (en) * 1999-10-26 2002-06-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device with TFT
JP5408829B2 (ja) * 1999-12-28 2014-02-05 ゲットナー・ファンデーション・エルエルシー アクティブマトリックス基板の製造方法
US6747289B2 (en) 2000-04-27 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating thereof
JP5057613B2 (ja) 2000-04-27 2012-10-24 株式会社半導体エネルギー研究所 半導体装置及び電子機器
US7015882B2 (en) * 2000-11-07 2006-03-21 Sony Corporation Active matrix display and active matrix organic electroluminescence display
US6583440B2 (en) 2000-11-30 2003-06-24 Seiko Epson Corporation Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus
US6894674B2 (en) * 2000-12-06 2005-05-17 Sony Corporation Timing generation circuit for display apparatus and display apparatus incorporating the same
JP3950988B2 (ja) * 2000-12-15 2007-08-01 エルジー フィリップス エルシーディー カンパニー リミテッド アクティブマトリックス電界発光素子の駆動回路
JP2002324808A (ja) 2001-01-19 2002-11-08 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TWI221645B (en) 2001-01-19 2004-10-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US7115453B2 (en) 2001-01-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP4071005B2 (ja) 2001-01-29 2008-04-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4011344B2 (ja) 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003204067A (ja) 2001-12-28 2003-07-18 Semiconductor Energy Lab Co Ltd 表示装置およびそれを用いた電子機器
EP1326273B1 (en) * 2001-12-28 2012-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6933527B2 (en) 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
US6841797B2 (en) 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TW200302511A (en) 2002-01-28 2003-08-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
TWI261358B (en) 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP4137460B2 (ja) 2002-02-08 2008-08-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6884668B2 (en) 2002-02-22 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US6847050B2 (en) 2002-03-15 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device comprising the same
US6812491B2 (en) 2002-03-22 2004-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory cell and semiconductor memory device
US6841434B2 (en) 2002-03-26 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US6875998B2 (en) 2002-03-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method of manufacturing the same, and method of designing the same
US6906343B2 (en) * 2002-03-26 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US6930326B2 (en) 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7312568B2 (en) 2003-12-29 2007-12-25 Lg.Philips Lcd Co., Ltd. Organic electro luminescence device having TFT with protrusions

Also Published As

Publication number Publication date
US7312473B2 (en) 2007-12-25
US20030230750A1 (en) 2003-12-18

Similar Documents

Publication Publication Date Title
JP2003204067A (ja) 表示装置およびそれを用いた電子機器
JP6764502B2 (ja) 発光装置
JP6239684B2 (ja) 発光装置
KR100812286B1 (ko) Ｅｌ 표시장치 구동방법
KR101143900B1 (ko) 발광장치
JP4152603B2 (ja) 発光装置
KR100806234B1 (ko) 표시장치
JP3706107B2 (ja) 発光装置及び電子機器
JP2002032057A (ja) 発光装置及びその駆動方法
JP3939666B2 (ja) 発光装置及び電子機器
JP4490403B2 (ja) 発光装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041227

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041227

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20061215

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070123

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070314

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071016

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20071203