JP2003089864A - アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材 - Google Patents

アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材

Info

Publication number
JP2003089864A
JP2003089864A JP2001283306A JP2001283306A JP2003089864A JP 2003089864 A JP2003089864 A JP 2003089864A JP 2001283306 A JP2001283306 A JP 2001283306A JP 2001283306 A JP2001283306 A JP 2001283306A JP 2003089864 A JP2003089864 A JP 2003089864A
Authority
JP
Japan
Prior art keywords
thin film
aluminum alloy
alloy thin
aluminum
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001283306A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003089864A5 (enExample
Inventor
Takashi Kubota
高史 久保田
Hiroshi Watanabe
渡辺　　弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Kinzoku Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Priority to JP2001283306A priority Critical patent/JP2003089864A/ja
Priority to TW091118779A priority patent/TWI232240B/zh
Priority to CNB028032667A priority patent/CN100507068C/zh
Priority to US10/416,957 priority patent/US20040022664A1/en
Priority to PCT/JP2002/009331 priority patent/WO2003029510A1/ja
Priority to KR10-2003-7006447A priority patent/KR20030048141A/ko
Publication of JP2003089864A publication Critical patent/JP2003089864A/ja
Publication of JP2003089864A5 publication Critical patent/JP2003089864A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2001283306A 2001-09-18 2001-09-18 アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材 Pending JP2003089864A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001283306A JP2003089864A (ja) 2001-09-18 2001-09-18 アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材
TW091118779A TWI232240B (en) 2001-09-18 2002-08-20 Aluminum alloy thin film
CNB028032667A CN100507068C (zh) 2001-09-18 2002-09-12 铝合金薄膜和具有该薄膜的配线电路以及形成此薄膜的靶材
US10/416,957 US20040022664A1 (en) 2001-09-18 2002-09-12 Aluminum alloy thin film and wiring circuit having the thin film and target material for forming the tin film
PCT/JP2002/009331 WO2003029510A1 (fr) 2001-09-18 2002-09-12 Film mince d'alliage d'aluminium, circuit de connexions comportant ce film et materiau cible pour former ledit film
KR10-2003-7006447A KR20030048141A (ko) 2001-09-18 2002-09-12 알루미늄합금박막 및 그 박막을 갖는 배선회로 및 그박막을 형성하는 타겟재

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001283306A JP2003089864A (ja) 2001-09-18 2001-09-18 アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004314922A Division JP2005054273A (ja) 2004-10-29 2004-10-29 ターゲット材の製造方法

Publications (2)

Publication Number Publication Date
JP2003089864A true JP2003089864A (ja) 2003-03-28
JP2003089864A5 JP2003089864A5 (enExample) 2005-06-02

Family

ID=19106811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001283306A Pending JP2003089864A (ja) 2001-09-18 2001-09-18 アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材

Country Status (6)

Country Link
US (1) US20040022664A1 (enExample)
JP (1) JP2003089864A (enExample)
KR (1) KR20030048141A (enExample)
CN (1) CN100507068C (enExample)
TW (1) TWI232240B (enExample)
WO (1) WO2003029510A1 (enExample)

Cited By (30)

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JP2004214606A (ja) * 2002-12-19 2004-07-29 Kobe Steel Ltd 表示デバイスおよびその製法、ならびにスパッタリングターゲット
JP2005303003A (ja) * 2004-04-12 2005-10-27 Kobe Steel Ltd 表示デバイスおよびその製法
JP2005338812A (ja) * 2004-04-28 2005-12-08 Semiconductor Energy Lab Co Ltd 表示装置、電子機器
JP2006005340A (ja) * 2004-05-20 2006-01-05 Semiconductor Energy Lab Co Ltd 発光素子及び表示装置
JP2006024554A (ja) * 2004-06-11 2006-01-26 Semiconductor Energy Lab Co Ltd 発光素子、発光装置およびその作製方法
JP2006086514A (ja) * 2004-08-20 2006-03-30 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2006100856A (ja) * 2002-12-19 2006-04-13 Kobe Steel Ltd 表示デバイスおよびその製法、ならびにスパッタリングターゲット
JP2006156369A (ja) * 2004-11-04 2006-06-15 Semiconductor Energy Lab Co Ltd 表示装置、及び表示装置の作製方法
JP2006179878A (ja) * 2004-11-26 2006-07-06 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2006236839A (ja) * 2005-02-25 2006-09-07 Mitsubishi Electric Corp 有機電界発光型表示装置
WO2006117954A1 (ja) 2005-04-26 2006-11-09 Mitsui Mining & Smelting Co., Ltd. Ａｌ－Ｎｉ－Ｂ合金配線材料及びそれを用いた素子構造
KR100778429B1 (ko) * 2004-07-09 2007-11-21 미쓰이 긴조꾸 고교 가부시키가이샤 스퍼터링 타깃재
JP2007317934A (ja) * 2006-05-26 2007-12-06 Mitsubishi Electric Corp 半導体デバイスおよびアクティブマトリクス型表示装置
JP2008010844A (ja) * 2006-05-31 2008-01-17 Kobe Steel Ltd 薄膜トランジスタ基板および表示デバイス
WO2008117706A1 (ja) * 2007-03-28 2008-10-02 Mitsui Mining & Smelting Co., Ltd. Ａｌ－Ｎｉ－Ｂ系合金スパッタリングターゲット
JP2009076536A (ja) * 2007-09-19 2009-04-09 Mitsubishi Electric Corp Ａｌ合金膜、電子デバイス及び電気光学表示装置用アクティブマトリックス基板
JP2009245422A (ja) * 2008-02-22 2009-10-22 Kobe Steel Ltd タッチパネルセンサー
WO2010106710A1 (ja) * 2009-03-18 2010-09-23 シャープ株式会社 アクティブマトリクス基板、及び表示装置
US7825515B2 (en) 2007-09-12 2010-11-02 Mitsubishi Electric Corporation Semiconductor device, display device, and method of manufacturing semiconductor device
KR100999908B1 (ko) 2006-10-16 2010-12-13 미쓰이 긴조꾸 고교 가부시키가이샤 반사막용 Ａｌ-Ｎｉ-Ｂ 합금 재료
JP2011014548A (ja) * 2004-05-20 2011-01-20 Semiconductor Energy Lab Co Ltd 発光素子及び表示装置
JP2011060738A (ja) * 2009-09-15 2011-03-24 Nippon Seiki Co Ltd 有機ｅｌパネルの製造方法
US7964864B2 (en) 2004-09-30 2011-06-21 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and light-emitting device
US8008651B2 (en) 2004-08-03 2011-08-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and light-emitting device
US8034646B2 (en) 2004-06-11 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device and semiconductor device
JP2012099824A (ja) * 2004-08-20 2012-05-24 Semiconductor Energy Lab Co Ltd 電子機器
JP2012186199A (ja) * 2011-03-03 2012-09-27 Toshiba Corp 半導体発光装置およびその製造方法
KR101217111B1 (ko) 2004-11-04 2012-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 그것의 제조방법
US8399313B2 (en) 2004-11-26 2013-03-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device having first conductive layer including aluminum
US8546804B2 (en) 2010-11-05 2013-10-01 Mitsubishi Electric Corporation Semiconductor device including a region containing nitrogen at an interface and display device

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JP4390260B2 (ja) * 2004-02-16 2009-12-24 三井金属鉱業株式会社 高耐熱性アルミニウム合金配線材料及びターゲット材
CN100417993C (zh) * 2004-03-25 2008-09-10 三井金属鉱业株式会社 薄膜电路的接合结构
JP4761425B2 (ja) * 2004-05-12 2011-08-31 株式会社 日立ディスプレイズ 表示装置および表示装置の製造方法
US7682782B2 (en) * 2004-10-29 2010-03-23 Affymetrix, Inc. System, method, and product for multiple wavelength detection using single source excitation
JP4117001B2 (ja) * 2005-02-17 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
WO2006117884A1 (ja) * 2005-04-26 2006-11-09 Mitsui Mining & Smelting Co., Ltd. Ａｌ－Ｎｉ－Ｂ合金配線材料及びそれを用いた素子構造
JP2009010052A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 表示装置の製造方法
JP2009111201A (ja) * 2007-10-31 2009-05-21 Mitsubishi Electric Corp 積層導電膜、電気光学表示装置及びその製造方法
WO2014030362A1 (ja) 2012-08-22 2014-02-27 Jx日鉱日石金属株式会社 インジウム製円筒型スパッタリングターゲット及びその製造方法
CN102912195A (zh) * 2012-10-29 2013-02-06 熊科学 一种用于液晶显示器配线铝合金薄膜
CN102899533A (zh) * 2012-10-29 2013-01-30 熊科学 一种铝合金薄膜
JP5855319B2 (ja) * 2013-07-08 2016-02-09 Jx日鉱日石金属株式会社 スパッタリングターゲット及び、それの製造方法
CN104962871B (zh) * 2015-05-25 2018-04-27 同济大学 一种高导电性铝合金薄膜及其制备方法
CN105296813A (zh) * 2015-11-03 2016-02-03 任静儿 一种用于液晶显示器配线铝合金
KR102825779B1 (ko) * 2020-06-30 2025-06-25 가부시키가이샤 아루박 금속 배선 구조체, 금속 배선 구조체의 제조방법 및 스퍼터링 타깃

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Cited By (53)

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Publication number Priority date Publication date Assignee Title
US7154180B2 (en) 2002-12-19 2006-12-26 Kobe Steel, Ltd. Electronic device, method of manufacture of the same, and sputtering target
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CN100507068C (zh) 2009-07-01
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