CN100507068C - 铝合金薄膜和具有该薄膜的配线电路以及形成此薄膜的靶材 - Google Patents

铝合金薄膜和具有该薄膜的配线电路以及形成此薄膜的靶材 Download PDF

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Publication number
CN100507068C
CN100507068C CNB028032667A CN02803266A CN100507068C CN 100507068 C CN100507068 C CN 100507068C CN B028032667 A CNB028032667 A CN B028032667A CN 02803266 A CN02803266 A CN 02803266A CN 100507068 C CN100507068 C CN 100507068C
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CN
China
Prior art keywords
thin film
aluminum alloy
atom
film
carbon
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Expired - Fee Related
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CNB028032667A
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English (en)
Chinese (zh)
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CN1479802A (zh
Inventor
久保田高史
渡边弘
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Mitsui Kinzoku Co Ltd
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Mitsui Mining and Smelting Co Ltd
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Publication of CN1479802A publication Critical patent/CN1479802A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10P14/44—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB028032667A 2001-09-18 2002-09-12 铝合金薄膜和具有该薄膜的配线电路以及形成此薄膜的靶材 Expired - Fee Related CN100507068C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001283306A JP2003089864A (ja) 2001-09-18 2001-09-18 アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材
JP283306/2001 2001-09-18
JP283306/01 2001-09-18

Publications (2)

Publication Number Publication Date
CN1479802A CN1479802A (zh) 2004-03-03
CN100507068C true CN100507068C (zh) 2009-07-01

Family

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Family Applications (1)

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CNB028032667A Expired - Fee Related CN100507068C (zh) 2001-09-18 2002-09-12 铝合金薄膜和具有该薄膜的配线电路以及形成此薄膜的靶材

Country Status (6)

Country Link
US (1) US20040022664A1 (enExample)
JP (1) JP2003089864A (enExample)
KR (1) KR20030048141A (enExample)
CN (1) CN100507068C (enExample)
TW (1) TWI232240B (enExample)
WO (1) WO2003029510A1 (enExample)

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JP4886285B2 (ja) * 2002-12-19 2012-02-29 株式会社神戸製鋼所 表示デバイス
JP3940385B2 (ja) 2002-12-19 2007-07-04 株式会社神戸製鋼所 表示デバイスおよびその製法
JP4390260B2 (ja) * 2004-02-16 2009-12-24 三井金属鉱業株式会社 高耐熱性アルミニウム合金配線材料及びターゲット材
CN100417993C (zh) * 2004-03-25 2008-09-10 三井金属鉱业株式会社 薄膜电路的接合结构
JP2005303003A (ja) * 2004-04-12 2005-10-27 Kobe Steel Ltd 表示デバイスおよびその製法
JP4849821B2 (ja) * 2004-04-28 2012-01-11 株式会社半導体エネルギー研究所 表示装置、電子機器
JP4761425B2 (ja) * 2004-05-12 2011-08-31 株式会社 日立ディスプレイズ 表示装置および表示装置の製造方法
JP4731996B2 (ja) * 2004-05-20 2011-07-27 株式会社半導体エネルギー研究所 発光素子及び表示装置
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JP4974493B2 (ja) * 2004-08-20 2012-07-11 株式会社半導体エネルギー研究所 半導体装置及び電子機器
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JP4689439B2 (ja) * 2004-11-04 2011-05-25 株式会社半導体エネルギー研究所 発光装置
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JP2006236839A (ja) * 2005-02-25 2006-09-07 Mitsubishi Electric Corp 有機電界発光型表示装置
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WO2006117884A1 (ja) * 2005-04-26 2006-11-09 Mitsui Mining & Smelting Co., Ltd. Ａｌ－Ｎｉ－Ｂ合金配線材料及びそれを用いた素子構造
JP4728170B2 (ja) 2006-05-26 2011-07-20 三菱電機株式会社 半導体デバイスおよびアクティブマトリクス型表示装置
JP5234892B2 (ja) * 2006-05-31 2013-07-10 株式会社神戸製鋼所 薄膜トランジスタ基板および表示デバイス
KR100999908B1 (ko) 2006-10-16 2010-12-13 미쓰이 긴조꾸 고교 가부시키가이샤 반사막용 Ａｌ-Ｎｉ-Ｂ 합금 재료
CN101542010A (zh) * 2007-03-28 2009-09-23 三井金属鉱业株式会社 Al-Ni-B系合金溅射靶材
JP2009010052A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 表示装置の製造方法
JP5215620B2 (ja) 2007-09-12 2013-06-19 三菱電機株式会社 半導体デバイス、表示装置及び半導体デバイスの製造方法
JP2009076536A (ja) 2007-09-19 2009-04-09 Mitsubishi Electric Corp Ａｌ合金膜、電子デバイス及び電気光学表示装置用アクティブマトリックス基板
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WO2009104769A1 (ja) * 2008-02-22 2009-08-27 株式会社神戸製鋼所 タッチパネルセンサー
WO2010106710A1 (ja) * 2009-03-18 2010-09-23 シャープ株式会社 アクティブマトリクス基板、及び表示装置
JP5177570B2 (ja) * 2009-09-15 2013-04-03 日本精機株式会社 有機ｅｌパネルの製造方法
JP5687133B2 (ja) 2010-11-05 2015-03-18 三菱電機株式会社 半導体装置及び表示装置
JP2012186199A (ja) * 2011-03-03 2012-09-27 Toshiba Corp 半導体発光装置およびその製造方法
EP2818575B1 (en) 2012-08-22 2018-05-30 JX Nippon Mining & Metals Corp. Cylindrical indium sputtering target and process for producing same
CN102899533A (zh) * 2012-10-29 2013-01-30 熊科学 一种铝合金薄膜
CN102912195A (zh) * 2012-10-29 2013-02-06 熊科学 一种用于液晶显示器配线铝合金薄膜
US9922807B2 (en) * 2013-07-08 2018-03-20 Jx Nippon Mining & Metals Corporation Sputtering target and method for production thereof
CN104962871B (zh) * 2015-05-25 2018-04-27 同济大学 一种高导电性铝合金薄膜及其制备方法
CN105296813A (zh) * 2015-11-03 2016-02-03 任静儿 一种用于液晶显示器配线铝合金
JP7133727B2 (ja) * 2020-06-30 2022-09-08 株式会社アルバック 金属配線構造体及び金属配線構造体の製造方法

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JP2001223183A (ja) * 1996-11-14 2001-08-17 Hitachi Metals Ltd Ａｌ系電極膜および液晶ディスプレイ

Also Published As

Publication number Publication date
TWI232240B (en) 2005-05-11
US20040022664A1 (en) 2004-02-05
WO2003029510A1 (fr) 2003-04-10
JP2003089864A (ja) 2003-03-28
KR20030048141A (ko) 2003-06-18
CN1479802A (zh) 2004-03-03

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