KR20030048141A - 알루미늄합금박막 및 그 박막을 갖는 배선회로 및 그박막을 형성하는 타겟재 - Google Patents

알루미늄합금박막 및 그 박막을 갖는 배선회로 및 그박막을 형성하는 타겟재 Download PDF

Info

Publication number
KR20030048141A
KR20030048141A KR10-2003-7006447A KR20037006447A KR20030048141A KR 20030048141 A KR20030048141 A KR 20030048141A KR 20037006447 A KR20037006447 A KR 20037006447A KR 20030048141 A KR20030048141 A KR 20030048141A
Authority
KR
South Korea
Prior art keywords
thin film
aluminum alloy
alloy thin
aluminum
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2003-7006447A
Other languages
English (en)
Korean (ko)
Inventor
쿠보타타카시
와타나베히로시
Original Assignee
미쓰이 긴조꾸 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰이 긴조꾸 고교 가부시키가이샤 filed Critical 미쓰이 긴조꾸 고교 가부시키가이샤
Publication of KR20030048141A publication Critical patent/KR20030048141A/ko
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
KR10-2003-7006447A 2001-09-18 2002-09-12 알루미늄합금박막 및 그 박막을 갖는 배선회로 및 그박막을 형성하는 타겟재 Ceased KR20030048141A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001283306A JP2003089864A (ja) 2001-09-18 2001-09-18 アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材
JPJP-P-2001-00283306 2001-09-18
PCT/JP2002/009331 WO2003029510A1 (fr) 2001-09-18 2002-09-12 Film mince d'alliage d'aluminium, circuit de connexions comportant ce film et materiau cible pour former ledit film

Publications (1)

Publication Number Publication Date
KR20030048141A true KR20030048141A (ko) 2003-06-18

Family

ID=19106811

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7006447A Ceased KR20030048141A (ko) 2001-09-18 2002-09-12 알루미늄합금박막 및 그 박막을 갖는 배선회로 및 그박막을 형성하는 타겟재

Country Status (6)

Country Link
US (1) US20040022664A1 (enExample)
JP (1) JP2003089864A (enExample)
KR (1) KR20030048141A (enExample)
CN (1) CN100507068C (enExample)
TW (1) TWI232240B (enExample)
WO (1) WO2003029510A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8558248B2 (en) 2007-09-19 2013-10-15 Mitsubishi Electric Corporation A1 alloy film, electronic device, and active matrix substrate for use in electrooptic display device

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003104522A1 (en) * 2002-06-07 2003-12-18 Heraeus, Inc. Fabrication of ductile intermetallic sputtering targets
JP4886285B2 (ja) * 2002-12-19 2012-02-29 株式会社神戸製鋼所 表示デバイス
JP3940385B2 (ja) 2002-12-19 2007-07-04 株式会社神戸製鋼所 表示デバイスおよびその製法
JP4390260B2 (ja) * 2004-02-16 2009-12-24 三井金属鉱業株式会社 高耐熱性アルミニウム合金配線材料及びターゲット材
CN100417993C (zh) * 2004-03-25 2008-09-10 三井金属鉱业株式会社 薄膜电路的接合结构
JP2005303003A (ja) * 2004-04-12 2005-10-27 Kobe Steel Ltd 表示デバイスおよびその製法
JP4849821B2 (ja) * 2004-04-28 2012-01-11 株式会社半導体エネルギー研究所 表示装置、電子機器
JP4761425B2 (ja) * 2004-05-12 2011-08-31 株式会社 日立ディスプレイズ 表示装置および表示装置の製造方法
WO2005115062A1 (en) 2004-05-20 2005-12-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and display device
JP4731996B2 (ja) * 2004-05-20 2011-07-27 株式会社半導体エネルギー研究所 発光素子及び表示装置
US7550769B2 (en) 2004-06-11 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device and semiconductor device
JP4741286B2 (ja) * 2004-06-11 2011-08-03 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
CN1878886A (zh) * 2004-07-09 2006-12-13 三井金属鉱业株式会社 溅镀靶材
CN100534247C (zh) * 2004-08-03 2009-08-26 株式会社半导体能源研究所 发光元件和发光器件
JP4974493B2 (ja) * 2004-08-20 2012-07-11 株式会社半導体エネルギー研究所 半導体装置及び電子機器
US7417249B2 (en) * 2004-08-20 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a wiring including an aluminum carbon alloy and titanium or molybdenum
CN101032040B (zh) 2004-09-30 2012-05-30 株式会社半导体能源研究所 发光元件和发光设备
US7682782B2 (en) * 2004-10-29 2010-03-23 Affymetrix, Inc. System, method, and product for multiple wavelength detection using single source excitation
JP4689439B2 (ja) * 2004-11-04 2011-05-25 株式会社半導体エネルギー研究所 発光装置
US20060091397A1 (en) 2004-11-04 2006-05-04 Kengo Akimoto Display device and method for manufacturing the same
US8003449B2 (en) * 2004-11-26 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a reverse staggered thin film transistor
JP5036173B2 (ja) * 2004-11-26 2012-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4117001B2 (ja) * 2005-02-17 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
JP2006236839A (ja) * 2005-02-25 2006-09-07 Mitsubishi Electric Corp 有機電界発光型表示装置
WO2006117884A1 (ja) * 2005-04-26 2006-11-09 Mitsui Mining & Smelting Co., Ltd. Ａｌ－Ｎｉ－Ｂ合金配線材料及びそれを用いた素子構造
WO2006117954A1 (ja) 2005-04-26 2006-11-09 Mitsui Mining & Smelting Co., Ltd. Ａｌ－Ｎｉ－Ｂ合金配線材料及びそれを用いた素子構造
JP4728170B2 (ja) * 2006-05-26 2011-07-20 三菱電機株式会社 半導体デバイスおよびアクティブマトリクス型表示装置
JP5234892B2 (ja) * 2006-05-31 2013-07-10 株式会社神戸製鋼所 薄膜トランジスタ基板および表示デバイス
WO2008047511A1 (en) 2006-10-16 2008-04-24 Mitsui Mining & Smelting Co., Ltd. Al-Ni-B ALLOY MATERIAL FOR REFLECTION FILM
JPWO2008117706A1 (ja) * 2007-03-28 2010-07-15 三井金属鉱業株式会社 Ａｌ−Ｎｉ−Ｂ系合金スパッタリングターゲット
JP2009010052A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 表示装置の製造方法
JP5215620B2 (ja) * 2007-09-12 2013-06-19 三菱電機株式会社 半導体デバイス、表示装置及び半導体デバイスの製造方法
JP2009111201A (ja) * 2007-10-31 2009-05-21 Mitsubishi Electric Corp 積層導電膜、電気光学表示装置及びその製造方法
JP5231282B2 (ja) * 2008-02-22 2013-07-10 株式会社神戸製鋼所 タッチパネルセンサー
US9280025B2 (en) 2009-03-18 2016-03-08 Unified Innovative Technology, Llc Active matrix substrate and display device
JP5177570B2 (ja) * 2009-09-15 2013-04-03 日本精機株式会社 有機ｅｌパネルの製造方法
JP5687133B2 (ja) 2010-11-05 2015-03-18 三菱電機株式会社 半導体装置及び表示装置
JP2012186199A (ja) * 2011-03-03 2012-09-27 Toshiba Corp 半導体発光装置およびその製造方法
WO2014030362A1 (ja) 2012-08-22 2014-02-27 Jx日鉱日石金属株式会社 インジウム製円筒型スパッタリングターゲット及びその製造方法
CN102912195A (zh) * 2012-10-29 2013-02-06 熊科学 一种用于液晶显示器配线铝合金薄膜
CN102899533A (zh) * 2012-10-29 2013-01-30 熊科学 一种铝合金薄膜
JP5855319B2 (ja) * 2013-07-08 2016-02-09 Jx日鉱日石金属株式会社 スパッタリングターゲット及び、それの製造方法
CN104962871B (zh) * 2015-05-25 2018-04-27 同济大学 一种高导电性铝合金薄膜及其制备方法
CN105296813A (zh) * 2015-11-03 2016-02-03 任静儿 一种用于液晶显示器配线铝合金
KR102825779B1 (ko) * 2020-06-30 2025-06-25 가부시키가이샤 아루박 금속 배선 구조체, 금속 배선 구조체의 제조방법 및 스퍼터링 타깃

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4532106A (en) * 1980-07-31 1985-07-30 Inco Alloys International, Inc. Mechanically alloyed dispersion strengthened aluminum-lithium alloy
US4600556A (en) * 1983-08-08 1986-07-15 Inco Alloys International, Inc. Dispersion strengthened mechanically alloyed Al-Mg-Li
JPS60187656A (ja) * 1984-03-05 1985-09-25 Sumitomo Light Metal Ind Ltd 耐食性に優れた包装用アルミニウム合金板及びその製造方法
US4758273A (en) * 1984-10-23 1988-07-19 Inco Alloys International, Inc. Dispersion strengthened aluminum alloys
GB2182348B (en) * 1985-09-13 1989-08-23 Nippon Dia Clevite Co Aluminium alloy and its use in a two-layer bearing material
JPS62240738A (ja) * 1986-04-11 1987-10-21 Nippon Mining Co Ltd 半導体配線材料用ｎ、ｃ含有アルミニウム合金
DE3783405T2 (de) * 1986-08-19 1993-08-05 Fujitsu Ltd Halbleiteranordnung mit einer duennschicht-verdrahtung und verfahren zum herstellen derselben.
US5019891A (en) * 1988-01-20 1991-05-28 Hitachi, Ltd. Semiconductor device and method of fabricating the same
US4834810A (en) * 1988-05-06 1989-05-30 Inco Alloys International, Inc. High modulus A1 alloys
US5240521A (en) * 1991-07-12 1993-08-31 Inco Alloys International, Inc. Heat treatment for dispersion strengthened aluminum-base alloy
US5296676A (en) * 1993-05-20 1994-03-22 Allied-Signal Inc. Welding of aluminum powder alloy products
US6673309B1 (en) * 1994-02-16 2004-01-06 Corrpro Companies, Inc. Sacrificial anode for cathodic protection and alloy therefor
JP2917820B2 (ja) * 1994-07-25 1999-07-12 株式会社神戸製鋼所 半導体装置用電極又は配線材料
KR100312548B1 (ko) * 1995-10-12 2001-12-28 니시무로 타이죠 배선막,배선막형성용스퍼터타겟및이를이용한전자부품
JP3606451B2 (ja) * 1996-11-14 2005-01-05 日立金属株式会社 Ａｌ系電極膜の製造方法
JP3365954B2 (ja) * 1997-04-14 2003-01-14 株式会社神戸製鋼所 半導体電極用Ａｌ−Ｎｉ−Ｙ 合金薄膜および半導体電極用Ａｌ−Ｎｉ−Ｙ 合金薄膜形成用スパッタリングターゲット
CN1138011C (zh) * 1999-08-19 2004-02-11 三井金属鉱业株式会社 铝合金薄膜及靶材和使用它的薄膜形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8558248B2 (en) 2007-09-19 2013-10-15 Mitsubishi Electric Corporation A1 alloy film, electronic device, and active matrix substrate for use in electrooptic display device

Also Published As

Publication number Publication date
TWI232240B (en) 2005-05-11
US20040022664A1 (en) 2004-02-05
WO2003029510A1 (fr) 2003-04-10
JP2003089864A (ja) 2003-03-28
CN100507068C (zh) 2009-07-01
CN1479802A (zh) 2004-03-03

Similar Documents

Publication Publication Date Title
KR20030048141A (ko) 알루미늄합금박막 및 그 박막을 갖는 배선회로 및 그박막을 형성하는 타겟재
KR101274812B1 (ko) 표시 장치, 이것에 사용하는 Ｃｕ 합금막 및 Ｃｕ 합금 스퍼터링 타깃
JP2733006B2 (ja) 半導体用電極及びその製造方法並びに半導体用電極膜形成用スパッタリングターゲット
TWI453285B (zh) An aluminum alloy film, a wiring structure having an aluminum alloy film, and a sputtering target for manufacturing an aluminum alloy film
KR20100118998A (ko) 표시 장치, 그 제조 방법 및 스퍼터링 타깃
JP4022891B2 (ja) 配線膜用Ａｌ合金膜および配線膜形成用スパッタリングターゲット材
WO2006117954A1 (ja) Ａｌ－Ｎｉ－Ｂ合金配線材料及びそれを用いた素子構造
JP4180102B2 (ja) 反射膜用Ａｌ−Ｎｉ−Ｂ合金材料
TWI247812B (en) Aluminum alloy film for wiring and sputter target material for forming the film
KR100367711B1 (ko) 알루미늄합금 박막 및, 타겟재(材)와 그것을 사용한 박막형성방법
JP3979605B2 (ja) Ａｌ−Ｎｉ−Ｂ合金配線材料及びそれを用いた素子構造
KR101597018B1 (ko) 금속 박막 및 금속 박막 형성용 Mo 합금 스퍼터링 타깃재
JP3276446B2 (ja) Ａｌ合金薄膜及びその製造方法並びにＡｌ合金薄膜形成用スパッタリングターゲット
JP2005054273A (ja) ターゲット材の製造方法
JP4390260B2 (ja) 高耐熱性アルミニウム合金配線材料及びターゲット材
JP2005079130A (ja) 薄膜配線層
JP2001053024A (ja) Ａｌ合金電極膜およびスパッタリング用ターゲット
JP3061654B2 (ja) 液晶ディスプレイ用半導体装置材料及び液晶ディスプレイ用半導体装置材料製造用溶製スパッタリングターゲット材料
WO2006117884A1 (ja) Ａｌ－Ｎｉ－Ｂ合金配線材料及びそれを用いた素子構造
JPH10307303A (ja) 液晶表示基板、その製造方法および液晶表示装置
KR100799824B1 (ko) 소스/드레인 전극, 트랜지스터 기판 및 그의 제조 방법, 및표시 디바이스
JP2809523B2 (ja) 耐熱性に優れた液晶ディスプレイ用配線電極薄膜材料
JP5368806B2 (ja) 表示装置用Ａｌ合金膜および表示装置
JP2004238648A (ja) 電子部品用Ａｇ合金膜、平面表示装置および電子部品用Ａｇ合金膜形成用スパッタリングターゲット材
JP2007186779A6 (ja) Ａｌ−Ｎｉ−Ｂ合金配線材料及びそれを用いた素子構造

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20060302

Effective date: 20070515

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20070515

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 2003 7006447

Appeal request date: 20060302

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2006101001868

R18 Changes to party contact information recorded

Free format text: ST27 STATUS EVENT CODE: A-3-3-R10-R18-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000