JP4180102B2 - 反射膜用Al−Ni−B合金材料 - Google Patents
反射膜用Al−Ni−B合金材料 Download PDFInfo
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- JP4180102B2 JP4180102B2 JP2007542170A JP2007542170A JP4180102B2 JP 4180102 B2 JP4180102 B2 JP 4180102B2 JP 2007542170 A JP2007542170 A JP 2007542170A JP 2007542170 A JP2007542170 A JP 2007542170A JP 4180102 B2 JP4180102 B2 JP 4180102B2
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- reflective film
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- alloy material
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- Prior art date
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- 239000000956 alloy Substances 0.000 title claims description 31
- 229910000521 B alloy Inorganic materials 0.000 title claims description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 38
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 19
- 229910052796 boron Inorganic materials 0.000 claims description 19
- 229910052759 nickel Inorganic materials 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 238000005477 sputtering target Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 17
- 238000012360 testing method Methods 0.000 description 14
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910018507 Al—Ni Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/02—Function characteristic reflective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12611—Oxide-containing component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Liquid Crystal (AREA)
Description
Claims (4)
- アルミニウムにニッケルとボロンとを含有した反射膜用Al−Ni−B合金材料において、
1.5at%〜4at%のニッケルと、0.1at%〜0.5at%のボロンとを含有し、残部がアルミニウムであることを特徴とする反射膜用Al−Ni−B合金材料。 - ニッケル含有量が1.5at%〜3at%、ボロン含有量が0.1at%〜0.4at%である請求項1に記載の反射膜用Al−Ni−B合金材料。
- 請求項1又は請求項2に記載の反射膜用Al−Ni−B合金材料により形成された反射膜層と、透明電極層とを備える反射型表示デバイスの素子構造であって、
前記反射膜層が、半導体層に直接接合された部分を有することを特徴とする反射型表示デバイスの素子構造。 - 反射膜用Al−Ni−B合金材料からなる反射膜を形成するためのスパッタリングターゲットであって、
1.5at%〜4at%のニッケルと、0.1at%〜0.5at%のボロンとを含有し、残部がアルミニウムであることを特徴とするスパッタリングターゲット。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006282049 | 2006-10-16 | ||
JP2006282049 | 2006-10-16 | ||
PCT/JP2007/066837 WO2008047511A1 (fr) | 2006-10-16 | 2007-08-30 | MATÉRIAU D'ALLIAGE Al-Ni-B POUR UN FILM RÉFLÉCHISSANT |
Publications (2)
Publication Number | Publication Date |
---|---|
JP4180102B2 true JP4180102B2 (ja) | 2008-11-12 |
JPWO2008047511A1 JPWO2008047511A1 (ja) | 2010-02-18 |
Family
ID=39313762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007542170A Active JP4180102B2 (ja) | 2006-10-16 | 2007-08-30 | 反射膜用Al−Ni−B合金材料 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8003218B2 (ja) |
JP (1) | JP4180102B2 (ja) |
KR (1) | KR100999908B1 (ja) |
CN (1) | CN101365816B (ja) |
TW (1) | TWI372787B (ja) |
WO (1) | WO2008047511A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010004783A1 (ja) * | 2008-07-07 | 2010-01-14 | 三井金属鉱業株式会社 | Al-Ni系合金配線電極材料 |
US20100244032A1 (en) * | 2009-03-31 | 2010-09-30 | Samsung Electronics Co., Ltd. | Aluminum-nickel alloy wiring material, device for a thin film transistor and a thin film transistor substrate using the same, and method of manufacturing the thin film transistor substrate |
JP5218917B2 (ja) * | 2009-07-17 | 2013-06-26 | 日本精機株式会社 | 有機elパネルの製造方法 |
TWI424392B (zh) * | 2010-01-29 | 2014-01-21 | Prime View Int Co Ltd | 主動元件陣列基板及使用其之平面顯示器 |
CN102213878B (zh) * | 2010-04-09 | 2013-04-10 | 元太科技工业股份有限公司 | 有源元件阵列基板及具有该基板的平面显示器 |
US8729554B2 (en) * | 2011-04-27 | 2014-05-20 | Chimei Innolux Corporation | Top-emission organic light-emitting diode structure |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3038505B2 (ja) * | 1991-03-26 | 2000-05-08 | 日本電信電話株式会社 | 薄膜形成法 |
JP4137182B2 (ja) | 1995-10-12 | 2008-08-20 | 株式会社東芝 | 配線膜形成用スパッタターゲット |
JPH10302894A (ja) | 1997-04-25 | 1998-11-13 | Furukawa Electric Co Ltd:The | バネ付きコネクタ |
JP2000294556A (ja) * | 1999-04-05 | 2000-10-20 | Hitachi Metals Ltd | ドライエッチング性に優れたAl合金配線膜およびAl合金配線膜形成用ターゲット |
JP4179489B2 (ja) | 1999-08-11 | 2008-11-12 | 日立金属株式会社 | Al合金電極膜の製造方法 |
JP2003089864A (ja) | 2001-09-18 | 2003-03-28 | Mitsui Mining & Smelting Co Ltd | アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材 |
JP3940385B2 (ja) * | 2002-12-19 | 2007-07-04 | 株式会社神戸製鋼所 | 表示デバイスおよびその製法 |
US20050112019A1 (en) * | 2003-10-30 | 2005-05-26 | Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.) | Aluminum-alloy reflection film for optical information-recording, optical information-recording medium, and aluminum-alloy sputtering target for formation of the aluminum-alloy reflection film for optical information-recording |
JP3979605B2 (ja) * | 2005-04-26 | 2007-09-19 | 三井金属鉱業株式会社 | Al−Ni−B合金配線材料及びそれを用いた素子構造 |
US7531904B2 (en) | 2005-04-26 | 2009-05-12 | Mitsui Mining & Smelting Co., Ltd. | Al-Ni-B alloy wiring material and element structure using the same |
WO2006117884A1 (ja) | 2005-04-26 | 2006-11-09 | Mitsui Mining & Smelting Co., Ltd. | Al-Ni-B合金配線材料及びそれを用いた素子構造 |
-
2007
- 2007-08-30 KR KR1020087012499A patent/KR100999908B1/ko active IP Right Grant
- 2007-08-30 JP JP2007542170A patent/JP4180102B2/ja active Active
- 2007-08-30 WO PCT/JP2007/066837 patent/WO2008047511A1/ja active Application Filing
- 2007-08-30 CN CN2007800019383A patent/CN101365816B/zh not_active Expired - Fee Related
- 2007-08-30 US US12/093,478 patent/US8003218B2/en not_active Expired - Fee Related
- 2007-09-04 TW TW096132837A patent/TWI372787B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI372787B (en) | 2012-09-21 |
JPWO2008047511A1 (ja) | 2010-02-18 |
KR100999908B1 (ko) | 2010-12-13 |
US8003218B2 (en) | 2011-08-23 |
KR20080087789A (ko) | 2008-10-01 |
CN101365816A (zh) | 2009-02-11 |
WO2008047511A1 (fr) | 2008-04-24 |
TW200823298A (en) | 2008-06-01 |
US20090230416A1 (en) | 2009-09-17 |
CN101365816B (zh) | 2010-10-06 |
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