JP2003086604A - 薄膜半導体装置及びその基板ならびにその製造方法 - Google Patents

薄膜半導体装置及びその基板ならびにその製造方法

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Publication number
JP2003086604A
JP2003086604A JP2001317414A JP2001317414A JP2003086604A JP 2003086604 A JP2003086604 A JP 2003086604A JP 2001317414 A JP2001317414 A JP 2001317414A JP 2001317414 A JP2001317414 A JP 2001317414A JP 2003086604 A JP2003086604 A JP 2003086604A
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JP
Japan
Prior art keywords
thin film
layer
semiconductor
semiconductor device
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001317414A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003086604A5 (enExample
Inventor
Yasuhisa Oana
保久 小穴
Masakiyo Matsumura
正清 松村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced LCD Technologies Development Center Co Ltd
Original Assignee
Advanced LCD Technologies Development Center Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced LCD Technologies Development Center Co Ltd filed Critical Advanced LCD Technologies Development Center Co Ltd
Priority to JP2001317414A priority Critical patent/JP2003086604A/ja
Priority to TW091119490A priority patent/TW565942B/zh
Priority to US10/236,537 priority patent/US20030071312A1/en
Priority to PCT/JP2002/009090 priority patent/WO2003023866A1/ja
Priority to CNA028176650A priority patent/CN1554122A/zh
Priority to EP02767911A priority patent/EP1434275A4/en
Priority to KR1020047003241A priority patent/KR100737662B1/ko
Publication of JP2003086604A publication Critical patent/JP2003086604A/ja
Priority to US11/031,144 priority patent/US7067404B2/en
Publication of JP2003086604A5 publication Critical patent/JP2003086604A5/ja
Pending legal-status Critical Current

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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
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    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
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    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001317414A 2001-09-10 2001-09-10 薄膜半導体装置及びその基板ならびにその製造方法 Pending JP2003086604A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2001317414A JP2003086604A (ja) 2001-09-10 2001-09-10 薄膜半導体装置及びその基板ならびにその製造方法
TW091119490A TW565942B (en) 2001-09-10 2002-08-28 A thin film semiconductor device having a gate electrode insulator formed through high-heat oxidization
US10/236,537 US20030071312A1 (en) 2001-09-10 2002-09-06 Thin film semiconductor device having a gate electrode insulator formed through high-heat oxidization
PCT/JP2002/009090 WO2003023866A1 (en) 2001-09-10 2002-09-06 Thin film semiconductor device and method for fabricating the same
CNA028176650A CN1554122A (zh) 2001-09-10 2002-09-06 薄膜半导体器件及其制造方法
EP02767911A EP1434275A4 (en) 2001-09-10 2002-09-06 THIN FILM SEMICONDUCTOR ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
KR1020047003241A KR100737662B1 (ko) 2001-09-10 2002-09-06 박막반도체장치 및 그 제조방법
US11/031,144 US7067404B2 (en) 2001-09-10 2005-01-06 Thin film semiconductor device having a gate electrode insulator formed through high-heat oxidization

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001317414A JP2003086604A (ja) 2001-09-10 2001-09-10 薄膜半導体装置及びその基板ならびにその製造方法

Publications (2)

Publication Number Publication Date
JP2003086604A true JP2003086604A (ja) 2003-03-20
JP2003086604A5 JP2003086604A5 (enExample) 2005-09-08

Family

ID=19135290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001317414A Pending JP2003086604A (ja) 2001-09-10 2001-09-10 薄膜半導体装置及びその基板ならびにその製造方法

Country Status (7)

Country Link
US (2) US20030071312A1 (enExample)
EP (1) EP1434275A4 (enExample)
JP (1) JP2003086604A (enExample)
KR (1) KR100737662B1 (enExample)
CN (1) CN1554122A (enExample)
TW (1) TW565942B (enExample)
WO (1) WO2003023866A1 (enExample)

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US7464364B2 (en) 2004-06-10 2008-12-09 Advanced Lcd Technologies Development Center Co., Ltd. Thin-film transistor circuit, design method for thin-film transistor, design program for thin-film transistor circuit, design program recording medium, design library database, and display device
JP2010263240A (ja) * 2010-07-27 2010-11-18 Sharp Corp 結晶化方法、結晶化装置、薄膜トランジスタ及び表示装置

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US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
US8288239B2 (en) * 2002-09-30 2012-10-16 Applied Materials, Inc. Thermal flux annealing influence of buried species
KR100534579B1 (ko) * 2003-03-05 2005-12-07 삼성에스디아이 주식회사 다결정 실리콘 박막, 이의 제조 방법 및 이를 이용하여제조된 액티브 채널 방향 의존성이 없는 박막 트랜지스터
JP2004363241A (ja) * 2003-06-03 2004-12-24 Advanced Lcd Technologies Development Center Co Ltd 結晶化半導体層の形成方法及び形成装置ならびに半導体装置の製造方法
TW200507279A (en) * 2003-07-16 2005-02-16 Adv Lcd Tech Dev Ct Co Ltd Thin-film semiconductor substrate, method of manufacturing the same; apparatus for and method of crystallization;Thin-film semiconductor apparatus, method of manufacturing the same;
TW200541079A (en) 2004-06-04 2005-12-16 Adv Lcd Tech Dev Ct Co Ltd Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device
FR2873491B1 (fr) * 2004-07-20 2006-09-22 Commissariat Energie Atomique Procede de realisation d'une structure dotee d'au moins une zone d'un ou plusieurs nanocristaux semi-conducteurs localisee avec precision
KR100724560B1 (ko) * 2005-11-18 2007-06-04 삼성전자주식회사 결정질 반도체층을 갖는 반도체소자, 그의 제조방법 및그의 구동방법
CN101790774B (zh) * 2007-06-26 2012-05-02 麻省理工学院 半导体晶圆在薄膜包衣中的重结晶以及有关工艺
KR20250150667A (ko) 2010-02-26 2025-10-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101877377B1 (ko) 2010-04-23 2018-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9379175B2 (en) * 2013-12-26 2016-06-28 Mediatek Inc. Integrated circuits and fabrication methods thereof
RU2626292C1 (ru) * 2016-03-22 2017-07-25 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" (ФГБОУ ВО "Чеченский государственный университет") Способ изготовления полупроводникового прибора
CN117457754A (zh) * 2023-11-22 2024-01-26 武汉华星光电技术有限公司 薄膜晶体管及其制造方法、显示面板

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US20050121111A1 (en) 2005-06-09
US7067404B2 (en) 2006-06-27
TW565942B (en) 2003-12-11
KR100737662B1 (ko) 2007-07-09
EP1434275A1 (en) 2004-06-30
CN1554122A (zh) 2004-12-08

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