JP2003086604A5 - - Google Patents

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Publication number
JP2003086604A5
JP2003086604A5 JP2001317414A JP2001317414A JP2003086604A5 JP 2003086604 A5 JP2003086604 A5 JP 2003086604A5 JP 2001317414 A JP2001317414 A JP 2001317414A JP 2001317414 A JP2001317414 A JP 2001317414A JP 2003086604 A5 JP2003086604 A5 JP 2003086604A5
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JP
Japan
Prior art keywords
layer
thin film
semiconductor
crystal
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001317414A
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English (en)
Japanese (ja)
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JP2003086604A (ja
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Publication date
Application filed filed Critical
Priority to JP2001317414A priority Critical patent/JP2003086604A/ja
Priority claimed from JP2001317414A external-priority patent/JP2003086604A/ja
Priority to TW091119490A priority patent/TW565942B/zh
Priority to EP02767911A priority patent/EP1434275A4/en
Priority to CNA028176650A priority patent/CN1554122A/zh
Priority to PCT/JP2002/009090 priority patent/WO2003023866A1/ja
Priority to KR1020047003241A priority patent/KR100737662B1/ko
Priority to US10/236,537 priority patent/US20030071312A1/en
Publication of JP2003086604A publication Critical patent/JP2003086604A/ja
Priority to US11/031,144 priority patent/US7067404B2/en
Publication of JP2003086604A5 publication Critical patent/JP2003086604A5/ja
Pending legal-status Critical Current

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JP2001317414A 2001-09-10 2001-09-10 薄膜半導体装置及びその基板ならびにその製造方法 Pending JP2003086604A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2001317414A JP2003086604A (ja) 2001-09-10 2001-09-10 薄膜半導体装置及びその基板ならびにその製造方法
TW091119490A TW565942B (en) 2001-09-10 2002-08-28 A thin film semiconductor device having a gate electrode insulator formed through high-heat oxidization
US10/236,537 US20030071312A1 (en) 2001-09-10 2002-09-06 Thin film semiconductor device having a gate electrode insulator formed through high-heat oxidization
PCT/JP2002/009090 WO2003023866A1 (en) 2001-09-10 2002-09-06 Thin film semiconductor device and method for fabricating the same
CNA028176650A CN1554122A (zh) 2001-09-10 2002-09-06 薄膜半导体器件及其制造方法
EP02767911A EP1434275A4 (en) 2001-09-10 2002-09-06 THIN FILM SEMICONDUCTOR ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
KR1020047003241A KR100737662B1 (ko) 2001-09-10 2002-09-06 박막반도체장치 및 그 제조방법
US11/031,144 US7067404B2 (en) 2001-09-10 2005-01-06 Thin film semiconductor device having a gate electrode insulator formed through high-heat oxidization

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001317414A JP2003086604A (ja) 2001-09-10 2001-09-10 薄膜半導体装置及びその基板ならびにその製造方法

Publications (2)

Publication Number Publication Date
JP2003086604A JP2003086604A (ja) 2003-03-20
JP2003086604A5 true JP2003086604A5 (enExample) 2005-09-08

Family

ID=19135290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001317414A Pending JP2003086604A (ja) 2001-09-10 2001-09-10 薄膜半導体装置及びその基板ならびにその製造方法

Country Status (7)

Country Link
US (2) US20030071312A1 (enExample)
EP (1) EP1434275A4 (enExample)
JP (1) JP2003086604A (enExample)
KR (1) KR100737662B1 (enExample)
CN (1) CN1554122A (enExample)
TW (1) TW565942B (enExample)
WO (1) WO2003023866A1 (enExample)

Families Citing this family (17)

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Publication number Priority date Publication date Assignee Title
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
US8288239B2 (en) * 2002-09-30 2012-10-16 Applied Materials, Inc. Thermal flux annealing influence of buried species
KR100534579B1 (ko) * 2003-03-05 2005-12-07 삼성에스디아이 주식회사 다결정 실리콘 박막, 이의 제조 방법 및 이를 이용하여제조된 액티브 채널 방향 의존성이 없는 박막 트랜지스터
JP2004363241A (ja) * 2003-06-03 2004-12-24 Advanced Lcd Technologies Development Center Co Ltd 結晶化半導体層の形成方法及び形成装置ならびに半導体装置の製造方法
TW200507279A (en) * 2003-07-16 2005-02-16 Adv Lcd Tech Dev Ct Co Ltd Thin-film semiconductor substrate, method of manufacturing the same; apparatus for and method of crystallization;Thin-film semiconductor apparatus, method of manufacturing the same;
TW200541079A (en) 2004-06-04 2005-12-16 Adv Lcd Tech Dev Ct Co Ltd Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device
JP4834853B2 (ja) 2004-06-10 2011-12-14 シャープ株式会社 薄膜トランジスタ回路、薄膜トランジスタ回路の設計方法、薄膜トランジスタ回路の設計プログラム、設計プログラム記録媒体、及び表示装置
FR2873491B1 (fr) * 2004-07-20 2006-09-22 Commissariat Energie Atomique Procede de realisation d'une structure dotee d'au moins une zone d'un ou plusieurs nanocristaux semi-conducteurs localisee avec precision
KR100724560B1 (ko) * 2005-11-18 2007-06-04 삼성전자주식회사 결정질 반도체층을 갖는 반도체소자, 그의 제조방법 및그의 구동방법
CN101790774B (zh) * 2007-06-26 2012-05-02 麻省理工学院 半导体晶圆在薄膜包衣中的重结晶以及有关工艺
KR20250150667A (ko) 2010-02-26 2025-10-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101877377B1 (ko) 2010-04-23 2018-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP2010263240A (ja) * 2010-07-27 2010-11-18 Sharp Corp 結晶化方法、結晶化装置、薄膜トランジスタ及び表示装置
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9379175B2 (en) * 2013-12-26 2016-06-28 Mediatek Inc. Integrated circuits and fabrication methods thereof
RU2626292C1 (ru) * 2016-03-22 2017-07-25 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" (ФГБОУ ВО "Чеченский государственный университет") Способ изготовления полупроводникового прибора
CN117457754A (zh) * 2023-11-22 2024-01-26 武汉华星光电技术有限公司 薄膜晶体管及其制造方法、显示面板

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3173114B2 (ja) * 1992-03-19 2001-06-04 カシオ計算機株式会社 薄膜トランジスタ
JPH06338614A (ja) * 1993-05-28 1994-12-06 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
JP2646977B2 (ja) * 1993-11-29 1997-08-27 日本電気株式会社 順スタガ型薄膜トランジスタの製造方法
US6090689A (en) * 1998-03-04 2000-07-18 International Business Machines Corporation Method of forming buried oxide layers in silicon
JPH10340855A (ja) * 1997-06-09 1998-12-22 Fujitsu Ltd 半導体薄膜の結晶化方法およびそれを用いた薄膜トランジスタの製造方法
US6338987B1 (en) * 1998-08-27 2002-01-15 Lg.Philips Lcd Co., Ltd. Method for forming polycrystalline silicon layer and method for fabricating thin film transistor
JP2001237430A (ja) * 2000-02-24 2001-08-31 Matsushita Electric Ind Co Ltd 酸窒化膜の形成方法および薄膜トランジスタの製造方法
US6746942B2 (en) * 2000-09-05 2004-06-08 Sony Corporation Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device

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