KR100737662B1 - 박막반도체장치 및 그 제조방법 - Google Patents

박막반도체장치 및 그 제조방법 Download PDF

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KR100737662B1
KR100737662B1 KR1020047003241A KR20047003241A KR100737662B1 KR 100737662 B1 KR100737662 B1 KR 100737662B1 KR 1020047003241 A KR1020047003241 A KR 1020047003241A KR 20047003241 A KR20047003241 A KR 20047003241A KR 100737662 B1 KR100737662 B1 KR 100737662B1
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layer
thin film
semiconductor
single crystal
semiconductor device
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KR20040029464A (ko
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오아나야스히사
마쓰무라마사키요
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가부시키가이샤 에키쇼센탄 기쥬쓰 가이하쓰센타
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    • H—ELECTRICITY
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3814—Continuous wave laser beam
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
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    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
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    • H10P14/3242—Structure
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    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
KR1020047003241A 2001-09-10 2002-09-06 박막반도체장치 및 그 제조방법 Expired - Fee Related KR100737662B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00317414 2001-09-10
JP2001317414A JP2003086604A (ja) 2001-09-10 2001-09-10 薄膜半導体装置及びその基板ならびにその製造方法
PCT/JP2002/009090 WO2003023866A1 (en) 2001-09-10 2002-09-06 Thin film semiconductor device and method for fabricating the same

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KR20040029464A KR20040029464A (ko) 2004-04-06
KR100737662B1 true KR100737662B1 (ko) 2007-07-09

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US (2) US20030071312A1 (enExample)
EP (1) EP1434275A4 (enExample)
JP (1) JP2003086604A (enExample)
KR (1) KR100737662B1 (enExample)
CN (1) CN1554122A (enExample)
TW (1) TW565942B (enExample)
WO (1) WO2003023866A1 (enExample)

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US8288239B2 (en) * 2002-09-30 2012-10-16 Applied Materials, Inc. Thermal flux annealing influence of buried species
US6987240B2 (en) 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
KR100534579B1 (ko) * 2003-03-05 2005-12-07 삼성에스디아이 주식회사 다결정 실리콘 박막, 이의 제조 방법 및 이를 이용하여제조된 액티브 채널 방향 의존성이 없는 박막 트랜지스터
JP2004363241A (ja) * 2003-06-03 2004-12-24 Advanced Lcd Technologies Development Center Co Ltd 結晶化半導体層の形成方法及び形成装置ならびに半導体装置の製造方法
TW200507279A (en) * 2003-07-16 2005-02-16 Adv Lcd Tech Dev Ct Co Ltd Thin-film semiconductor substrate, method of manufacturing the same; apparatus for and method of crystallization;Thin-film semiconductor apparatus, method of manufacturing the same;
TW200541079A (en) 2004-06-04 2005-12-16 Adv Lcd Tech Dev Ct Co Ltd Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device
JP4834853B2 (ja) 2004-06-10 2011-12-14 シャープ株式会社 薄膜トランジスタ回路、薄膜トランジスタ回路の設計方法、薄膜トランジスタ回路の設計プログラム、設計プログラム記録媒体、及び表示装置
FR2873491B1 (fr) * 2004-07-20 2006-09-22 Commissariat Energie Atomique Procede de realisation d'une structure dotee d'au moins une zone d'un ou plusieurs nanocristaux semi-conducteurs localisee avec precision
KR100724560B1 (ko) * 2005-11-18 2007-06-04 삼성전자주식회사 결정질 반도체층을 갖는 반도체소자, 그의 제조방법 및그의 구동방법
JP5591695B2 (ja) * 2007-06-26 2014-09-17 マサチューセッツ インスティテュート オブ テクノロジー 薄膜カプセル内の半導体ウェハの再結晶化およびその関連工程
KR20230003378A (ko) * 2010-02-26 2023-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101877377B1 (ko) 2010-04-23 2018-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP2010263240A (ja) * 2010-07-27 2010-11-18 Sharp Corp 結晶化方法、結晶化装置、薄膜トランジスタ及び表示装置
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9379175B2 (en) 2013-12-26 2016-06-28 Mediatek Inc. Integrated circuits and fabrication methods thereof
RU2626292C1 (ru) * 2016-03-22 2017-07-25 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" (ФГБОУ ВО "Чеченский государственный университет") Способ изготовления полупроводникового прибора
CN117457754A (zh) * 2023-11-22 2024-01-26 武汉华星光电技术有限公司 薄膜晶体管及其制造方法、显示面板

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JP2001237430A (ja) * 2000-02-24 2001-08-31 Matsushita Electric Ind Co Ltd 酸窒化膜の形成方法および薄膜トランジスタの製造方法

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JPH10340855A (ja) * 1997-06-09 1998-12-22 Fujitsu Ltd 半導体薄膜の結晶化方法およびそれを用いた薄膜トランジスタの製造方法
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US6746942B2 (en) * 2000-09-05 2004-06-08 Sony Corporation Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device

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JPH05267665A (ja) * 1992-03-19 1993-10-15 Casio Comput Co Ltd 薄膜トランジスタ
JP2001237430A (ja) * 2000-02-24 2001-08-31 Matsushita Electric Ind Co Ltd 酸窒化膜の形成方法および薄膜トランジスタの製造方法

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US7067404B2 (en) 2006-06-27
EP1434275A4 (en) 2005-12-21
KR20040029464A (ko) 2004-04-06
WO2003023866A1 (en) 2003-03-20
US20030071312A1 (en) 2003-04-17
TW565942B (en) 2003-12-11
CN1554122A (zh) 2004-12-08
EP1434275A1 (en) 2004-06-30
US20050121111A1 (en) 2005-06-09
JP2003086604A (ja) 2003-03-20

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