JP2003069011A - 半導体装置とその製造方法 - Google Patents

半導体装置とその製造方法

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Publication number
JP2003069011A
JP2003069011A JP2001255454A JP2001255454A JP2003069011A JP 2003069011 A JP2003069011 A JP 2003069011A JP 2001255454 A JP2001255454 A JP 2001255454A JP 2001255454 A JP2001255454 A JP 2001255454A JP 2003069011 A JP2003069011 A JP 2003069011A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
manufacturing
silicon
metal oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001255454A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003069011A5 (https=
Inventor
Yasuhiro Shimamoto
泰洋 嶋本
Katsunori Obata
勝則 小畑
Kazunari Torii
和功 鳥居
Masahiko Hiratani
正彦 平谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001255454A priority Critical patent/JP2003069011A/ja
Priority to TW091116494A priority patent/TW564549B/zh
Priority to US10/216,792 priority patent/US6787451B2/en
Publication of JP2003069011A publication Critical patent/JP2003069011A/ja
Priority to US10/900,430 priority patent/US7119407B2/en
Publication of JP2003069011A5 publication Critical patent/JP2003069011A5/ja
Priority to US11/516,629 priority patent/US20070001244A1/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/01312—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional layer comprising a metal or metal silicide formed by deposition, i.e. without a silicidation reaction, e.g. sputter deposition
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D64/01—Manufacture or treatment
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    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
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    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01346—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a gaseous ambient using an oxygen or a water vapour, e.g. oxidation through a layer
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
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    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
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    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
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    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
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    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2001255454A 2001-08-27 2001-08-27 半導体装置とその製造方法 Pending JP2003069011A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001255454A JP2003069011A (ja) 2001-08-27 2001-08-27 半導体装置とその製造方法
TW091116494A TW564549B (en) 2001-08-27 2002-07-24 Semiconductor device and the manufacturing method thereof
US10/216,792 US6787451B2 (en) 2001-08-27 2002-08-13 Semiconductor device and manufacturing method thereof
US10/900,430 US7119407B2 (en) 2001-08-27 2004-07-28 Semiconductor device and manufacturing method thereof
US11/516,629 US20070001244A1 (en) 2001-08-27 2006-09-07 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001255454A JP2003069011A (ja) 2001-08-27 2001-08-27 半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
JP2003069011A true JP2003069011A (ja) 2003-03-07
JP2003069011A5 JP2003069011A5 (https=) 2005-06-16

Family

ID=19083420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001255454A Pending JP2003069011A (ja) 2001-08-27 2001-08-27 半導体装置とその製造方法

Country Status (3)

Country Link
US (3) US6787451B2 (https=)
JP (1) JP2003069011A (https=)
TW (1) TW564549B (https=)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004288891A (ja) * 2003-03-24 2004-10-14 Hitachi Ltd 半導体装置およびその製造方法
JP2005509287A (ja) * 2001-08-31 2005-04-07 エーエスエム　インターナショナル　エヌ．ヴェー． 低温度におけるゲートスタック製造方法
JP2005159316A (ja) * 2003-10-30 2005-06-16 Tokyo Electron Ltd 半導体装置の製造方法及び成膜装置並びに記憶媒体
JP2005197676A (ja) * 2003-12-29 2005-07-21 Samsung Electronics Co Ltd 半導体装置及びその製造方法
WO2005074037A1 (ja) * 2004-01-28 2005-08-11 Nec Corporation 半導体装置の製造方法
JP2005285809A (ja) * 2004-03-26 2005-10-13 Sony Corp 半導体装置およびその製造方法
JP2006054465A (ja) * 2004-08-12 2006-02-23 Internatl Business Mach Corp <Ibm> ウェハ接合によって製造される半導体−誘電体−半導体デバイス構造体
JP2006066503A (ja) * 2004-08-25 2006-03-09 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2006086151A (ja) * 2004-09-14 2006-03-30 Fujitsu Ltd 半導体装置の製造方法
JP2006086272A (ja) * 2004-09-15 2006-03-30 Fujitsu Ltd 半導体装置
JP2006269520A (ja) * 2005-03-22 2006-10-05 Renesas Technology Corp 半導体装置およびその製造方法
JP2007500946A (ja) * 2003-07-31 2007-01-18 東京エレクトロン株式会社 自己制限的界面酸化による超極薄酸化物層および酸窒化物層の形成。
JP2007242412A (ja) * 2006-03-08 2007-09-20 Hamamatsu Photonics Kk 光電面、それを備える電子管及び光電面の製造方法
JP2008530770A (ja) * 2005-01-13 2008-08-07 インターナショナル・ビジネス・マシーンズ・コーポレーション ｎ−ＦＥＴ用途のためのＨｆＳｉＮ金属を形成する方法
JP2008537347A (ja) * 2005-04-21 2008-09-11 フリースケール セミコンダクター インコーポレイテッド 非ＳｉＯ２ゲート誘電体を有するＭＯＳデバイスの製造方法
US7473994B2 (en) 2003-10-07 2009-01-06 Sony Corporation Method of producing insulator thin film, insulator thin film, method of manufacturing semiconductor device, and semiconductor device
JP2009141161A (ja) * 2007-12-07 2009-06-25 Renesas Technology Corp 半導体装置およびその製造方法
US7554156B2 (en) 2004-12-15 2009-06-30 Panasonic Corporation Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same
JP2010118677A (ja) * 2010-01-15 2010-05-27 Renesas Technology Corp 半導体装置
US7750396B2 (en) 2005-09-26 2010-07-06 Panasonic Corporation Semiconductor device and method for fabricating the same
JP2011014614A (ja) * 2009-06-30 2011-01-20 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
JP2012049181A (ja) * 2010-08-24 2012-03-08 Fujitsu Semiconductor Ltd 半導体装置の製造方法
WO2012131898A1 (ja) * 2011-03-29 2012-10-04 株式会社日立製作所 炭化珪素半導体装置
JP2021097238A (ja) * 2015-06-05 2021-06-24 ソニーグループ株式会社 光検出装置、および測距センサ

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JPWO2003049188A1 (ja) * 2001-11-30 2005-04-21 株式会社ルネサステクノロジ 半導体集積回路装置およびその製造方法
US6787440B2 (en) * 2002-12-10 2004-09-07 Intel Corporation Method for making a semiconductor device having an ultra-thin high-k gate dielectric
US20040126944A1 (en) * 2002-12-31 2004-07-01 Pacheco Rotondaro Antonio Luis Methods for forming interfacial layer for deposition of high-k dielectrics
JP2005072405A (ja) * 2003-08-27 2005-03-17 Sony Corp 薄膜の形成方法および半導体装置の製造方法
US7144825B2 (en) * 2003-10-16 2006-12-05 Freescale Semiconductor, Inc. Multi-layer dielectric containing diffusion barrier material
US7071122B2 (en) * 2003-12-10 2006-07-04 International Business Machines Corporation Field effect transistor with etched-back gate dielectric
US7115959B2 (en) * 2004-06-22 2006-10-03 International Business Machines Corporation Method of forming metal/high-k gate stacks with high mobility
US20080135951A1 (en) * 2004-09-21 2008-06-12 Freescale Semiconductor, Inc Semiconductor Device and Method of Forming the Same
US7242055B2 (en) * 2004-11-15 2007-07-10 International Business Machines Corporation Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide
KR101048890B1 (ko) * 2004-12-01 2011-07-13 주식회사 하이닉스반도체 반도체 소자의 커패시터 형성 방법
US7531405B2 (en) * 2005-02-28 2009-05-12 Qimonds Ag Method of manufacturing a dielectric layer and corresponding semiconductor device
JP4522900B2 (ja) * 2005-03-30 2010-08-11 東京エレクトロン株式会社 成膜方法および記録媒体
US7301219B2 (en) * 2005-06-06 2007-11-27 Macronix International Co., Ltd. Electrically erasable programmable read only memory (EEPROM) cell and method for making the same
US7473607B2 (en) * 2005-07-06 2009-01-06 International Business Machines Corporation Method of manufacturing a multi-workfunction gates for a CMOS circuit
US7655994B2 (en) * 2005-10-26 2010-02-02 International Business Machines Corporation Low threshold voltage semiconductor device with dual threshold voltage control means
JP4782037B2 (ja) * 2006-03-03 2011-09-28 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法及び製造装置
KR101122347B1 (ko) * 2006-05-31 2012-03-23 도쿄엘렉트론가부시키가이샤 절연막의 형성 방법 및 반도체 장치의 제조 방법
KR20090094033A (ko) * 2006-12-28 2009-09-02 도쿄엘렉트론가부시키가이샤 절연막의 형성 방법 및 반도체 장치의 제조 방법
JP5521726B2 (ja) * 2010-04-16 2014-06-18 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8492247B2 (en) * 2010-08-17 2013-07-23 International Business Machines Corporation Programmable FETs using Vt-shift effect and methods of manufacture
CN103177966B (zh) * 2011-12-22 2017-09-22 中芯国际集成电路制造(上海)有限公司 晶体管及其制作方法
KR101934829B1 (ko) * 2012-10-23 2019-03-18 삼성전자 주식회사 반도체 장치 및 반도체 장치의 제조 방법
CN104701240A (zh) * 2015-03-31 2015-06-10 上海华力微电子有限公司 用于制备高k介质层的方法
WO2018005365A1 (en) 2016-06-27 2018-01-04 Board Of Regents, The University Of Texas System Softening nerve cuff electrodes
KR102208520B1 (ko) 2016-07-19 2021-01-26 어플라이드 머티어리얼스, 인코포레이티드 디스플레이 디바이스들에서 활용되는 지르코늄 산화물을 포함하는 하이-k 유전체 재료들
US9876069B1 (en) * 2017-05-18 2018-01-23 Vanguard International Semiconductor Corporation High-voltage semiconductor device and method for manufacturing the same
JP6887307B2 (ja) * 2017-05-19 2021-06-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US12336249B2 (en) * 2022-03-16 2025-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Gate spacer and formation method thereof

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09298297A (ja) * 1996-04-30 1997-11-18 Ricoh Co Ltd 半導体装置およびその製造方法
JPH10189483A (ja) * 1996-12-26 1998-07-21 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
JPH1116900A (ja) * 1997-06-20 1999-01-22 Res Dev Corp Of Japan 半導体基板表面の絶縁膜の形成方法及びその形成装置
JPH1126756A (ja) * 1997-06-30 1999-01-29 Sharp Corp 半導体装置の製造方法
JP2000049349A (ja) * 1998-07-15 2000-02-18 Texas Instr Inc <Ti> 集積回路に電界効果デバイスを製造する方法
JP2000058831A (ja) * 1998-06-04 2000-02-25 Toshiba Corp Ｍｉｓ半導体装置及び不揮発性半導体記憶装置
JP2000106432A (ja) * 1998-09-29 2000-04-11 Nec Corp ゲート絶縁膜の製造方法及びそれを用いた半導体装置
JP2000307083A (ja) * 1999-04-22 2000-11-02 Hitachi Ltd 半導体装置およびその製造方法
JP2000315789A (ja) * 1999-04-30 2000-11-14 Toshiba Corp 半導体装置及びその製造方法
JP2000332235A (ja) * 1999-05-17 2000-11-30 Hitachi Ltd 半導体装置およびその製造方法
JP2001077108A (ja) * 1999-08-31 2001-03-23 Nec Corp 半導体装置及び複合酸化物薄膜の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11135774A (ja) 1997-07-24 1999-05-21 Texas Instr Inc <Ti> 高誘電率シリケート・ゲート誘電体
US6020024A (en) * 1997-08-04 2000-02-01 Motorola, Inc. Method for forming high dielectric constant metal oxides
US6140167A (en) * 1998-08-18 2000-10-31 Advanced Micro Devices, Inc. High performance MOSFET and method of forming the same using silicidation and junction implantation prior to gate formation
US6610548B1 (en) * 1999-03-26 2003-08-26 Sony Corporation Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory
CA2360312A1 (en) * 2000-10-30 2002-04-30 National Research Council Of Canada Novel gate dielectric

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09298297A (ja) * 1996-04-30 1997-11-18 Ricoh Co Ltd 半導体装置およびその製造方法
JPH10189483A (ja) * 1996-12-26 1998-07-21 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
JPH1116900A (ja) * 1997-06-20 1999-01-22 Res Dev Corp Of Japan 半導体基板表面の絶縁膜の形成方法及びその形成装置
JPH1126756A (ja) * 1997-06-30 1999-01-29 Sharp Corp 半導体装置の製造方法
JP2000058831A (ja) * 1998-06-04 2000-02-25 Toshiba Corp Ｍｉｓ半導体装置及び不揮発性半導体記憶装置
JP2000049349A (ja) * 1998-07-15 2000-02-18 Texas Instr Inc <Ti> 集積回路に電界効果デバイスを製造する方法
JP2000106432A (ja) * 1998-09-29 2000-04-11 Nec Corp ゲート絶縁膜の製造方法及びそれを用いた半導体装置
JP2000307083A (ja) * 1999-04-22 2000-11-02 Hitachi Ltd 半導体装置およびその製造方法
JP2000315789A (ja) * 1999-04-30 2000-11-14 Toshiba Corp 半導体装置及びその製造方法
JP2000332235A (ja) * 1999-05-17 2000-11-30 Hitachi Ltd 半導体装置およびその製造方法
JP2001077108A (ja) * 1999-08-31 2001-03-23 Nec Corp 半導体装置及び複合酸化物薄膜の製造方法

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005509287A (ja) * 2001-08-31 2005-04-07 エーエスエム　インターナショナル　エヌ．ヴェー． 低温度におけるゲートスタック製造方法
JP2004288891A (ja) * 2003-03-24 2004-10-14 Hitachi Ltd 半導体装置およびその製造方法
JP2007500946A (ja) * 2003-07-31 2007-01-18 東京エレクトロン株式会社 自己制限的界面酸化による超極薄酸化物層および酸窒化物層の形成。
JP4933256B2 (ja) * 2003-07-31 2012-05-16 東京エレクトロン株式会社 半導体微細構造物を形成する方法
US7622401B2 (en) 2003-10-07 2009-11-24 Sony Corporation Method of producing insulator thin film, insulator thin film, method of manufacturing semiconductor device, and semiconductor device
US7473994B2 (en) 2003-10-07 2009-01-06 Sony Corporation Method of producing insulator thin film, insulator thin film, method of manufacturing semiconductor device, and semiconductor device
JP2005159316A (ja) * 2003-10-30 2005-06-16 Tokyo Electron Ltd 半導体装置の製造方法及び成膜装置並びに記憶媒体
JP2005197676A (ja) * 2003-12-29 2005-07-21 Samsung Electronics Co Ltd 半導体装置及びその製造方法
JPWO2005074037A1 (ja) * 2004-01-28 2007-09-13 日本電気株式会社 半導体装置の製造方法
JP5050351B2 (ja) * 2004-01-28 2012-10-17 日本電気株式会社 半導体装置の製造方法
WO2005074037A1 (ja) * 2004-01-28 2005-08-11 Nec Corporation 半導体装置の製造方法
JP2005285809A (ja) * 2004-03-26 2005-10-13 Sony Corp 半導体装置およびその製造方法
JP2006054465A (ja) * 2004-08-12 2006-02-23 Internatl Business Mach Corp <Ibm> ウェハ接合によって製造される半導体−誘電体−半導体デバイス構造体
JP2006066503A (ja) * 2004-08-25 2006-03-09 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2006086151A (ja) * 2004-09-14 2006-03-30 Fujitsu Ltd 半導体装置の製造方法
JP2006086272A (ja) * 2004-09-15 2006-03-30 Fujitsu Ltd 半導体装置
US7554156B2 (en) 2004-12-15 2009-06-30 Panasonic Corporation Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same
US7956413B2 (en) 2004-12-15 2011-06-07 Panasonic Corporation Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same
JP2008530770A (ja) * 2005-01-13 2008-08-07 インターナショナル・ビジネス・マシーンズ・コーポレーション ｎ−ＦＥＴ用途のためのＨｆＳｉＮ金属を形成する方法
JP2006269520A (ja) * 2005-03-22 2006-10-05 Renesas Technology Corp 半導体装置およびその製造方法
JP2008537347A (ja) * 2005-04-21 2008-09-11 フリースケール セミコンダクター インコーポレイテッド 非ＳｉＯ２ゲート誘電体を有するＭＯＳデバイスの製造方法
US7750396B2 (en) 2005-09-26 2010-07-06 Panasonic Corporation Semiconductor device and method for fabricating the same
US8035174B2 (en) 2005-09-26 2011-10-11 Panasonic Corporation Semiconductor device and method for fabricating the same
JP2007242412A (ja) * 2006-03-08 2007-09-20 Hamamatsu Photonics Kk 光電面、それを備える電子管及び光電面の製造方法
JP2009141161A (ja) * 2007-12-07 2009-06-25 Renesas Technology Corp 半導体装置およびその製造方法
JP2011014614A (ja) * 2009-06-30 2011-01-20 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
JP2010118677A (ja) * 2010-01-15 2010-05-27 Renesas Technology Corp 半導体装置
JP2012049181A (ja) * 2010-08-24 2012-03-08 Fujitsu Semiconductor Ltd 半導体装置の製造方法
WO2012131898A1 (ja) * 2011-03-29 2012-10-04 株式会社日立製作所 炭化珪素半導体装置
JP2021097238A (ja) * 2015-06-05 2021-06-24 ソニーグループ株式会社 光検出装置、および測距センサ

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TW564549B (en) 2003-12-01
US20030042557A1 (en) 2003-03-06

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