JP4933256B2 - 半導体微細構造物を形成する方法 - Google Patents
半導体微細構造物を形成する方法 Download PDFInfo
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- JP4933256B2 JP4933256B2 JP2006522087A JP2006522087A JP4933256B2 JP 4933256 B2 JP4933256 B2 JP 4933256B2 JP 2006522087 A JP2006522087 A JP 2006522087A JP 2006522087 A JP2006522087 A JP 2006522087A JP 4933256 B2 JP4933256 B2 JP 4933256B2
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- layer
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- oxynitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02249—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by combined oxidation and nitridation performed simultaneously
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
Claims (23)
- 半導体微細構造物を形成する方法であって、
バッチ型処理システムの処理チャンバ内に複数の基板を配置することと、
この処理チャンバ内に窒素含有酸化ガスを含むプロセスガスを流すことと、
酸窒化物層を前記複数の基板上に、前記酸窒化物層が自己制限的な厚さに達するまで実行される自己制限的な熱酸化プロセスで形成することと、
前記酸窒化物層上にhigh−k層を堆積させることとから基本的に成り、
前記処理チャンバ内の前記窒素含有酸化ガスの分圧が、10Torr未満である方法。 - 前記酸窒化物層の厚さは、15Å未満である請求項1に記載の方法。
- 前記酸窒化物層の厚さは、10Å未満である請求項1に記載の方法。
- 前記酸窒化物層の厚さ均一性は、前記基板にわたって1Åより少なく変化する請求項1に記載の方法。
- 前記基板の直径は、195mmより大きくあり得る請求項1に記載の方法。
- 前記処理チャンバ内の窒素含有酸化ガスの分圧は、5Torr未満である請求項1に記載の方法。
- 前記窒素含有酸化ガスは、NOと、N2Oと、NH3とのうちの少なくとも1つのを含んでいる請求項1に記載の方法。
- 前記プロセスガスは、酸素含有ガスを更に含んでいる請求項1に記載の方法。
- 前記酸素含有ガスは、O2と、O3と、H2Oと、H2O2とのうちの少なくとも1つを含んでいる請求項8に記載の方法。
- 前記プロセスガスは、不活性ガスを更に含んでいる請求項1に記載の方法。
- 前記不活性ガスは、Arと、Heと、Neと、Krと、Xeと、N2とのうちの少なくとも1つを含んでいる請求項10に記載の方法。
- 前記基板の温度は、500℃と、1000℃との間である請求項1に記載の方法。
- 前記基板の温度は、700℃である請求項1に記載の方法。
- 前記基板は、Siより形成され、前記酸窒化物層は、SiOxNyより形成されている請求項1に記載の方法。
- 前記酸窒化物層をプラズマ窒化プロセスにさらすことを更に具備する請求項1に記載の方法。
- 前記プラズマ窒化プロセスは、N2と、NOと、N2Oと、NH3とのうちの少なくとも1つを含むプロセスガスを利用する請求項15に記載の方法。
- N2OおよびO2の少なくとも1つを含むプロセスガスを使用して酸窒化物層をポストアニールすることを更に具備する請求項1に記載の方法。
- 前記配置することは、初期の誘電体層を含んでいる基板を配置することを備えている請求項1に記載の方法。
- 前記初期の誘電体層は、自己制限的酸化プロセスで形成されている請求項18に記載の方法。
- 前記初期の誘電体層は、酸化物層と、酸窒化物層と、窒化物層とのうちの少なくとも1つより形成されている請求項18に記載の方法。
- 前記酸化物層はSiO2より形成され、前記酸窒化物層は、SiOxNyより形成され、前記窒化物層は、SiNxより形成されている請求項20に記載の方法。
- 前記処理チャンバ内の圧力は、大気圧より低い請求項1に記載の方法。
- 前記処理チャンバ内の圧力は、50Torr未満である請求項22に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/630,969 US7235440B2 (en) | 2003-07-31 | 2003-07-31 | Formation of ultra-thin oxide layers by self-limiting interfacial oxidation |
US10/630,969 | 2003-07-31 | ||
US10/630,970 | 2003-07-31 | ||
US10/630,970 US7202186B2 (en) | 2003-07-31 | 2003-07-31 | Method of forming uniform ultra-thin oxynitride layers |
PCT/US2004/024595 WO2005013348A2 (en) | 2003-07-31 | 2004-07-30 | Formation of ultra-thin oxide and oxynitride layers by self-limiting interfacial oxidation |
Publications (2)
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JP2007500946A JP2007500946A (ja) | 2007-01-18 |
JP4933256B2 true JP4933256B2 (ja) | 2012-05-16 |
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JP2006522087A Expired - Fee Related JP4933256B2 (ja) | 2003-07-31 | 2004-07-30 | 半導体微細構造物を形成する方法 |
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JP (1) | JP4933256B2 (ja) |
WO (1) | WO2005013348A2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060151846A1 (en) * | 2005-01-13 | 2006-07-13 | International Business Machines Corporation | Method of forming HfSiN metal for n-FET applications |
US7402472B2 (en) * | 2005-02-25 | 2008-07-22 | Freescale Semiconductor, Inc. | Method of making a nitrided gate dielectric |
US7534731B2 (en) * | 2007-03-30 | 2009-05-19 | Tokyo Electron Limited | Method for growing a thin oxynitride film on a substrate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001176867A (ja) * | 1999-12-17 | 2001-06-29 | Natl Inst Of Advanced Industrial Science & Technology Meti | シリコン酸化膜の形成方法 |
JP2003069011A (ja) * | 2001-08-27 | 2003-03-07 | Hitachi Ltd | 半導体装置とその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3121122B2 (ja) * | 1992-06-26 | 2000-12-25 | 東京エレクトロン株式会社 | 熱処理方法 |
JPH11307526A (ja) * | 1998-04-24 | 1999-11-05 | Nec Corp | 酸化膜の作製方法 |
US20020102859A1 (en) * | 2001-01-31 | 2002-08-01 | Yoo Woo Sik | Method for ultra thin film formation |
US6495436B2 (en) * | 2001-02-09 | 2002-12-17 | Micron Technology, Inc. | Formation of metal oxide gate dielectric |
-
2004
- 2004-07-30 WO PCT/US2004/024595 patent/WO2005013348A2/en active Application Filing
- 2004-07-30 JP JP2006522087A patent/JP4933256B2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001176867A (ja) * | 1999-12-17 | 2001-06-29 | Natl Inst Of Advanced Industrial Science & Technology Meti | シリコン酸化膜の形成方法 |
JP2003069011A (ja) * | 2001-08-27 | 2003-03-07 | Hitachi Ltd | 半導体装置とその製造方法 |
Also Published As
Publication number | Publication date |
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WO2005013348A3 (en) | 2005-09-22 |
WO2005013348A2 (en) | 2005-02-10 |
JP2007500946A (ja) | 2007-01-18 |
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