JP2003007978A5 - - Google Patents
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- Publication number
- JP2003007978A5 JP2003007978A5 JP2001183098A JP2001183098A JP2003007978A5 JP 2003007978 A5 JP2003007978 A5 JP 2003007978A5 JP 2001183098 A JP2001183098 A JP 2001183098A JP 2001183098 A JP2001183098 A JP 2001183098A JP 2003007978 A5 JP2003007978 A5 JP 2003007978A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- misfet
- conductive
- pair
- conductive pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 94
- 239000004065 semiconductor Substances 0.000 claims 68
- 239000011229 interlayer Substances 0.000 claims 48
- 239000003990 capacitor Substances 0.000 claims 36
- 238000004519 manufacturing process Methods 0.000 claims 34
- 230000015572 biosynthetic process Effects 0.000 claims 11
- 238000000034 method Methods 0.000 claims 11
- 229910052751 metal Inorganic materials 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 3
- 229910052721 tungsten Inorganic materials 0.000 claims 3
- 239000010937 tungsten Substances 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- 238000003860 storage Methods 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001183098A JP4083397B2 (ja) | 2001-06-18 | 2001-06-18 | 半導体集積回路装置 |
| TW091108120A TW552702B (en) | 2001-06-18 | 2002-04-19 | Semiconductor integrated circuit device and a method of manufacturing the same |
| KR1020020025475A KR100869620B1 (ko) | 2001-06-18 | 2002-05-09 | 반도체 집적회로장치 및 그 제조방법 |
| US10/152,615 US6635937B2 (en) | 2001-06-18 | 2002-05-23 | Semiconductor integrated circuit device |
| US10/308,001 US6762444B2 (en) | 2001-06-18 | 2002-12-03 | Semiconductor integrated circuit device and a method of manufacturing the same |
| US10/846,872 US7022563B2 (en) | 2001-06-18 | 2004-05-17 | Semiconductor integrated circuit device and a method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001183098A JP4083397B2 (ja) | 2001-06-18 | 2001-06-18 | 半導体集積回路装置 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006025274A Division JP4083770B2 (ja) | 2006-02-02 | 2006-02-02 | 半導体集積回路装置の製造方法 |
| JP2007270790A Division JP2008085350A (ja) | 2007-10-18 | 2007-10-18 | 半導体集積回路装置の製造方法および半導体集積回路装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003007978A JP2003007978A (ja) | 2003-01-10 |
| JP2003007978A5 true JP2003007978A5 (enExample) | 2006-03-23 |
| JP4083397B2 JP4083397B2 (ja) | 2008-04-30 |
Family
ID=19023090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001183098A Expired - Fee Related JP4083397B2 (ja) | 2001-06-18 | 2001-06-18 | 半導体集積回路装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US6635937B2 (enExample) |
| JP (1) | JP4083397B2 (enExample) |
| KR (1) | KR100869620B1 (enExample) |
| TW (1) | TW552702B (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100574715B1 (ko) | 2001-01-30 | 2006-04-28 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 집적 회로 장치 |
| US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| JP2004253730A (ja) * | 2003-02-21 | 2004-09-09 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
| JP4579506B2 (ja) * | 2003-06-06 | 2010-11-10 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| JP4531615B2 (ja) * | 2005-02-03 | 2010-08-25 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
| CN1893085A (zh) * | 2005-07-07 | 2007-01-10 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
| US7514757B2 (en) * | 2006-08-31 | 2009-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory formation with reduced metallization layers |
| JP2009231445A (ja) * | 2008-03-21 | 2009-10-08 | Toshiba Corp | 半導体記憶装置 |
| JP2010118597A (ja) * | 2008-11-14 | 2010-05-27 | Nec Electronics Corp | 半導体装置 |
| EP2417123A2 (en) | 2009-04-06 | 2012-02-15 | Agios Pharmaceuticals, Inc. | Therapeutic compositions and related methods of use |
| DK2427441T3 (en) | 2009-05-04 | 2017-03-20 | Agios Pharmaceuticals Inc | PKM2 Activators for use in the treatment of cancer |
| EP2448581B1 (en) | 2009-06-29 | 2016-12-07 | Agios Pharmaceuticals, Inc. | Therapeutic compositions and related methods of use |
| CA2944788C (en) | 2009-06-29 | 2023-08-22 | Agios Pharmaceuticals, Inc. | Compounds, and compositions thereof, which modulate pyruvate kinase m2, and methods of making same |
| JP5837091B2 (ja) | 2010-12-17 | 2015-12-24 | アジオス ファーマシューティカルズ， インコーポレイテッド | ピルビン酸キナーゼｍ２（ｐｋｍ２）調節剤としての新規ｎ−（４−（アゼチジン−１−カルボニル）フェニル）−（ヘテロ−）アリールスルホンアミド誘導体 |
| JP6092118B2 (ja) | 2010-12-21 | 2017-03-08 | アジオス ファーマシューティカルズ， インコーポレイテッド | ニ環式ｐｋｍ２活性化剤 |
| TWI549947B (zh) | 2010-12-29 | 2016-09-21 | 阿吉歐斯製藥公司 | 治療化合物及組成物 |
| KR101873543B1 (ko) | 2011-05-03 | 2018-07-02 | 아지오스 파마슈티컬스 아이엔씨. | 치료에 사용하기 위한 피루베이트 키나아제 활성제 |
| US8947902B2 (en) | 2012-03-06 | 2015-02-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor memory and method of making the same |
| US9349436B2 (en) | 2012-03-06 | 2016-05-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor memory and method of making the same |
| DK3307271T3 (da) | 2015-06-11 | 2023-10-09 | Agios Pharmaceuticals Inc | Fremgangsmåder til anvendelse af pyruvatkinase-aktivatorer |
| FR3055463A1 (fr) * | 2016-08-31 | 2018-03-02 | St Microelectronics Crolles 2 Sas | Element de memorisation durci |
| KR102336827B1 (ko) | 2017-06-08 | 2021-12-09 | 삼성전자주식회사 | 반도체 장치 |
| KR102360410B1 (ko) | 2017-08-30 | 2022-02-08 | 삼성전자주식회사 | 반도체 장치 |
| JP2021136301A (ja) * | 2020-02-26 | 2021-09-13 | キオクシア株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59200453A (ja) | 1983-04-27 | 1984-11-13 | Hitachi Ltd | 半導体装置の製造方法 |
| JPH01212802A (ja) * | 1988-02-22 | 1989-08-25 | Hitachi Ltd | ボイラの蒸気温度制御装置 |
| JP2695185B2 (ja) * | 1988-05-02 | 1997-12-24 | 株式会社日立製作所 | 半導体集積回路装置及びその製造方法 |
| FR2658951B1 (fr) * | 1990-02-23 | 1992-05-07 | Bonis Maurice | Procede de fabrication d'un circuit integre pour filiere analogique rapide utilisant des lignes d'interconnexions locales en siliciure. |
| US5237187A (en) * | 1990-11-30 | 1993-08-17 | Hitachi, Ltd. | Semiconductor memory circuit device and method for fabricating same |
| TW297158B (enExample) | 1994-05-27 | 1997-02-01 | Hitachi Ltd | |
| JP3535615B2 (ja) * | 1995-07-18 | 2004-06-07 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| JPH09260510A (ja) | 1996-01-17 | 1997-10-03 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| JPH1098162A (ja) * | 1996-09-20 | 1998-04-14 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JP3599504B2 (ja) * | 1996-11-27 | 2004-12-08 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| JP3597334B2 (ja) * | 1996-12-17 | 2004-12-08 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| JP3718058B2 (ja) * | 1998-06-17 | 2005-11-16 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| JP2001060672A (ja) * | 1999-08-20 | 2001-03-06 | Mitsubishi Electric Corp | エッチング方法およびエッチングマスク |
| JP2001085625A (ja) * | 1999-09-13 | 2001-03-30 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| JP2001127270A (ja) * | 1999-10-27 | 2001-05-11 | Nec Corp | 半導体装置及びその製造方法 |
| KR100574715B1 (ko) | 2001-01-30 | 2006-04-28 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 집적 회로 장치 |
-
2001
- 2001-06-18 JP JP2001183098A patent/JP4083397B2/ja not_active Expired - Fee Related
-
2002
- 2002-04-19 TW TW091108120A patent/TW552702B/zh not_active IP Right Cessation
- 2002-05-09 KR KR1020020025475A patent/KR100869620B1/ko not_active Expired - Fee Related
- 2002-05-23 US US10/152,615 patent/US6635937B2/en not_active Expired - Fee Related
- 2002-12-03 US US10/308,001 patent/US6762444B2/en not_active Expired - Fee Related
-
2004
- 2004-05-17 US US10/846,872 patent/US7022563B2/en not_active Expired - Fee Related
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