JP4083397B2 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

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Publication number
JP4083397B2
JP4083397B2 JP2001183098A JP2001183098A JP4083397B2 JP 4083397 B2 JP4083397 B2 JP 4083397B2 JP 2001183098 A JP2001183098 A JP 2001183098A JP 2001183098 A JP2001183098 A JP 2001183098A JP 4083397 B2 JP4083397 B2 JP 4083397B2
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JP
Japan
Prior art keywords
pair
insulating film
conductive layers
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2001183098A
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English (en)
Japanese (ja)
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JP2003007978A (ja
JP2003007978A5 (enExample
Inventor
文雄 大塚
裕介 野中
聡 島本
荘平 大森
秀士 風間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
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Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2001183098A priority Critical patent/JP4083397B2/ja
Priority to TW091108120A priority patent/TW552702B/zh
Priority to KR1020020025475A priority patent/KR100869620B1/ko
Priority to US10/152,615 priority patent/US6635937B2/en
Priority to US10/308,001 priority patent/US6762444B2/en
Publication of JP2003007978A publication Critical patent/JP2003007978A/ja
Priority to US10/846,872 priority patent/US7022563B2/en
Publication of JP2003007978A5 publication Critical patent/JP2003007978A5/ja
Application granted granted Critical
Publication of JP4083397B2 publication Critical patent/JP4083397B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2001183098A 2001-06-18 2001-06-18 半導体集積回路装置 Expired - Fee Related JP4083397B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001183098A JP4083397B2 (ja) 2001-06-18 2001-06-18 半導体集積回路装置
TW091108120A TW552702B (en) 2001-06-18 2002-04-19 Semiconductor integrated circuit device and a method of manufacturing the same
KR1020020025475A KR100869620B1 (ko) 2001-06-18 2002-05-09 반도체 집적회로장치 및 그 제조방법
US10/152,615 US6635937B2 (en) 2001-06-18 2002-05-23 Semiconductor integrated circuit device
US10/308,001 US6762444B2 (en) 2001-06-18 2002-12-03 Semiconductor integrated circuit device and a method of manufacturing the same
US10/846,872 US7022563B2 (en) 2001-06-18 2004-05-17 Semiconductor integrated circuit device and a method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001183098A JP4083397B2 (ja) 2001-06-18 2001-06-18 半導体集積回路装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2006025274A Division JP4083770B2 (ja) 2006-02-02 2006-02-02 半導体集積回路装置の製造方法
JP2007270790A Division JP2008085350A (ja) 2007-10-18 2007-10-18 半導体集積回路装置の製造方法および半導体集積回路装置

Publications (3)

Publication Number Publication Date
JP2003007978A JP2003007978A (ja) 2003-01-10
JP2003007978A5 JP2003007978A5 (enExample) 2006-03-23
JP4083397B2 true JP4083397B2 (ja) 2008-04-30

Family

ID=19023090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001183098A Expired - Fee Related JP4083397B2 (ja) 2001-06-18 2001-06-18 半導体集積回路装置

Country Status (4)

Country Link
US (3) US6635937B2 (enExample)
JP (1) JP4083397B2 (enExample)
KR (1) KR100869620B1 (enExample)
TW (1) TW552702B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100574715B1 (ko) 2001-01-30 2006-04-28 가부시키가이샤 히타치세이사쿠쇼 반도체 집적 회로 장치
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
JP2004253730A (ja) * 2003-02-21 2004-09-09 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP4579506B2 (ja) * 2003-06-06 2010-11-10 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4531615B2 (ja) * 2005-02-03 2010-08-25 ルネサスエレクトロニクス株式会社 半導体集積回路装置
CN1893085A (zh) * 2005-07-07 2007-01-10 松下电器产业株式会社 半导体装置及其制造方法
US7514757B2 (en) * 2006-08-31 2009-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Memory formation with reduced metallization layers
JP2009231445A (ja) * 2008-03-21 2009-10-08 Toshiba Corp 半導体記憶装置
JP2010118597A (ja) * 2008-11-14 2010-05-27 Nec Electronics Corp 半導体装置
EP2417123A2 (en) 2009-04-06 2012-02-15 Agios Pharmaceuticals, Inc. Therapeutic compositions and related methods of use
DK2427441T3 (en) 2009-05-04 2017-03-20 Agios Pharmaceuticals Inc PKM2 Activators for use in the treatment of cancer
EP2448581B1 (en) 2009-06-29 2016-12-07 Agios Pharmaceuticals, Inc. Therapeutic compositions and related methods of use
CA2944788C (en) 2009-06-29 2023-08-22 Agios Pharmaceuticals, Inc. Compounds, and compositions thereof, which modulate pyruvate kinase m2, and methods of making same
JP5837091B2 (ja) 2010-12-17 2015-12-24 アジオス ファーマシューティカルズ， インコーポレイテッド ピルビン酸キナーゼｍ２（ｐｋｍ２）調節剤としての新規ｎ−（４−（アゼチジン−１−カルボニル）フェニル）−（ヘテロ−）アリールスルホンアミド誘導体
JP6092118B2 (ja) 2010-12-21 2017-03-08 アジオス ファーマシューティカルズ， インコーポレイテッド ニ環式ｐｋｍ２活性化剤
TWI549947B (zh) 2010-12-29 2016-09-21 阿吉歐斯製藥公司 治療化合物及組成物
KR101873543B1 (ko) 2011-05-03 2018-07-02 아지오스 파마슈티컬스 아이엔씨. 치료에 사용하기 위한 피루베이트 키나아제 활성제
US8947902B2 (en) 2012-03-06 2015-02-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory and method of making the same
US9349436B2 (en) 2012-03-06 2016-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory and method of making the same
DK3307271T3 (da) 2015-06-11 2023-10-09 Agios Pharmaceuticals Inc Fremgangsmåder til anvendelse af pyruvatkinase-aktivatorer
FR3055463A1 (fr) * 2016-08-31 2018-03-02 St Microelectronics Crolles 2 Sas Element de memorisation durci
KR102336827B1 (ko) 2017-06-08 2021-12-09 삼성전자주식회사 반도체 장치
KR102360410B1 (ko) 2017-08-30 2022-02-08 삼성전자주식회사 반도체 장치
JP2021136301A (ja) * 2020-02-26 2021-09-13 キオクシア株式会社 不揮発性半導体記憶装置及びその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200453A (ja) 1983-04-27 1984-11-13 Hitachi Ltd 半導体装置の製造方法
JPH01212802A (ja) * 1988-02-22 1989-08-25 Hitachi Ltd ボイラの蒸気温度制御装置
JP2695185B2 (ja) * 1988-05-02 1997-12-24 株式会社日立製作所 半導体集積回路装置及びその製造方法
FR2658951B1 (fr) * 1990-02-23 1992-05-07 Bonis Maurice Procede de fabrication d'un circuit integre pour filiere analogique rapide utilisant des lignes d'interconnexions locales en siliciure.
US5237187A (en) * 1990-11-30 1993-08-17 Hitachi, Ltd. Semiconductor memory circuit device and method for fabricating same
TW297158B (enExample) 1994-05-27 1997-02-01 Hitachi Ltd
JP3535615B2 (ja) * 1995-07-18 2004-06-07 株式会社ルネサステクノロジ 半導体集積回路装置
JPH09260510A (ja) 1996-01-17 1997-10-03 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH1098162A (ja) * 1996-09-20 1998-04-14 Hitachi Ltd 半導体集積回路装置の製造方法
JP3599504B2 (ja) * 1996-11-27 2004-12-08 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP3597334B2 (ja) * 1996-12-17 2004-12-08 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP3718058B2 (ja) * 1998-06-17 2005-11-16 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2001060672A (ja) * 1999-08-20 2001-03-06 Mitsubishi Electric Corp エッチング方法およびエッチングマスク
JP2001085625A (ja) * 1999-09-13 2001-03-30 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2001127270A (ja) * 1999-10-27 2001-05-11 Nec Corp 半導体装置及びその製造方法
KR100574715B1 (ko) 2001-01-30 2006-04-28 가부시키가이샤 히타치세이사쿠쇼 반도체 집적 회로 장치

Also Published As

Publication number Publication date
KR100869620B1 (ko) 2008-11-21
JP2003007978A (ja) 2003-01-10
US6635937B2 (en) 2003-10-21
US20030082877A1 (en) 2003-05-01
US7022563B2 (en) 2006-04-04
US20020190399A1 (en) 2002-12-19
US20040211993A1 (en) 2004-10-28
US6762444B2 (en) 2004-07-13
KR20020096873A (ko) 2002-12-31
TW552702B (en) 2003-09-11

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