TW552702B - Semiconductor integrated circuit device and a method of manufacturing the same - Google Patents

Semiconductor integrated circuit device and a method of manufacturing the same Download PDF

Info

Publication number
TW552702B
TW552702B TW091108120A TW91108120A TW552702B TW 552702 B TW552702 B TW 552702B TW 091108120 A TW091108120 A TW 091108120A TW 91108120 A TW91108120 A TW 91108120A TW 552702 B TW552702 B TW 552702B
Authority
TW
Taiwan
Prior art keywords
insulating film
aforementioned
film
pair
capacitor
Prior art date
Application number
TW091108120A
Other languages
English (en)
Chinese (zh)
Inventor
Fumio Ootsuka
Yusuke Nonaka
Satoshi Shimamoto
Sohei Omori
Hideto Kazama
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW552702B publication Critical patent/TW552702B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW091108120A 2001-06-18 2002-04-19 Semiconductor integrated circuit device and a method of manufacturing the same TW552702B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001183098A JP4083397B2 (ja) 2001-06-18 2001-06-18 半導体集積回路装置

Publications (1)

Publication Number Publication Date
TW552702B true TW552702B (en) 2003-09-11

Family

ID=19023090

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091108120A TW552702B (en) 2001-06-18 2002-04-19 Semiconductor integrated circuit device and a method of manufacturing the same

Country Status (4)

Country Link
US (3) US6635937B2 (enExample)
JP (1) JP4083397B2 (enExample)
KR (1) KR100869620B1 (enExample)
TW (1) TW552702B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100574715B1 (ko) 2001-01-30 2006-04-28 가부시키가이샤 히타치세이사쿠쇼 반도체 집적 회로 장치
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
JP2004253730A (ja) * 2003-02-21 2004-09-09 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP4579506B2 (ja) * 2003-06-06 2010-11-10 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4531615B2 (ja) * 2005-02-03 2010-08-25 ルネサスエレクトロニクス株式会社 半導体集積回路装置
CN1893085A (zh) * 2005-07-07 2007-01-10 松下电器产业株式会社 半导体装置及其制造方法
US7514757B2 (en) * 2006-08-31 2009-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Memory formation with reduced metallization layers
JP2009231445A (ja) * 2008-03-21 2009-10-08 Toshiba Corp 半導体記憶装置
JP2010118597A (ja) * 2008-11-14 2010-05-27 Nec Electronics Corp 半導体装置
EP2417123A2 (en) 2009-04-06 2012-02-15 Agios Pharmaceuticals, Inc. Therapeutic compositions and related methods of use
DK2427441T3 (en) 2009-05-04 2017-03-20 Agios Pharmaceuticals Inc PKM2 Activators for use in the treatment of cancer
EP2448581B1 (en) 2009-06-29 2016-12-07 Agios Pharmaceuticals, Inc. Therapeutic compositions and related methods of use
CA2944788C (en) 2009-06-29 2023-08-22 Agios Pharmaceuticals, Inc. Compounds, and compositions thereof, which modulate pyruvate kinase m2, and methods of making same
JP5837091B2 (ja) 2010-12-17 2015-12-24 アジオス ファーマシューティカルズ， インコーポレイテッド ピルビン酸キナーゼｍ２（ｐｋｍ２）調節剤としての新規ｎ−（４−（アゼチジン−１−カルボニル）フェニル）−（ヘテロ−）アリールスルホンアミド誘導体
JP6092118B2 (ja) 2010-12-21 2017-03-08 アジオス ファーマシューティカルズ， インコーポレイテッド ニ環式ｐｋｍ２活性化剤
TWI549947B (zh) 2010-12-29 2016-09-21 阿吉歐斯製藥公司 治療化合物及組成物
KR101873543B1 (ko) 2011-05-03 2018-07-02 아지오스 파마슈티컬스 아이엔씨. 치료에 사용하기 위한 피루베이트 키나아제 활성제
US8947902B2 (en) 2012-03-06 2015-02-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory and method of making the same
US9349436B2 (en) 2012-03-06 2016-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory and method of making the same
DK3307271T3 (da) 2015-06-11 2023-10-09 Agios Pharmaceuticals Inc Fremgangsmåder til anvendelse af pyruvatkinase-aktivatorer
FR3055463A1 (fr) * 2016-08-31 2018-03-02 St Microelectronics Crolles 2 Sas Element de memorisation durci
KR102336827B1 (ko) 2017-06-08 2021-12-09 삼성전자주식회사 반도체 장치
KR102360410B1 (ko) 2017-08-30 2022-02-08 삼성전자주식회사 반도체 장치
JP2021136301A (ja) * 2020-02-26 2021-09-13 キオクシア株式会社 不揮発性半導体記憶装置及びその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200453A (ja) 1983-04-27 1984-11-13 Hitachi Ltd 半導体装置の製造方法
JPH01212802A (ja) * 1988-02-22 1989-08-25 Hitachi Ltd ボイラの蒸気温度制御装置
JP2695185B2 (ja) * 1988-05-02 1997-12-24 株式会社日立製作所 半導体集積回路装置及びその製造方法
FR2658951B1 (fr) * 1990-02-23 1992-05-07 Bonis Maurice Procede de fabrication d'un circuit integre pour filiere analogique rapide utilisant des lignes d'interconnexions locales en siliciure.
US5237187A (en) * 1990-11-30 1993-08-17 Hitachi, Ltd. Semiconductor memory circuit device and method for fabricating same
TW297158B (enExample) 1994-05-27 1997-02-01 Hitachi Ltd
JP3535615B2 (ja) * 1995-07-18 2004-06-07 株式会社ルネサステクノロジ 半導体集積回路装置
JPH09260510A (ja) 1996-01-17 1997-10-03 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH1098162A (ja) * 1996-09-20 1998-04-14 Hitachi Ltd 半導体集積回路装置の製造方法
JP3599504B2 (ja) * 1996-11-27 2004-12-08 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP3597334B2 (ja) * 1996-12-17 2004-12-08 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP3718058B2 (ja) * 1998-06-17 2005-11-16 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2001060672A (ja) * 1999-08-20 2001-03-06 Mitsubishi Electric Corp エッチング方法およびエッチングマスク
JP2001085625A (ja) * 1999-09-13 2001-03-30 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2001127270A (ja) * 1999-10-27 2001-05-11 Nec Corp 半導体装置及びその製造方法
KR100574715B1 (ko) 2001-01-30 2006-04-28 가부시키가이샤 히타치세이사쿠쇼 반도체 집적 회로 장치

Also Published As

Publication number Publication date
KR100869620B1 (ko) 2008-11-21
JP2003007978A (ja) 2003-01-10
US6635937B2 (en) 2003-10-21
US20030082877A1 (en) 2003-05-01
US7022563B2 (en) 2006-04-04
US20020190399A1 (en) 2002-12-19
JP4083397B2 (ja) 2008-04-30
US20040211993A1 (en) 2004-10-28
US6762444B2 (en) 2004-07-13
KR20020096873A (ko) 2002-12-31

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