KR100869620B1 - 반도체 집적회로장치 및 그 제조방법 - Google Patents

반도체 집적회로장치 및 그 제조방법 Download PDF

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Publication number
KR100869620B1
KR100869620B1 KR1020020025475A KR20020025475A KR100869620B1 KR 100869620 B1 KR100869620 B1 KR 100869620B1 KR 1020020025475 A KR1020020025475 A KR 1020020025475A KR 20020025475 A KR20020025475 A KR 20020025475A KR 100869620 B1 KR100869620 B1 KR 100869620B1
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South Korea
Prior art keywords
channel misfet
insulating film
channel
conductive
misfet
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Expired - Fee Related
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KR1020020025475A
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English (en)
Korean (ko)
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KR20020096873A (ko
Inventor
오오츠카후미오
노나카유우스케
시마모토사토시
오오모리소우헤이
카자마히데토
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20020096873A publication Critical patent/KR20020096873A/ko
Application granted granted Critical
Publication of KR100869620B1 publication Critical patent/KR100869620B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020020025475A 2001-06-18 2002-05-09 반도체 집적회로장치 및 그 제조방법 Expired - Fee Related KR100869620B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00183098 2001-06-18
JP2001183098A JP4083397B2 (ja) 2001-06-18 2001-06-18 半導体集積回路装置

Publications (2)

Publication Number Publication Date
KR20020096873A KR20020096873A (ko) 2002-12-31
KR100869620B1 true KR100869620B1 (ko) 2008-11-21

Family

ID=19023090

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020025475A Expired - Fee Related KR100869620B1 (ko) 2001-06-18 2002-05-09 반도체 집적회로장치 및 그 제조방법

Country Status (4)

Country Link
US (3) US6635937B2 (enExample)
JP (1) JP4083397B2 (enExample)
KR (1) KR100869620B1 (enExample)
TW (1) TW552702B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100574715B1 (ko) 2001-01-30 2006-04-28 가부시키가이샤 히타치세이사쿠쇼 반도체 집적 회로 장치
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
JP2004253730A (ja) * 2003-02-21 2004-09-09 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP4579506B2 (ja) * 2003-06-06 2010-11-10 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4531615B2 (ja) * 2005-02-03 2010-08-25 ルネサスエレクトロニクス株式会社 半導体集積回路装置
CN1893085A (zh) * 2005-07-07 2007-01-10 松下电器产业株式会社 半导体装置及其制造方法
US7514757B2 (en) * 2006-08-31 2009-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Memory formation with reduced metallization layers
JP2009231445A (ja) * 2008-03-21 2009-10-08 Toshiba Corp 半導体記憶装置
JP2010118597A (ja) * 2008-11-14 2010-05-27 Nec Electronics Corp 半導体装置
EP2417123A2 (en) 2009-04-06 2012-02-15 Agios Pharmaceuticals, Inc. Therapeutic compositions and related methods of use
DK2427441T3 (en) 2009-05-04 2017-03-20 Agios Pharmaceuticals Inc PKM2 Activators for use in the treatment of cancer
EP2448581B1 (en) 2009-06-29 2016-12-07 Agios Pharmaceuticals, Inc. Therapeutic compositions and related methods of use
CA2944788C (en) 2009-06-29 2023-08-22 Agios Pharmaceuticals, Inc. Compounds, and compositions thereof, which modulate pyruvate kinase m2, and methods of making same
JP5837091B2 (ja) 2010-12-17 2015-12-24 アジオス ファーマシューティカルズ， インコーポレイテッド ピルビン酸キナーゼｍ２（ｐｋｍ２）調節剤としての新規ｎ−（４−（アゼチジン−１−カルボニル）フェニル）−（ヘテロ−）アリールスルホンアミド誘導体
JP6092118B2 (ja) 2010-12-21 2017-03-08 アジオス ファーマシューティカルズ， インコーポレイテッド ニ環式ｐｋｍ２活性化剤
TWI549947B (zh) 2010-12-29 2016-09-21 阿吉歐斯製藥公司 治療化合物及組成物
KR101873543B1 (ko) 2011-05-03 2018-07-02 아지오스 파마슈티컬스 아이엔씨. 치료에 사용하기 위한 피루베이트 키나아제 활성제
US8947902B2 (en) 2012-03-06 2015-02-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory and method of making the same
US9349436B2 (en) 2012-03-06 2016-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory and method of making the same
DK3307271T3 (da) 2015-06-11 2023-10-09 Agios Pharmaceuticals Inc Fremgangsmåder til anvendelse af pyruvatkinase-aktivatorer
FR3055463A1 (fr) * 2016-08-31 2018-03-02 St Microelectronics Crolles 2 Sas Element de memorisation durci
KR102336827B1 (ko) 2017-06-08 2021-12-09 삼성전자주식회사 반도체 장치
KR102360410B1 (ko) 2017-08-30 2022-02-08 삼성전자주식회사 반도체 장치
JP2021136301A (ja) * 2020-02-26 2021-09-13 キオクシア株式会社 不揮発性半導体記憶装置及びその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01212802A (ja) * 1988-02-22 1989-08-25 Hitachi Ltd ボイラの蒸気温度制御装置
JPH10163440A (ja) * 1996-11-27 1998-06-19 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH10178109A (ja) * 1996-12-17 1998-06-30 Hitachi Ltd 半導体集積回路装置およびその製造方法
US5780910A (en) * 1995-07-18 1998-07-14 Hitachi, Ltd. SRAM with stacked capacitor spaced from gate electrodes
JP2000012802A (ja) * 1998-06-17 2000-01-14 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
JP2001127270A (ja) * 1999-10-27 2001-05-11 Nec Corp 半導体装置及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200453A (ja) 1983-04-27 1984-11-13 Hitachi Ltd 半導体装置の製造方法
JP2695185B2 (ja) * 1988-05-02 1997-12-24 株式会社日立製作所 半導体集積回路装置及びその製造方法
FR2658951B1 (fr) * 1990-02-23 1992-05-07 Bonis Maurice Procede de fabrication d'un circuit integre pour filiere analogique rapide utilisant des lignes d'interconnexions locales en siliciure.
US5237187A (en) * 1990-11-30 1993-08-17 Hitachi, Ltd. Semiconductor memory circuit device and method for fabricating same
TW297158B (enExample) 1994-05-27 1997-02-01 Hitachi Ltd
JPH09260510A (ja) 1996-01-17 1997-10-03 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH1098162A (ja) * 1996-09-20 1998-04-14 Hitachi Ltd 半導体集積回路装置の製造方法
JP2001060672A (ja) * 1999-08-20 2001-03-06 Mitsubishi Electric Corp エッチング方法およびエッチングマスク
JP2001085625A (ja) * 1999-09-13 2001-03-30 Hitachi Ltd 半導体集積回路装置およびその製造方法
KR100574715B1 (ko) 2001-01-30 2006-04-28 가부시키가이샤 히타치세이사쿠쇼 반도체 집적 회로 장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01212802A (ja) * 1988-02-22 1989-08-25 Hitachi Ltd ボイラの蒸気温度制御装置
US5780910A (en) * 1995-07-18 1998-07-14 Hitachi, Ltd. SRAM with stacked capacitor spaced from gate electrodes
JPH10163440A (ja) * 1996-11-27 1998-06-19 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH10178109A (ja) * 1996-12-17 1998-06-30 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2000012802A (ja) * 1998-06-17 2000-01-14 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
JP2001127270A (ja) * 1999-10-27 2001-05-11 Nec Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JP2003007978A (ja) 2003-01-10
US6635937B2 (en) 2003-10-21
US20030082877A1 (en) 2003-05-01
US7022563B2 (en) 2006-04-04
US20020190399A1 (en) 2002-12-19
JP4083397B2 (ja) 2008-04-30
US20040211993A1 (en) 2004-10-28
US6762444B2 (en) 2004-07-13
KR20020096873A (ko) 2002-12-31
TW552702B (en) 2003-09-11

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