JP2002313757A - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法

Info

Publication number
JP2002313757A
JP2002313757A JP2001118413A JP2001118413A JP2002313757A JP 2002313757 A JP2002313757 A JP 2002313757A JP 2001118413 A JP2001118413 A JP 2001118413A JP 2001118413 A JP2001118413 A JP 2001118413A JP 2002313757 A JP2002313757 A JP 2002313757A
Authority
JP
Japan
Prior art keywords
insulating film
film
polishing
semiconductor wafer
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001118413A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002313757A5 (https=
Inventor
Toshiyuki Arai
利行 荒井
Akinari Kawai
亮成 河合
Yoji Tsuchiyama
洋史 土山
Fumiyuki Kanai
史幸 金井
Shinichi Nakabayashi
伸一 中林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001118413A priority Critical patent/JP2002313757A/ja
Priority to TW091103286A priority patent/TW567550B/zh
Priority to US10/085,063 priority patent/US6979649B2/en
Priority to KR1020020011898A priority patent/KR100873759B1/ko
Publication of JP2002313757A publication Critical patent/JP2002313757A/ja
Priority to US11/167,253 priority patent/US7250365B2/en
Publication of JP2002313757A5 publication Critical patent/JP2002313757A5/ja
Priority to US11/778,494 priority patent/US7718526B2/en
Priority to US12/781,816 priority patent/US7977234B2/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/038—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Element Separation (AREA)
JP2001118413A 2001-04-17 2001-04-17 半導体集積回路装置の製造方法 Pending JP2002313757A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001118413A JP2002313757A (ja) 2001-04-17 2001-04-17 半導体集積回路装置の製造方法
TW091103286A TW567550B (en) 2001-04-17 2002-02-25 Method of manufacturing semiconductor integrated circuit device
US10/085,063 US6979649B2 (en) 2001-04-17 2002-03-01 Fabrication method of semiconductor integrated circuit device
KR1020020011898A KR100873759B1 (ko) 2001-04-17 2002-03-06 반도체 집적 회로 장치의 제조 방법
US11/167,253 US7250365B2 (en) 2001-04-17 2005-06-28 Fabrication method of semiconductor integrated circuit device
US11/778,494 US7718526B2 (en) 2001-04-17 2007-07-16 Fabrication method of semiconductor integrated circuit device
US12/781,816 US7977234B2 (en) 2001-04-17 2010-05-18 Fabrication method of semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001118413A JP2002313757A (ja) 2001-04-17 2001-04-17 半導体集積回路装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007179460A Division JP4966116B2 (ja) 2007-07-09 2007-07-09 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002313757A true JP2002313757A (ja) 2002-10-25
JP2002313757A5 JP2002313757A5 (https=) 2005-07-21

Family

ID=18968809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001118413A Pending JP2002313757A (ja) 2001-04-17 2001-04-17 半導体集積回路装置の製造方法

Country Status (4)

Country Link
US (4) US6979649B2 (https=)
JP (1) JP2002313757A (https=)
KR (1) KR100873759B1 (https=)
TW (1) TW567550B (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004152920A (ja) * 2002-10-30 2004-05-27 Fujitsu Ltd 半導体装置の製造方法及び半導体製造工程の管理方法
JP2006229041A (ja) * 2005-02-18 2006-08-31 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2007208161A (ja) * 2006-02-06 2007-08-16 Renesas Technology Corp 半導体装置の製造方法および半導体基板
JP2009200501A (ja) * 2009-03-13 2009-09-03 Fujitsu Microelectronics Ltd 半導体装置の製造方法
JP2009272560A (ja) * 2008-05-09 2009-11-19 Fujitsu Microelectronics Ltd 半導体装置の製造方法

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004152920A (ja) * 2002-10-30 2004-05-27 Fujitsu Ltd 半導体装置の製造方法及び半導体製造工程の管理方法
JP2006229041A (ja) * 2005-02-18 2006-08-31 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2007208161A (ja) * 2006-02-06 2007-08-16 Renesas Technology Corp 半導体装置の製造方法および半導体基板
JP2009272560A (ja) * 2008-05-09 2009-11-19 Fujitsu Microelectronics Ltd 半導体装置の製造方法
JP2009200501A (ja) * 2009-03-13 2009-09-03 Fujitsu Microelectronics Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
US20050250331A1 (en) 2005-11-10
KR20020081544A (ko) 2002-10-28
US7250365B2 (en) 2007-07-31
US6979649B2 (en) 2005-12-27
US7977234B2 (en) 2011-07-12
US20070259522A1 (en) 2007-11-08
US20100227474A1 (en) 2010-09-09
US20020160610A1 (en) 2002-10-31
US7718526B2 (en) 2010-05-18
TW567550B (en) 2003-12-21
KR100873759B1 (ko) 2008-12-15

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