JP2002217416A5 - - Google Patents

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Publication number
JP2002217416A5
JP2002217416A5 JP2001007191A JP2001007191A JP2002217416A5 JP 2002217416 A5 JP2002217416 A5 JP 2002217416A5 JP 2001007191 A JP2001007191 A JP 2001007191A JP 2001007191 A JP2001007191 A JP 2001007191A JP 2002217416 A5 JP2002217416 A5 JP 2002217416A5
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JP
Japan
Prior art keywords
main surface
field effect
effect transistor
semiconductor
source
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JP2001007191A
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English (en)
Japanese (ja)
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JP2002217416A (ja
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Priority to JP2001007191A priority Critical patent/JP2002217416A/ja
Priority claimed from JP2001007191A external-priority patent/JP2002217416A/ja
Priority to US10/046,261 priority patent/US6700793B2/en
Publication of JP2002217416A publication Critical patent/JP2002217416A/ja
Priority to US10/742,888 priority patent/US6842346B2/en
Publication of JP2002217416A5 publication Critical patent/JP2002217416A5/ja
Pending legal-status Critical Current

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JP2001007191A 2001-01-16 2001-01-16 半導体装置 Pending JP2002217416A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001007191A JP2002217416A (ja) 2001-01-16 2001-01-16 半導体装置
US10/046,261 US6700793B2 (en) 2001-01-16 2002-01-16 Semiconductor device
US10/742,888 US6842346B2 (en) 2001-01-16 2003-12-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001007191A JP2002217416A (ja) 2001-01-16 2001-01-16 半導体装置

Publications (2)

Publication Number Publication Date
JP2002217416A JP2002217416A (ja) 2002-08-02
JP2002217416A5 true JP2002217416A5 (enExample) 2005-08-18

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Family Applications (1)

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JP2001007191A Pending JP2002217416A (ja) 2001-01-16 2001-01-16 半導体装置

Country Status (2)

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US (2) US6700793B2 (enExample)
JP (1) JP2002217416A (enExample)

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JP7088132B2 (ja) 2019-07-10 2022-06-21 株式会社デンソー 半導体装置及び電子装置
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CN112601322B (zh) * 2020-12-16 2023-03-14 成都芯进电子有限公司 一种降压型同步整流led恒流控制电路
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