CN203179873U - 电力开关装置 - Google Patents

电力开关装置 Download PDF

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CN203179873U
CN203179873U CN2013200929841U CN201320092984U CN203179873U CN 203179873 U CN203179873 U CN 203179873U CN 2013200929841 U CN2013200929841 U CN 2013200929841U CN 201320092984 U CN201320092984 U CN 201320092984U CN 203179873 U CN203179873 U CN 203179873U
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electric crystal
mentioned
electric
power switch
switch unit
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孟祥集
张天健
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UPI Semiconductor Corp
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Ubiq Semiconductor Corp
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Abstract

本实用新型公开一种电力开关装置。电力开关装置包含基板、第一电晶体及第二电晶体。基板具有第一焊垫、第二焊垫及第三焊垫。第一电晶体具有第一表面与第二表面。第一电晶体的源极形成于第一电晶体的第一表面。第二电晶体为横向扩散金属氧化物半导体场效电晶体。第二电晶体具有第一表面与第二表面。第二电晶体的汲极形成于第二电晶体的第一表面。第一电晶体的第二表面耦接第一焊垫，第二电晶体的第二表面耦接第二焊垫，第三焊垫耦接第一电晶体的源极与第二电晶体的汲极。

Description

电力开关装置
技术领域
本实用新型与半导体元件封装有关，特别是关于一种电力开关装置。 
背景技术
一般而言，传统的电力开关封装结构中所采用的金属氧化物半导体场效电晶体(Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET)均为具有沟槽(trench)结构的金属氧化物半导体场效电晶体。也就是说，传统的电力开关封装结构中的金属氧化物半导体场效电晶体的源极设置于上方而其汲极则设置于下方。 
请参照图1A及图1B，图1A及图1B分别绘示传统的降压型转换器(buck converter)封装结构的上视图及剖面视图。如图所示，位于高侧(high side)的第一电晶体M1与位于低侧(low side)的第二电晶体M2均为传统的具有沟槽结构的金属氧化物半导体场效电晶体，第一电晶体M1与第二电晶体M2的源极S1、S2均设置于上方且第一电晶体M1与第二电晶体M2的汲极D1、D2则均设置于下方。 
由于第一电晶体M1的源极S1设置于上方，但第二电晶体M2的汲极D2设置于下方，为了要将第一电晶体M1的源极S1与第二电晶体M2的汲极D2相连，即需如同图1B所示通过导线W形成第一电晶体M1的源极S1与第二电晶体M2的汲极D2之间的耦接，以形成多晶片模块(Multi-Chip Module, MCM)型态的封装结构。然而，采用上述导线耦接方式不仅会增加电路布局及后段工艺的复杂度，亦会导致漏感(leakage conductance)变大。此外，对于印刷电路板PCB的电路布局而言，由于第二电晶体M2的源极S2设置于第二电晶体M2的上方，导致其散热效果差。 
因此，本实用新型提出一种电力开关装置，以解决现有技术所遭遇到的上述种种问题。 
实用新型内容
本实用新型的一范畴在于提出一种电力开关装置。于一具体实施例中，电力开关装置包含基板、第一电晶体及第二电晶体。基板具有第一焊垫、第二焊垫及第三焊垫。第一电晶体具有第一表面与第二表面。第一电晶体的源极形成于第一电晶体的第一表面。第二电晶体为横向扩散金属氧化物半导体场效电晶体。第二电晶体具有第一表面与第二表面。第二电晶体的汲极形成于第二电晶体的第一表面。第一电晶体的第二表面耦接第一焊垫，第二电晶体的第二表面耦接第二焊垫，第三焊垫耦接第一电晶体的源极与第二电晶体的汲极。 
于一实施例中，第三焊垫通过带式连接(ribbon bond)的方式来耦接第一电晶体的源极与第二电晶体的汲极。 
于一实施例中，第一电晶体为具有沟槽结构或平面结构的金属氧化物半导体场效电晶体。 
于一实施例中，第一电晶体的汲极形成于第一电晶体的第二表面。 
于一实施例中，第二电晶体的源极形成于第二电晶体的第二表面。 
于一实施例中，第二焊垫耦接一接地端。 
于一实施例中，第一电晶体的源极与第二电晶体的汲极通过导电部彼此耦接。 
于一实施例中，电力开关装置还包含控制器，分别耦接第一电晶体与第二电晶体。 
于一实施例中，电力开关装置还包含封装胶体，用以包覆第一电晶体与第二电晶体。 
相较于现有技术，本实用新型所公开的电力开关装置是采用与传统不同的横向扩散金属氧化物半导体(Laterally Diffused Metal Oxide Semiconductor,  LDMOS)场效电晶体作为位于低侧(low side)的电晶体，以形成多晶片模块(Multi-Chip Module, MCM)型态的封装结构，可应用于全桥(full bridge)、半桥(half bridge)或降压型转换器(buck converter)等电路结构。LDMOS场效电晶体本身即具有下列优点：热稳定性佳、频率稳定性高、高增益、耐久性佳、低噪音、低回馈电容、低汲极-源极导通电阻值(on-resistance, RDS(ON))、偏流电路简单、输入阻抗恒定及低热阻等。 
由于本实用新型的电力开关装置采用带式连接(ribbon bond)等方式耦接位于高侧的电晶体的源极与位于低侧的电晶体的汲极，故能够有效降低传统上采用导线耦接两电晶体所导致的漏感，并可大幅简化电路布局及后段工艺的复杂度。再者，对于印刷电路板的电路布局而言，由于位于低侧的电晶体的源极设置于下方，故其相对应的接地垫(ground pad)面积远较现有技术来得大，使得其散热效率亦能获得大幅提升。 
关于本实用新型的优点与精神可以通过以下的实用新型详述及所附图式得到更的了解。 
附图说明
图1A及图1B分别绘示传统的降压型转换器封装结构的上视图及剖面视图。 
图2A及图2B分别绘示根据本实用新型的一较佳具体实施例的电力开关装置的上视图及剖面视图。 
图2C绘示包含串接的两电晶体与控制器的降压型转换器电路。 
图2D绘示控制器采用带式连接方式分别耦接第一电晶体及第二电晶体，并且第一电晶体及第二电晶体之间亦采用带式连接方式耦接的上视图。 
图2E绘示控制器还通过铝带耦接第二电晶体的汲极与导线架，由此增加第二电晶体的导通内阻的上视图。 
图3A至图3G分别绘示制造电力开关装置于基板上的流程图。 
图4A及图4B分别绘示根据本实用新型的另一具体实施例的电力开关 装置的上视图及剖面视图。 
图5A及图5B分别绘示根据本实用新型的另一具体实施例的电力开关装置的上视图及剖面视图。 
主要元件符号说明： 
M1：第一电晶体         M2：第二电晶体 
S1、S2：源极            D1、D2：汲极  
W：导线               PCB：基板(印刷电路板)  
2、4、5：电力开关装置   R：焊料 
C、C’、C”：导电部      GL：封装胶体  
G1、G2：闸极           R1：第一焊垫 
R2：第二焊垫            R3：第三焊垫 
LF1、LF2、LF：导线架  A、A’：接地垫面积 
20：控制器              VIN：输入电压 
d1：二极体              L1：电感器 
C1：电容器              VOUT：输出电压 
具体实施方式
根据本实用新型的一较佳具体实施例为一种电力开关装置。于此实施例中，上述电力开关装置具有多晶片模块(Multi-Chip Module, MCM)型态的封装结构，可应用于全桥(full bridge)、半桥(half bridge)或降压型转换器(buck converter)等电路结构，但不以此为限。 
请参照图2A及图2B，图2A及图2B分别绘示此实施例的电力开关装置的上视图及剖面视图。需说明的是，为了显示方便起见，图2A省略了封装胶体的部分。如图所示，电力开关装置2设置于基板PCB(例如印刷电路板)上。基板PCB具有第一焊垫R1、第二焊垫R2及第三焊垫R3。第二焊垫R2耦接一接地端。电力开关装置2包含有位于高侧(high side)的第一电晶体 M1、位于低侧(low side)的第二电晶体M2、导电部C及封装胶体GL。 
于此实施例中，位于高侧的第一电晶体M1采用的是具有沟槽(trench)结构或平面(planar)结构的金属氧化物半导体场效电晶体；位于低侧的第二电晶体M2采用的是横向扩散金属氧化物半导体(Laterally Diffused Metal Oxide Semiconductor, LDMOS)场效电晶体。相较于传统的金属氧化物半导体场效电晶体，位于低侧的第二电晶体M2所采用的LDMOS场效电晶体本身即具有下列优点：热稳定性佳、频率稳定性高、高增益、耐久性佳、低噪音、低回馈电容、低汲极-源极导通电阻值(RDS(ON))、偏流电路简单、输入阻抗恒定及低热阻等。 
位于高侧的第一电晶体M1具有闸极G1、源极S1及汲极D1；位于低侧的第二电晶体M2具有闸极G2、源极S2及汲极D2。位于高侧的第一电晶体M1的闸极G1与源极S1形成于第一电晶体M1的第一表面(较远离基板PCB)，而其汲极D1形成于第一电晶体M1的第二表面(较靠近基板PCB)；位于低侧的第二电晶体M2的闸极G2与汲极D2形成于第二电晶体M2的第一表面(较远离基板PCB)，而其源极S2形成于第二电晶体M2的第二表面(较靠近基板PCB)。 
导线架LF1设置于第一电晶体M1的汲极D1与基板PCB的第一焊垫R1之间。导线架LF2设置于第二电晶体M2的源极S2与基板PCB的第二焊垫R2之间。第三焊垫R3通过导线架LF耦接第一电晶体M1的源极S1与第二电晶体M2的汲极D2。 
于此实施例中，位于高侧的第一电晶体M1的源极S1形成于第一电晶体M1的第一表面且位于低侧的第二电晶体M2的汲极D2形成于第二电晶体M2的第一表面，亦即电力开关装置2内的欲形成耦接的第一电晶体M1的源极S1与第二电晶体M2的汲极D2均位于电晶体上方的第一表面，此实施例中的导电部C采用的是材质较软的铝带(Aluminum ribbon)，并可通过带式连接(ribbon bond)的方式耦接第一电晶体M1的源极S1上、第二电晶体M2的汲极D2上以及导线架LF上，以形成多晶片模块(Multi-Chip Module,  MCM)型态的封装结构。 
由于第一电晶体M1的源极S1与第二电晶体M2的汲极D2之间采用铝带连接方式耦接，故能够有效降低传统上采用导线耦接两电晶体所导致的漏感，并可大幅简化电路布局及后段工艺的复杂度。至于封装胶体GL用以将第一电晶体M1、第二电晶体M2及导电部C等元件包覆于导线架上。实际上，封装胶体GL可以是树脂或其他塑胶封装材料，并无特定的限制。 
如图2B所示，第一电晶体M1的汲极D1与基板PCB之间设置有导线架(lead frame)LF1；第二电晶体M2的源极S2与基板PCB之间设置有导线架LF2；导电部C与基板PCB之间设置有导线架LF。于此实施例中，导线架LF1、LF2及LF由铜构成，但不以此为限。此外，导线架LF1与基板PCB之间、导线架LF2与基板PCB之间以及导线架LF与基板PCB之间均设置有焊料(solder)R，以增进彼此间的连接性。 
位于低侧的第二电晶体M2的源极S2设置于第二电晶体M2的下方，可直接通过导线架LF2耦接至基板PCB，因此，如图2B所示，导线架LF2相对应的接地垫面积A’将会远较图1B所示的现有技术中的接地垫面积A来得大，故能大幅提升其散热效率。 
至于图2C则绘示包含上述串接的两电晶体M1及M2与控制器20的降压型转换器电路的一实施例。如图2C所示，控制器20分别耦接至位于高端的第一电晶体M1、位于低端的第二电晶体M2以及输入电压VIN与第一电晶体M1之间。二极体d1的两端分别耦接至第一电晶体M1与第二电晶体M2之间以及第二电晶体M2与接地端之间。电感器L1的两端分别耦接至第一电晶体M1与第二电晶体M2之间以及输出电压VOUT。电容器C1的两端分别耦接至电感器L1与输出电压VOUT之间以及接地端。在一些实施例中，控制器20可以是含有驱动器的脉宽调变控制器(PWM controller)或驱动器(Driver)，但不以此为限。 
图2D则绘示控制器20采用带式连接(ribbon bond)方式分别耦接第一电晶体M1及第二电晶体M2，第一电晶体M1及第二电晶体M2之间亦采用 带式连接方式耦接。如图2D所示，控制器20通过铝带C分别耦接第一电晶体M1的闸极G1及第二电晶体M2的闸极G2，并且第一电晶体M1的源极S1与第二电晶体M2的汲极D2之间亦通过铝带C耦接。在其他实施例中，控制器20可通过打线连接(wire bond)方式来分别耦接第一电晶体M1的闸极G1及第二电晶体M2的闸极G2。 
至于图2E则绘示控制器20通过铝带C分别耦接第一电晶体M1的闸极G1及第二电晶体M2的闸极G2，在其他实施例中，控制器20可通过打线连接(wire bond)方式来分别耦接第一电晶体M1的闸极G1及第二电晶体M2的闸极G2。此外，第一电晶体M1的源极S1与第二电晶体M2的汲极D2之间亦通过铝带C耦接之外，第二电晶体M2的汲极D2还通过另一铝带C耦接导线架LF，由此增加导通内阻(Rds_on)。实际上，上述耦接第二电晶体M2的汲极D2与导线架LF以增加导通内阻的作法亦可应用于本实用新型的其他实施例中。 
接着，将就形成于基板PCB上的电力开关装置2的封装流程进行说明。首先，如图3A所示，分别提供导线架LF1、LF2及LF。接着，如图3B及图3C所示，分别于导线架LF1及LF2上设置第一电晶体M1及第二电晶体M2。 
接着，如图3D所示，将导电部C(铝带)设置于第一电晶体M1的源极S1上、第二电晶体M2的汲极D2上及导线架LF上。之后，如图3E所示，使用封装胶体GL将图3D所示的各元件包覆起来，并且封装胶体GL的底部与导线架LF1、LF2及LF的底部对齐。然后，如图3F所示，分别形成第一焊料R1、第二焊料R2及第三焊料R3于导线架LF1、LF2及LF的底部上，完成电力开关装置2。最后，如图3G所示，将完成的电力开关装置2设置于基板CPB上。 
根据本实用新型的另一较佳具体实施例为一种电力开关装置。于此实施例中，上述电力开关装置具有多晶片模块型态的封装结构，可应用于全桥、半桥或降压型转换器等电路结构，但不以此为限。 
请参照图4A及图4B，图4A及图4B分别绘示此实施例的电力开关装置的上视图及剖面视图。如图所示，此实施例与上述实施例的差异在于：图4A及图4B中的导电部C’是由一铜片或金属薄片构成，导电部C’即可设置于第一电晶体M1的源极S1与第二电晶体M2的汲极D2之上，并且导电部C’与第一电晶体M1的源极S1之间、导电部C’与第二电晶体M2的汲极D2之间以及导电部C’与导线架LF之间设置有焊料(solder)R，以增进彼此间的连接性。 
由于第一电晶体M1的源极S1与第二电晶体M2的汲极D2之间采用金属导电元件进行耦接，故能够有效降低传统上采用导线耦接两电晶体所导致的漏感，并可大幅简化其电路布局及后段工艺的复杂度。此外，位于低侧的第二电晶体M2的源极S2设置于第二电晶体M2的下方，可直接通过导线架LF2耦接至基板PCB，因此，如图4B所示，导线架LF2相对应的接地垫面积A’将会远较图1B所示的现有技术中的接地垫面积A来得大，故能大幅提升其散热效率。 
根据本实用新型的另一具体实施例为一种电力开关装置。于此实施例中，上述电力开关装置具有多晶片模块型态的封装结构，可应用于全桥、半桥或降压型转换器等电路结构，但不以此为限。 
请参照图5A及图5B，图5A及图5B分别绘示此实施例的电力开关装置的上视图及剖面视图。如图所示，此实施例与上述实施例的差异在于：图5A及图5B中的导电部C”采用的是铜线或金线，并可直接焊于第一电晶体M1的源极S1与第二电晶体M2的汲极D2之间，以及第二电晶体M2的汲极D2与导线架LF之间，不需于其间设置任何焊料。 
位于低侧的第二电晶体M2的源极S2设置于第二电晶体M2的下方，可直接通过导线架LF2耦接至基板PCB，因此，如图4B所示，导线架LF2相对应的接地垫面积A’将会远较图1B所示的现有技术中的接地垫面积A来得大，故能大幅提升其散热效率。 
相较于现有技术，本实用新型所公开的电力开关装置是采用与传统不同 的横向扩散金属氧化物半导体(LDMOS)场效电晶体作为位于低侧的电晶体，以形成多晶片模块型态的封装结构，可应用于全桥、半桥或降压型转换器等电路结构中。LDMOS场效电晶体本身即具有下列优点：热稳定性佳、频率稳定性高、高增益、耐久性佳、低噪音、低回馈电容、偏流电路简单、输入阻抗恒定及低热阻等。 
由于本实用新型的电力开关装置采用带式连接等方式耦接位于高侧的电晶体的源极与位于低侧的电晶体的汲极，故能够有效降低传统上采用导线耦接两电晶体所导致的漏感，并可大幅简化电路布局及后段工艺的复杂度。再者，对于印刷电路板的电路布局而言，由于位于低侧的电晶体的源极设置于下方，故其相对应的接地垫面积远较现有技术来得大，使得其散热效率亦能获得大幅提升。 
通过以上较佳具体实施例的详述，希望能更加清楚描述本实用新型的特征与精神，而并非以上述所公开的较佳具体实施例来对本实用新型的范畴加以限制。相反地，其目的是希望能涵盖各种改变及具相等性的安排于本实用新型所欲申请的专利范围的范畴内。 

Claims (9)

1.一种电力开关装置，其特征在于，上述电力开关装置包含：
一基板，具有一第一焊垫、一第二焊垫及一第三焊垫；
一第一电晶体，具有一第一表面与一第二表面，上述第一电晶体的源极形成于上述第一电晶体的上述第一表面；以及
一第二电晶体，为一横向扩散金属氧化物半导体场效电晶体，上述第二电晶体具有一第一表面与一第二表面，上述第二电晶体的汲极形成于上述第二电晶体的上述第一表面，
其中上述第一电晶体的上述第二表面耦接上述第一焊垫，上述第二电晶体的上述第二表面耦接上述第二焊垫，上述第三焊垫耦接上述第一电晶体的源极与上述第二电晶体的汲极。
2.如权利要求1所述的电力开关装置，其特征在于，上述第三焊垫通过带式连接的方式来耦接上述第一电晶体的源极与上述第二电晶体的汲极。
3.如权利要求1所述的电力开关装置，其特征在于，上述第一电晶体为具有沟槽结构或平面结构的金属氧化物半导体场效电晶体。
4.如权利要求1所述的电力开关装置，其特征在于，上述第一电晶体的汲极形成于上述第一电晶体的上述第二表面。
5.如权利要求1所述的电力开关装置，其特征在于，上述第二电晶体的源极形成于上述第二电晶体的上述第二表面。
6.如权利要求1所述的电力开关装置，其特征在于，上述第二焊垫耦接一接地端。
7.如权利要求1所述的电力开关装置，其特征在于，上述第一电晶体的源极与上述第二电晶体的汲极通过一导电部彼此耦接。
8.如权利要求1所述的电力开关装置，其特征在于还包含：
一控制器，分别耦接上述第一电晶体与上述第二电晶体。
9.如权利要求1所述的电力开关装置，其特征在于还包含：
一封装胶体，用以包覆上述第一电晶体与上述第二电晶体。
CN2013200929841U 2012-07-12 2013-02-28 电力开关装置 Expired - Lifetime CN203179873U (zh)

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Cited By (1)

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CN107769555A (zh) * 2016-08-22 2018-03-06 英飞凌科技美国公司 具有在一侧之上的至少五个电连接部的功率转换器

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI708529B (zh) * 2019-09-12 2020-10-21 崧虹科技股份有限公司 具有切換開關之焊接點
EP4261878A1 (en) * 2022-04-13 2023-10-18 Infineon Technologies Austria AG Multi-chip device with gate redistribution structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107769555A (zh) * 2016-08-22 2018-03-06 英飞凌科技美国公司 具有在一侧之上的至少五个电连接部的功率转换器
US10666140B2 (en) 2016-08-22 2020-05-26 Infineon Technologies Americas Corp. Power converter with at least five electrical connections on a side
CN107769555B (zh) * 2016-08-22 2020-06-09 英飞凌科技美国公司 具有在一侧之上的至少五个电连接部的功率转换器

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