JP2002217416A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2002217416A
JP2002217416A JP2001007191A JP2001007191A JP2002217416A JP 2002217416 A JP2002217416 A JP 2002217416A JP 2001007191 A JP2001007191 A JP 2001007191A JP 2001007191 A JP2001007191 A JP 2001007191A JP 2002217416 A JP2002217416 A JP 2002217416A
Authority
JP
Japan
Prior art keywords
source
field
effect transistor
drain
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001007191A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002217416A5 (enExample
Inventor
Kyoichi Takagawa
恭一 高川
Mitsuzo Sakamoto
光造 坂本
Nobuyoshi Matsuura
伸悌 松浦
Masafumi Koyano
雅史 小谷野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001007191A priority Critical patent/JP2002217416A/ja
Priority to US10/046,261 priority patent/US6700793B2/en
Publication of JP2002217416A publication Critical patent/JP2002217416A/ja
Priority to US10/742,888 priority patent/US6842346B2/en
Publication of JP2002217416A5 publication Critical patent/JP2002217416A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/877—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Dc-Dc Converters (AREA)
  • Power Sources (AREA)
JP2001007191A 2001-01-16 2001-01-16 半導体装置 Pending JP2002217416A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001007191A JP2002217416A (ja) 2001-01-16 2001-01-16 半導体装置
US10/046,261 US6700793B2 (en) 2001-01-16 2002-01-16 Semiconductor device
US10/742,888 US6842346B2 (en) 2001-01-16 2003-12-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001007191A JP2002217416A (ja) 2001-01-16 2001-01-16 半導体装置

Publications (2)

Publication Number Publication Date
JP2002217416A true JP2002217416A (ja) 2002-08-02
JP2002217416A5 JP2002217416A5 (enExample) 2005-08-18

Family

ID=18874975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001007191A Pending JP2002217416A (ja) 2001-01-16 2001-01-16 半導体装置

Country Status (2)

Country Link
US (2) US6700793B2 (enExample)
JP (1) JP2002217416A (enExample)

Cited By (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004019352A1 (ja) * 2002-08-26 2004-03-04 Matsushita Electric Industrial Co., Ltd. マルチフェーズ用磁性素子とその製造方法
JP2004342735A (ja) * 2003-05-14 2004-12-02 Renesas Technology Corp 半導体装置および電源システム
US6867494B2 (en) 2002-05-15 2005-03-15 Kabushiki Kaisha Toshiba Semiconductor module
JP2005203584A (ja) * 2004-01-16 2005-07-28 Renesas Technology Corp 半導体装置
JP2006324320A (ja) * 2005-05-17 2006-11-30 Renesas Technology Corp 半導体装置
JP2007116013A (ja) * 2005-10-24 2007-05-10 Renesas Technology Corp 半導体装置及びそれを用いた電源装置
JP2007116012A (ja) * 2005-10-24 2007-05-10 Renesas Technology Corp 半導体装置及びそれを用いた電源装置
JP2007208295A (ja) * 2007-04-27 2007-08-16 Calsonic Kansei Corp Ｐｗｍモジュール
US7271477B2 (en) 2004-04-09 2007-09-18 Kabushiki Kaisha Toshiba Power semiconductor device package
US7295453B2 (en) 2004-11-30 2007-11-13 Renesas Technology Corp. Semiconductor device
JP2008104348A (ja) * 2007-11-05 2008-05-01 Renesas Technology Corp 半導体装置および電源システム
JP2008109853A (ja) * 2007-11-05 2008-05-08 Hitachi Ltd 半導体装置
JP2008112828A (ja) * 2006-10-30 2008-05-15 Mitsubishi Electric Corp 裏面高耐圧集積回路を用いた半導体装置
JP2008187167A (ja) * 2006-12-11 2008-08-14 Internatl Rectifier Corp パワー管理装置
US7436070B2 (en) 2004-04-19 2008-10-14 Renesas Technology Corp. Semiconductor device
US7554181B2 (en) 2004-03-31 2009-06-30 Renesas Technology Corp. Semiconductor device with non-overlapping chip mounting sections
US7579669B2 (en) 2003-12-18 2009-08-25 Kabushiki Kaisha Toshiba Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof
JP2009247042A (ja) * 2008-03-28 2009-10-22 Denso Corp 電力変換装置
US7679173B2 (en) 2006-03-28 2010-03-16 Renesas Technology Corp. Semiconductor device including a DC-DC converter
US7687885B2 (en) 2006-05-30 2010-03-30 Renesas Technology Corp. Semiconductor device with reduced parasitic inductance
WO2010053819A3 (en) * 2008-10-29 2010-07-15 Corning Incorporated In-situ contaminant removal in optical packages
JP2010283236A (ja) * 2009-06-05 2010-12-16 Renesas Electronics Corp 半導体装置
JP2011082535A (ja) * 2010-11-15 2011-04-21 Renesas Electronics Corp 半導体装置
JP2011205020A (ja) * 2010-03-26 2011-10-13 Sanken Electric Co Ltd 半導体装置
JP2011205112A (ja) * 2011-05-23 2011-10-13 Renesas Electronics Corp Ｄｃ／ｄｃコンバータ用半導体装置
JP2012050328A (ja) * 2011-11-21 2012-03-08 Renesas Electronics Corp 半導体装置
US8207558B2 (en) 2004-07-09 2012-06-26 Renesas Electronics Corporation Semiconductor device, DC/DC converter and power supply
JP2012222360A (ja) * 2011-04-11 2012-11-12 Internatl Rectifier Corp Ｉｉｉ−ｖ族トランジスタとｉｖ族横型トランジスタを含む積層複合デバイス
JP2013062540A (ja) * 2012-12-21 2013-04-04 Renesas Electronics Corp 半導体装置
JP2013141035A (ja) * 2013-04-19 2013-07-18 Renesas Electronics Corp 半導体装置
US8519533B2 (en) 2004-07-30 2013-08-27 Renesas Electronics Corporation Semiconductor device including a DC-DC converter with schottky barrier diode
JP2014053742A (ja) * 2012-09-06 2014-03-20 Seiko Epson Corp スイッチング回路及び医療機器
US9245956B2 (en) 2010-05-27 2016-01-26 Rohm Co., Ltd. Electronic circuit comprising unipolar and bipolar devices
JP2016027677A (ja) * 2012-05-29 2016-02-18 日本精工株式会社 半導体モジュール
JP2016515306A (ja) * 2013-03-14 2016-05-26 ヴィシェイ−シリコニックス スタックダイパッケージ
JP2016165017A (ja) * 2016-06-15 2016-09-08 ローム株式会社 高効率モジュール
JP2017005165A (ja) * 2015-06-12 2017-01-05 富士電機株式会社 半導体装置
US9589929B2 (en) 2013-03-14 2017-03-07 Vishay-Siliconix Method for fabricating stack die package
US9595503B2 (en) 2010-09-09 2017-03-14 Vishay-Siliconix Dual lead frame semiconductor package and method of manufacture
JPWO2015114802A1 (ja) * 2014-01-31 2017-03-23 ルネサスエレクトロニクス株式会社 半導体集積回路装置および電源システム
JP2018026982A (ja) * 2016-08-12 2018-02-15 ミツミ電機株式会社 電池保護装置
US9966330B2 (en) 2013-03-14 2018-05-08 Vishay-Siliconix Stack die package
WO2018135465A1 (ja) * 2017-01-17 2018-07-26 三菱電機株式会社 半導体装置および電力変換装置
JP2018146288A (ja) * 2017-03-02 2018-09-20 京セラドキュメントソリューションズ株式会社 電界センサーおよびそれを備えた画像形成装置
US10141310B2 (en) 2014-12-23 2018-11-27 Taiwan Semiconductor Manufacturing Company, Ltd. Short channel effect suppression
JP2020013942A (ja) * 2018-07-20 2020-01-23 ローム株式会社 半導体装置
JP2020150632A (ja) * 2019-03-12 2020-09-17 トヨタ自動車株式会社 電力変換器
JP2023539108A (ja) * 2020-08-19 2023-09-13 華為技術有限公司 ＤｒＭＯＳ、集積回路、電子機器、及び製造方法

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005516417A (ja) * 2002-01-31 2005-06-02 ミクロナス ゲーエムベーハー プログラム可能な電子処理装置用のマウント
US7061077B2 (en) * 2002-08-30 2006-06-13 Fairchild Semiconductor Corporation Substrate based unmolded package including lead frame structure and semiconductor die
US6917082B1 (en) * 2004-01-26 2005-07-12 Altera Corporation Gate-body cross-link circuitry for metal-oxide-semiconductor transistor circuits
US7196313B2 (en) * 2004-04-02 2007-03-27 Fairchild Semiconductor Corporation Surface mount multi-channel optocoupler
JP2006073655A (ja) * 2004-08-31 2006-03-16 Toshiba Corp 半導体モジュール
JP2006147700A (ja) * 2004-11-17 2006-06-08 Sanyo Electric Co Ltd 半導体装置
CN100359686C (zh) * 2004-11-30 2008-01-02 万代半导体元件（上海）有限公司 金属氧化物半导体场效应晶体管和肖特基二极管结合的瘦小外形封装
US20060145312A1 (en) * 2005-01-05 2006-07-06 Kai Liu Dual flat non-leaded semiconductor package
US7884454B2 (en) * 2005-01-05 2011-02-08 Alpha & Omega Semiconductor, Ltd Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package
US7898092B2 (en) * 2007-11-21 2011-03-01 Alpha & Omega Semiconductor, Stacked-die package for battery power management
JP2006216940A (ja) * 2005-01-07 2006-08-17 Toshiba Corp 半導体装置
JP2006223016A (ja) * 2005-02-08 2006-08-24 Renesas Technology Corp 電源システム、マルチチップモジュール、システムインパッケージ、および非絶縁型ｄｃ／ｄｃコンバータ
JP4955222B2 (ja) 2005-05-20 2012-06-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR101297645B1 (ko) 2005-06-30 2013-08-20 페어차일드 세미컨덕터 코포레이션 반도체 다이 패키지 및 그의 제조 방법
WO2007010315A2 (en) * 2005-07-20 2007-01-25 Infineon Technologies Ag Leadframe strip and mold apparatus for an electronic component and method of encapsulating an electronic component
DE102005049978A1 (de) * 2005-10-17 2007-04-26 Infineon Technologies Ag Schaltungsanordnung für Tiefsetzsteller und Verfahren zur Herstellung eines Leistungs-Halbleiterbauelements
DE102005055761B4 (de) * 2005-11-21 2008-02-07 Infineon Technologies Ag Leistungshalbleiterbauelement mit Halbleiterchipstapel in Brückenschaltung und Verfahren zur Herstellung desselben
US8017978B2 (en) * 2006-03-10 2011-09-13 International Rectifier Corporation Hybrid semiconductor device
US7768075B2 (en) * 2006-04-06 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die packages using thin dies and metal substrates
DE102006034679A1 (de) 2006-07-24 2008-01-31 Infineon Technologies Ag Halbleitermodul mit Leistungshalbleiterchip und passiven Bauelement sowie Verfahren zur Herstellung desselben
GB2440974B (en) * 2006-08-04 2011-06-01 Zetex Semiconductors Plc Power supply circuit
US7656003B2 (en) * 2006-08-25 2010-02-02 Hvvi Semiconductors, Inc Electrical stress protection apparatus and method of manufacture
US20090032871A1 (en) * 2007-08-01 2009-02-05 Louis Vervoort Integrated circuit with interconnected frontside contact and backside contact
US20090057869A1 (en) * 2007-08-31 2009-03-05 Alpha & Omega Semiconductor, Ltd. Co-packaged high-side and low-side nmosfets for efficient dc-dc power conversion
JP5107839B2 (ja) * 2008-09-10 2012-12-26 ルネサスエレクトロニクス株式会社 半導体装置
US8168490B2 (en) * 2008-12-23 2012-05-01 Intersil Americas, Inc. Co-packaging approach for power converters based on planar devices, structure and method
US7973393B2 (en) * 2009-02-04 2011-07-05 Fairchild Semiconductor Corporation Stacked micro optocouplers and methods of making the same
US8164199B2 (en) * 2009-07-31 2012-04-24 Alpha and Omega Semiconductor Incorporation Multi-die package
US9257375B2 (en) 2009-07-31 2016-02-09 Alpha and Omega Semiconductor Inc. Multi-die semiconductor package
US9355995B2 (en) 2010-12-13 2016-05-31 Infineon Technologies Americas Corp. Semiconductor packages utilizing leadframe panels with grooves in connecting bars
US9324646B2 (en) 2010-12-13 2016-04-26 Infineon Technologies America Corp. Open source power quad flat no-lead (PQFN) package
US9449957B2 (en) 2010-12-13 2016-09-20 Infineon Technologies Americas Corp. Control and driver circuits on a power quad flat no-lead (PQFN) leadframe
US9443795B2 (en) 2010-12-13 2016-09-13 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having bootstrap diodes on a common integrated circuit (IC)
US9659845B2 (en) 2010-12-13 2017-05-23 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package in a single shunt inverter circuit
US9711437B2 (en) 2010-12-13 2017-07-18 Infineon Technologies Americas Corp. Semiconductor package having multi-phase power inverter with internal temperature sensor
US8587101B2 (en) 2010-12-13 2013-11-19 International Rectifier Corporation Multi-chip module (MCM) power quad flat no-lead (PQFN) semiconductor package utilizing a leadframe for electrical interconnections
US9620954B2 (en) 2010-12-13 2017-04-11 Infineon Technologies Americas Corp. Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
US9524928B2 (en) 2010-12-13 2016-12-20 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having control and driver circuits
US9362215B2 (en) 2010-12-13 2016-06-07 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) semiconductor package with leadframe islands for multi-phase power inverter
US8269330B1 (en) * 2011-04-22 2012-09-18 Cyntec Co., Ltd. MOSFET pair with stack capacitor and manufacturing method thereof
US9087829B2 (en) 2011-08-05 2015-07-21 Infineon Technologies Ag Semiconductor arrangement
JP2013153027A (ja) * 2012-01-24 2013-08-08 Fujitsu Ltd 半導体装置及び電源装置
US9253872B2 (en) * 2012-03-08 2016-02-02 Murata Manufacturing Co., Ltd. Inductor assembly and circuit assembly
US8829692B2 (en) * 2012-09-04 2014-09-09 Rolls-Royce Corporation Multilayer packaged semiconductor device and method of packaging
JP5943795B2 (ja) * 2012-09-26 2016-07-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8933518B2 (en) * 2013-01-04 2015-01-13 Alpha & Omega Semiconductor, Inc. Stacked power semiconductor device using dual lead frame
US9070562B2 (en) 2013-03-11 2015-06-30 Semiconductor Components Industries, Llc Circuit including a switching element, a rectifying element, and a charge storage element
US8928050B2 (en) 2013-03-11 2015-01-06 Semiconductor Components Industries, Llc Electronic device including a schottky contact
JP6641161B2 (ja) * 2015-11-18 2020-02-05 株式会社 日立パワーデバイス 半導体装置、およびそれを用いたオルタネータ
US9881853B2 (en) * 2016-04-04 2018-01-30 Infineon Technologies Ag Semiconductor package having a source-down configured transistor die and a drain-down configured transistor die
CN207603443U (zh) 2017-09-21 2018-07-10 北京比特大陆科技有限公司 算力板功率级电路、封装电源装置和算力板
US20190206741A1 (en) * 2017-12-29 2019-07-04 Texas Instruments Incorporated Method and structure to eliminate substrate coupling in common drain devices
JP7088132B2 (ja) 2019-07-10 2022-06-21 株式会社デンソー 半導体装置及び電子装置
JP7489252B2 (ja) * 2020-07-27 2024-05-23 株式会社 日立パワーデバイス 半導体装置および電力変換装置
CN112601322B (zh) * 2020-12-16 2023-03-14 成都芯进电子有限公司 一种降压型同步整流led恒流控制电路
JP2023046071A (ja) * 2021-09-22 2023-04-03 株式会社東芝 半導体装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4454523A (en) * 1981-03-30 1984-06-12 Siliconix Incorporated High voltage field effect transistor
DE3301648A1 (de) * 1983-01-19 1984-07-19 Siemens AG, 1000 Berlin und 8000 München Misfet mit eingangsverstaerker
KR890004211B1 (ko) * 1983-07-08 1989-10-27 후지쓰가부시끼가이샤 콤프리멘타리 로직회로
JPS60182219A (ja) * 1984-02-29 1985-09-17 Fujitsu Ltd 半導体装置
US5324982A (en) * 1985-09-25 1994-06-28 Hitachi, Ltd. Semiconductor memory device having bipolar transistor and structure to avoid soft error
JPS64817A (en) * 1987-03-11 1989-01-05 Fujitsu Ltd Logic circuit
US4990976A (en) * 1987-11-24 1991-02-05 Nec Corporation Semiconductor device including a field effect transistor having a protective diode between source and drain thereof
IT1239497B (it) * 1990-03-29 1993-11-03 Sgs Thomson Microelectronics Disposizione circuitale per prevenire fenomeni di innesto in transistori pnp verticali con collettore isolato
US5313088A (en) * 1990-09-19 1994-05-17 Nec Corporation Vertical field effect transistor with diffused protection diode
WO1992012575A1 (fr) * 1991-01-12 1992-07-23 Tadashi Shibata Dispositif a semi-conducteurs
US5206544A (en) * 1991-04-08 1993-04-27 International Business Machines Corporation CMOS off-chip driver with reduced signal swing and reduced power supply disturbance
JP3344163B2 (ja) * 1995-06-06 2002-11-11 三菱電機株式会社 赤外線撮像素子
US5801548A (en) * 1996-04-11 1998-09-01 Xilinx Inc Configurable performance-optimized programmable logic device
JP3765163B2 (ja) * 1997-07-14 2006-04-12 ソニー株式会社 レベルシフト回路
US6064223A (en) * 1998-07-08 2000-05-16 Intel Corporation Low leakage circuit configuration for MOSFET circuits

Cited By (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6867494B2 (en) 2002-05-15 2005-03-15 Kabushiki Kaisha Toshiba Semiconductor module
US7259459B2 (en) 2002-05-15 2007-08-21 Kabushiki Kaisha Toshiba Semiconductor module and DC-DC converter
US7401398B2 (en) 2002-08-26 2008-07-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a magnetic element for multi-phase
US7425883B2 (en) 2002-08-26 2008-09-16 Matsushita Electric Industrial Co., Ltd. Magnetic element for multi-phase and method of manufacturing the same
WO2004019352A1 (ja) * 2002-08-26 2004-03-04 Matsushita Electric Industrial Co., Ltd. マルチフェーズ用磁性素子とその製造方法
US7064643B2 (en) 2002-08-26 2006-06-20 Matsushita Electric Industrial Co., Ltd. Multi-phasemagnetic element and production method therefor
KR101086751B1 (ko) 2003-05-14 2011-11-25 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 전원 시스템
KR101116197B1 (ko) 2003-05-14 2012-03-07 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 전원 시스템
JP2004342735A (ja) * 2003-05-14 2004-12-02 Renesas Technology Corp 半導体装置および電源システム
US7579669B2 (en) 2003-12-18 2009-08-25 Kabushiki Kaisha Toshiba Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof
US8044468B2 (en) 2004-01-16 2011-10-25 Renesas Electronics Corporation Semiconductor device
US8344459B2 (en) 2004-01-16 2013-01-01 Renesas Electronics Corporation Semiconductor device
JP2005203584A (ja) * 2004-01-16 2005-07-28 Renesas Technology Corp 半導体装置
US8013430B2 (en) 2004-03-31 2011-09-06 Renesas Electronics Corporation Semiconductor device including DC-DC converter
US8159054B2 (en) 2004-03-31 2012-04-17 Renesas Electronics Corporation Semiconductor device
US8575733B2 (en) 2004-03-31 2013-11-05 Renesas Electronics Corporation Semiconductor device
US7928589B2 (en) 2004-03-31 2011-04-19 Renesas Electronics Corporation Semiconductor device
US8350372B2 (en) 2004-03-31 2013-01-08 Renesas Electronics Corporation Semiconductor device including a DC-DC converter
US8796827B2 (en) 2004-03-31 2014-08-05 Renesas Electronics Corporation Semiconductor device including a DC-DC converter
US7554181B2 (en) 2004-03-31 2009-06-30 Renesas Technology Corp. Semiconductor device with non-overlapping chip mounting sections
US7554209B2 (en) 2004-03-31 2009-06-30 Renesas Technology Corp. Semiconductor device having a metal plate conductor
US9412701B2 (en) 2004-03-31 2016-08-09 Renesas Electronics Corporation Semiconductor device including a DC-DC converter
US7271477B2 (en) 2004-04-09 2007-09-18 Kabushiki Kaisha Toshiba Power semiconductor device package
US7863756B2 (en) 2004-04-19 2011-01-04 Renesas Electronics Corporation Semiconductor device
US7436070B2 (en) 2004-04-19 2008-10-14 Renesas Technology Corp. Semiconductor device
US8482345B2 (en) 2004-04-19 2013-07-09 Renesas Electronics Corporation Semiconductor device
US8076767B2 (en) 2004-04-19 2011-12-13 Renesas Electronics Corporation Semiconductor device
US8207558B2 (en) 2004-07-09 2012-06-26 Renesas Electronics Corporation Semiconductor device, DC/DC converter and power supply
US8853846B2 (en) 2004-07-30 2014-10-07 Renesas Electronics Corporation Semiconductor device and a manufacturing method of the same
US9793265B2 (en) 2004-07-30 2017-10-17 Renesas Electronics Corporation Semiconductor device including Schottky barrier diode and power MOSFETs and a manufacturing method of the same
US8592904B2 (en) 2004-07-30 2013-11-26 Renesas Electronics Corporation Semiconductor device including Schottky barrier diode
US8519533B2 (en) 2004-07-30 2013-08-27 Renesas Electronics Corporation Semiconductor device including a DC-DC converter with schottky barrier diode
US9153686B2 (en) 2004-07-30 2015-10-06 Renesas Electronics Corporation Semiconductor device including DC-DC converter
US10204899B2 (en) 2004-07-30 2019-02-12 Renesas Electronics Corporation Semiconductor device with first and second chips and connections thereof and a manufacturing method of the same
US9461163B2 (en) 2004-07-30 2016-10-04 Renesas Electronics Corporation Semiconductor device including Schottky barrier diode and power MOSFETs and a manufacturing method of the same
US7295453B2 (en) 2004-11-30 2007-11-13 Renesas Technology Corp. Semiconductor device
US8064235B2 (en) 2004-11-30 2011-11-22 Renesas Electronics Corporation Semiconductor device
US7852651B2 (en) 2004-11-30 2010-12-14 Renesas Electronics Corporation Semiconductor device
US7535741B2 (en) 2004-11-30 2009-05-19 Renesas Technology Corp. Semiconductor device
US8345458B2 (en) 2004-11-30 2013-01-01 Renesas Electronics Corporation Semiconductor device
JP2006324320A (ja) * 2005-05-17 2006-11-30 Renesas Technology Corp 半導体装置
JP2007116012A (ja) * 2005-10-24 2007-05-10 Renesas Technology Corp 半導体装置及びそれを用いた電源装置
JP2007116013A (ja) * 2005-10-24 2007-05-10 Renesas Technology Corp 半導体装置及びそれを用いた電源装置
US7932588B2 (en) 2006-03-28 2011-04-26 Renesas Electronics Corporation Semiconductor device including a DC-DC converter having a metal plate
US8592914B2 (en) 2006-03-28 2013-11-26 Renesas Electronics Corporation Semiconductor device and manufacturing method of the same
US7679173B2 (en) 2006-03-28 2010-03-16 Renesas Technology Corp. Semiconductor device including a DC-DC converter
US8237232B2 (en) 2006-03-28 2012-08-07 Renesas Electronics Corporation Semiconductor device including a DC-DC converter having a metal plate
US7687885B2 (en) 2006-05-30 2010-03-30 Renesas Technology Corp. Semiconductor device with reduced parasitic inductance
JP2008112828A (ja) * 2006-10-30 2008-05-15 Mitsubishi Electric Corp 裏面高耐圧集積回路を用いた半導体装置
JP2008187167A (ja) * 2006-12-11 2008-08-14 Internatl Rectifier Corp パワー管理装置
JP2007208295A (ja) * 2007-04-27 2007-08-16 Calsonic Kansei Corp Ｐｗｍモジュール
JP2008109853A (ja) * 2007-11-05 2008-05-08 Hitachi Ltd 半導体装置
JP2008104348A (ja) * 2007-11-05 2008-05-01 Renesas Technology Corp 半導体装置および電源システム
JP2009247042A (ja) * 2008-03-28 2009-10-22 Denso Corp 電力変換装置
WO2010053819A3 (en) * 2008-10-29 2010-07-15 Corning Incorporated In-situ contaminant removal in optical packages
US8094300B2 (en) 2008-10-29 2012-01-10 Corning Incorporated In-situ contaminant removal in optical packages
CN102197553B (zh) * 2008-10-29 2012-12-19 康宁股份有限公司 光学封装中的原位污染物去除
JP2010283236A (ja) * 2009-06-05 2010-12-16 Renesas Electronics Corp 半導体装置
JP2011205020A (ja) * 2010-03-26 2011-10-13 Sanken Electric Co Ltd 半導体装置
US10074634B2 (en) 2010-05-27 2018-09-11 Rohm Co., Ltd. Semiconductor device comprising PN junction diode and schottky barrier diode
US10559552B2 (en) 2010-05-27 2020-02-11 Rohm Co., Ltd. Semiconductor device comprising PN junction diode and Schottky barrier diode
US10896896B2 (en) 2010-05-27 2021-01-19 Rohm Co., Ltd. Semiconductor device comprising PN junction diode and schottky barrier diode
US9245956B2 (en) 2010-05-27 2016-01-26 Rohm Co., Ltd. Electronic circuit comprising unipolar and bipolar devices
US9917074B2 (en) 2010-05-27 2018-03-13 Rohm Co., Ltd. Semiconductor device comprising PN junction diode and schottky barrier diode
US11502063B2 (en) 2010-05-27 2022-11-15 Rohm Co., Ltd. Semiconductor device comprising PN junction diode and Schottky barrier diode
US11894349B2 (en) 2010-05-27 2024-02-06 Rohm Co., Ltd. Semiconductor device comprising PN junction diode and Schottky barrier diode
US9679877B2 (en) 2010-05-27 2017-06-13 Rohm Co., Ltd. Semiconductor device comprising PN junction diode and Schottky barrier diode
US12341135B2 (en) 2010-05-27 2025-06-24 Rohm Co., Ltd. Semiconductor device comprising PN junction diode and Schottky barrier diode
US9461021B2 (en) 2010-05-27 2016-10-04 Rohm Co., Ltd. Electronic circuit comprising PN junction and schottky barrier diodes
US9595503B2 (en) 2010-09-09 2017-03-14 Vishay-Siliconix Dual lead frame semiconductor package and method of manufacture
US10229893B2 (en) 2010-09-09 2019-03-12 Vishay-Siliconix Dual lead frame semiconductor package and method of manufacture
JP2011082535A (ja) * 2010-11-15 2011-04-21 Renesas Electronics Corp 半導体装置
JP2012222360A (ja) * 2011-04-11 2012-11-12 Internatl Rectifier Corp Ｉｉｉ−ｖ族トランジスタとｉｖ族横型トランジスタを含む積層複合デバイス
JP2011205112A (ja) * 2011-05-23 2011-10-13 Renesas Electronics Corp Ｄｃ／ｄｃコンバータ用半導体装置
JP2012050328A (ja) * 2011-11-21 2012-03-08 Renesas Electronics Corp 半導体装置
JP2016027677A (ja) * 2012-05-29 2016-02-18 日本精工株式会社 半導体モジュール
JP2014053742A (ja) * 2012-09-06 2014-03-20 Seiko Epson Corp スイッチング回路及び医療機器
JP2013062540A (ja) * 2012-12-21 2013-04-04 Renesas Electronics Corp 半導体装置
US9966330B2 (en) 2013-03-14 2018-05-08 Vishay-Siliconix Stack die package
US9589929B2 (en) 2013-03-14 2017-03-07 Vishay-Siliconix Method for fabricating stack die package
US10546840B2 (en) 2013-03-14 2020-01-28 Vishay SIliconix, LLC Method for fabricating stack die package
JP2016515306A (ja) * 2013-03-14 2016-05-26 ヴィシェイ−シリコニックス スタックダイパッケージ
JP2013141035A (ja) * 2013-04-19 2013-07-18 Renesas Electronics Corp 半導体装置
JPWO2015114802A1 (ja) * 2014-01-31 2017-03-23 ルネサスエレクトロニクス株式会社 半導体集積回路装置および電源システム
US10141310B2 (en) 2014-12-23 2018-11-27 Taiwan Semiconductor Manufacturing Company, Ltd. Short channel effect suppression
JP2017005165A (ja) * 2015-06-12 2017-01-05 富士電機株式会社 半導体装置
JP2016165017A (ja) * 2016-06-15 2016-09-08 ローム株式会社 高効率モジュール
JP2018026982A (ja) * 2016-08-12 2018-02-15 ミツミ電機株式会社 電池保護装置
JPWO2018135465A1 (ja) * 2017-01-17 2019-11-07 三菱電機株式会社 半導体装置および電力変換装置
WO2018135465A1 (ja) * 2017-01-17 2018-07-26 三菱電機株式会社 半導体装置および電力変換装置
JP2018146288A (ja) * 2017-03-02 2018-09-20 京セラドキュメントソリューションズ株式会社 電界センサーおよびそれを備えた画像形成装置
JP2020013942A (ja) * 2018-07-20 2020-01-23 ローム株式会社 半導体装置
JP7219563B2 (ja) 2018-07-20 2023-02-08 ローム株式会社 半導体装置
JP2020150632A (ja) * 2019-03-12 2020-09-17 トヨタ自動車株式会社 電力変換器
JP7279426B2 (ja) 2019-03-12 2023-05-23 株式会社デンソー 電力変換器
JP2023539108A (ja) * 2020-08-19 2023-09-13 華為技術有限公司 ＤｒＭＯＳ、集積回路、電子機器、及び製造方法
US12334913B2 (en) 2020-08-19 2025-06-17 Huawei Technologies Co., Ltd. DrMOS, integrated circuit, electronic device, and preparation method
JP7792952B2 (ja) 2020-08-19 2025-12-26 華為技術有限公司 ＤｒＭＯＳ、集積回路、電子機器、及び製造方法

Also Published As

Publication number Publication date
US6842346B2 (en) 2005-01-11
US6700793B2 (en) 2004-03-02
US20040135248A1 (en) 2004-07-15
US20020093094A1 (en) 2002-07-18

Similar Documents

Publication Publication Date Title
US6700793B2 (en) Semiconductor device
JP4010792B2 (ja) 半導体装置
US8344459B2 (en) Semiconductor device
CN101378053B (zh) 高、低压侧n沟道金属氧化物半导体场效应晶体管组合封装
JP2006216940A (ja) 半導体装置
US8148815B2 (en) Stacked field effect transistor configurations
US7852651B2 (en) Semiconductor device
US8008699B2 (en) Semiconductor device with circuit for reduced parasitic inductance
JP3809168B2 (ja) 半導体モジュール
US11742268B2 (en) Package structure applied to power converter
US8044520B2 (en) Semiconductor device
US8735957B2 (en) Vertical MOSFET transistor with a vertical capacitor region
US20100171543A1 (en) Packaged power switching device
US20140063744A1 (en) Vertically Stacked Power FETS and Synchronous Buck Converter Having Low On-Resistance
CN101488496B (zh) 半导体集成电路
CN101976951A (zh) 多相功率开关模式电压调节器
JP2006073655A (ja) 半導体モジュール
US7764105B2 (en) MOSFET for synchronous rectification
JP4344776B2 (ja) 半導体装置
JP2006253734A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050204

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050204

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081209

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090414