JP2011082535A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2011082535A JP2011082535A JP2010254644A JP2010254644A JP2011082535A JP 2011082535 A JP2011082535 A JP 2011082535A JP 2010254644 A JP2010254644 A JP 2010254644A JP 2010254644 A JP2010254644 A JP 2010254644A JP 2011082535 A JP2011082535 A JP 2011082535A
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- 229910052751 metal Inorganic materials 0.000 claims description 43
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- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
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Abstract
【解決手段】ハイサイドスイッチ用のパワーMOS・FETQ1とローサイドスイッチ用のパワーMOS・FETQ2とが直列に接続された回路を有する非絶縁型DC−DCコンバータにおいて、ハイサイドスイッチ用のパワーMOS・FETQ1と、パワーMOS・FETQ1,Q2を駆動するためのドライバ回路3a,3bとを同一の半導体チップ5aに形成し、ローサイドスイッチ用のパワーMOS・FETQ2を別の半導体チップ5bに形成し、これら2つの半導体チップ5a,5bを同一のパッケージ6a内に封止した。
【選択図】図8
Description
本実施の形態1の半導体装置は、例えばデスクトップ型のパーソナルコンピュータ、ノート型のパーソナルコンピュータ、サーバまたはゲーム機等の電源回路に用いられる非絶縁型DC−DCコンバータである。図1は、その非絶縁型DC−DCコンバータ1の回路図の一例を示している。非絶縁型DC−DCコンバータ1は、制御回路2、ドライバ回路3a,3b、パワーMOS・FET(以下、単にパワーMOSという)Q1(第1電界効果トラジスタ),Q2(第2電界効果トランジスタ)、コイルL1、コンデンサC1等のような素子を有している。これら素子は、配線基板に実装され、配線基板の配線を通じて電気的に接続されている。なお、図1の符号の4は、上記デスクトップ型のパーソナルコンピュータ、ノート型のパーソナルコンピュータ、サーバまたはゲーム機等のCPU(Central Processing Unit)またはDSP(Digital Signal Processor)等のような負荷回路を示している。符合のET1,ET2は端子を示している。
図20は本発明の他の実施の形態である非絶縁型DC−DCコンバータ1の一部の回路を含むパッケージ6aの構成例の平面図、図21は図20のY1−Y1線の断面図である。なお、図20でも、図面を見易くするため、一部の封止部材8を取り除いて示すとともに、ダイパッド7a1,7a2およびリード7bにハッチングを付した。
図22は本発明の他の実施の形態である非絶縁型DC−DCコンバータ1の一部の回路を含むパッケージ6aの構成例の平面図、図23は図22のY1−Y1線の断面図である。なお、図22でも、図面を見易くするため、一部の封止部材8を取り除いて示すとともに、ダイパッド7a1,7a2およびリード7bにハッチングを付した。
DC−DCコンバータの大電流化および高周波化に起因する他の問題として動作時の熱の問題がある。特に、前記実施の形態1〜3での説明では、2つの半導体チップ5a,5bを1つのパッケージ6aに収容する構成なので、高い放熱性が必要となる。本実施の形態4では、その放熱性を考慮した構成について説明する。
本実施の形態5では、前記放熱構成の変形例について説明する。
本実施の形態6では、前記放熱構成の変形例について説明する。
2 制御回路
3a ドライバ回路
3b ドライバ回路
4 負荷回路
5a 半導体チップ(第1の半導体チップ)
5b 半導体チップ(第2の半導体チップ)
5c〜5k 半導体チップ
6a パッケージ
6c〜6i パッケージ
7a1,7a2 ダイパッド
7b1〜7b3 リード
10a,10b 半導体基板
10bep エピタキシャル層
11a ゲート絶縁膜
12a p+型の半導体領域
13a p−型の半導体領域
13b p+型の半導体領域
14a n−型の半導体領域
14b n+型の半導体領域
17 ドレイン電極
18n1 n型の半導体領域
18n2 n+型の半導体領域
18p p型の半導体領域
19 溝
20 キャップ絶縁膜
23 配線基板
24,25 パッケージ
26,27 チップ部品
28a,28b 配線
28c,28d 配線(出力配線)
28e 配線
30 金属板配線
31 バンプ電極
33 リボン配線
35 接着材
36 絶縁シート
37 放熱フィン
40 金属体
41 接着材
50,50A〜50D 非絶縁型DC−DCコンバータ
Q1 パワーMOS・FET(第1電界効果トランジスタ)
Q2 パワーMOS・FET(第2電界効果トランジスタ)
Q3,Q4 パワーMOS・FET
Q50 パワーMOS・FET
L1 コイル
C1 コンデンサ
ET1〜ET4 端子
G1〜G4 ゲート電極
SR1〜SR4 ソース領域
DR1〜DR4 ドレイン領域
Vin 入力電圧
VgH,VgL ゲート電圧
BP,BP1〜BP7 ボンディングパッド
WR ボンディングワイヤ
NWL nウエル
PWL pウエル
CH1 チャネル形成領域
Claims (5)
- 樹脂封止体と、
前記樹脂封止体の外部に露出し、かつ、第1電源電位を供給する第1電源端子と、
前記樹脂封止体の外部に露出し、かつ、前記第1電源電位より低い第2電源電位を供給する第2電源端子と、
前記樹脂封止体の外部に露出し、かつ、制御信号を供給する制御端子と、
前記樹脂封止体の外部に露出する出力端子と、
前記第1電源端子と前記出力端子との間にソース・ドレイン経路が直列接続された第1電界効果トランジスタと、
前記出力端子と前記第2電源端子との間にソース・ドレイン経路が直列接続された第2電界効果トランジスタと、
前記制御端子に接続され、かつ、前記制御信号によって前記第1電界効果トランジスタのゲート電極を制御する第1制御回路と、
前記制御端子に接続され、かつ、前記制御信号によって前記第2電界効果トランジスタのゲート電極を制御する第2制御回路と、を有し、
前記第1電界効果トランジスタ及び前記第1制御回路が形成された第1半導体チップと、
前記第2電界効果トランジスタが形成された前記第1半導体チップと異なる第2半導体チップと、
前記第1半導体チップが搭載された第1チップ搭載部材と、
前記第2半導体チップが搭載された第2チップ搭載部材と、
前記第1電界効果トランジスタのソース電極と前記第2チップ搭載部材と接続する第1メタルプレートと、
前記第2電界効果トランジスタのソース電極と前記第2電源端子とを接続する第2メタルプレートと、
をさらに有し、
前記第1及び第2半導体チップは、前記樹脂封止体内に封止され、
前記第1チップ搭載部材および前記第2チップ搭載部材の一部は、前記樹脂封止体の外部に露出されていることを特徴とする半導体装置。 - 請求項2記載の半導体装置において、前記第1半導体チップに、前記第2電界効果トランジスタのゲート電極を制御する前記第2制御回路を設けたことを特徴とする半導体装置。
- 第1電源端子と、
前記第1電源端子と異なる第2電源端子と、
ハイサイドスイッチ用パワートランジスタの形成された第1半導体チップと、
前記ハイサイドスイッチ用パワートランジスタに直列に接続されるローサイドスイッチ用パワートランジスタが形成された第2半導体チップと、
前記第1半導体チップの搭載された第1チップ搭載部材と、
前記第2半導体チップの搭載された第2チップ搭載部材と、
前記ハイサイドスイッチ用パワートランジスタのソース電極と前記第2チップ搭載部材とを接続する第1金属体と、
前記ローサイドスイッチ用パワートランジスタのソース電極と前記第2電源端子とを接続する第2金属体と、
を同一のパッケージに備え、
前記第1半導体チップに、前記ハイサイドスイッチ用パワートランジスタを駆動する駆動回路を設け、
前記ハイサイドスイッチ用パワートランジスタを横型パワーMOS・FETにより形成し、前記ローサイドスイッチ用パワートランジスタを縦型のパワーMOS・FETにより形成したことを特徴とする半導体装置。 - 請求項3記載の半導体装置において、
前記第1チップ搭載部材および前記第2チップ搭載部材の一部を、前記パッケージの外部に露出させたことを特徴とする半導体装置。 - 請求項3記載の半導体装置において、前記第1半導体チップに、前記ローサイドスイッチ用パワートランジスタのゲート電極を制御する第2制御回路を設けたことを特徴とする半導体装置。
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JP2012256862A (ja) * | 2011-04-28 | 2012-12-27 | Internatl Rectifier Corp | 集積電力段 |
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