JP2002164428A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JP2002164428A
JP2002164428A JP2000362462A JP2000362462A JP2002164428A JP 2002164428 A JP2002164428 A JP 2002164428A JP 2000362462 A JP2000362462 A JP 2000362462A JP 2000362462 A JP2000362462 A JP 2000362462A JP 2002164428 A JP2002164428 A JP 2002164428A
Authority
JP
Japan
Prior art keywords
wiring
insulating layer
connection hole
forming
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000362462A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002164428A5 (enExample
Inventor
Takafumi Oshima
隆文 大島
Hiroshi Miyazaki
博史 宮▲崎▼
Hideo Aoki
英雄 青木
Kazutoshi Omori
一稔 大森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000362462A priority Critical patent/JP2002164428A/ja
Priority to TW090128124A priority patent/TW541657B/zh
Priority to US09/987,914 priority patent/US6812127B2/en
Priority to KR1020010074455A priority patent/KR100830666B1/ko
Publication of JP2002164428A publication Critical patent/JP2002164428A/ja
Publication of JP2002164428A5 publication Critical patent/JP2002164428A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005—Formation and after-treatment of dielectrics
    • H01L2221/101—Forming openings in dielectrics
    • H01L2221/1015—Forming openings in dielectrics for dual damascene structures
    • H01L2221/1036—Dual damascene with different via-level and trench-level dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP2000362462A 2000-11-29 2000-11-29 半導体装置およびその製造方法 Pending JP2002164428A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000362462A JP2002164428A (ja) 2000-11-29 2000-11-29 半導体装置およびその製造方法
TW090128124A TW541657B (en) 2000-11-29 2001-11-13 Semiconductor device and its fabrication method
US09/987,914 US6812127B2 (en) 2000-11-29 2001-11-16 Method of forming semiconductor device including silicon oxide with fluorine, embedded wiring layer, via holes, and wiring grooves
KR1020010074455A KR100830666B1 (ko) 2000-11-29 2001-11-28 반도체장치 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000362462A JP2002164428A (ja) 2000-11-29 2000-11-29 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2002164428A true JP2002164428A (ja) 2002-06-07
JP2002164428A5 JP2002164428A5 (enExample) 2005-02-03

Family

ID=18833731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000362462A Pending JP2002164428A (ja) 2000-11-29 2000-11-29 半導体装置およびその製造方法

Country Status (4)

Country Link
US (1) US6812127B2 (enExample)
JP (1) JP2002164428A (enExample)
KR (1) KR100830666B1 (enExample)
TW (1) TW541657B (enExample)

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WO2004105123A1 (ja) * 2003-05-21 2004-12-02 Fujitsu Limited 半導体装置
JP2007129223A (ja) * 2005-11-02 2007-05-24 Internatl Business Mach Corp <Ibm> 半導体構造およびその製作方法（チャネルの応力向上のための低ヤング率スペーサ）
US7323781B2 (en) 2003-03-25 2008-01-29 Renesas Technology Corp. Semiconductor device and manufacturing method thereof
US8012871B2 (en) 2002-10-17 2011-09-06 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
JPWO2010125682A1 (ja) * 2009-04-30 2012-10-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

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TW544855B (en) * 2001-06-25 2003-08-01 Nec Electronics Corp Dual damascene circuit with upper wiring and interconnect line positioned in regions formed as two layers including organic polymer layer and low-permittivity layer
US7474002B2 (en) * 2001-10-30 2009-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having dielectric film having aperture portion
JP2003257970A (ja) * 2002-02-27 2003-09-12 Nec Electronics Corp 半導体装置及びその配線構造
TWI300971B (en) * 2002-04-12 2008-09-11 Hitachi Ltd Semiconductor device
JP3989763B2 (ja) * 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
TWI288443B (en) 2002-05-17 2007-10-11 Semiconductor Energy Lab SiN film, semiconductor device, and the manufacturing method thereof
JP2004014841A (ja) * 2002-06-07 2004-01-15 Fujitsu Ltd 半導体装置及びその製造方法
JP2004031439A (ja) * 2002-06-21 2004-01-29 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US6917108B2 (en) * 2002-11-14 2005-07-12 International Business Machines Corporation Reliable low-k interconnect structure with hybrid dielectric
JP2004165559A (ja) * 2002-11-15 2004-06-10 Toshiba Corp 半導体装置
JP4489345B2 (ja) * 2002-12-13 2010-06-23 株式会社ルネサステクノロジ 半導体装置の製造方法
NL1023275C2 (nl) * 2003-04-25 2004-10-27 Cavendish Kinetics Ltd Werkwijze voor het vervaardigen van een micro-mechanisch element.
TWI286814B (en) * 2003-04-28 2007-09-11 Fujitsu Ltd Fabrication process of a semiconductor device
US7096450B2 (en) * 2003-06-28 2006-08-22 International Business Machines Corporation Enhancement of performance of a conductive wire in a multilayered substrate
TWI285938B (en) * 2003-08-28 2007-08-21 Fujitsu Ltd Semiconductor device
KR100605505B1 (ko) * 2004-06-04 2006-07-31 삼성전자주식회사 버퍼막 패턴을 갖는 반도체 장치들 및 그들의 형성방법들
JP2006024811A (ja) * 2004-07-09 2006-01-26 Sony Corp 半導体装置の製造方法
JP4185478B2 (ja) * 2004-07-23 2008-11-26 長野計器株式会社 歪検出器およびその製造方法
JP2006140404A (ja) * 2004-11-15 2006-06-01 Renesas Technology Corp 半導体装置
JP2006210508A (ja) * 2005-01-26 2006-08-10 Sony Corp 半導体装置およびその製造方法
US7414275B2 (en) * 2005-06-24 2008-08-19 International Business Machines Corporation Multi-level interconnections for an integrated circuit chip
JP2007019188A (ja) * 2005-07-06 2007-01-25 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP2007123509A (ja) * 2005-10-27 2007-05-17 Seiko Epson Corp 半導体装置およびその製造方法
US7670927B2 (en) * 2006-05-16 2010-03-02 International Business Machines Corporation Double-sided integrated circuit chips
US8013342B2 (en) * 2007-11-14 2011-09-06 International Business Machines Corporation Double-sided integrated circuit chips
US7602027B2 (en) * 2006-12-29 2009-10-13 Semiconductor Components Industries, L.L.C. Semiconductor component and method of manufacture
DE102007037858B4 (de) * 2007-08-10 2012-04-19 Infineon Technologies Ag Halbleiterbauelement mit verbessertem dynamischen Verhalten
US20090079072A1 (en) * 2007-09-21 2009-03-26 Casio Computer Co., Ltd. Semiconductor device having low dielectric insulating film and manufacturing method of the same
US8587124B2 (en) * 2007-09-21 2013-11-19 Teramikros, Inc. Semiconductor device having low dielectric insulating film and manufacturing method of the same
TWI419268B (zh) * 2007-09-21 2013-12-11 兆裝微股份有限公司 半導體裝置及其製造方法
JP4666028B2 (ja) * 2008-03-31 2011-04-06 カシオ計算機株式会社 半導体装置
US8304863B2 (en) 2010-02-09 2012-11-06 International Business Machines Corporation Electromigration immune through-substrate vias
US8354339B2 (en) * 2010-07-20 2013-01-15 International Business Machines Corporation Methods to form self-aligned permanent on-chip interconnect structures
US8642460B2 (en) * 2011-06-08 2014-02-04 International Business Machines Corporation Semiconductor switching device and method of making the same
CN102332425A (zh) * 2011-09-23 2012-01-25 复旦大学 一种提升铜互连技术中抗电迁移特性的方法
US8640072B1 (en) 2012-07-31 2014-01-28 Freescale Semiconductor, Inc. Method for forming an electrical connection between metal layers
US9032615B2 (en) 2012-07-31 2015-05-19 Freescale Semiconductor, Inc. Method for forming an electrical connection between metal layers
TWI613709B (zh) * 2013-02-20 2018-02-01 財團法人工業技術研究院 半導體元件結構及其製造方法與應用其之畫素結構
US10541204B2 (en) * 2015-10-20 2020-01-21 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnection structure and method of forming the same
TWI590350B (zh) * 2016-06-30 2017-07-01 欣興電子股份有限公司 線路重分佈結構的製造方法與線路重分佈結構單元
US9735015B1 (en) * 2016-12-05 2017-08-15 United Microelectronics Corporation Fabricating method of semiconductor structure
KR102307127B1 (ko) * 2017-06-14 2021-10-05 삼성전자주식회사 반도체 소자
US20200312768A1 (en) * 2019-03-27 2020-10-01 Intel Corporation Controlled organic layers to enhance adhesion to organic dielectrics and process for forming such
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US8012871B2 (en) 2002-10-17 2011-09-06 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
US8431480B2 (en) 2003-03-25 2013-04-30 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
US9064870B2 (en) 2003-03-25 2015-06-23 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
US7323781B2 (en) 2003-03-25 2008-01-29 Renesas Technology Corp. Semiconductor device and manufacturing method thereof
US7777343B2 (en) 2003-03-25 2010-08-17 Renesas Technology Corp. Semiconductor device and manufacturing method thereof
US10304726B2 (en) 2003-03-25 2019-05-28 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
US8053893B2 (en) 2003-03-25 2011-11-08 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
US10121693B2 (en) 2003-03-25 2018-11-06 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
US8810034B2 (en) 2003-03-25 2014-08-19 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
US8617981B2 (en) 2003-03-25 2013-12-31 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
US9818639B2 (en) 2003-03-25 2017-11-14 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
US9659867B2 (en) 2003-03-25 2017-05-23 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
US9490213B2 (en) 2003-03-25 2016-11-08 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
WO2004105123A1 (ja) * 2003-05-21 2004-12-02 Fujitsu Limited 半導体装置
US7170177B2 (en) 2003-05-21 2007-01-30 Fujitsu Limited Semiconductor apparatus
JP2007129223A (ja) * 2005-11-02 2007-05-24 Internatl Business Mach Corp <Ibm> 半導体構造およびその製作方法（チャネルの応力向上のための低ヤング率スペーサ）
JPWO2010125682A1 (ja) * 2009-04-30 2012-10-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US6812127B2 (en) 2004-11-02
KR20020042458A (ko) 2002-06-05
US20020100984A1 (en) 2002-08-01
KR100830666B1 (ko) 2008-05-20
TW541657B (en) 2003-07-11

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