JP2001156070A - 機械的ロバスト性のあるパッドインターフェースおよび方法 - Google Patents
機械的ロバスト性のあるパッドインターフェースおよび方法Info
- Publication number
- JP2001156070A JP2001156070A JP2000350865A JP2000350865A JP2001156070A JP 2001156070 A JP2001156070 A JP 2001156070A JP 2000350865 A JP2000350865 A JP 2000350865A JP 2000350865 A JP2000350865 A JP 2000350865A JP 2001156070 A JP2001156070 A JP 2001156070A
- Authority
- JP
- Japan
- Prior art keywords
- bond pad
- conductive
- dielectric layer
- layer
- capping layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- H01L2924/014—Solder alloys
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0494—4th Group
- H01L2924/04941—TiN
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0495—5th Group
- H01L2924/04953—TaN
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- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0504—14th Group
- H01L2924/05042—Si3N4
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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| US443443 | 1999-11-22 | ||
| US09/443,443 US6803302B2 (en) | 1999-11-22 | 1999-11-22 | Method for forming a semiconductor device having a mechanically robust pad interface |
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| JP2001156070A true JP2001156070A (ja) | 2001-06-08 |
| JP2001156070A5 JP2001156070A5 (enExample) | 2008-01-10 |
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| US20230197618A1 (en) * | 2021-12-21 | 2023-06-22 | Intel Corporation | Multilayer glass substrate |
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| US7675183B2 (en) | 2001-03-01 | 2010-03-09 | Kabushiki Kaisha Toshiba | Semiconductor device including an insulating film and insulating pillars and manufacturing method of the semiconductor device |
| US7019398B2 (en) | 2002-06-18 | 2006-03-28 | Kabushiki Kaisha Toshiba | Semiconductor device |
| WO2005088702A1 (ja) * | 2004-03-16 | 2005-09-22 | Matsushita Electric Industrial Co., Ltd. | 半導体装置 |
| US7777223B2 (en) | 2004-03-16 | 2010-08-17 | Pansonic Corporation | Semiconductor device |
| US8304857B2 (en) | 2004-03-16 | 2012-11-06 | Panasonic Corporation | Semiconductor device |
| JP2008505506A (ja) * | 2004-07-08 | 2008-02-21 | スパンジョン・リミテッド・ライアビリティ・カンパニー | 信頼性の向上した銅被膜のための接続パッド構造およびその製造方法 |
| JP2006165515A (ja) * | 2004-11-11 | 2006-06-22 | Denso Corp | 半導体装置およびその製造方法 |
| JP2007027400A (ja) * | 2005-07-15 | 2007-02-01 | Kawasaki Microelectronics Kk | 半導体装置の製造方法及び半導体装置 |
| KR101067358B1 (ko) * | 2007-07-23 | 2011-09-23 | 내셔널 세미콘덕터 코포레이션 | 패드 아래 esd 및 패드 본딩 아래 액티브를 위한 본딩 패드 스택들 |
| JP2011530811A (ja) * | 2008-08-08 | 2011-12-22 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 半導体構造体、半導体構造体を形成する方法、および設計構造 |
| JP2010251754A (ja) * | 2009-04-15 | 2010-11-04 | Internatl Business Mach Corp <Ibm> | C4ボール内の均一な電流密度のための金属配線構造体 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20010051426A1 (en) | 2001-12-13 |
| KR100794476B1 (ko) | 2008-01-14 |
| US20050014356A1 (en) | 2005-01-20 |
| KR20010060374A (ko) | 2001-07-06 |
| US6803302B2 (en) | 2004-10-12 |
| CN1305224A (zh) | 2001-07-25 |
| CN1189930C (zh) | 2005-02-16 |
| US7169694B2 (en) | 2007-01-30 |
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