CN1305224A - 机械性增强的焊接区界面及其方法 - Google Patents

机械性增强的焊接区界面及其方法 Download PDF

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Publication number
CN1305224A
CN1305224A CN00130967A CN00130967A CN1305224A CN 1305224 A CN1305224 A CN 1305224A CN 00130967 A CN00130967 A CN 00130967A CN 00130967 A CN00130967 A CN 00130967A CN 1305224 A CN1305224 A CN 1305224A
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layer
welding region
conductive welding
insulating barrier
bond pad
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CN00130967A
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CN1189930C (zh
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斯科特·K·鲍兹德尔
托马斯·S·科巴亚西
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NXP USA Inc
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Motorola Inc
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Abstract

提供耐在用探针探测或封装操作期间会施加的外力的复合焊盘。复合焊盘包括在半导体衬底(100)上形成的非自钝化导电焊盘(134)。然后在导电焊盘上形成绝缘层(136)。去除部分绝缘层使该层有穿孔而露出一部分导电焊盘。留下的部分形成叠置在焊盘上的支撑结构(138)。然后在焊盘结构上面形成自钝化导电封顶层(204),在这场合下绝缘层中的穿孔可以供封顶层和在下面的焊盘露出部分之间电接触用。支撑结构(138)构成保护封顶层和焊盘之间界面的机械阻挡层。

Description

机械性增强的焊接区界面及其方法
本发明一般地涉及集成电路而更详细地涉及在集成电路内应用的在机械上加固的焊接区界面。
本申请涉及1999年10月4日归档并授于名称“半导体器件和制作方法”(“Semiconductor Device and Method of Formation”)的美国专利申请No.09/411,266，美国专利申请No.09/411,266被委托给申请代理人而在本申请说明书中由参考文献引用。
在半导体衬底上采用形成电路元件的许多不同的工艺操作制成集成电路。为了使进出线路与半导体衬底相联系，在集成电路上形成焊接区。焊接区提供经由探针、焊线、导电凸出部等从芯片和到芯片输送电信号和电源的手段。
一般由例如铝、铜或其一些合金制成焊接区。因为与铝比较起来铜改善电磁性和提高承受较高电流密度的能力，所以铜常常用于集成电路里的金属层。然而，铜是非自钝化的金属，当芯片暴露于大气或者没有密闭封装而使潮气与铜焊接区相互作用时能够发生铜焊接区的氧化或腐蚀。对于焊接区来说，这种腐蚀会降低焊接导线或凸出部的能力而且也会使焊接损坏而引起工作时间范围内的故障。相反，铝是自钝化的，而所以是更耐由暴露大气引起的剥蚀的。因此，一般用铝制作焊接区。
为了获得铝的自钝化性质的优点和铜的优良电特性，在集成电路设计中可以采用复合的焊接区结构。在复合焊接区(焊盘)结构中，铜用于与集成电路中其他薄层面接的在上面的焊接区薄层。在铜部分的顶部制作耐腐蚀的铝封顶层，以形成保护铜部分免于暴露大气的气密封。在考虑到电连通性时为了在物理上使复合焊接区中的铜部分和铝部分隔离，可以在界面上形成比较薄的阻挡金属层。
当进行测试操作和用探针探测操作时在复合焊接区结构中会出现一些问题。为了获得与焊接区的良好的连续性，像探针之类的元件必须施加会损坏或移动焊接区表面部分的力。因此，用像这样一些元件的物理接触会损坏组成复合焊接区结构的各种金属之间的界面。如果在下面的铜层和铝封顶层之间阻挡层被破坏，那么产生的损伤会引起金属间化合物的生成。铝铜金属间化合物含有包括降低机械强度和增加电阻不希望有的特性。此外如果探针使下面的铜暴露于外部环境条件，则就可能损坏铜。
在焊接区结构涉及通过探针元件对焊接区施加传送到集成电路内基于物理连接的下面薄层的机械力的情况下会出现另一问题。在下面的低杨氏模量绝缘材料不能承受像这样由力传送引起的应力。由于拉得很长的互连的杠杆作用引起的施加力增大可以导致在例如通路到金属界面等等的集成电路内半导体器件的机械故障和可能发生的电故障。像这样由增大的施加力引起的破坏一般发生在界面上。当更柔软的绝缘材料(具有较低的杨氏模量或倔服强度)包围被加压力的元件时也可能增大由施加的力引起的破坏。
所以，对复合焊接区结构有机械上加固的需要，以致用探针探测操作或封装操作期间施加的力没有引起焊接区的损坏或没有传送到可能发生其他不希望有的影响的集成电路内部部分。
附图的简略描述
用例子而不局限附图的方法说明本发明，在附图中，相同的标记表示同样的元件，并且在附图中：
图1、举例说明包括根据本发明特定实施例形成部分的复合焊接区的一部分半导体芯片的横截面图；
图2、举例说明包括根据本发明特定实施例的复合焊接区的半导体芯片的横截面图；
图3、举例说明根据本发明的另一实施例所完成的复合焊接区的横截面图；
图4、图解说明图3所举例说明的焊接区的自表面向下的视图；
图5、举例说明相当于与一些根据本发明的复合焊接区对应的一些潜在支撑结构图形的一些自表面向下的视图；和
图6、举例说明根据本发明特定实施例制作复合焊接区的方法流程图。
精通技术的人知道，为了简单和清楚地用图解说明图中的一些元件而不一定按比例绘图。例如，为了有助于提高对本发明实施例的理解，图中某些元件的尺寸可能相对于其他元件被放大了。
概括来说，本发明提供耐在用探针探测操作、封装操作或利用焊接区的其他类似的后制作操作期间可能施加的外力的复合焊接区。复合焊接区包括在半导体衬底上形成的非自纯化导电焊接区。然后在导电焊接区上形成绝缘层。去除部分绝缘层以使绝缘层成为有穿孔的而露出部分导电焊接区。剩余的绝缘层形成覆盖焊接区的支撑结构。然后形成叠加在焊接区结构上的自钝化导电封顶层，此外绝缘层中的穿孔可以供封顶层和在下面的焊接区的暴露部分之间电接触之用。支撑结构构成保护封顶层和焊接区之间界面的机械阻挡层。当支撑结构仍然与绝缘层的未去除部分连接时，因为被支撑结构缓冲的力是分布在绝缘层二旁边而不是集中在焊接区位置上，所以获得额外的机械强度。
在用探针探测的操作中，支撑结构防止像针之类的探针元件穿透封顶层而扰乱封顶层和导电焊接区(bond pad)之间的界面。如果探针终于还是使大量的封顶层移动，则因为导电材料保留在绝缘层的穿孔里所以焊接线之间或者其他封装结构之间的电接触还是可以保持的。除了这些优点外，通过使穿孔的绝缘层构形以使施加于封顶层的力分布在绝缘层二旁边的较大表面面积，大大地减小由于施力点引起的集成电路内部损坏的潜在可能。
在一种替代的实施例中，通过采用包在复合焊接区中的导电焊接区部分(镶嵌的金属部分)内的绝缘柱获得额外的机械支撑。像这样的柱栓在抛光操作期间通常用于缓解表面凹陷(不平整金属去除)的技术。当把柱栓设置在穿孔的绝缘层支撑结构下方时进一步改进额外的机械支撑。在某些情况下，柱栓也可以增强封顶层与在下面的焊接区结构的粘结作用。
参阅图1-6能够更好地理解本发明。图1包括一部分半导体器件的横截面图的图解说明。半导体器件包括半导体衬底100、场隔离区102和在半导体衬底内形成的掺杂区104。栅绝缘层106覆盖在部分半导体器件衬底100上面，而栅电极110覆盖在栅绝缘层106上面。邻近栅电极层104的侧壁形成垫圈108。使第一层间绝缘层(IDL)116构成图形而形成被填满粘结层112(可选的)和接触填料114的接触孔。粘结层112一般是难熔金属、难熔金属氮化物或者难熔金属或其氮化物的混合物。接触填料114一般包括钨、多晶硅或诸如此类。在沉积粘结层112和接触填料114以后，抛光衬底，以去除没有夹在接触孔当中的粘结层112和接触填料114的部分而形成导电针形接点111。
然后形成叠置在层间绝缘(ILD)层116和导电针形接点111上面的第一层面互连120。采用开槽和抛光工艺方法的配合或者换个办法采用构成图形和蚀刻工艺方法的配合能够形成第一层面互连120。如果采用铜形成第一层面互连120，则可以邻接第一层面互连120形成阻挡层(未表示出)以减少铜进入到周围材料的迁移。
根据同一实施例，使第一层面互连120形成为单镶嵌结构。因此，通过先沉积一部分第二ILD118，然后蚀刻第二ILD118而形成构槽，在构槽中沉积第一层面互连120的材料。只要发现第一层面互连120沉积，便用抛光工艺方法去除剩留在被形成的构槽外面的多余材料。
假定第一层面互连120已形成为单镶嵌结构，则继抛光步骤之后形成第二ILD118的剩余部分。然后在第二ILD118内形成能包括导电粘结/阻挡薄膜122和铜材料124的互连126。粘结/阻挡薄膜122一般是难熔金属、难熔金属氮化物或者难熔金属或其氮化物的混合物。铜填料124一般是铜或者铜含量至少为90原子百分比的铜合金。铜能够与镁、硫、碳或诸如此类合金化以改进互连的粘结、电迁移或其他性能。虽然在本实施例中图解说明互连126为双镶嵌互连，但是精通技术的人知道用另一种方法能够使互连126形成为与单镶嵌互连或者平版印刷构成图形和蚀刻的互连配合的导电针形接点。在沉积粘结/阻挡薄膜122和铜填料124以后，抛光衬底以去除没有夹在双镶嵌孔之中的粘结/阻挡薄膜122和铜填料124而形成图1中所示的双镶嵌互连。
然后在第二ILD118和双镶嵌互连126上形成第三ILD130。第三ILD130和任何其他在下面的绝缘层可以包含像四乙基原硅酸盐(TEOS)、氮化硅、氮氧化硅、磷硅酸盐玻璃(PSG)、硼磷硅酸盐玻璃(BPSG)之类材料、像干凝胶、气凝胶、聚酰亚胺、聚对苯二亚甲基、双环丁烷(biscyclobutenes)、碳氟化合物、聚芳基乙醚基料、旋涂玻璃、聚硅氧烷、硅倍半噁烷(silsesquioxanes)、含碳氧化硅、含碳和氢的氧化硅或其混合物之类的低介电常数材料。第三LID130和任何其他在下面的绝缘层可以包含具有杨氏模量小于大约50吉帕的材料。在其他的实施例中，可以由其他具有较低屈服强度而所以是更柔韧的材料组成第三ILD130。虽然图1中用举例所说明的半导体器件部分包含三层面互连层，但是许多互连间能间置在器件层和用来设置通向半导体器件的入口的焊接区的最顶层之中。在图1用举例所说明的实施例中，在最上面的(第三)ILD130内制作焊接区。
然后在第三ILD130内以类似于第二ILD118内用来形成互连126的方法形成包括导电焊接区134的最上面的互连层133。一般来说，最上面的互连层133主要包含铜，但是在其他一些实施例中，可以采用像铝之类的自钝化材料。像互连126的铜填料的情况一样，可以用导电的粘结/阻挡薄膜132使用来形成最上面的互连层133的填料和第三ILD130隔离。根据同一实施例，使导电焊接区134位置控制在离用来接触互连126的通路(层间互连)某个距离。在图1中图解所说明的距离x表示这个距离。
然后在最上面的互连层133和导电焊接区134上形成绝缘(钝化)层136。一般说来，由含氮化合物组成绝缘层。换言之，绝缘层能够包含氧化硅、氮氧化硅、含氢和碳的氧化硅或诸如此类。去除一些绝缘层部分以在绝缘层内形成包括许多支撑结构138的穿孔区域。使穿孔区域构成叠置在形成复合焊接区的面积内的导电焊接区134上以致露出一部分导电焊接区134。在一些实施例中，大多数支撑结构138保持与没有被去除的绝缘层134部分连接。
在图2中继续形成复合焊接区结构。图2举例说明图1中用举例说明的半导体器件部分在后续工艺处理步骤以后的横截面图。根据同一实施例，在绝缘层136的穿孔部分内形成可以包括钽、钛、钨、铬或这些材料的氮化物的阻挡层202。然后在大多数支撑结构138上形成导电封顶层204。一般来说，导电封顶层204包含像铝之类的自钝化材料。导电封顶层204也可以包含镍或钯。接着可以把导电封顶层204连接到导线接头或者在半导体器件封装期间使导电封顶层204与导电凸出部电连接。
绝缘层136中的穿孔使组成封顶层204的自钝化材料和导电焊接区134之间电接触成为可能。然而，支撑结构138构成封顶层204和导电焊接区134之间形成的界面的机械保护罩。注意到如果使支撑结构138与绝缘层136的未去除部分互连，则获得半导体器件对外力的附加保护罩。这是因为施加在复合焊接区中的封顶层204上的外力将分布在绝缘层136的两旁边。该外力可以是由用探针探测、导线焊接、碰撞、封装等等引起的。
为了为在半导体器件和用于与半导体器件连接的封装材料之间的应力消除创造条件，在完成复合焊接区结构以后在半导体器件上可以形成聚酰亚胺层206。包裹聚酰亚胺层206是视使用的特定制造工艺过程而定的可选择的步骤。
图3图解说明在复合焊接区结构中的导电焊接区部分134内包括许多绝缘柱302的发明替代实施例。如图解所说明的那样，一般把绝缘柱302设置在绝缘层136中的穿孔部分内支撑结构138正下方。把绝缘柱302设置在支撑结构138正下方增强支撑结构138构成的机械支撑以便提高复合焊接区结构的坚固性。坚固性的提高是由于力从支撑结构138通过绝缘柱302传递到第三ILD130所造成的。在支撑结构138正下方配置绝缘柱302也有助于不减少为封顶层204和导电焊接区134间界面提供的接触面积。
图4图解说明图3中的复合焊接区结构的自顶向下视图(为了图解说明假定封顶层是透明的)。如图解所说明的那样，绝缘柱302被包在复合焊接区结构内呈阵列格式。包含在绝缘层136的穿孔部分内的支撑结构138呈现为横穿焊接区结构长度的绝缘材料条。虽然一般把图4中的焊接区结构表示成正方形，但是可以做成各种各样形状的焊接区结构，这对于精通技术的人来说是显而易见的。
图5图解说明可以应用于对这些复合焊接区结构中的两个部分之间的界面提供一定程度的机械隔离同时使封顶层与复合焊接区结构中的焊接区部分电连接的许多替代的穿孔图形。每个不同的图形可能对不同的实施例蕴含最理想的优点。穿孔排列图形510构成封顶层和焊接区部分间通路连接阵列。因为在穿孔排列图形510中大部分钝化(绝缘)层被原封不动保留，所以在使用这样的图形时的力容许极限会相对地大于图解说明中的其他图形。
浮置网格图形520设置一种有效地浮动而没有与剩留的绝缘层部分物理连接的游离支撑结构部分。浮置网格图形520相对于可能施加于封顶层的垂直应力提供附加的强度。然而，从保持与剩留的绝缘层部分连接状态的那些图形中减少了分布施加力的面积。
变密度网格结构530可以提供在使探针或其他的测试装置调整到焊接区结构中的特定部分方面的优点。实现上述的优点归因于绝缘材料的有无会造成金属层参差不齐的构形。支撑结构之间的大间隙可以允许金属以能够在较大间隙内保留较少金属材料而所以保持金属填满间隙而不增高到绝缘支撑结构的较浅构形的不平坦方式沉积。一般说来，设计成在复合焊接区结构的中心部分或其他所希望的部位上形成凹坑的图案，因此探针会移向这样的凹陷处。
浮置自由端网格图案540在保持与总体绝缘层物理连接时可以提供由浮置网格图案520相对于垂直应力构成的一些优点。因此，虽然垂直应力强度与浮置网格图形520的垂直应力强度不一样大，但是使施加力的分布保持在较宽的面积上。
变密度人字形网格550可以提供一种用于使探针或类似的测试装置转向焊接区结构上特定位置的替代图形。在变密度人字形网格550的情况中，通过形成沟槽即定向的金属材料道获得变密度人字形网格550以使探针将接触结构而通过沟槽对准焊接区中的特定区域。
图6举例说明用于形成包括复合焊接区结构在内的半导体器件的方法流程图。该方法从在半导体衬底上形成导电焊接区的步骤602开始。一般来说，导电焊接区在组分上主要是铜。导电焊接区的制作包括在导电焊接区内形成绝缘柱。正如对图3所描述的那样，绝缘柱可以对焊合焊接区结构提供附加的机械支撑。
在步骤604时，在导电焊接区上形成绝缘层(钝化层)。在步骤606时，去除部分绝缘层而形成许多叠置在焊接区上面的支撑结构。一般说来，通过蚀刻绝缘层来完成去除该部分的步骤。去除部分绝缘层并且使允许电连接的一部分焊接区露出。
在步骤608时形成在许多支撑结构上面的导电封顶层。导电封顶层电接触一部分焊接区，电接触发生在已被去除第一绝缘层而露出焊接区的部位。导电封顶层可以包括铝，或者也可以由像镍或铂之类的材料构成导电封顶层。
正如对图2中的横截面所描述的那样，用阻挡层可以使封顶层和导电焊接区隔离。一般是，由像钽、钛、钨、铬或者这些材料的氮化物组成阻挡层。在步骤610时蚀刻封顶层而形成复合焊接区结构。
通过把穿孔的绝缘层夹入封顶层和复合焊接区结构中的焊接区之间，在导电结构之间设置一些物理隔离层面时保持焊结区结构中的导电层之间的电连通性。因此，避免由在先技术的焊接区结构中可能由于探针对封顶层和焊接区间界面的损坏所造成的问题。此外，用自钝化材料形成封顶层保证使由于侵蚀或其他外界引起的影响所造成的破坏减到最低程度。穿孔的绝缘层中的支撑结构还有助缓冲外力而因此避免半导体器件损坏。
在以上的详细说明中，参照具体的实施例描述了发明。然而，精通技术的人知道在没有脱离如在下面的权利要求书中所陈述的本发明范围情况下能够作各种各样的变换和变化。因此，说明书和附图是被看成一种图解说明而不是一种限制性的断定，而意在使所有像这样的变换包括在本发明的范围内。
以上按照具体的实施例描述了益处、其他优点和问题的解决。然而，一些益处、优点、问题的解决和可以使任一益处、优点或解决办法被发现或变得更明确的基本原理不被认作是任一或者所有的权利要求中的关键性要求或者基本的细节或要素。正如在本说明书中采用的措词包括或其任何别的变形那样，意在覆盖非排他的包含，以使包括说明的元件的工艺过程、方法、制品或设备不仅包括这些元件而且可以包括没有特意说明的或者是这样的工艺过程、方法、制品或设备所固有的其他元件。

Claims (10)

1．一种制作半导体器件的方法，其特征在于：
在半导体衬底(100)上形成导电焊接区(134)；
在导电焊接区(134)上形成绝缘层(136)；
去除部分绝缘层(136)，其中绝缘层(136)的去除部分形成叠置在导电焊接区(134)上的多个支撑结构(138)，并且其中绝缘层(136)的去除部分使一部分导电焊接区(134)露出；和
形成叠置在多个支撑结构(138)上的导电封顶层(204)，其中导电封顶层(204)电接触一部分导电焊接区(134)。
2．权利要求1的方法，其中导电焊接区(134)主要包括铜，并且其中导电封顶层(204)包括铝。
3．权利要求1的方法，进一步特征在于在导电焊接区(134)内形成绝缘柱(302)，其中至少一部分支撑结构(138)叠置在一部分绝缘柱(302)上。
4．权利要求1的方法，其中许多支撑结构(138)与绝缘层(136)的来去除部分互连。
5．权利要求4的方法，其中形成的导电焊接区(134)进一步包括在至少一层具有杨氏模量小于约50吉帕斯卡的绝缘层(130、118、116)上形成的导电焊接区(134)。
6．权利要求1的方法，其中导电封顶层(204)包括从由镍和钯组成的组中选出的材料。
7．一种半导体器件，其特征在于：
在半导体衬底(100)上的导电焊接区(134)；
在导电焊接区(134)上的绝缘层(136)；
叠置在导电焊接区(134)上的多个支撑结构(138)；和
叠置在多个支撑结构(138)上的导电封顶层(204)，其中导电封顶层(204)电接触一部分导电焊接区(134)。
8．权利要求7的半导体器件，进一步特点在于在导电焊接区中的绝缘柱(302)，其中多个支撑结构(138)中至少之一的至少一部分叠置在一部分绝缘柱(302)上。
9．权利要求7的半导体器件，其中多个支撑结构(138)中的至少一部分与绝缘层(136)的来去除部分互连。
10．权利要求7的半导体器件，进一步特征在于在导电焊接区(134)下面至少一层绝缘层(130、118、116)具有小于约50吉帕斯卡的杨氏模量。
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