JP2001068658A - 固体撮像装置及びその製造方法 - Google Patents

固体撮像装置及びその製造方法

Info

Publication number
JP2001068658A
JP2001068658A JP24170699A JP24170699A JP2001068658A JP 2001068658 A JP2001068658 A JP 2001068658A JP 24170699 A JP24170699 A JP 24170699A JP 24170699 A JP24170699 A JP 24170699A JP 2001068658 A JP2001068658 A JP 2001068658A
Authority
JP
Japan
Prior art keywords
film
solid
imaging device
state imaging
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24170699A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001068658A5 (https=
Inventor
Koichi Harada
耕一 原田
Yasuhiro Ueda
康弘 上田
Nobuhiko Umetsu
暢彦 梅津
Kazuji Wada
和司 和田
Yoshitetsu Toumiya
祥哲 東宮
Takeshi Matsuda
健 松田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP24170699A priority Critical patent/JP2001068658A/ja
Priority to US09/649,570 priority patent/US8253142B1/en
Publication of JP2001068658A publication Critical patent/JP2001068658A/ja
Publication of JP2001068658A5 publication Critical patent/JP2001068658A5/ja
Priority to US12/102,328 priority patent/US8729650B2/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP24170699A 1999-08-27 1999-08-27 固体撮像装置及びその製造方法 Pending JP2001068658A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP24170699A JP2001068658A (ja) 1999-08-27 1999-08-27 固体撮像装置及びその製造方法
US09/649,570 US8253142B1 (en) 1999-08-27 2000-08-28 Solid-state imaging device and method of fabricating the same
US12/102,328 US8729650B2 (en) 1999-08-27 2008-04-14 Solid-state imaging device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24170699A JP2001068658A (ja) 1999-08-27 1999-08-27 固体撮像装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2001068658A true JP2001068658A (ja) 2001-03-16
JP2001068658A5 JP2001068658A5 (https=) 2006-04-06

Family

ID=17078330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24170699A Pending JP2001068658A (ja) 1999-08-27 1999-08-27 固体撮像装置及びその製造方法

Country Status (2)

Country Link
US (2) US8253142B1 (https=)
JP (1) JP2001068658A (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003051588A (ja) * 2001-08-07 2003-02-21 Sony Corp 固体撮像装置およびその製造方法
JP2007059834A (ja) * 2005-08-26 2007-03-08 Sharp Corp 固体撮像装置およびその製造方法、電子情報機器
US7423307B2 (en) * 2004-12-30 2008-09-09 Dongbu Electronics Co., Ltd. CMOS image sensor and method for fabricating the same
US7732246B2 (en) 2004-12-29 2010-06-08 Dongbu Electronics Co., Ltd. Method for fabricating vertical CMOS image sensor
JP2019047037A (ja) * 2017-09-05 2019-03-22 株式会社東芝 光検出器
JPWO2023047663A1 (https=) * 2021-09-27 2023-03-30

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010238848A (ja) * 2009-03-31 2010-10-21 Sony Corp 固体撮像装置および電子機器
US9091748B2 (en) * 2012-04-18 2015-07-28 Raytheon Company Methods and apparatus for 3D UV imaging

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642377A (en) * 1979-09-14 1981-04-20 Fujitsu Ltd Ultraviolet ray erasable type rewritable read-only memory
JPS57211268A (en) * 1981-06-23 1982-12-25 Fujitsu Ltd Image sensor and manufacture thereof
JPS59182561A (ja) * 1983-03-31 1984-10-17 Mitsubishi Electric Corp 半導体イメ−ジセンサ
JPS60262458A (ja) * 1984-06-11 1985-12-25 Sony Corp 固体撮像装置の製造方法
US4731881A (en) * 1986-06-30 1988-03-15 The United States Of America As Represented By The Secretary Of The Navy Narrow spectral bandwidth, UV solar blind detector
JPH026902A (ja) * 1988-03-22 1990-01-11 Ricoh Co Ltd マイクロレンズ及びその製造方法
EP0380654A1 (en) * 1988-08-01 1990-08-08 EASTMAN KODAK COMPANY (a New Jersey corporation) Lens arrays for light sensitive devices
US4966831A (en) * 1989-04-20 1990-10-30 Eastman Kodak Company Lens arrays for light sensitive devices
KR100357178B1 (ko) * 1999-05-14 2002-10-18 주식회사 하이닉스반도체 고체 촬상 소자 및 그의 제조 방법
JP3166199B2 (ja) * 1990-05-16 2001-05-14 日本電気株式会社 固体撮像装置およびその製造方法
JPH0424964A (ja) * 1990-05-16 1992-01-28 Olympus Optical Co Ltd 固体撮像装置
GB2248964A (en) * 1990-10-17 1992-04-22 Philips Electronic Associated Plural-wavelength infrared detector devices
JPH04275460A (ja) * 1991-03-04 1992-10-01 Sony Corp 密着型固体撮像装置
JPH04346472A (ja) 1991-05-24 1992-12-02 Mitsubishi Electric Corp 固体撮像素子及びその製造方法
JPH04349664A (ja) 1991-05-27 1992-12-04 Fujitsu Ltd 固体撮像素子及びその製造方法
JPH0555535A (ja) * 1991-08-28 1993-03-05 Nec Corp 固体撮像素子およびその製造方法
JP3153925B2 (ja) * 1992-02-03 2001-04-09 ソニー株式会社 固体撮像素子及びその製法
US5514888A (en) * 1992-05-22 1996-05-07 Matsushita Electronics Corp. On-chip screen type solid state image sensor and manufacturing method thereof
JPH0645572A (ja) * 1992-07-22 1994-02-18 Nikon Corp マイクロレンズを備えた固体撮像素子
JP2833941B2 (ja) * 1992-10-09 1998-12-09 三菱電機株式会社 固体撮像装置とその製造方法
JP3012100B2 (ja) * 1992-12-07 2000-02-21 松下電子工業株式会社 固体撮像装置の製造方法
JP3291805B2 (ja) * 1993-01-26 2002-06-17 ソニー株式会社 固体撮像装置の製造方法
US5384231A (en) * 1993-08-24 1995-01-24 Eastman Kodak Company Fabricating lens array structures for imaging devices
JPH08125166A (ja) * 1994-10-19 1996-05-17 Toshiba Corp 固体撮像装置およびその製造方法
JPH08148665A (ja) * 1994-11-22 1996-06-07 Nec Corp 固体撮像素子
JP4226073B2 (ja) * 1995-06-30 2009-02-18 株式会社資生堂 乳化組成物
KR0172849B1 (ko) * 1995-08-02 1999-02-01 문정환 고체촬상소자 및 그의 제조방법
US5614950A (en) * 1995-08-02 1997-03-25 Lg Semicon Co., Ltd. CCD image sensor and method of preventing a smear phenomenon in the sensor
JPH0964325A (ja) * 1995-08-23 1997-03-07 Sony Corp 固体撮像素子とその製造方法
JP3813215B2 (ja) * 1995-09-25 2006-08-23 ソニー株式会社 光学部品およびその製造方法
JP2917920B2 (ja) * 1996-06-27 1999-07-12 日本電気株式会社 固体撮像装置およびその製造方法
JP3003597B2 (ja) * 1996-11-18 2000-01-31 日本電気株式会社 固体撮像素子
JPH10189929A (ja) * 1996-12-20 1998-07-21 Sony Corp 固体撮像素子
JP3674209B2 (ja) * 1997-01-23 2005-07-20 ソニー株式会社 固体撮像装置及びその製造方法
JP3070513B2 (ja) * 1997-04-07 2000-07-31 日本電気株式会社 固体撮像素子及びその製造方法
JP3447510B2 (ja) * 1997-04-09 2003-09-16 Ｎｅｃエレクトロニクス株式会社 固体撮像素子、その製造方法及び固体撮像装置
JP3695082B2 (ja) * 1997-07-11 2005-09-14 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法および撮像装置
JPH1187675A (ja) * 1997-07-16 1999-03-30 Sony Corp 固体撮像素子の製造方法および固体撮像素子
JPH1168074A (ja) * 1997-08-13 1999-03-09 Sony Corp 固体撮像素子
JP3620237B2 (ja) * 1997-09-29 2005-02-16 ソニー株式会社 固体撮像素子
JP3677970B2 (ja) * 1997-10-16 2005-08-03 ソニー株式会社 固体撮像素子とその製造方法
JPH11223707A (ja) * 1998-02-06 1999-08-17 Nikon Corp 光学部材及びその製造方法
JP3988239B2 (ja) * 1998-03-19 2007-10-10 ソニー株式会社 固体撮像素子及びその製造方法
JP4232213B2 (ja) * 1998-04-15 2009-03-04 ソニー株式会社 固体撮像素子
JP3015875B2 (ja) * 1998-05-19 2000-03-06 工業技術院長 自動車運転時の車線逸脱検出方法及び検出装置
JP2000068491A (ja) 1998-08-24 2000-03-03 Nikon Corp 撮像素子、撮像素子の製造方法および露光装置
US6171883B1 (en) * 1999-02-18 2001-01-09 Taiwan Semiconductor Manufacturing Company Image array optoelectronic microelectronic fabrication with enhanced optical stability and method for fabrication thereof
US6221687B1 (en) * 1999-12-23 2001-04-24 Tower Semiconductor Ltd. Color image sensor with embedded microlens array
JP4275460B2 (ja) * 2003-05-29 2009-06-10 カルソニックコンプレッサー株式会社 気体圧縮機

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003051588A (ja) * 2001-08-07 2003-02-21 Sony Corp 固体撮像装置およびその製造方法
US7732246B2 (en) 2004-12-29 2010-06-08 Dongbu Electronics Co., Ltd. Method for fabricating vertical CMOS image sensor
US7423307B2 (en) * 2004-12-30 2008-09-09 Dongbu Electronics Co., Ltd. CMOS image sensor and method for fabricating the same
US8049257B2 (en) 2004-12-30 2011-11-01 Dongbu Electronics Co., Ltd. CMOS image sensor
JP2007059834A (ja) * 2005-08-26 2007-03-08 Sharp Corp 固体撮像装置およびその製造方法、電子情報機器
JP2019047037A (ja) * 2017-09-05 2019-03-22 株式会社東芝 光検出器
JPWO2023047663A1 (https=) * 2021-09-27 2023-03-30
WO2023047663A1 (ja) * 2021-09-27 2023-03-30 ソニーセミコンダクタソリューションズ株式会社 受光素子および電子機器

Also Published As

Publication number Publication date
US8253142B1 (en) 2012-08-28
US8729650B2 (en) 2014-05-20
US20080315340A1 (en) 2008-12-25

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