JPWO2023047663A1 - - Google Patents
Info
- Publication number
- JPWO2023047663A1 JPWO2023047663A1 JP2023549354A JP2023549354A JPWO2023047663A1 JP WO2023047663 A1 JPWO2023047663 A1 JP WO2023047663A1 JP 2023549354 A JP2023549354 A JP 2023549354A JP 2023549354 A JP2023549354 A JP 2023549354A JP WO2023047663 A1 JPWO2023047663 A1 JP WO2023047663A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021157295 | 2021-09-27 | ||
| PCT/JP2022/014049 WO2023047663A1 (ja) | 2021-09-27 | 2022-03-24 | 受光素子および電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023047663A1 true JPWO2023047663A1 (https=) | 2023-03-30 |
Family
ID=85720388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023549354A Pending JPWO2023047663A1 (https=) | 2021-09-27 | 2022-03-24 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250133848A1 (https=) |
| JP (1) | JPWO2023047663A1 (https=) |
| CN (1) | CN117795689A (https=) |
| TW (1) | TW202315149A (https=) |
| WO (1) | WO2023047663A1 (https=) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000068491A (ja) * | 1998-08-24 | 2000-03-03 | Nikon Corp | 撮像素子、撮像素子の製造方法および露光装置 |
| JP2001068658A (ja) * | 1999-08-27 | 2001-03-16 | Sony Corp | 固体撮像装置及びその製造方法 |
| WO2006028128A1 (ja) * | 2004-09-09 | 2006-03-16 | Matsushita Electric Industrial Co., Ltd. | 固体撮像素子 |
| JP2008306160A (ja) * | 2007-05-07 | 2008-12-18 | Sony Corp | 固体撮像装置とその製造方法および撮像装置 |
| US20120038015A1 (en) * | 2010-08-13 | 2012-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Antireflective layer for backside illuminated image sensor and method of manufacturing same |
| WO2019220897A1 (ja) * | 2018-05-18 | 2019-11-21 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および電子機器並びに撮像素子の駆動方法 |
| WO2019230354A1 (ja) * | 2018-05-31 | 2019-12-05 | ソニー株式会社 | 光電変換素子および光電変換素子の製造方法 |
| JP2021132086A (ja) * | 2020-02-19 | 2021-09-09 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び電子機器 |
-
2022
- 2022-03-24 JP JP2023549354A patent/JPWO2023047663A1/ja active Pending
- 2022-03-24 WO PCT/JP2022/014049 patent/WO2023047663A1/ja not_active Ceased
- 2022-03-24 CN CN202280055065.9A patent/CN117795689A/zh active Pending
- 2022-03-24 US US18/691,999 patent/US20250133848A1/en active Pending
- 2022-04-08 TW TW111113363A patent/TW202315149A/zh unknown
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000068491A (ja) * | 1998-08-24 | 2000-03-03 | Nikon Corp | 撮像素子、撮像素子の製造方法および露光装置 |
| JP2001068658A (ja) * | 1999-08-27 | 2001-03-16 | Sony Corp | 固体撮像装置及びその製造方法 |
| WO2006028128A1 (ja) * | 2004-09-09 | 2006-03-16 | Matsushita Electric Industrial Co., Ltd. | 固体撮像素子 |
| JP2008306160A (ja) * | 2007-05-07 | 2008-12-18 | Sony Corp | 固体撮像装置とその製造方法および撮像装置 |
| US20120038015A1 (en) * | 2010-08-13 | 2012-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Antireflective layer for backside illuminated image sensor and method of manufacturing same |
| WO2019220897A1 (ja) * | 2018-05-18 | 2019-11-21 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および電子機器並びに撮像素子の駆動方法 |
| WO2019230354A1 (ja) * | 2018-05-31 | 2019-12-05 | ソニー株式会社 | 光電変換素子および光電変換素子の製造方法 |
| JP2021132086A (ja) * | 2020-02-19 | 2021-09-09 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023047663A1 (ja) | 2023-03-30 |
| US20250133848A1 (en) | 2025-04-24 |
| CN117795689A (zh) | 2024-03-29 |
| TW202315149A (zh) | 2023-04-01 |
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