TW202315149A - 受光元件及電子機器 - Google Patents

受光元件及電子機器 Download PDF

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Publication number
TW202315149A
TW202315149A TW111113363A TW111113363A TW202315149A TW 202315149 A TW202315149 A TW 202315149A TW 111113363 A TW111113363 A TW 111113363A TW 111113363 A TW111113363 A TW 111113363A TW 202315149 A TW202315149 A TW 202315149A
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TW
Taiwan
Prior art keywords
light
oxide film
metal oxide
receiving element
film
Prior art date
Application number
TW111113363A
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English (en)
Chinese (zh)
Inventor
出木場透
納土晋一郎
小島尚
小野雄馬
大庭義行
Original Assignee
日商索尼半導體解決方案公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 日商索尼半導體解決方案公司 filed Critical 日商索尼半導體解決方案公司
Publication of TW202315149A publication Critical patent/TW202315149A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
TW111113363A 2021-09-27 2022-04-08 受光元件及電子機器 TW202315149A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021157295 2021-09-27
JP2021-157295 2021-09-27

Publications (1)

Publication Number Publication Date
TW202315149A true TW202315149A (zh) 2023-04-01

Family

ID=85720388

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111113363A TW202315149A (zh) 2021-09-27 2022-04-08 受光元件及電子機器

Country Status (5)

Country Link
US (1) US20250133848A1 (https=)
JP (1) JPWO2023047663A1 (https=)
CN (1) CN117795689A (https=)
TW (1) TW202315149A (https=)
WO (1) WO2023047663A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000068491A (ja) * 1998-08-24 2000-03-03 Nikon Corp 撮像素子、撮像素子の製造方法および露光装置
JP2001068658A (ja) * 1999-08-27 2001-03-16 Sony Corp 固体撮像装置及びその製造方法
EP1816677A1 (en) * 2004-09-09 2007-08-08 Matsushita Electric Industrial Co., Ltd. Solid-state image pickup element
TWI413240B (zh) * 2007-05-07 2013-10-21 新力股份有限公司 A solid-state imaging device, a manufacturing method thereof, and an image pickup device
US8377733B2 (en) * 2010-08-13 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Antireflective layer for backside illuminated image sensor and method of manufacturing same
CN112119502B (zh) * 2018-05-18 2024-12-17 索尼半导体解决方案公司 成像元件、电子设备和成像元件的驱动方法
JP7312166B2 (ja) * 2018-05-31 2023-07-20 ソニーグループ株式会社 光電変換素子および光電変換素子の製造方法
JP2021132086A (ja) * 2020-02-19 2021-09-09 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器

Also Published As

Publication number Publication date
WO2023047663A1 (ja) 2023-03-30
US20250133848A1 (en) 2025-04-24
JPWO2023047663A1 (https=) 2023-03-30
CN117795689A (zh) 2024-03-29

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