CN117795689A - 光接收器件和电子设备 - Google Patents

光接收器件和电子设备 Download PDF

Info

Publication number
CN117795689A
CN117795689A CN202280055065.9A CN202280055065A CN117795689A CN 117795689 A CN117795689 A CN 117795689A CN 202280055065 A CN202280055065 A CN 202280055065A CN 117795689 A CN117795689 A CN 117795689A
Authority
CN
China
Prior art keywords
metal oxide
oxide film
light receiving
light
receiving device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280055065.9A
Other languages
English (en)
Chinese (zh)
Inventor
出木场透
纳土晋一郎
小岛尚
小野雄马
大庭义行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN117795689A publication Critical patent/CN117795689A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN202280055065.9A 2021-09-27 2022-03-24 光接收器件和电子设备 Pending CN117795689A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021157295 2021-09-27
JP2021-157295 2021-09-27
PCT/JP2022/014049 WO2023047663A1 (ja) 2021-09-27 2022-03-24 受光素子および電子機器

Publications (1)

Publication Number Publication Date
CN117795689A true CN117795689A (zh) 2024-03-29

Family

ID=85720388

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280055065.9A Pending CN117795689A (zh) 2021-09-27 2022-03-24 光接收器件和电子设备

Country Status (5)

Country Link
US (1) US20250133848A1 (https=)
JP (1) JPWO2023047663A1 (https=)
CN (1) CN117795689A (https=)
TW (1) TW202315149A (https=)
WO (1) WO2023047663A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000068491A (ja) * 1998-08-24 2000-03-03 Nikon Corp 撮像素子、撮像素子の製造方法および露光装置
JP2001068658A (ja) * 1999-08-27 2001-03-16 Sony Corp 固体撮像装置及びその製造方法
EP1816677A1 (en) * 2004-09-09 2007-08-08 Matsushita Electric Industrial Co., Ltd. Solid-state image pickup element
TWI413240B (zh) * 2007-05-07 2013-10-21 新力股份有限公司 A solid-state imaging device, a manufacturing method thereof, and an image pickup device
US8377733B2 (en) * 2010-08-13 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Antireflective layer for backside illuminated image sensor and method of manufacturing same
CN112119502B (zh) * 2018-05-18 2024-12-17 索尼半导体解决方案公司 成像元件、电子设备和成像元件的驱动方法
JP7312166B2 (ja) * 2018-05-31 2023-07-20 ソニーグループ株式会社 光電変換素子および光電変換素子の製造方法
JP2021132086A (ja) * 2020-02-19 2021-09-09 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器

Also Published As

Publication number Publication date
WO2023047663A1 (ja) 2023-03-30
US20250133848A1 (en) 2025-04-24
JPWO2023047663A1 (https=) 2023-03-30
TW202315149A (zh) 2023-04-01

Similar Documents

Publication Publication Date Title
US10115762B2 (en) Solid-state image pickup device, method of manufacturing thereof, and electronic apparatus
US8183603B2 (en) Solid-state imaging device for inhibiting dark current
CN102386194B (zh) 固体摄像元件及其制造方法、固体摄像装置和摄像装置
CN108717940B (zh) 摄像装置和电子设备
CN102208427B (zh) 固体摄像器件、用于制造固体摄像器件的方法和电子设备
US8872953B2 (en) Solid-state imaging device, manufacturing method thereof, camera, and electronic device
KR101476473B1 (ko) 고체 촬상 장치 및 촬상 장치
CN106952932B (zh) 固态成像装置及其制造方法和电子设备
TWI443814B (zh) 固態影像拾取元件及其製造方法，及包含其之固態影像拾取裝置
US10854660B2 (en) Solid-state image capturing element to suppress dark current, manufacturing method thereof, and electronic device
US10991734B2 (en) Imaging device and electronic device
CN102208422A (zh) 固体摄像器件、固体摄像器件制造方法以及电子装置
CN104377215A (zh) 摄像元件和摄像装置
KR20090071415A (ko) 고체 촬상 장치와 그 제조 방법 및 촬상 장치
US10461119B2 (en) Solid-state imaging device, imaging system, and method for manufacturing solid-state imaging device
CN117795689A (zh) 光接收器件和电子设备
KR100790588B1 (ko) 광학 블랙 픽셀, 그를 갖는 이미지 센서 및 그의 오프셋 및리드 아웃 잡음 제거 방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination