JP2000133631A - 窒化ケイ素膜の選択的腐食組成物および方法 - Google Patents

窒化ケイ素膜の選択的腐食組成物および方法

Info

Publication number
JP2000133631A
JP2000133631A JP11240647A JP24064799A JP2000133631A JP 2000133631 A JP2000133631 A JP 2000133631A JP 11240647 A JP11240647 A JP 11240647A JP 24064799 A JP24064799 A JP 24064799A JP 2000133631 A JP2000133631 A JP 2000133631A
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JP
Japan
Prior art keywords
corrosion
silicon
composition
solution
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11240647A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000133631A5 (enExample
Inventor
Thomas B Hackett
ビー ハケット トーマス
Zach Ii Hatcher
ハッチャー セカンド ザック
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ashland Inc
Original Assignee
Ashland Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ashland Inc filed Critical Ashland Inc
Publication of JP2000133631A publication Critical patent/JP2000133631A/ja
Publication of JP2000133631A5 publication Critical patent/JP2000133631A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
JP11240647A 1998-08-28 1999-08-27 窒化ケイ素膜の選択的腐食組成物および方法 Pending JP2000133631A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/141,897 US6162370A (en) 1998-08-28 1998-08-28 Composition and method for selectively etching a silicon nitride film
US09/141897 1998-08-28

Publications (2)

Publication Number Publication Date
JP2000133631A true JP2000133631A (ja) 2000-05-12
JP2000133631A5 JP2000133631A5 (enExample) 2006-09-07

Family

ID=22497714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11240647A Pending JP2000133631A (ja) 1998-08-28 1999-08-27 窒化ケイ素膜の選択的腐食組成物および方法

Country Status (10)

Country Link
US (2) US6162370A (enExample)
EP (1) EP0989597B1 (enExample)
JP (1) JP2000133631A (enExample)
KR (1) KR100741250B1 (enExample)
AT (1) ATE254337T1 (enExample)
CA (1) CA2279786C (enExample)
DE (1) DE69912712T2 (enExample)
ES (1) ES2210922T3 (enExample)
SG (1) SG85120A1 (enExample)
TW (1) TW576865B (enExample)

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JP2007318057A (ja) * 2006-04-28 2007-12-06 Tosoh Corp エッチング用組成物及びエッチング方法
JP2008047796A (ja) * 2006-08-21 2008-02-28 Tosoh Corp エッチング用組成物及びエッチング方法
JP2008311436A (ja) * 2007-06-14 2008-12-25 Tosoh Corp エッチング用組成物及びエッチング方法
JP2009206419A (ja) * 2008-02-29 2009-09-10 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2010515245A (ja) * 2006-12-21 2010-05-06 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 窒化ケイ素の選択的除去のための組成物および方法
JP2014072389A (ja) * 2012-09-28 2014-04-21 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
KR20140079267A (ko) 2012-12-18 2014-06-26 솔브레인 주식회사 식각 조성물, 식각 방법 및 반도체 소자
JP2016092392A (ja) * 2014-10-30 2016-05-23 ラムテクノロジー株式会社Ｒａｍ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．，Ｌｔｄ． 窒化膜エッチング組成物およびそれを用いた半導体装置の製造方法
JP2016519424A (ja) * 2013-03-15 2016-06-30 ティーイーエル エフエスアイ，インコーポレイティド 加熱されたエッチング溶液を供する処理システム及び方法

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JP2008311436A (ja) * 2007-06-14 2008-12-25 Tosoh Corp エッチング用組成物及びエッチング方法
JP2009206419A (ja) * 2008-02-29 2009-09-10 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2014072389A (ja) * 2012-09-28 2014-04-21 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
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KR20140079267A (ko) 2012-12-18 2014-06-26 솔브레인 주식회사 식각 조성물, 식각 방법 및 반도체 소자
KR20220024378A (ko) 2012-12-18 2022-03-03 솔브레인 주식회사 식각 조성물, 식각 방법 및 반도체 소자
JP2016519424A (ja) * 2013-03-15 2016-06-30 ティーイーエル エフエスアイ，インコーポレイティド 加熱されたエッチング溶液を供する処理システム及び方法
JP2016092392A (ja) * 2014-10-30 2016-05-23 ラムテクノロジー株式会社Ｒａｍ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．，Ｌｔｄ． 窒化膜エッチング組成物およびそれを用いた半導体装置の製造方法

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DE69912712D1 (de) 2003-12-18
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CA2279786C (en) 2009-06-30
TW576865B (en) 2004-02-21
CA2279786A1 (en) 2000-02-28
US6303514B1 (en) 2001-10-16
KR100741250B1 (ko) 2007-07-19
EP0989597B1 (en) 2003-11-12
ATE254337T1 (de) 2003-11-15
DE69912712T2 (de) 2004-09-23
SG85120A1 (en) 2001-12-19
US6162370A (en) 2000-12-19
ES2210922T3 (es) 2004-07-01

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