KR100741250B1 - 질화 규소 필름을 선택적으로 에칭하기 위한 조성물 및 방법 - Google Patents

질화 규소 필름을 선택적으로 에칭하기 위한 조성물 및 방법 Download PDF

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Publication number
KR100741250B1
KR100741250B1 KR1019990035773A KR19990035773A KR100741250B1 KR 100741250 B1 KR100741250 B1 KR 100741250B1 KR 1019990035773 A KR1019990035773 A KR 1019990035773A KR 19990035773 A KR19990035773 A KR 19990035773A KR 100741250 B1 KR100741250 B1 KR 100741250B1
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South Korea
Prior art keywords
etching
silicon
ppm
acid
phosphoric acid
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Expired - Fee Related
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KR1019990035773A
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Korean (ko)
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KR20000017570A (ko
Inventor
토마스 비. 하케트
쟈크3세 헤쳐
Original Assignee
에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
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Publication of KR20000017570A publication Critical patent/KR20000017570A/ko
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Publication of KR100741250B1 publication Critical patent/KR100741250B1/ko
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
KR1019990035773A 1998-08-28 1999-08-27 질화 규소 필름을 선택적으로 에칭하기 위한 조성물 및 방법 Expired - Fee Related KR100741250B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/141,897 US6162370A (en) 1998-08-28 1998-08-28 Composition and method for selectively etching a silicon nitride film
US9/141,897 1998-08-28
US09/141,897 1998-08-28

Publications (2)

Publication Number Publication Date
KR20000017570A KR20000017570A (ko) 2000-03-25
KR100741250B1 true KR100741250B1 (ko) 2007-07-19

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Application Number Title Priority Date Filing Date
KR1019990035773A Expired - Fee Related KR100741250B1 (ko) 1998-08-28 1999-08-27 질화 규소 필름을 선택적으로 에칭하기 위한 조성물 및 방법

Country Status (10)

Country Link
US (2) US6162370A (enExample)
EP (1) EP0989597B1 (enExample)
JP (1) JP2000133631A (enExample)
KR (1) KR100741250B1 (enExample)
AT (1) ATE254337T1 (enExample)
CA (1) CA2279786C (enExample)
DE (1) DE69912712T2 (enExample)
ES (1) ES2210922T3 (enExample)
SG (1) SG85120A1 (enExample)
TW (1) TW576865B (enExample)

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Publication number Publication date
JP2000133631A (ja) 2000-05-12
EP0989597A1 (en) 2000-03-29
DE69912712D1 (de) 2003-12-18
KR20000017570A (ko) 2000-03-25
CA2279786C (en) 2009-06-30
TW576865B (en) 2004-02-21
CA2279786A1 (en) 2000-02-28
US6303514B1 (en) 2001-10-16
EP0989597B1 (en) 2003-11-12
ATE254337T1 (de) 2003-11-15
DE69912712T2 (de) 2004-09-23
SG85120A1 (en) 2001-12-19
US6162370A (en) 2000-12-19
ES2210922T3 (es) 2004-07-01

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