JP2000036620A5 - - Google Patents

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Publication number
JP2000036620A5
JP2000036620A5 JP1999149259A JP14925999A JP2000036620A5 JP 2000036620 A5 JP2000036620 A5 JP 2000036620A5 JP 1999149259 A JP1999149259 A JP 1999149259A JP 14925999 A JP14925999 A JP 14925999A JP 2000036620 A5 JP2000036620 A5 JP 2000036620A5
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JP
Japan
Prior art keywords
buffer layer
substructure
semiconductor device
indium
buffer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999149259A
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English (en)
Japanese (ja)
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JP2000036620A (ja
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Publication date
Application filed filed Critical
Publication of JP2000036620A publication Critical patent/JP2000036620A/ja
Publication of JP2000036620A5 publication Critical patent/JP2000036620A5/ja
Pending legal-status Critical Current

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JP14925999A 1998-06-05 1999-05-28 窒化物エピタキシのための多層インジウム含有窒化物緩衝層 Pending JP2000036620A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9272898A 1998-06-05 1998-06-05
US092728 1998-06-05

Publications (2)

Publication Number Publication Date
JP2000036620A JP2000036620A (ja) 2000-02-02
JP2000036620A5 true JP2000036620A5 (enExample) 2006-07-20

Family

ID=22234815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14925999A Pending JP2000036620A (ja) 1998-06-05 1999-05-28 窒化物エピタキシのための多層インジウム含有窒化物緩衝層

Country Status (5)

Country Link
JP (1) JP2000036620A (enExample)
KR (1) KR20000005908A (enExample)
DE (1) DE19905517B4 (enExample)
GB (1) GB2338107A (enExample)
TW (1) TW398084B (enExample)

Families Citing this family (28)

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GB9826517D0 (en) * 1998-12-02 1999-01-27 Arima Optoelectronics Corp Semiconductor devices
JP3636976B2 (ja) * 2000-03-17 2005-04-06 日本電気株式会社 窒化物半導体素子およびその製造方法
US6495894B2 (en) * 2000-05-22 2002-12-17 Ngk Insulators, Ltd. Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate
JP4001262B2 (ja) * 2001-02-27 2007-10-31 日本碍子株式会社 窒化物膜の製造方法
US6635904B2 (en) * 2001-03-29 2003-10-21 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
US6489636B1 (en) 2001-03-29 2002-12-03 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
JP4088111B2 (ja) * 2002-06-28 2008-05-21 日立電線株式会社 多孔質基板とその製造方法、ＧａＮ系半導体積層基板とその製造方法
DE10245631B4 (de) 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
US7898047B2 (en) 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
US7112860B2 (en) * 2003-03-03 2006-09-26 Cree, Inc. Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
JP5159040B2 (ja) 2005-03-31 2013-03-06 株式会社光波 低温成長バッファ層の形成方法および発光素子の製造方法
KR100821220B1 (ko) * 2006-06-29 2008-04-10 서울옵토디바이스주식회사 다층의 버퍼층을 가지는 질화물 반도체 발광 소자 및 그제조방법
US7534638B2 (en) 2006-12-22 2009-05-19 Philips Lumiled Lighting Co., Llc III-nitride light emitting devices grown on templates to reduce strain
US7547908B2 (en) 2006-12-22 2009-06-16 Philips Lumilieds Lighting Co, Llc III-nitride light emitting devices grown on templates to reduce strain
US7951693B2 (en) * 2006-12-22 2011-05-31 Philips Lumileds Lighting Company, Llc III-nitride light emitting devices grown on templates to reduce strain
TWI398016B (zh) * 2007-02-07 2013-06-01 Advanced Optoelectronic Tech 具三族氮化合物半導體緩衝層之光電半導體元件及其製造方法
JP2009026956A (ja) * 2007-07-19 2009-02-05 Sumitomo Electric Ind Ltd 発光素子、発光素子のための基板生産物、および発光素子を作製する方法
DE102008019268A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US8183577B2 (en) 2009-06-30 2012-05-22 Koninklijke Philips Electronics N.V. Controlling pit formation in a III-nitride device
KR101117484B1 (ko) * 2009-12-31 2012-02-29 우리엘에스티 주식회사 반도체 발광소자
JP5731785B2 (ja) * 2010-09-30 2015-06-10 スタンレー電気株式会社 積層半導体および積層半導体の製造方法
CN103700743A (zh) * 2012-09-28 2014-04-02 江苏汉莱科技有限公司 一种发光二极管及其缓冲层的制备方法
DE102012109460B4 (de) 2012-10-04 2024-03-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Leuchtdioden-Displays und Leuchtdioden-Display
US9159788B2 (en) 2013-12-31 2015-10-13 Industrial Technology Research Institute Nitride semiconductor structure
CN105428482B (zh) * 2015-12-30 2018-09-11 厦门市三安光电科技有限公司 一种led外延结构及制作方法
DE102016120335A1 (de) * 2016-10-25 2018-04-26 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge und Verfahren zur Herstellung einer Halbleiterschichtenfolge
DE102017101333B4 (de) 2017-01-24 2023-07-27 X-Fab Semiconductor Foundries Gmbh Halbleiter und verfahren zur herstellung eines halbleiters
TWI671801B (zh) * 2018-08-01 2019-09-11 環球晶圓股份有限公司 磊晶結構

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JP3352712B2 (ja) * 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
JPH06164055A (ja) * 1992-11-25 1994-06-10 Asahi Chem Ind Co Ltd 量子井戸型半導体レーザ
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US5656832A (en) * 1994-03-09 1997-08-12 Kabushiki Kaisha Toshiba Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
JPH08116091A (ja) * 1994-08-26 1996-05-07 Rohm Co Ltd 半導体発光素子およびその製法
JPH0897469A (ja) * 1994-09-29 1996-04-12 Rohm Co Ltd 半導体発光素子
JPH08125223A (ja) * 1994-10-25 1996-05-17 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子及びその製造方法
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
JPH08264833A (ja) * 1995-03-10 1996-10-11 Hewlett Packard Co <Hp> 発光ダイオード
JPH08288552A (ja) * 1995-04-19 1996-11-01 Nippon Telegr & Teleph Corp <Ntt> 半導体発光素子及びその製造方法
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
JP2839077B2 (ja) * 1995-06-15 1998-12-16 日本電気株式会社 窒化ガリウム系化合物半導体発光素子
US5798537A (en) * 1995-08-31 1998-08-25 Kabushiki Kaisha Toshiba Blue light-emitting device
US5789265A (en) * 1995-08-31 1998-08-04 Kabushiki Kaisha Toshiba Method of manufacturing blue light-emitting device by using BCL3 and CL2
JP3712770B2 (ja) * 1996-01-19 2005-11-02 豊田合成株式会社 ３族窒化物半導体の製造方法及び半導体素子
JP3879173B2 (ja) * 1996-03-25 2007-02-07 住友電気工業株式会社 化合物半導体気相成長方法
US5729029A (en) * 1996-09-06 1998-03-17 Hewlett-Packard Company Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices
JPH10107316A (ja) * 1996-10-01 1998-04-24 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
JPH10214999A (ja) * 1997-01-30 1998-08-11 Toyota Central Res & Dev Lab Inc Ｉｉｉ−ｖ族窒化物半導体素子
JPH10294531A (ja) * 1997-02-21 1998-11-04 Toshiba Corp 窒化物化合物半導体発光素子
JP3653950B2 (ja) * 1997-05-21 2005-06-02 松下電器産業株式会社 窒化ガリウム系化合物半導体発光素子および窒化ガリウム系化合物半導体薄膜の製造方法
JP3991393B2 (ja) * 1997-06-11 2007-10-17 住友電気工業株式会社 化合物半導体の製造装置
JP3147821B2 (ja) * 1997-06-13 2001-03-19 日本電気株式会社 窒化物系化合物半導体およびその結晶成長方法および窒化ガリウム系発光素子
JPH11121800A (ja) * 1997-10-09 1999-04-30 Fuji Electric Co Ltd Ｉｉｉ 族窒化物半導体素子およびその製造方法
JP3500281B2 (ja) * 1997-11-05 2004-02-23 株式会社東芝 窒化ガリウム系半導体素子およびその製造方法
JP3080155B2 (ja) * 1997-11-05 2000-08-21 サンケン電気株式会社 窒化ガリウム半導体層を有する半導体装置及びその製造方法
JPH11186602A (ja) * 1997-12-24 1999-07-09 Toshiba Corp 発光素子および結晶成長方法
JPH11219904A (ja) * 1998-01-30 1999-08-10 Stanley Electric Co Ltd 化合物半導体基板、その製造方法および化合物半導体発光素子

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