JP2000036620A5 - - Google Patents
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- JP2000036620A5 JP2000036620A5 JP1999149259A JP14925999A JP2000036620A5 JP 2000036620 A5 JP2000036620 A5 JP 2000036620A5 JP 1999149259 A JP1999149259 A JP 1999149259A JP 14925999 A JP14925999 A JP 14925999A JP 2000036620 A5 JP2000036620 A5 JP 2000036620A5
- Authority
- JP
- Japan
- Prior art keywords
- buffer layer
- substructure
- semiconductor device
- indium
- buffer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 description 16
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 13
- 229910052738 indium Inorganic materials 0.000 description 13
- -1 nitride compound Chemical class 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 2
Description
【特許請求の範囲】
【請求項１】
半導体デバイスであって、
基板(2)と、
該基板(2)上に配設された緩衝構造(4)であって、前記基板(2)上に直接配設された第１の緩衝層(16)を備えており、該第１の緩衝層(16)が、第１のインジウム含有窒化化合物から形成されている、緩衝構造(4)と、
該緩衝構造(4)上に配設された活性構造(6)と
を備えている半導体デバイス。
【請求項２】
前記第１の緩衝層(16)が、AlxInyGa1-x-yN(0＜y≦1,0≦x≦1)から構成される組から選択された第１のインジウム含有窒化化合物から形成されている請求項１に記載の半導体デバイス。
【請求項３】
前記緩衝構造が、前記第１の緩衝層(18)上に配設された第２の緩衝層(20)を更に備えており、該第２の緩衝層(20)が、第２のインジウム含有窒化化合物から形成されている請求項１に記載の半導体デバイス。
【請求項４】
前記緩衝構造が、キャップ層(26)を更に備えており、前記第２の層(26)が、前記第１の緩衝層(24)上に配設された第２のインジウム含有窒化化合物から形成されている請求項１に記載の半導体デバイス。
【請求項５】
前記キャップ層(26)が、窒化ガリウムから形成されている請求項４に記載の半導体デバイス。
【請求項６】
前記緩衝構造が、第１の緩衝層下部構造(34)を更に備えている請求項１に記載の半導体デバイス。
【請求項７】
前記第１の緩衝層下部構造(34)が、インジウム含有窒化化合物から形成された下部構造緩衝層(38)を備えており、
前記第１の緩衝層が、前記第１の緩衝層下部構造(34)の下部構造緩衝層内に含まれている請求項６に記載の半導体デバイス。
【請求項８】
前記第１の緩衝層下部構造(34)が、
インジウム含有窒化化合物から形成された下部構造緩衝層(38)と、
該下部構造緩衝層(38)の上に配設された下部構造キャップ層(42)と
を備えている請求項６に記載の半導体デバイス。
【請求項９】
前記下部構造キャップ層(42)が、窒化ガリウムから形成されている請求項８に記載の半導体デバイス。
【請求項１０】
前記第１の緩衝層下部構造(64)が、
第１のインジウム含有窒化化合物から形成された第１の下部構造緩衝層(70)と、
該第１の下部構造緩衝層(70)上に配設された第２のインジウム含有窒化化合物から形成された第２の下部構造緩衝層(74)と
を備えている請求項６に記載の半導体デバイス。
【請求項１１】
前記緩衝構造が、前記第１の緩衝層下部構造(34)上に配設された第２の緩衝層下部構造(36)を更に備えている請求項６に記載の半導体デバイス。
【請求項１２】
前記第１及び第２の緩衝層下部構造の各々が、
インジウム含有窒化化合物から形成された下部構造緩衝層(38,40)と、
該下部構造緩衝層(38,40)上に配設された下部構造キャップ層(42,44)と
を備えている請求項１１に記載の半導体デバイス。
【請求項１３】
前記第１及び第２の緩衝層下部構造(34,36)の各々における下部構造キャップ層(42,44)が、窒化ガリウムから形成されている請求項１１に記載の半導体デバイス。
【請求項１４】
前記第１の緩衝層下部構造(64)が、第１のインジウム含有窒化化合物から形成された下部構造緩衝層(70)を備えており、
前記第２の緩衝層下部構造(66)が、第２のインジウム含有窒化化合物から形成された下部構造緩衝層(72)を備えていることを特徴とする請求項１１に記載の半導体デバイス。
【請求項１５】
前記第１及び第２の緩衝層下部構造(64,66)の各々が、
第１のインジウム含有窒化化合物から形成された第１の下部構造緩衝層(74,76)と、
該第１の下部構造緩衝層(74,76)上に配設された、第２のインジウム含有窒化化合物から形成された第２の下部構造緩衝層と
を備えている請求項１１に記載の半導体デバイス。
[Claims]
[Claim 1]
It ’s a semiconductor device,
Board (2) and
A buffer structure (4) disposed on the substrate (2), comprising a first buffer layer (16) disposed directly on the substrate (2), the first buffer. The buffer structure (4), in which the layer (16) is formed from the first indium-containing nitride compound,
A semiconductor device having an active structure (6) disposed on the buffer structure (4).
2.
From the first indium-containing nitride compound selected from the set in which the first buffer layer (16) is composed of Al x In y Ga 1-xy N (0 <y ≤ 1, 0 ≤ x ≤ 1). The semiconductor device according to claim 1, which is formed.
3.
The buffer structure further comprises a second buffer layer (20) disposed on the first buffer layer (18), wherein the second buffer layer (20) contains a second indium. The semiconductor device according to claim 1, which is formed of a nitride compound.
4.
The buffer structure further comprises a cap layer (26), wherein the second layer (26) is formed from a second indium-containing nitride compound disposed on the first buffer layer (24). The semiconductor device according to claim 1.
5.
The semiconductor device according to claim 4, wherein the cap layer (26) is formed of gallium nitride.
6.
The semiconductor device according to claim 1, wherein the buffer structure further includes a first buffer layer lower structure (34).
7.
The first buffer layer substructure (34) includes a substructure buffer layer (38) formed from an indium-containing nitride compound.
The semiconductor device according to claim 6, wherein the first buffer layer is contained in the substructure buffer layer of the first buffer layer substructure (34).
8.
The first buffer layer substructure (34)
A substructure buffer layer (38) formed from an indium-containing nitride compound, and
The semiconductor device according to claim 6, further comprising a substructure cap layer (42) disposed on the substructure buffer layer (38).
9.
The semiconductor device according to claim 8, wherein the substructure cap layer (42) is formed of gallium nitride.
10.
The first buffer layer substructure (64)
With the first substructure buffer layer (70) formed from the first indium-containing nitride compound,
The semiconductor according to claim 6, further comprising a second substructure buffer layer (74) formed from a second indium-containing nitride compound disposed on the first substructure buffer layer (70). device.
11.
The semiconductor device according to claim 6, wherein the buffer structure further includes a second buffer layer lower structure (36) disposed on the first buffer layer lower structure (34).
12.
Each of the first and second buffer layer substructures
Substructure buffer layer (38,40) formed from indium-containing nitride compound,
The semiconductor device according to claim 11, further comprising a substructure cap layer (42,44) disposed on the substructure buffer layer (38,40).
13.
The semiconductor device according to claim 11, wherein the substructure cap layer (42,44) in each of the first and second buffer layer substructures (34,36) is formed of gallium nitride.
14.
The first buffer layer substructure (64) includes a substructure buffer layer (70) formed from a first indium-containing nitride compound.
The semiconductor device according to claim 11, wherein the second buffer layer substructure (66) includes a substructure buffer layer (72) formed of a second indium-containing nitride compound.
15.
Each of the first and second buffer layer substructures (64,66)
A first substructure buffer layer (74,76) formed from a first indium-containing nitride compound, and
The semiconductor according to claim 11, further comprising a second substructure buffer layer formed from a second indium-containing nitride compound disposed on the first substructure buffer layer (74,76). device.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9272898A | 1998-06-05 | 1998-06-05 | |
| US092728 | 1998-06-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000036620A JP2000036620A (en) | 2000-02-02 |
| JP2000036620A5 true JP2000036620A5 (en) | 2006-07-20 |
Family
ID=22234815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14925999A Pending JP2000036620A (en) | 1998-06-05 | 1999-05-28 | Multi-layer indium-contained nitride buffer layer for nitride epitaxy |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2000036620A (en) |
| KR (1) | KR20000005908A (en) |
| DE (1) | DE19905517B4 (en) |
| GB (1) | GB2338107A (en) |
| TW (1) | TW398084B (en) |
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| GB9826517D0 (en) * | 1998-12-02 | 1999-01-27 | Arima Optoelectronics Corp | Semiconductor devices |
| JP3636976B2 (en) * | 2000-03-17 | 2005-04-06 | 日本電気株式会社 | Nitride semiconductor device and manufacturing method thereof |
| US6495894B2 (en) * | 2000-05-22 | 2002-12-17 | Ngk Insulators, Ltd. | Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate |
| JP4001262B2 (en) * | 2001-02-27 | 2007-10-31 | 日本碍子株式会社 | Method for manufacturing nitride film |
| US6489636B1 (en) | 2001-03-29 | 2002-12-03 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
| US6635904B2 (en) * | 2001-03-29 | 2003-10-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
| JP4088111B2 (en) * | 2002-06-28 | 2008-05-21 | 日立電線株式会社 | Porous substrate and manufacturing method thereof, GaN-based semiconductor multilayer substrate and manufacturing method thereof |
| DE10245631B4 (en) | 2002-09-30 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | semiconductor device |
| US7112860B2 (en) | 2003-03-03 | 2006-09-26 | Cree, Inc. | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices |
| US7898047B2 (en) | 2003-03-03 | 2011-03-01 | Samsung Electronics Co., Ltd. | Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices |
| JP5159040B2 (en) | 2005-03-31 | 2013-03-06 | 株式会社光波 | Method for forming low temperature growth buffer layer and method for manufacturing light emitting device |
| KR100821220B1 (en) * | 2006-06-29 | 2008-04-10 | 서울옵토디바이스주식회사 | Light emitting device of a nitride compound semiconductor having multi buffer layers and the fabrication method thereof |
| US7951693B2 (en) | 2006-12-22 | 2011-05-31 | Philips Lumileds Lighting Company, Llc | III-nitride light emitting devices grown on templates to reduce strain |
| US7534638B2 (en) | 2006-12-22 | 2009-05-19 | Philips Lumiled Lighting Co., Llc | III-nitride light emitting devices grown on templates to reduce strain |
| US7547908B2 (en) | 2006-12-22 | 2009-06-16 | Philips Lumilieds Lighting Co, Llc | III-nitride light emitting devices grown on templates to reduce strain |
| TWI398016B (en) * | 2007-02-07 | 2013-06-01 | Advanced Optoelectronic Tech | Photoelectric semiconductor device having buffer layer of iii-nitride based semiconductor and manufacturing method thereof |
| JP2009026956A (en) * | 2007-07-19 | 2009-02-05 | Sumitomo Electric Ind Ltd | Light emitting device, substrate product for light emitting device, and method of fabricating light emitting device |
| DE102008019268A1 (en) | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing an optoelectronic component |
| US8183577B2 (en) | 2009-06-30 | 2012-05-22 | Koninklijke Philips Electronics N.V. | Controlling pit formation in a III-nitride device |
| KR101117484B1 (en) * | 2009-12-31 | 2012-02-29 | 우리엘에스티 주식회사 | Semiconductor light emitting device |
| JP5731785B2 (en) * | 2010-09-30 | 2015-06-10 | スタンレー電気株式会社 | Multilayer semiconductor and method of manufacturing multilayer semiconductor |
| CN103700743A (en) * | 2012-09-28 | 2014-04-02 | 江苏汉莱科技有限公司 | Light-emitting diode and preparation method of buffer layer thereof |
| DE102012109460B4 (en) | 2012-10-04 | 2024-03-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Method for producing a light-emitting diode display and light-emitting diode display |
| US9159788B2 (en) | 2013-12-31 | 2015-10-13 | Industrial Technology Research Institute | Nitride semiconductor structure |
| CN105428482B (en) * | 2015-12-30 | 2018-09-11 | 厦门市三安光电科技有限公司 | A kind of LED epitaxial structure and production method |
| DE102016120335A1 (en) | 2016-10-25 | 2018-04-26 | Osram Opto Semiconductors Gmbh | Semiconductor layer sequence and method for producing a semiconductor layer sequence |
| DE102017101333B4 (en) | 2017-01-24 | 2023-07-27 | X-Fab Semiconductor Foundries Gmbh | SEMICONDUCTORS AND METHOD OF MAKING A SEMICONDUCTOR |
| TWI671801B (en) * | 2018-08-01 | 2019-09-11 | 環球晶圓股份有限公司 | Epitaxy structure |
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| JP3352712B2 (en) * | 1991-12-18 | 2002-12-03 | 浩 天野 | Gallium nitride based semiconductor device and method of manufacturing the same |
| JPH06164055A (en) * | 1992-11-25 | 1994-06-10 | Asahi Chem Ind Co Ltd | Quantum-well semiconductor laser |
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| JPH08116091A (en) * | 1994-08-26 | 1996-05-07 | Rohm Co Ltd | Semiconductor light emitting element |
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| JPH08125223A (en) * | 1994-10-25 | 1996-05-17 | Toyoda Gosei Co Ltd | Group iii nitride semiconductor light-emitting element and its manufacture |
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| JPH08264833A (en) * | 1995-03-10 | 1996-10-11 | Hewlett Packard Co <Hp> | Light emitting diode |
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| JPH10294531A (en) * | 1997-02-21 | 1998-11-04 | Toshiba Corp | Nitride compound semiconductor light emitting element |
| JP3653950B2 (en) * | 1997-05-21 | 2005-06-02 | 松下電器産業株式会社 | Gallium nitride compound semiconductor light emitting device and method for producing gallium nitride compound semiconductor thin film |
| JP3991393B2 (en) * | 1997-06-11 | 2007-10-17 | 住友電気工業株式会社 | Compound semiconductor manufacturing equipment |
| JP3147821B2 (en) * | 1997-06-13 | 2001-03-19 | 日本電気株式会社 | Nitride compound semiconductor, crystal growth method thereof, and gallium nitride light emitting device |
| JPH11121800A (en) * | 1997-10-09 | 1999-04-30 | Fuji Electric Co Ltd | Iii nitride semiconductor device and manufacture thereof |
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| JPH11219904A (en) * | 1998-01-30 | 1999-08-10 | Stanley Electric Co Ltd | Compound semiconductor substrate and manufacture of the same, and compound semiconductor light-emitting element |
-
1998
- 1998-12-31 TW TW87122019A patent/TW398084B/en not_active IP Right Cessation
-
1999
- 1999-02-10 DE DE19905517A patent/DE19905517B4/en not_active Expired - Lifetime
- 1999-05-17 GB GB9911467A patent/GB2338107A/en not_active Withdrawn
- 1999-05-28 JP JP14925999A patent/JP2000036620A/en active Pending
- 1999-06-04 KR KR1019990020594A patent/KR20000005908A/en not_active Application Discontinuation
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