IT8322984A0 - Memoria non volatile in cui puo'essere attuata scrittura e cancellatura con basse tensioni. - Google Patents

Memoria non volatile in cui puo'essere attuata scrittura e cancellatura con basse tensioni.

Info

Publication number
IT8322984A0
IT8322984A0 IT8322984A IT2298483A IT8322984A0 IT 8322984 A0 IT8322984 A0 IT 8322984A0 IT 8322984 A IT8322984 A IT 8322984A IT 2298483 A IT2298483 A IT 2298483A IT 8322984 A0 IT8322984 A0 IT 8322984A0
Authority
IT
Italy
Prior art keywords
erasing
writing
carried out
volatile memory
low voltages
Prior art date
Application number
IT8322984A
Other languages
English (en)
Other versions
IT8322984A1 (it
IT1168295B (it
Inventor
Nobuyuki Sato
Kyotake Uchiumi
Shinji Nabetani
Ken Uchida
Original Assignee
Hitachi Ltd
Hitachi Microcumputer Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcumputer Eng filed Critical Hitachi Ltd
Publication of IT8322984A0 publication Critical patent/IT8322984A0/it
Publication of IT8322984A1 publication Critical patent/IT8322984A1/it
Application granted granted Critical
Publication of IT1168295B publication Critical patent/IT1168295B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
IT22984/83A 1982-09-24 1983-09-23 Memoria non volatile in cui puo' essere attuata scrittura e cancellatura con basse tensioni IT1168295B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57164910A JPS5955071A (ja) 1982-09-24 1982-09-24 不揮発性半導体装置

Publications (3)

Publication Number Publication Date
IT8322984A0 true IT8322984A0 (it) 1983-09-23
IT8322984A1 IT8322984A1 (it) 1985-03-23
IT1168295B IT1168295B (it) 1987-05-20

Family

ID=15802178

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22984/83A IT1168295B (it) 1982-09-24 1983-09-23 Memoria non volatile in cui puo' essere attuata scrittura e cancellatura con basse tensioni

Country Status (9)

Country Link
US (1) US4630086A (it)
JP (1) JPS5955071A (it)
DE (1) DE3334557A1 (it)
FR (1) FR2533740A1 (it)
GB (1) GB2129611B (it)
HK (1) HK1688A (it)
IT (1) IT1168295B (it)
MY (1) MY8700796A (it)
SG (1) SG87387G (it)

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Also Published As

Publication number Publication date
HK1688A (en) 1988-01-15
IT8322984A1 (it) 1985-03-23
FR2533740A1 (fr) 1984-03-30
MY8700796A (en) 1987-12-31
JPS5955071A (ja) 1984-03-29
GB8322568D0 (en) 1983-09-21
IT1168295B (it) 1987-05-20
US4630086A (en) 1986-12-16
GB2129611B (en) 1986-07-16
GB2129611A (en) 1984-05-16
DE3334557A1 (de) 1984-04-05
SG87387G (en) 1988-05-20

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