HK1688A - A nonvolatile memory - Google Patents

A nonvolatile memory

Info

Publication number
HK1688A
HK1688A HK16/88A HK1688A HK1688A HK 1688 A HK1688 A HK 1688A HK 16/88 A HK16/88 A HK 16/88A HK 1688 A HK1688 A HK 1688A HK 1688 A HK1688 A HK 1688A
Authority
HK
Hong Kong
Prior art keywords
nonvolatile memory
nonvolatile
memory
Prior art date
Application number
HK16/88A
Other languages
English (en)
Inventor
Nobuyuki Sato
Kyotake Uchiumi
Shinji Nabetani
Ken Uchida
Original Assignee
Hitachi Ltd
Hitachi Microcumputer Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcumputer Eng filed Critical Hitachi Ltd
Publication of HK1688A publication Critical patent/HK1688A/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • H01L29/7883Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
HK16/88A 1982-09-24 1988-01-07 A nonvolatile memory HK1688A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57164910A JPS5955071A (ja) 1982-09-24 1982-09-24 不揮発性半導体装置

Publications (1)

Publication Number Publication Date
HK1688A true HK1688A (en) 1988-01-15

Family

ID=15802178

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16/88A HK1688A (en) 1982-09-24 1988-01-07 A nonvolatile memory

Country Status (9)

Country Link
US (1) US4630086A (xx)
JP (1) JPS5955071A (xx)
DE (1) DE3334557A1 (xx)
FR (1) FR2533740A1 (xx)
GB (1) GB2129611B (xx)
HK (1) HK1688A (xx)
IT (1) IT1168295B (xx)
MY (1) MY8700796A (xx)
SG (1) SG87387G (xx)

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Also Published As

Publication number Publication date
JPS5955071A (ja) 1984-03-29
MY8700796A (en) 1987-12-31
SG87387G (en) 1988-05-20
GB2129611A (en) 1984-05-16
DE3334557A1 (de) 1984-04-05
IT1168295B (it) 1987-05-20
GB2129611B (en) 1986-07-16
US4630086A (en) 1986-12-16
IT8322984A0 (it) 1983-09-23
FR2533740A1 (fr) 1984-03-30
IT8322984A1 (it) 1985-03-23
GB8322568D0 (en) 1983-09-21

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NR Patent deemed never to have been added to the register under section 13(7) of patents (transitional arrangements) rules