GB2092824B - A non-volatile semiconductor memory device - Google Patents

A non-volatile semiconductor memory device

Info

Publication number
GB2092824B
GB2092824B GB8135384A GB8135384A GB2092824B GB 2092824 B GB2092824 B GB 2092824B GB 8135384 A GB8135384 A GB 8135384A GB 8135384 A GB8135384 A GB 8135384A GB 2092824 B GB2092824 B GB 2092824B
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
volatile
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8135384A
Other versions
GB2092824A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suwa Seikosha KK
Original Assignee
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP17559480A external-priority patent/JPS5799782A/en
Priority claimed from JP14902981A external-priority patent/JPS5850779A/en
Application filed by Suwa Seikosha KK filed Critical Suwa Seikosha KK
Publication of GB2092824A publication Critical patent/GB2092824A/en
Application granted granted Critical
Publication of GB2092824B publication Critical patent/GB2092824B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Non-Volatile Memory (AREA)
GB8135384A 1980-12-12 1981-11-24 A non-volatile semiconductor memory device Expired GB2092824B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17559480A JPS5799782A (en) 1980-12-12 1980-12-12 Semiconductor memory device
JP14902981A JPS5850779A (en) 1981-09-21 1981-09-21 Semiconductor memory device

Publications (2)

Publication Number Publication Date
GB2092824A GB2092824A (en) 1982-08-18
GB2092824B true GB2092824B (en) 1984-08-15

Family

ID=26479038

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8135384A Expired GB2092824B (en) 1980-12-12 1981-11-24 A non-volatile semiconductor memory device

Country Status (3)

Country Link
DE (1) DE3148807C2 (en)
GB (1) GB2092824B (en)
HK (1) HK73886A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2620847A1 (en) * 1987-09-18 1989-03-24 Thomson Semiconducteurs METHOD FOR SELF-ALIGNMENT OF FLOATING GRIDS OF FLOATING GRID TRANSISTORS OF A NON-VOLATILE MEMORY AND MEMORY OBTAINED ACCORDING TO THIS METHOD

Also Published As

Publication number Publication date
DE3148807A1 (en) 1982-08-12
DE3148807C2 (en) 1983-11-03
HK73886A (en) 1986-10-10
GB2092824A (en) 1982-08-18

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20011123