DE3280078D1 - Bitleitungsbetriebene translineare speicherzelle. - Google Patents

Bitleitungsbetriebene translineare speicherzelle.

Info

Publication number
DE3280078D1
DE3280078D1 DE8282401973T DE3280078T DE3280078D1 DE 3280078 D1 DE3280078 D1 DE 3280078D1 DE 8282401973 T DE8282401973 T DE 8282401973T DE 3280078 T DE3280078 T DE 3280078T DE 3280078 D1 DE3280078 D1 DE 3280078D1
Authority
DE
Germany
Prior art keywords
biteline
translinear
operated
storage cell
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8282401973T
Other languages
English (en)
Inventor
William H Herndon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Application granted granted Critical
Publication of DE3280078D1 publication Critical patent/DE3280078D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
DE8282401973T 1981-10-27 1982-10-26 Bitleitungsbetriebene translineare speicherzelle. Expired - Fee Related DE3280078D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/315,679 US4442509A (en) 1981-10-27 1981-10-27 Bit line powered translinear memory cell

Publications (1)

Publication Number Publication Date
DE3280078D1 true DE3280078D1 (de) 1990-02-08

Family

ID=23225568

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282401973T Expired - Fee Related DE3280078D1 (de) 1981-10-27 1982-10-26 Bitleitungsbetriebene translineare speicherzelle.

Country Status (5)

Country Link
US (1) US4442509A (de)
EP (1) EP0078223B1 (de)
JP (1) JPS5883389A (de)
CA (1) CA1189622A (de)
DE (1) DE3280078D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2511822A1 (fr) * 1981-08-21 1983-02-25 Thomson Csf Circuit logique bistable utilisant des transistors a effet de champ a faible tension de seuil et dispositif de memorisation comportant un tel circuit
JPS6052518B2 (ja) * 1981-12-18 1985-11-19 富士通株式会社 半導体記憶装置
US4601016A (en) * 1983-06-24 1986-07-15 Honeywell Inc. Semiconductor memory cell
JPS6052998A (ja) * 1983-09-02 1985-03-26 Hitachi Ltd メモリセル
US4821235A (en) * 1986-04-17 1989-04-11 Fairchild Semiconductor Corporation Translinear static memory cell with bipolar and MOS devices
US4796227A (en) * 1987-03-17 1989-01-03 Schlumberger Systems And Services, Inc. Computer memory system
JPH0766671B2 (ja) * 1992-12-09 1995-07-19 宮城工業高等専門学校長 多値置数電子装置
US5572460A (en) * 1993-10-26 1996-11-05 Integrated Device Technology, Inc. Static random-access memory cell with capacitive coupling to reduce sensitivity to radiation
US5793668A (en) * 1997-06-06 1998-08-11 Timeplex, Inc. Method and apparatus for using parasitic capacitances of a printed circuit board as a temporary data storage medium working with a remote device
US6958946B2 (en) * 2002-10-02 2005-10-25 Hewlett-Packard Development Company, L.P. Memory storage device which regulates sense voltages

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573499A (en) * 1969-05-02 1971-04-06 Bell Telephone Labor Inc Bipolar memory using stored charge
GB1355588A (en) * 1972-03-17 1974-06-05 Plessey Co Ltd Electrical integrated circuit storage array
DE2457921C2 (de) * 1974-12-07 1976-12-09 Ibm Deutschland Verfahren und schaltungsanordnung zur erhoehung der schreibgeschwindigkeit in integrierten datenspeichern
US4091461A (en) * 1976-02-09 1978-05-23 Rockwell International Corporation High-speed memory cell with dual purpose data bus

Also Published As

Publication number Publication date
EP0078223B1 (de) 1990-01-03
EP0078223A2 (de) 1983-05-04
CA1189622A (en) 1985-06-25
EP0078223A3 (en) 1985-07-31
JPS5883389A (ja) 1983-05-19
US4442509A (en) 1984-04-10
JPH0221080B2 (de) 1990-05-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee