IN2012DN00856A - - Google Patents

Info

Publication number
IN2012DN00856A
IN2012DN00856A IN856DEN2012A IN2012DN00856A IN 2012DN00856 A IN2012DN00856 A IN 2012DN00856A IN 856DEN2012 A IN856DEN2012 A IN 856DEN2012A IN 2012DN00856 A IN2012DN00856 A IN 2012DN00856A
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Vijayen S Veerasamy
Original Assignee
Guardian Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guardian Industries filed Critical Guardian Industries
Publication of IN2012DN00856A publication Critical patent/IN2012DN00856A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/188—Preparation by epitaxial growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Drying Of Semiconductors (AREA)
  • Catalysts (AREA)
IN856DEN2012 2009-08-07 2012-01-31 IN2012DN00856A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/461,346 US10167572B2 (en) 2009-08-07 2009-08-07 Large area deposition of graphene via hetero-epitaxial growth, and products including the same
PCT/US2010/001982 WO2011016828A2 (en) 2009-08-07 2010-07-15 Large area deposition of graphene hetero-epitaxial growth, and products including the same

Publications (1)

Publication Number Publication Date
IN2012DN00856A true IN2012DN00856A (de) 2015-07-10

Family

ID=42797336

Family Applications (1)

Application Number Title Priority Date Filing Date
IN856DEN2012 IN2012DN00856A (de) 2009-08-07 2012-01-31

Country Status (12)

Country Link
US (1) US10167572B2 (de)
EP (2) EP2462262A2 (de)
JP (1) JP5731502B2 (de)
KR (1) KR101724772B1 (de)
CN (2) CN109023514A (de)
BR (1) BR112012008091A2 (de)
IN (1) IN2012DN00856A (de)
MX (1) MX338878B (de)
RU (1) RU2012108641A (de)
SA (1) SA110310637B1 (de)
TW (1) TW201114683A (de)
WO (1) WO2011016828A2 (de)

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KR101806916B1 (ko) * 2011-03-17 2017-12-12 한화테크윈 주식회사 그래핀 필름 제조 장치 및 그래핀 필름 제조 방법
KR101842018B1 (ko) * 2011-04-01 2018-03-26 한화테크윈 주식회사 그래핀을 포함하는 필름 제조 방법
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JP5562283B2 (ja) * 2011-04-07 2014-07-30 日本写真印刷株式会社 グラフェンを主成分とする透明導電膜を備えた透明導電物とその製造方法
JP5455963B2 (ja) * 2011-04-07 2014-03-26 日本写真印刷株式会社 グラフェンを主成分とする透明導電膜を備えた転写シートとその製造方法
JP5541741B2 (ja) * 2011-04-11 2014-07-09 日本写真印刷株式会社 グラフェンを主成分とする透明導電膜を備えた転写シートとその製造方法
CN102719877B (zh) * 2011-06-09 2014-09-03 中国科学院金属研究所 一种低成本无损转移石墨烯的方法
KR101380835B1 (ko) * 2011-07-22 2014-04-04 성균관대학교산학협력단 그래핀의 원자층 식각 방법
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KR20140092809A (ko) 2011-09-09 2014-07-24 보드 오브 트러스티즈 오브 노선 일리노이스 유니버시티 결정성 그래핀 및 결정성 그래핀 제조 방법
KR101878739B1 (ko) 2011-10-24 2018-07-17 삼성전자주식회사 그래핀 전사부재, 그래핀 전사방법 및 이를 이용한 그래핀 소자 제조방법
JP5851804B2 (ja) * 2011-11-09 2016-02-03 東京エレクトロン株式会社 前処理方法、グラフェンの形成方法及びグラフェン製造装置
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KR101920716B1 (ko) 2012-05-17 2019-02-13 삼성전자주식회사 기체 분리막 및 그 제조방법
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CN102774118B (zh) * 2012-07-31 2015-05-13 无锡格菲电子薄膜科技有限公司 一种以静电保护膜为媒介转移石墨烯薄膜的方法
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JP2013501695A (ja) 2013-01-17
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TW201114683A (en) 2011-05-01
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US20110033688A1 (en) 2011-02-10
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SA110310637B1 (ar) 2014-05-25
KR20120081977A (ko) 2012-07-20
BR112012008091A2 (pt) 2016-03-01
WO2011016828A3 (en) 2011-03-31
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