HK1119652A1 - Medium for etching oxidic transparent conductive layers - Google Patents

Medium for etching oxidic transparent conductive layers

Info

Publication number
HK1119652A1
HK1119652A1 HK08111757.2A HK08111757A HK1119652A1 HK 1119652 A1 HK1119652 A1 HK 1119652A1 HK 08111757 A HK08111757 A HK 08111757A HK 1119652 A1 HK1119652 A1 HK 1119652A1
Authority
HK
Hong Kong
Prior art keywords
medium
transparent conductive
conductive layers
oxidic transparent
etching
Prior art date
Application number
HK08111757.2A
Other languages
English (en)
Chinese (zh)
Inventor
Werner Stockum
Armin Kuebelbeck
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of HK1119652A1 publication Critical patent/HK1119652A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Weting (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Surface Treatment Of Glass (AREA)
HK08111757.2A 2005-07-04 2008-10-24 Medium for etching oxidic transparent conductive layers HK1119652A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005031469A DE102005031469A1 (de) 2005-07-04 2005-07-04 Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten
PCT/EP2006/005460 WO2007003255A1 (de) 2005-07-04 2006-06-08 Medium zur ätzung von oxidischen transparent leitfähigen schichten

Publications (1)

Publication Number Publication Date
HK1119652A1 true HK1119652A1 (en) 2009-03-13

Family

ID=36888644

Family Applications (1)

Application Number Title Priority Date Filing Date
HK08111757.2A HK1119652A1 (en) 2005-07-04 2008-10-24 Medium for etching oxidic transparent conductive layers

Country Status (10)

Country Link
US (1) US20080210660A1 (ja)
EP (1) EP1899277A1 (ja)
JP (1) JP5373394B2 (ja)
KR (1) KR20080025757A (ja)
CN (1) CN101208277B (ja)
DE (1) DE102005031469A1 (ja)
HK (1) HK1119652A1 (ja)
MY (1) MY157618A (ja)
TW (1) TWI391474B (ja)
WO (1) WO2007003255A1 (ja)

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WO2010025262A2 (en) * 2008-08-27 2010-03-04 Applied Materials, Inc. Back contact solar cells using printed dielectric barrier
CN102203952A (zh) * 2008-10-29 2011-09-28 三菱瓦斯化学株式会社 以氧化锌为主要成分的透明导电膜的纹理加工液及具有凹凸的透明导电膜的制造方法
US8518277B2 (en) * 2009-02-12 2013-08-27 Tpk Touch Solutions Inc. Plastic capacitive touch screen and method of manufacturing same
WO2010111197A2 (en) * 2009-03-25 2010-09-30 Intermolecular, Inc. Acid chemistries and methodologies for texturing transparent conductive oxide materials
CN102369258B (zh) 2009-03-30 2014-12-10 东丽株式会社 导电膜去除剂及导电膜去除方法
US8263427B2 (en) * 2009-06-02 2012-09-11 Intermolecular, Inc. Combinatorial screening of transparent conductive oxide materials for solar applications
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US8198125B2 (en) * 2009-12-11 2012-06-12 Du Pont Apollo Limited Method of making monolithic photovoltaic module on flexible substrate
CN102108512B (zh) * 2009-12-25 2013-09-18 比亚迪股份有限公司 一种金属化学蚀刻液及蚀刻方法
TWI549900B (zh) 2010-03-23 2016-09-21 坎畢歐科技公司 奈米結構透明導體之圖案化蝕刻
JP5733304B2 (ja) 2010-04-09 2015-06-10 東亞合成株式会社 導電性高分子エッチング用インク及び導電性高分子のパターニング方法
WO2011157335A1 (en) * 2010-06-14 2011-12-22 Merck Patent Gmbh Cross-linking and multi-phase etch pastes for high resolution feature patterning
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WO2012083082A1 (en) 2010-12-15 2012-06-21 Sun Chemical Corporation Printable etchant compositions for etching silver nanoware-based transparent, conductive film
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CN103688600A (zh) * 2011-07-18 2014-03-26 默克专利股份有限公司 抗静电和抗反射涂层及相应的堆叠层的结构化
CN102569038A (zh) * 2011-12-29 2012-07-11 映瑞光电科技(上海)有限公司 图形化衬底的制作方法
CN104011882A (zh) 2012-01-12 2014-08-27 应用材料公司 制造太阳能电池装置的方法
KR20130084717A (ko) * 2012-01-18 2013-07-26 솔브레인 주식회사 식각 조성물 및 이를 이용한 표시 기판의 제조 방법
WO2013136624A1 (ja) * 2012-03-13 2013-09-19 株式会社Adeka エッチング液組成物及びエッチング方法
WO2015168881A1 (zh) * 2014-05-07 2015-11-12 佛山市中山大学研究院 一种用于氧化物材料体系的新型蚀刻液及其蚀刻方法和应用
CN103980905B (zh) * 2014-05-07 2017-04-05 佛山市中山大学研究院 一种用于氧化物材料体系的蚀刻液及其蚀刻方法和应用
WO2016096083A1 (en) * 2014-12-19 2016-06-23 Merck Patent Gmbh Agent for increasing etching rates
US10372246B2 (en) 2015-07-16 2019-08-06 Hailiang Wang Transferable nanocomposites for touch sensors
US10294422B2 (en) 2015-07-16 2019-05-21 Hailiang Wang Etching compositions for transparent conductive layers comprising silver nanowires
KR101922289B1 (ko) * 2015-11-26 2018-11-27 삼성에스디아이 주식회사 Ｃｍｐ 슬러리 조성물 및 이를 이용한 유기막 연마방법
JP2017216444A (ja) * 2016-05-31 2017-12-07 ナガセケムテックス株式会社 エッチング液
US9824893B1 (en) * 2016-06-28 2017-11-21 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
US12051589B2 (en) 2016-06-28 2024-07-30 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
JP7190814B2 (ja) 2017-02-13 2022-12-16 ラム リサーチ コーポレーション エアギャップの形成方法
US10546748B2 (en) 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
JP7110216B2 (ja) 2017-09-22 2022-08-01 株式会社カネカ パターニングシートおよびエッチング構造物の製造方法
CN107673627B (zh) * 2017-11-01 2020-06-16 南京大学 一种多孔导电玻璃的制备方法
CN111886689A (zh) 2018-03-19 2020-11-03 朗姆研究公司 无倒角通孔集成方案
CN110922971A (zh) * 2018-09-20 2020-03-27 深圳新宙邦科技股份有限公司 一种用于掺铝氧化锌薄膜的蚀刻液组合物
WO2020263757A1 (en) 2019-06-27 2020-12-30 Lam Research Corporation Alternating etch and passivation process
US11964874B2 (en) * 2020-06-09 2024-04-23 Agilent Technologies, Inc. Etched non-porous particles and method of producing thereof
CN112981403A (zh) * 2020-12-29 2021-06-18 苏州运宏电子有限公司 一种金属薄片表面细纹蚀刻工艺
CN113969173B (zh) * 2021-09-23 2022-05-13 易安爱富(武汉)科技有限公司 一种ITO/Ag/ITO复合金属层薄膜的蚀刻液

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Also Published As

Publication number Publication date
TWI391474B (zh) 2013-04-01
WO2007003255A8 (de) 2007-03-22
WO2007003255A1 (de) 2007-01-11
CN101208277B (zh) 2014-09-24
MY157618A (en) 2016-06-30
DE102005031469A1 (de) 2007-01-11
CN101208277A (zh) 2008-06-25
JP5373394B2 (ja) 2013-12-18
US20080210660A1 (en) 2008-09-04
EP1899277A1 (de) 2008-03-19
TW200710206A (en) 2007-03-16
KR20080025757A (ko) 2008-03-21
JP2008547232A (ja) 2008-12-25

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20190610