MY157618A - Medium for etching oxidic, transparent, conductive layers - Google Patents

Medium for etching oxidic, transparent, conductive layers

Info

Publication number
MY157618A
MY157618A MYPI20063097A MYPI20063097A MY157618A MY 157618 A MY157618 A MY 157618A MY PI20063097 A MYPI20063097 A MY PI20063097A MY PI20063097 A MYPI20063097 A MY PI20063097A MY 157618 A MY157618 A MY 157618A
Authority
MY
Malaysia
Prior art keywords
medium
transparent
etching
conductive layers
oxidic
Prior art date
Application number
MYPI20063097A
Inventor
Werner Dipl Ing Stockum
Armin Dipl Ing Kuebelbeck
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of MY157618A publication Critical patent/MY157618A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Weting (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

- 24 - ABSTRJKCT MEDIUM FOR ETCHING OXIDIC, TRANSPARENT, CONDUCTIVE LAYERS THE PRESENT INVENTION RELATES TO A NOVEL DISPENSABLE MEDIUM FOR ETCH- ING DOPED TIN OXIDE LAYERS HAVING NON-NEWTONIAN FLOW BEHAVIOUR FOR THE ETCHING OF SURFACES IN THE PRODUCTION OF DISPLAYS AND/OR SOLAR CELLS AND TO THE USE THEREOF. IN PARTICULAR, IT RELATES TO CORRESPONDING PARTICLE-FREE COMPOSITIONS BY MEANS OF WHICH FINE STRUCTURES CAN BE ETCHED SELEC- TIVELY WITHOUT DAMAGING OR ATTACKING ADJACENT AREAS.
MYPI20063097A 2005-07-04 2006-06-29 Medium for etching oxidic, transparent, conductive layers MY157618A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005031469A DE102005031469A1 (en) 2005-07-04 2005-07-04 Medium for the etching of oxidic, transparent, conductive layers

Publications (1)

Publication Number Publication Date
MY157618A true MY157618A (en) 2016-06-30

Family

ID=36888644

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20063097A MY157618A (en) 2005-07-04 2006-06-29 Medium for etching oxidic, transparent, conductive layers

Country Status (10)

Country Link
US (1) US20080210660A1 (en)
EP (1) EP1899277A1 (en)
JP (1) JP5373394B2 (en)
KR (1) KR20080025757A (en)
CN (1) CN101208277B (en)
DE (1) DE102005031469A1 (en)
HK (1) HK1119652A1 (en)
MY (1) MY157618A (en)
TW (1) TWI391474B (en)
WO (1) WO2007003255A1 (en)

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DE102005035255A1 (en) * 2005-07-25 2007-02-01 Merck Patent Gmbh Etching media for oxide, transparent, conductive layers
DE102006051735A1 (en) * 2006-10-30 2008-05-08 Merck Patent Gmbh Printable medium for the etching of oxidic, transparent, conductive layers
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US20090139568A1 (en) * 2007-11-19 2009-06-04 Applied Materials, Inc. Crystalline Solar Cell Metallization Methods
US8309446B2 (en) 2008-07-16 2012-11-13 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a doping layer mask
WO2010025262A2 (en) * 2008-08-27 2010-03-04 Applied Materials, Inc. Back contact solar cells using printed dielectric barrier
CN102203952A (en) * 2008-10-29 2011-09-28 三菱瓦斯化学株式会社 Texture processing liquid for transparent conductive film mainly composed of zinc oxide and method for producing transparent conductive film having recesses and projections
US8518277B2 (en) * 2009-02-12 2013-08-27 Tpk Touch Solutions Inc. Plastic capacitive touch screen and method of manufacturing same
WO2010111197A2 (en) * 2009-03-25 2010-09-30 Intermolecular, Inc. Acid chemistries and methodologies for texturing transparent conductive oxide materials
CN102369258B (en) 2009-03-30 2014-12-10 东丽株式会社 Agent for removing conductive film and method for removing conductive film
US8263427B2 (en) * 2009-06-02 2012-09-11 Intermolecular, Inc. Combinatorial screening of transparent conductive oxide materials for solar applications
CN101958361A (en) * 2009-07-13 2011-01-26 无锡尚德太阳能电力有限公司 Method for etching transparent thin-film solar cell component
US8198125B2 (en) * 2009-12-11 2012-06-12 Du Pont Apollo Limited Method of making monolithic photovoltaic module on flexible substrate
CN102108512B (en) * 2009-12-25 2013-09-18 比亚迪股份有限公司 Chemical etching liquid for metals and etching method
TWI549900B (en) 2010-03-23 2016-09-21 坎畢歐科技公司 Etch patterning of nanostructure transparent conductors
JP5733304B2 (en) 2010-04-09 2015-06-10 東亞合成株式会社 Conductive polymer etching ink and conductive polymer patterning method
WO2011157335A1 (en) * 2010-06-14 2011-12-22 Merck Patent Gmbh Cross-linking and multi-phase etch pastes for high resolution feature patterning
JP2012043897A (en) * 2010-08-17 2012-03-01 Dnp Fine Chemicals Co Ltd Etchant for conductive film and etching method
WO2012083082A1 (en) 2010-12-15 2012-06-21 Sun Chemical Corporation Printable etchant compositions for etching silver nanoware-based transparent, conductive film
DE102011016881A1 (en) * 2011-04-13 2012-10-18 Forschungszentrum Jülich GmbH Etching solution and method for structuring a zinc oxide layer and zinc oxide layer
CN103650067A (en) 2011-06-24 2014-03-19 株式会社可乐丽 Method for forming conductive film, conductive film, insulation method, and insulation film
CN103688600A (en) * 2011-07-18 2014-03-26 默克专利股份有限公司 Structuring antistatic and antireflection coatings and corresponding stacked layers
CN102569038A (en) * 2011-12-29 2012-07-11 映瑞光电科技(上海)有限公司 Method for manufacturing patterned substrate
CN104011882A (en) 2012-01-12 2014-08-27 应用材料公司 Methods of manufacturing solar cell devices
KR20130084717A (en) * 2012-01-18 2013-07-26 솔브레인 주식회사 Etchant composition and method of manufacturing a display substrate using the etchant composition
WO2013136624A1 (en) * 2012-03-13 2013-09-19 株式会社Adeka Etching solution composition and etching method
WO2015168881A1 (en) * 2014-05-07 2015-11-12 佛山市中山大学研究院 Novel etching solution used in oxide material system, etching method and application thereof
CN103980905B (en) * 2014-05-07 2017-04-05 佛山市中山大学研究院 A kind of etching solution and its engraving method and application for oxide material system
WO2016096083A1 (en) * 2014-12-19 2016-06-23 Merck Patent Gmbh Agent for increasing etching rates
US10372246B2 (en) 2015-07-16 2019-08-06 Hailiang Wang Transferable nanocomposites for touch sensors
US10294422B2 (en) 2015-07-16 2019-05-21 Hailiang Wang Etching compositions for transparent conductive layers comprising silver nanowires
KR101922289B1 (en) * 2015-11-26 2018-11-27 삼성에스디아이 주식회사 Cmp slurry composition and polishing method of organic film using the same
JP2017216444A (en) * 2016-05-31 2017-12-07 ナガセケムテックス株式会社 Etchant
US9824893B1 (en) * 2016-06-28 2017-11-21 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
US12051589B2 (en) 2016-06-28 2024-07-30 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
JP7190814B2 (en) 2017-02-13 2022-12-16 ラム リサーチ コーポレーション Air gap formation method
US10546748B2 (en) 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
JP7110216B2 (en) 2017-09-22 2022-08-01 株式会社カネカ Method for manufacturing patterned sheet and etched structure
CN107673627B (en) * 2017-11-01 2020-06-16 南京大学 Preparation method of porous conductive glass
CN111886689A (en) 2018-03-19 2020-11-03 朗姆研究公司 Non-chamfer through hole integration scheme
CN110922971A (en) * 2018-09-20 2020-03-27 深圳新宙邦科技股份有限公司 Etching solution composition for aluminum-doped zinc oxide film
WO2020263757A1 (en) 2019-06-27 2020-12-30 Lam Research Corporation Alternating etch and passivation process
US11964874B2 (en) * 2020-06-09 2024-04-23 Agilent Technologies, Inc. Etched non-porous particles and method of producing thereof
CN112981403A (en) * 2020-12-29 2021-06-18 苏州运宏电子有限公司 Metal sheet surface fine grain etching process
CN113969173B (en) * 2021-09-23 2022-05-13 易安爱富(武汉)科技有限公司 Etching solution for ITO/Ag/ITO composite metal layer film

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Also Published As

Publication number Publication date
TWI391474B (en) 2013-04-01
WO2007003255A8 (en) 2007-03-22
WO2007003255A1 (en) 2007-01-11
CN101208277B (en) 2014-09-24
HK1119652A1 (en) 2009-03-13
DE102005031469A1 (en) 2007-01-11
CN101208277A (en) 2008-06-25
JP5373394B2 (en) 2013-12-18
US20080210660A1 (en) 2008-09-04
EP1899277A1 (en) 2008-03-19
TW200710206A (en) 2007-03-16
KR20080025757A (en) 2008-03-21
JP2008547232A (en) 2008-12-25

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