HK1119652A1 - 氧化物透明導電層的蝕刻介質 - Google Patents

氧化物透明導電層的蝕刻介質

Info

Publication number
HK1119652A1
HK1119652A1 HK08111757.2A HK08111757A HK1119652A1 HK 1119652 A1 HK1119652 A1 HK 1119652A1 HK 08111757 A HK08111757 A HK 08111757A HK 1119652 A1 HK1119652 A1 HK 1119652A1
Authority
HK
Hong Kong
Prior art keywords
medium
transparent conductive
conductive layers
oxidic transparent
etching
Prior art date
Application number
HK08111757.2A
Other languages
English (en)
Inventor
Werner Stockum
Armin Kuebelbeck
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of HK1119652A1 publication Critical patent/HK1119652A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Surface Treatment Of Glass (AREA)
HK08111757.2A 2005-07-04 2008-10-24 氧化物透明導電層的蝕刻介質 HK1119652A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005031469A DE102005031469A1 (de) 2005-07-04 2005-07-04 Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten
PCT/EP2006/005460 WO2007003255A1 (de) 2005-07-04 2006-06-08 Medium zur ätzung von oxidischen transparent leitfähigen schichten

Publications (1)

Publication Number Publication Date
HK1119652A1 true HK1119652A1 (zh) 2009-03-13

Family

ID=36888644

Family Applications (1)

Application Number Title Priority Date Filing Date
HK08111757.2A HK1119652A1 (zh) 2005-07-04 2008-10-24 氧化物透明導電層的蝕刻介質

Country Status (10)

Country Link
US (1) US20080210660A1 (zh)
EP (1) EP1899277A1 (zh)
JP (1) JP5373394B2 (zh)
KR (1) KR20080025757A (zh)
CN (1) CN101208277B (zh)
DE (1) DE102005031469A1 (zh)
HK (1) HK1119652A1 (zh)
MY (1) MY157618A (zh)
TW (1) TWI391474B (zh)
WO (1) WO2007003255A1 (zh)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005035255A1 (de) * 2005-07-25 2007-02-01 Merck Patent Gmbh Ätzmedien für oxidische, transparente, leitfähige Schichten
DE102006051735A1 (de) * 2006-10-30 2008-05-08 Merck Patent Gmbh Druckfähiges Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten
EA201000138A1 (ru) * 2007-07-04 2010-12-30 Агк Флэт Гласс Юроп Са Изделие из стекла
WO2009067475A1 (en) * 2007-11-19 2009-05-28 Applied Materials, Inc. Crystalline solar cell metallization methods
EP2220687A1 (en) * 2007-11-19 2010-08-25 Applied Materials, Inc. Solar cell contact formation process using a patterned etchant material
TW201013961A (en) * 2008-07-16 2010-04-01 Applied Materials Inc Hybrid heterojunction solar cell fabrication using a metal layer mask
US7951637B2 (en) * 2008-08-27 2011-05-31 Applied Materials, Inc. Back contact solar cells using printed dielectric barrier
WO2010050338A1 (ja) * 2008-10-29 2010-05-06 三菱瓦斯化学株式会社 酸化亜鉛を主成分とする透明導電膜のテクスチャー加工液及び凹凸を有する透明導電膜の製造方法
US8518277B2 (en) * 2009-02-12 2013-08-27 Tpk Touch Solutions Inc. Plastic capacitive touch screen and method of manufacturing same
US8486282B2 (en) * 2009-03-25 2013-07-16 Intermolecular, Inc. Acid chemistries and methodologies for texturing transparent conductive oxide materials
WO2010113744A1 (ja) 2009-03-30 2010-10-07 東レ株式会社 導電膜除去剤および導電膜除去方法
US8263427B2 (en) * 2009-06-02 2012-09-11 Intermolecular, Inc. Combinatorial screening of transparent conductive oxide materials for solar applications
CN101958361A (zh) * 2009-07-13 2011-01-26 无锡尚德太阳能电力有限公司 透光薄膜太阳电池组件刻蚀方法
US8198125B2 (en) * 2009-12-11 2012-06-12 Du Pont Apollo Limited Method of making monolithic photovoltaic module on flexible substrate
CN102108512B (zh) * 2009-12-25 2013-09-18 比亚迪股份有限公司 一种金属化学蚀刻液及蚀刻方法
KR101778738B1 (ko) 2010-03-23 2017-09-14 챔프 그레이트 인터내셔널 코포레이션 나노구조 투광 전도체들의 에칭 패터닝
CN102858915B (zh) 2010-04-09 2014-09-24 鹤见曹达株式会社 导电性高分子蚀刻用墨液及导电性高分子的图案化方法
US20130092657A1 (en) * 2010-06-14 2013-04-18 Nano Terra, Inc. Cross-linking and multi-phase etch pastes for high resolution feature patterning
JP2012043897A (ja) * 2010-08-17 2012-03-01 Dnp Fine Chemicals Co Ltd 導電膜用エッチング液およびエッチング方法
US20140021400A1 (en) 2010-12-15 2014-01-23 Sun Chemical Corporation Printable etchant compositions for etching silver nanoware-based transparent, conductive film
DE102011016881A1 (de) * 2011-04-13 2012-10-18 Forschungszentrum Jülich GmbH Ätzlösung sowie Verfahren zur Strukturierung einer Zinkoxidschicht und Zinkoxidschicht
CN103650067A (zh) 2011-06-24 2014-03-19 株式会社可乐丽 导电膜形成方法、导电膜、绝缘化方法以及绝缘膜
JP2014529365A (ja) * 2011-07-18 2014-11-06 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 帯電防止および反射防止コーティングならびに対応する積み重ね層の構築
CN102569038A (zh) * 2011-12-29 2012-07-11 映瑞光电科技(上海)有限公司 图形化衬底的制作方法
WO2013106225A1 (en) 2012-01-12 2013-07-18 Applied Materials, Inc. Methods of manufacturing solar cell devices
KR20130084717A (ko) * 2012-01-18 2013-07-26 솔브레인 주식회사 식각 조성물 및 이를 이용한 표시 기판의 제조 방법
WO2013136624A1 (ja) * 2012-03-13 2013-09-19 株式会社Adeka エッチング液組成物及びエッチング方法
WO2015168881A1 (zh) * 2014-05-07 2015-11-12 佛山市中山大学研究院 一种用于氧化物材料体系的新型蚀刻液及其蚀刻方法和应用
CN103980905B (zh) * 2014-05-07 2017-04-05 佛山市中山大学研究院 一种用于氧化物材料体系的蚀刻液及其蚀刻方法和应用
WO2016096083A1 (en) * 2014-12-19 2016-06-23 Merck Patent Gmbh Agent for increasing etching rates
US10294422B2 (en) 2015-07-16 2019-05-21 Hailiang Wang Etching compositions for transparent conductive layers comprising silver nanowires
US10372246B2 (en) 2015-07-16 2019-08-06 Hailiang Wang Transferable nanocomposites for touch sensors
KR101922289B1 (ko) * 2015-11-26 2018-11-27 삼성에스디아이 주식회사 Ｃｍｐ 슬러리 조성물 및 이를 이용한 유기막 연마방법
JP2017216444A (ja) * 2016-05-31 2017-12-07 ナガセケムテックス株式会社 エッチング液
US9824893B1 (en) * 2016-06-28 2017-11-21 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
KR20180093798A (ko) 2017-02-13 2018-08-22 램 리써치 코포레이션 에어 갭들을 생성하는 방법
JP7110216B2 (ja) 2017-09-22 2022-08-01 株式会社カネカ パターニングシートおよびエッチング構造物の製造方法
CN107673627B (zh) * 2017-11-01 2020-06-16 南京大学 一种多孔导电玻璃的制备方法
WO2019182872A1 (en) 2018-03-19 2019-09-26 Lam Research Corporation Chamfer-less via integration scheme
CN110922971A (zh) * 2018-09-20 2020-03-27 深圳新宙邦科技股份有限公司 一种用于掺铝氧化锌薄膜的蚀刻液组合物
WO2020263757A1 (en) 2019-06-27 2020-12-30 Lam Research Corporation Alternating etch and passivation process
US11964874B2 (en) * 2020-06-09 2024-04-23 Agilent Technologies, Inc. Etched non-porous particles and method of producing thereof
CN112981403A (zh) * 2020-12-29 2021-06-18 苏州运宏电子有限公司 一种金属薄片表面细纹蚀刻工艺
CN113969173B (zh) * 2021-09-23 2022-05-13 易安爱富(武汉)科技有限公司 一种ITO/Ag/ITO复合金属层薄膜的蚀刻液

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63125683A (ja) * 1986-11-14 1988-05-28 Taiyo Yuden Co Ltd 酸化錫導電膜のエッチング方法
JPH01147078A (ja) * 1987-12-02 1989-06-08 Ricoh Co Ltd 透明電極パターン形成用エッチングインキ組成物及びその使用方法
JPH02135619A (ja) * 1988-11-17 1990-05-24 Asahi Glass Co Ltd ウエットエッチング方法
JPH0342829A (ja) * 1989-07-11 1991-02-25 Citizen Watch Co Ltd 透明導電膜のエッチャント
JPH03239377A (ja) * 1990-02-16 1991-10-24 Canon Inc 太陽電池モジュール
CN1058051A (zh) * 1990-07-10 1992-01-22 虞凌 一步法高速钢雕技术
CN1031747C (zh) * 1993-10-27 1996-05-08 高平 电子移印机专用钢模凹版蚀刻液
US5688366A (en) * 1994-04-28 1997-11-18 Canon Kabushiki Kaisha Etching method, method of producing a semiconductor device, and etchant therefor
JP3173318B2 (ja) * 1994-04-28 2001-06-04 キヤノン株式会社 エッチング方法及び半導体素子の製造方法
US5457057A (en) * 1994-06-28 1995-10-10 United Solar Systems Corporation Photovoltaic module fabrication process
JP3057599B2 (ja) * 1994-07-06 2000-06-26 キヤノン株式会社 洗浄装置及び洗浄方法
JPH10110281A (ja) * 1996-10-03 1998-04-28 Asahi Denka Kogyo Kk 金属酸化物薄膜のエッチング方法
JPH11117080A (ja) * 1997-10-15 1999-04-27 Asahi Denka Kogyo Kk 金属酸化物薄膜のエッチング方法
WO2000011107A1 (en) * 1998-08-18 2000-03-02 Ki Won Lee Ito etching composition
JP2001307567A (ja) * 2000-04-25 2001-11-02 Nippon Sheet Glass Co Ltd 透明導電膜付き基板及びその製造方法
EP1276701B1 (de) * 2000-04-28 2012-12-05 Merck Patent GmbH Ätzpasten für anorganische oberflächen
EP1187225B1 (en) * 2000-09-08 2006-11-15 Kanto Kagaku Kabushiki Kaisha Etching liquid composition
KR100442026B1 (ko) * 2000-12-22 2004-07-30 동우 화인켐 주식회사 인듐 틴 산화막의 식각용액 및 이를 이용한 식각방법
DE10150040A1 (de) * 2001-10-10 2003-04-17 Merck Patent Gmbh Kombinierte Ätz- und Dotiermedien
JP3791597B2 (ja) * 2001-10-19 2006-06-28 三菱瓦斯化学株式会社 透明導電膜用エッチング剤組成物

Also Published As

Publication number Publication date
TW200710206A (en) 2007-03-16
US20080210660A1 (en) 2008-09-04
KR20080025757A (ko) 2008-03-21
JP2008547232A (ja) 2008-12-25
MY157618A (en) 2016-06-30
CN101208277A (zh) 2008-06-25
EP1899277A1 (de) 2008-03-19
DE102005031469A1 (de) 2007-01-11
WO2007003255A1 (de) 2007-01-11
JP5373394B2 (ja) 2013-12-18
WO2007003255A8 (de) 2007-03-22
CN101208277B (zh) 2014-09-24
TWI391474B (zh) 2013-04-01

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20190610