FR2786491B1 - Agent de reticulation pour photoresist, et composition de photoresist comprenant celui-ci - Google Patents

Agent de reticulation pour photoresist, et composition de photoresist comprenant celui-ci

Info

Publication number
FR2786491B1
FR2786491B1 FR9914920A FR9914920A FR2786491B1 FR 2786491 B1 FR2786491 B1 FR 2786491B1 FR 9914920 A FR9914920 A FR 9914920A FR 9914920 A FR9914920 A FR 9914920A FR 2786491 B1 FR2786491 B1 FR 2786491B1
Authority
FR
France
Prior art keywords
photoresist
same
crosslinking agent
composition
photoresist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9914920A
Other languages
English (en)
Other versions
FR2786491A1 (fr
Inventor
Jae Chang Jung
Keun Kyu Kong
Myoung Soo Kim
Hyoung Gi Kim
Hyeong Soo Kim
Ki Ho Baik
Jin Soo Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-1998-0051355A external-priority patent/KR100400296B1/ko
Priority claimed from KR10-1999-0005823A external-priority patent/KR100499869B1/ko
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of FR2786491A1 publication Critical patent/FR2786491A1/fr
Application granted granted Critical
Publication of FR2786491B1 publication Critical patent/FR2786491B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/38—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an acetal or ketal radical
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/30—Compounds having groups
    • C07C43/303—Compounds having groups having acetal carbon atoms bound to acyclic carbon atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
FR9914920A 1998-11-27 1999-11-26 Agent de reticulation pour photoresist, et composition de photoresist comprenant celui-ci Expired - Fee Related FR2786491B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-1998-0051355A KR100400296B1 (ko) 1998-11-27 1998-11-27 신규의포토레지스트가교제및이를이용한포토레지스트조성물
KR10-1999-0005823A KR100499869B1 (ko) 1999-02-22 1999-02-22 신규의 포토레지스트 가교제 및 이를 이용한 포토레지스트 조성물

Publications (2)

Publication Number Publication Date
FR2786491A1 FR2786491A1 (fr) 2000-06-02
FR2786491B1 true FR2786491B1 (fr) 2003-04-18

Family

ID=26634375

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9914920A Expired - Fee Related FR2786491B1 (fr) 1998-11-27 1999-11-26 Agent de reticulation pour photoresist, et composition de photoresist comprenant celui-ci

Country Status (9)

Country Link
US (1) US6368773B1 (fr)
JP (1) JP4127941B2 (fr)
CN (1) CN1163796C (fr)
DE (1) DE19956531A1 (fr)
FR (1) FR2786491B1 (fr)
GB (1) GB2344104B (fr)
IT (1) IT1308659B1 (fr)
NL (1) NL1013685C2 (fr)
TW (1) TW459010B (fr)

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KR100359862B1 (ko) * 1999-12-23 2002-11-09 주식회사 하이닉스반도체 난반사 방지막용 중합체와 그 제조방법
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KR100415091B1 (ko) * 2002-03-26 2004-01-13 주식회사 하이닉스반도체 미세패턴 형성 방법
KR100478982B1 (ko) * 2002-05-02 2005-03-25 금호석유화학 주식회사 신규 산발생제 및 이를 함유한 박막 조성물
JP4393258B2 (ja) * 2003-08-29 2010-01-06 富士フイルム株式会社 画像記録材料及び平版印刷版
KR100680405B1 (ko) * 2003-11-19 2007-02-08 주식회사 하이닉스반도체 Ｅｕｖ용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법
KR100732301B1 (ko) * 2005-06-02 2007-06-25 주식회사 하이닉스반도체 포토레지스트 중합체, 포토레지스트 조성물 및 이를 이용한반도체 소자의 제조 방법
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ITTO991042A0 (it) 1999-11-26
JP4127941B2 (ja) 2008-07-30
FR2786491A1 (fr) 2000-06-02
CN1163796C (zh) 2004-08-25
IT1308659B1 (it) 2002-01-09
TW459010B (en) 2001-10-11
DE19956531A1 (de) 2000-05-31
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ITTO991042A1 (it) 2001-05-26
NL1013685A1 (nl) 2000-05-30

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