FR2582149B1 - Appareil pour la croissance d'un cristal semiconducteur - Google Patents

Appareil pour la croissance d'un cristal semiconducteur

Info

Publication number
FR2582149B1
FR2582149B1 FR858511516A FR8511516A FR2582149B1 FR 2582149 B1 FR2582149 B1 FR 2582149B1 FR 858511516 A FR858511516 A FR 858511516A FR 8511516 A FR8511516 A FR 8511516A FR 2582149 B1 FR2582149 B1 FR 2582149B1
Authority
FR
France
Prior art keywords
growing
semiconductor crystal
crystal
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR858511516A
Other languages
English (en)
French (fr)
Other versions
FR2582149A1 (fr
Inventor
Junichi Nishizawa
Hitoshi Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59153975A external-priority patent/JPH0766907B2/ja
Priority claimed from JP59153974A external-priority patent/JP2577542B2/ja
Priority claimed from JP59153976A external-priority patent/JPH0766908B2/ja
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Publication of FR2582149A1 publication Critical patent/FR2582149A1/fr
Application granted granted Critical
Publication of FR2582149B1 publication Critical patent/FR2582149B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR858511516A 1984-07-26 1985-07-26 Appareil pour la croissance d'un cristal semiconducteur Expired - Lifetime FR2582149B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP59153975A JPH0766907B2 (ja) 1984-07-26 1984-07-26 半導体結晶成長方法
JP59153974A JP2577542B2 (ja) 1984-07-26 1984-07-26 半導体結晶成長装置
JP59153976A JPH0766908B2 (ja) 1984-07-26 1984-07-26 半導体単結晶成長方法

Publications (2)

Publication Number Publication Date
FR2582149A1 FR2582149A1 (fr) 1986-11-21
FR2582149B1 true FR2582149B1 (fr) 1991-06-14

Family

ID=27320569

Family Applications (1)

Application Number Title Priority Date Filing Date
FR858511516A Expired - Lifetime FR2582149B1 (fr) 1984-07-26 1985-07-26 Appareil pour la croissance d'un cristal semiconducteur

Country Status (4)

Country Link
US (4) US4975252A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3526888A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2582149B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (3) GB2162207B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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GB8718943D0 (en) 1987-09-16
US5443033A (en) 1995-08-22
GB2200138B (en) 1989-05-10
GB2200138A (en) 1988-07-27
US20010001952A1 (en) 2001-05-31
GB2200137A (en) 1988-07-27
DE3526888A1 (de) 1986-02-06
US6464793B1 (en) 2002-10-15
GB2162207B (en) 1989-05-10
DE3526888C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-02-08
US4975252A (en) 1990-12-04
GB2200137B (en) 1989-05-10
GB2162207A (en) 1986-01-29
GB8718942D0 (en) 1987-09-16
GB8518842D0 (en) 1985-08-29
FR2582149A1 (fr) 1986-11-21

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