FR2568272B1 - Appareil pour former un cristal de semi-conducteur - Google Patents

Appareil pour former un cristal de semi-conducteur

Info

Publication number
FR2568272B1
FR2568272B1 FR858511515A FR8511515A FR2568272B1 FR 2568272 B1 FR2568272 B1 FR 2568272B1 FR 858511515 A FR858511515 A FR 858511515A FR 8511515 A FR8511515 A FR 8511515A FR 2568272 B1 FR2568272 B1 FR 2568272B1
Authority
FR
France
Prior art keywords
forming
semiconductor crystal
crystal
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR858511515A
Other languages
English (en)
Other versions
FR2568272A1 (fr
Inventor
Junichi Nishizawa
Hitoshi Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Publication of FR2568272A1 publication Critical patent/FR2568272A1/fr
Application granted granted Critical
Publication of FR2568272B1 publication Critical patent/FR2568272B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR858511515A 1984-07-26 1985-07-26 Appareil pour former un cristal de semi-conducteur Expired - Lifetime FR2568272B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59153973A JPH0766906B2 (ja) 1984-07-26 1984-07-26 ＧａＡｓエピタキシャル成長方法

Publications (2)

Publication Number Publication Date
FR2568272A1 FR2568272A1 (fr) 1986-01-31
FR2568272B1 true FR2568272B1 (fr) 1990-04-20

Family

ID=15574122

Family Applications (1)

Application Number Title Priority Date Filing Date
FR858511515A Expired - Lifetime FR2568272B1 (fr) 1984-07-26 1985-07-26 Appareil pour former un cristal de semi-conducteur

Country Status (5)

Country Link
US (1) US6334901B1 (fr)
JP (1) JPH0766906B2 (fr)
DE (1) DE3526889C2 (fr)
FR (1) FR2568272B1 (fr)
GB (1) GB2162369B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2577550B2 (ja) * 1986-11-20 1997-02-05 新技術事業団 ▲ｉｉｉ▼−▲ｖ▼族化合物半導体単結晶薄膜の不純物添加法
JPS61260622A (ja) * 1985-05-15 1986-11-18 Res Dev Corp Of Japan ＧａＡｓ単結晶薄膜の成長法
JPS62196821A (ja) * 1986-02-24 1987-08-31 Agency Of Ind Science & Technol 薄膜製造法
JP2652630B2 (ja) * 1986-04-02 1997-09-10 理化学研究所 結晶成長方法
FR2618455B1 (fr) * 1987-07-21 1994-03-18 Nissim Yves Procede de croissance epitaxiale de couches en materiau iii-v ou ii-vi par modulation rapide de la temperature
GB2234529B (en) * 1989-07-26 1993-06-02 Stc Plc Epitaxial growth process
GB2250751B (en) * 1990-08-24 1995-04-12 Kawasaki Heavy Ind Ltd Process for the production of dielectric thin films
US5705224A (en) * 1991-03-20 1998-01-06 Kokusai Electric Co., Ltd. Vapor depositing method
JP2680202B2 (ja) * 1991-03-20 1997-11-19 国際電気株式会社 気相成長方法及び装置
JP2987379B2 (ja) * 1991-11-30 1999-12-06 科学技術振興事業団 半導体結晶のエピタキシャル成長方法
JP4511006B2 (ja) * 2000-09-01 2010-07-28 独立行政法人理化学研究所 半導体の不純物ドーピング方法
US6730367B2 (en) * 2002-03-05 2004-05-04 Micron Technology, Inc. Atomic layer deposition method with point of use generated reactive gas species
US6841141B2 (en) * 2002-09-26 2005-01-11 Advanced Technology Materials, Inc. System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3502516A (en) * 1964-11-06 1970-03-24 Siemens Ag Method for producing pure semiconductor material for electronic purposes
DE1900116C3 (de) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US4081313A (en) * 1975-01-24 1978-03-28 Applied Materials, Inc. Process for preparing semiconductor wafers with substantially no crystallographic slip
FI57975C (fi) * 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
DD153899A5 (de) * 1980-02-26 1982-02-10 Lohja Ab Oy Verfahren und vorrichtung zur durchfuehrung des wachstums von zusammengesetzten duennen schichten
JPS5898917A (ja) * 1981-12-09 1983-06-13 Seiko Epson Corp 原子層エビタキシヤル装置
JPS58158914A (ja) * 1982-03-16 1983-09-21 Semiconductor Res Found 半導体製造装置
US4435445A (en) * 1982-05-13 1984-03-06 Energy Conversion Devices, Inc. Photo-assisted CVD
US4451503A (en) * 1982-06-30 1984-05-29 International Business Machines Corporation Photo deposition of metals with far UV radiation
US4454835A (en) * 1982-09-13 1984-06-19 The United States Of America As Represented By The Secretary Of The Navy Internal photolysis reactor
US4509451A (en) * 1983-03-29 1985-04-09 Colromm, Inc. Electron beam induced chemical vapor deposition
FR2544752B1 (fr) * 1983-04-25 1985-07-05 Commissariat Energie Atomique Procede de croissance amorphe d'un corps avec cristallisation sous rayonnement
JPS59207631A (ja) * 1983-05-11 1984-11-24 Semiconductor Res Found 光化学を用いたドライプロセス装置
JPH0766910B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 半導体単結晶成長装置
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
US5693139A (en) * 1984-07-26 1997-12-02 Research Development Corporation Of Japan Growth of doped semiconductor monolayers
US5294286A (en) * 1984-07-26 1994-03-15 Research Development Corporation Of Japan Process for forming a thin film of silicon
US4569855A (en) * 1985-04-11 1986-02-11 Canon Kabushiki Kaisha Method of forming deposition film
US5250148A (en) * 1985-05-15 1993-10-05 Research Development Corporation Process for growing GaAs monocrystal film
JPS6291494A (ja) * 1985-10-16 1987-04-25 Res Dev Corp Of Japan 化合物半導体単結晶成長方法及び装置
JPH0639357B2 (ja) * 1986-09-08 1994-05-25 新技術開発事業団 元素半導体単結晶薄膜の成長方法
JP2587623B2 (ja) * 1986-11-22 1997-03-05 新技術事業団 化合物半導体のエピタキシヤル結晶成長方法

Also Published As

Publication number Publication date
GB8518798D0 (en) 1985-08-29
GB2162369B (en) 1988-02-03
JPH0766906B2 (ja) 1995-07-19
JPS6134923A (ja) 1986-02-19
GB2162369A (en) 1986-01-29
DE3526889A1 (de) 1986-02-06
DE3526889C2 (de) 1995-03-23
US6334901B1 (en) 2002-01-01
FR2568272A1 (fr) 1986-01-31

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Legal Events

Date Code Title Description
TP Transmission of property