FR2408191A1 - Dispositif de memoire metal-oxyde-semi-conducteur a n canaux - Google Patents

Dispositif de memoire metal-oxyde-semi-conducteur a n canaux

Info

Publication number
FR2408191A1
FR2408191A1 FR7831052A FR7831052A FR2408191A1 FR 2408191 A1 FR2408191 A1 FR 2408191A1 FR 7831052 A FR7831052 A FR 7831052A FR 7831052 A FR7831052 A FR 7831052A FR 2408191 A1 FR2408191 A1 FR 2408191A1
Authority
FR
France
Prior art keywords
oxide
memory device
channel metal
semi
conductive memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7831052A
Other languages
English (en)
French (fr)
Other versions
FR2408191B1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2408191A1 publication Critical patent/FR2408191A1/fr
Application granted granted Critical
Publication of FR2408191B1 publication Critical patent/FR2408191B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
FR7831052A 1977-11-03 1978-11-02 Dispositif de memoire metal-oxyde-semi-conducteur a n canaux Granted FR2408191A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84800077A 1977-11-03 1977-11-03

Publications (2)

Publication Number Publication Date
FR2408191A1 true FR2408191A1 (fr) 1979-06-01
FR2408191B1 FR2408191B1 (de) 1982-11-19

Family

ID=25302070

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7831052A Granted FR2408191A1 (fr) 1977-11-03 1978-11-02 Dispositif de memoire metal-oxyde-semi-conducteur a n canaux

Country Status (17)

Country Link
JP (2) JPS5474684A (de)
BE (1) BE871678A (de)
CA (1) CA1129550A (de)
CH (1) CH636216A5 (de)
DE (1) DE2846872B2 (de)
FR (1) FR2408191A1 (de)
GB (1) GB2007430B (de)
HK (1) HK25484A (de)
IL (1) IL55812A (de)
IN (1) IN151278B (de)
IT (1) IT1100012B (de)
MY (1) MY8400042A (de)
NL (1) NL191768C (de)
PL (1) PL115612B1 (de)
SE (1) SE438217B (de)
SG (1) SG56282G (de)
TR (1) TR20234A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4216489A (en) * 1979-01-22 1980-08-05 Bell Telephone Laboratories, Incorporated MOS Dynamic memory in a diffusion current limited semiconductor structure

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0024905B1 (de) * 1979-08-25 1985-01-16 Zaidan Hojin Handotai Kenkyu Shinkokai Feldeffekttransistor mit isoliertem Gate
JPS5694732A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Semiconductor substrate
DE3177173D1 (de) * 1980-01-25 1990-05-23 Toshiba Kawasaki Kk Halbleiterspeichervorrichtung.
JPH0782753B2 (ja) * 1984-08-31 1995-09-06 三菱電機株式会社 ダイナミックメモリ装置
USD845135S1 (en) 2017-02-24 2019-04-09 S. C. Johnson & Son, Inc. Bottle neck with cap

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3918081A (en) * 1968-04-23 1975-11-04 Philips Corp Integrated semiconductor device employing charge storage and charge transport for memory or delay line
US3961355A (en) * 1972-06-30 1976-06-01 International Business Machines Corporation Semiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of forming
US4007478A (en) * 1971-08-26 1977-02-08 Sony Corporation Field effect transistor
DE2603746A1 (de) * 1976-01-31 1977-08-04 Licentia Gmbh Integrierte schaltungsanordnung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544327A1 (de) * 1951-01-28 1970-02-26 Telefunken Patent Verfahren zum Herstellen einer dotierten Zone in einem begrenzten Bereich eines Halbleiterkoerpers
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell
JPS4931509U (de) * 1972-06-17 1974-03-19
US4012757A (en) * 1975-05-05 1977-03-15 Intel Corporation Contactless random-access memory cell and cell pair
US3997368A (en) * 1975-06-24 1976-12-14 Bell Telephone Laboratories, Incorporated Elimination of stacking faults in silicon devices: a gettering process
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element
JPS5279786A (en) * 1975-12-26 1977-07-05 Fujitsu Ltd Semiconductor memory device
JPS5290279A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Mos memory device
DE2619713C2 (de) * 1976-05-04 1984-12-20 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3918081A (en) * 1968-04-23 1975-11-04 Philips Corp Integrated semiconductor device employing charge storage and charge transport for memory or delay line
US4007478A (en) * 1971-08-26 1977-02-08 Sony Corporation Field effect transistor
US3961355A (en) * 1972-06-30 1976-06-01 International Business Machines Corporation Semiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of forming
DE2603746A1 (de) * 1976-01-31 1977-08-04 Licentia Gmbh Integrierte schaltungsanordnung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4216489A (en) * 1979-01-22 1980-08-05 Bell Telephone Laboratories, Incorporated MOS Dynamic memory in a diffusion current limited semiconductor structure

Also Published As

Publication number Publication date
JPS59115667U (ja) 1984-08-04
IN151278B (de) 1983-03-19
CH636216A5 (de) 1983-05-13
GB2007430A (en) 1979-05-16
DE2846872A1 (de) 1979-05-10
SE438217B (sv) 1985-04-01
BE871678A (fr) 1979-02-15
HK25484A (en) 1984-03-30
JPS5474684A (en) 1979-06-14
NL191768B (nl) 1996-03-01
NL191768C (nl) 1996-07-02
TR20234A (tr) 1980-11-01
MY8400042A (en) 1984-12-31
PL210682A1 (pl) 1979-07-16
IT7829360A0 (it) 1978-11-02
SE7811094L (sv) 1979-05-04
DE2846872B2 (de) 1981-04-30
FR2408191B1 (de) 1982-11-19
DE2846872C3 (de) 1989-06-08
GB2007430B (en) 1982-03-03
IT1100012B (it) 1985-09-28
CA1129550A (en) 1982-08-10
IL55812A (en) 1981-10-30
PL115612B1 (en) 1981-04-30
NL7810929A (nl) 1979-05-07
SG56282G (en) 1983-09-02
JPH019174Y2 (de) 1989-03-13
IL55812A0 (en) 1978-12-17

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