HK25484A - Semiconductor device and fabrication method - Google Patents

Semiconductor device and fabrication method

Info

Publication number
HK25484A
HK25484A HK254/84A HK25484A HK25484A HK 25484 A HK25484 A HK 25484A HK 254/84 A HK254/84 A HK 254/84A HK 25484 A HK25484 A HK 25484A HK 25484 A HK25484 A HK 25484A
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
fabrication method
fabrication
semiconductor
Prior art date
Application number
HK254/84A
Inventor
James Theodore Clemens
Dinesh Ashvinikumar Mehta
James Thomas Nelson
Charles Walter Pearce
Robert Ching-I Sun
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of HK25484A publication Critical patent/HK25484A/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
HK254/84A 1977-11-03 1984-03-22 Semiconductor device and fabrication method HK25484A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84800077A 1977-11-03 1977-11-03

Publications (1)

Publication Number Publication Date
HK25484A true HK25484A (en) 1984-03-30

Family

ID=25302070

Family Applications (1)

Application Number Title Priority Date Filing Date
HK254/84A HK25484A (en) 1977-11-03 1984-03-22 Semiconductor device and fabrication method

Country Status (17)

Country Link
JP (2) JPS5474684A (en)
BE (1) BE871678A (en)
CA (1) CA1129550A (en)
CH (1) CH636216A5 (en)
DE (1) DE2846872B2 (en)
FR (1) FR2408191A1 (en)
GB (1) GB2007430B (en)
HK (1) HK25484A (en)
IL (1) IL55812A (en)
IN (1) IN151278B (en)
IT (1) IT1100012B (en)
MY (1) MY8400042A (en)
NL (1) NL191768C (en)
PL (1) PL115612B1 (en)
SE (1) SE438217B (en)
SG (1) SG56282G (en)
TR (1) TR20234A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4216489A (en) * 1979-01-22 1980-08-05 Bell Telephone Laboratories, Incorporated MOS Dynamic memory in a diffusion current limited semiconductor structure
EP0024905B1 (en) * 1979-08-25 1985-01-16 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated-gate field-effect transistor
JPS5694732A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Semiconductor substrate
EP0033130B1 (en) * 1980-01-25 1986-01-08 Kabushiki Kaisha Toshiba Semiconductor memory device
JPH0782753B2 (en) * 1984-08-31 1995-09-06 三菱電機株式会社 Dynamic memory device
USD845135S1 (en) 2017-02-24 2019-04-09 S. C. Johnson & Son, Inc. Bottle neck with cap

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544327A1 (en) * 1951-01-28 1970-02-26 Telefunken Patent Method for producing a doped zone in a limited area of a semiconductor body
US3918081A (en) * 1968-04-23 1975-11-04 Philips Corp Integrated semiconductor device employing charge storage and charge transport for memory or delay line
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell
JPS5123432B2 (en) * 1971-08-26 1976-07-16
JPS4931509U (en) * 1972-06-17 1974-03-19
US3961355A (en) * 1972-06-30 1976-06-01 International Business Machines Corporation Semiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of forming
US4012757A (en) * 1975-05-05 1977-03-15 Intel Corporation Contactless random-access memory cell and cell pair
US3997368A (en) * 1975-06-24 1976-12-14 Bell Telephone Laboratories, Incorporated Elimination of stacking faults in silicon devices: a gettering process
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element
JPS5279786A (en) * 1975-12-26 1977-07-05 Fujitsu Ltd Semiconductor memory device
JPS5290279A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Mos memory device
DE2603746A1 (en) * 1976-01-31 1977-08-04 Licentia Gmbh Integrated circuit with three zones of opposite conductivity - has circuit components deposited in third zone
DE2619713C2 (en) * 1976-05-04 1984-12-20 Siemens AG, 1000 Berlin und 8000 München Semiconductor memory

Also Published As

Publication number Publication date
PL210682A1 (en) 1979-07-16
SE7811094L (en) 1979-05-04
JPH019174Y2 (en) 1989-03-13
IL55812A (en) 1981-10-30
GB2007430B (en) 1982-03-03
IN151278B (en) 1983-03-19
SE438217B (en) 1985-04-01
MY8400042A (en) 1984-12-31
TR20234A (en) 1980-11-01
FR2408191A1 (en) 1979-06-01
GB2007430A (en) 1979-05-16
IT7829360A0 (en) 1978-11-02
CH636216A5 (en) 1983-05-13
JPS5474684A (en) 1979-06-14
DE2846872B2 (en) 1981-04-30
DE2846872C3 (en) 1989-06-08
BE871678A (en) 1979-02-15
IL55812A0 (en) 1978-12-17
NL7810929A (en) 1979-05-07
SG56282G (en) 1983-09-02
IT1100012B (en) 1985-09-28
FR2408191B1 (en) 1982-11-19
PL115612B1 (en) 1981-04-30
NL191768C (en) 1996-07-02
CA1129550A (en) 1982-08-10
DE2846872A1 (en) 1979-05-10
JPS59115667U (en) 1984-08-04
NL191768B (en) 1996-03-01

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Legal Events

Date Code Title Description
PE Patent expired