GB2007430B - Semicinductor device and fabrication method - Google Patents

Semicinductor device and fabrication method

Info

Publication number
GB2007430B
GB2007430B GB7840104A GB7840104A GB2007430B GB 2007430 B GB2007430 B GB 2007430B GB 7840104 A GB7840104 A GB 7840104A GB 7840104 A GB7840104 A GB 7840104A GB 2007430 B GB2007430 B GB 2007430B
Authority
GB
United Kingdom
Prior art keywords
semicinductor
device
fabrication method
fabrication
method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7840104A
Other versions
GB2007430A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Western Electric Co Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US84800077A priority Critical
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB2007430A publication Critical patent/GB2007430A/en
Application granted granted Critical
Publication of GB2007430B publication Critical patent/GB2007430B/en
Application status is Expired legal-status Critical

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/108Dynamic random access memory structures
    • H01L27/10805Dynamic random access memory structures with one-transistor one-capacitor memory cells
GB7840104A 1977-11-03 1978-10-11 Semicinductor device and fabrication method Expired GB2007430B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US84800077A true 1977-11-03 1977-11-03

Publications (2)

Publication Number Publication Date
GB2007430A GB2007430A (en) 1979-05-16
GB2007430B true GB2007430B (en) 1982-03-03

Family

ID=25302070

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7840104A Expired GB2007430B (en) 1977-11-03 1978-10-11 Semicinductor device and fabrication method

Country Status (17)

Country Link
JP (2) JPS5474684A (en)
BE (1) BE871678A (en)
CA (1) CA1129550A (en)
CH (1) CH636216A5 (en)
DE (1) DE2846872C3 (en)
FR (1) FR2408191B1 (en)
GB (1) GB2007430B (en)
HK (1) HK25484A (en)
IL (1) IL55812A (en)
IN (1) IN151278B (en)
IT (1) IT1100012B (en)
MY (1) MY8400042A (en)
NL (1) NL191768C (en)
PL (1) PL115612B1 (en)
SE (1) SE438217B (en)
SG (1) SG56282G (en)
TR (1) TR20234A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD845135S1 (en) 2017-02-24 2019-04-09 S. C. Johnson & Son, Inc. Bottle neck with cap

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4216489A (en) * 1979-01-22 1980-08-05 Bell Telephone Laboratories, Incorporated MOS Dynamic memory in a diffusion current limited semiconductor structure
EP0024905B1 (en) * 1979-08-25 1985-01-16 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated-gate field-effect transistor
JPH0117265B2 (en) * 1979-12-28 1989-03-29 Fujitsu Ltd
DE3173413D1 (en) * 1980-01-25 1986-02-20 Toshiba Kk Semiconductor memory device
JPH0782753B2 (en) * 1984-08-31 1995-09-06 三菱電機株式会社 Dynamic memory device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544327C3 (en) * 1951-01-28 1974-11-21 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm
US3918081A (en) * 1968-04-23 1975-11-04 Philips Corp Integrated semiconductor device employing charge storage and charge transport for memory or delay line
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell
JPS5123432B2 (en) * 1971-08-26 1976-07-16
JPS4931509U (en) * 1972-06-17 1974-03-19
US3961355A (en) * 1972-06-30 1976-06-01 International Business Machines Corporation Semiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of forming
US4012757A (en) * 1975-05-05 1977-03-15 Intel Corporation Contactless random-access memory cell and cell pair
US3997368A (en) * 1975-06-24 1976-12-14 Bell Telephone Laboratories, Incorporated Elimination of stacking faults in silicon devices: a gettering process
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element
JPS5549789B2 (en) * 1975-12-26 1980-12-13
JPS5290279A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Mos memory device
DE2603746A1 (en) * 1976-01-31 1977-08-04 Licentia Gmbh Integrated circuit with three zones of opposite conductivity - has circuit components deposited in third zone
DE2619713C2 (en) * 1976-05-04 1984-12-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD845135S1 (en) 2017-02-24 2019-04-09 S. C. Johnson & Son, Inc. Bottle neck with cap

Also Published As

Publication number Publication date
PL210682A1 (en) 1979-07-16
DE2846872B2 (en) 1981-04-30
DE2846872C3 (en) 1989-06-08
CH636216A5 (en) 1983-05-13
IL55812A (en) 1981-10-30
TR20234A (en) 1980-11-01
BE871678A (en) 1979-02-15
SE438217B (en) 1985-04-01
NL7810929A (en) 1979-05-07
SG56282G (en) 1983-09-02
SE7811094A (en) 1979-05-04
NL191768B (en) 1996-03-01
JPS5474684A (en) 1979-06-14
CA1129550A1 (en)
FR2408191A1 (en) 1979-06-01
HK25484A (en) 1984-03-30
BE871678A1 (en)
IT1100012B (en) 1985-09-28
IT7829360D0 (en) 1978-11-02
GB2007430A (en) 1979-05-16
NL191768C (en) 1996-07-02
PL115612B1 (en) 1981-04-30
JPS59115667U (en) 1984-08-04
JPH019174Y2 (en) 1989-03-13
IN151278B (en) 1983-03-19
DE2846872A1 (en) 1979-05-10
FR2408191B1 (en) 1982-11-19
IL55812D0 (en) 1978-12-17
MY8400042A (en) 1984-12-31
CA1129550A (en) 1982-08-10

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 19981010